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1. 发明授权

US07936023B1 High voltage diode 有权
标题翻译：高压二极管
公开(公告)号：US07936023B1
公开(公告)日：2011-05-03
申请号：US11861013
申请日：2007-09-25
申请人： Jaejune Jang , Bill Phan , Helmut Puchner
发明人： Jaejune Jang , Bill Phan , Helmut Puchner
IPC分类号： H01L23/62
CPC分类号： H01L29/8611 , H01L29/0634 , H01L29/0653
摘要： A diode, includes a semiconductor substrate, a first region doped with a first dopant type in the substrate, a second region doped with a second dopant type in the substrate, a first well of the first dopant type in the substrate and surrounding the first region and the second region, and a second well of the second dopant type in the substrate connecting the first region and the second region. The first dopant type is opposite the second dopant type.
摘要翻译：二极管包括半导体衬底，在衬底中掺杂有第一掺杂剂类型的第一区域，在衬底中掺杂第二掺杂剂类型的第二区域，衬底中的第一掺杂剂类型的第一阱并围绕第一区域和第二区域，以及在连接第一区域和第二区域的基板中的第二掺杂剂类型的第二阱。第一掺杂剂类型与第二掺杂剂类型相反。

2. 发明授权

US07768068B1 Drain extended MOS transistor with increased breakdown voltage 有权
标题翻译：漏极扩散MOS晶体管具有增加的击穿电压
公开(公告)号：US07768068B1
公开(公告)日：2010-08-03
申请号：US11758451
申请日：2007-06-05
申请人： Kevin Jang , Bill Phan , Helmut Puchner
发明人： Kevin Jang , Bill Phan , Helmut Puchner
IPC分类号： H01L29/735
CPC分类号： H01L29/0847 , H01L29/0653 , H01L29/0692 , H01L29/66659 , H01L29/7835
摘要： A semiconductor topography and a method for forming a drain extended metal oxide semiconductor (DEMOS) transistor is provided. The semiconductor topography includes at least a portion of an extended drain contact region formed within a well region and a plurality of dielectrically spaced extension regions interposed between the well region and a channel region underlying a gate structure of the topography. The channel region of a first conductivity type and the well region of a second conductivity type opposite of the first conductivity type. In addition, the plurality of dielectrically spaced extension regions and the extended drain contact region are of the second conductivity type. Each of the plurality of dielectrically spaced extension regions has a lower net concentration of electrically active impurities than the well region. Moreover, the extended drain contact region has a greater net concentration of electrically active impurities than the well region.
摘要翻译：提供半导体形貌和形成漏极延伸金属氧化物半导体（DEMOS）晶体管的方法。半导体形貌包括形成在阱区内的扩展漏极接触区域的至少一部分和介于阱区域和位于形貌的栅极结构之下的沟道区域之间的多个介电间隔的延伸区域。第一导电类型的沟道区和与第一导电类型相反的第二导电类型的阱区。此外，多个介电间隔的延伸区域和延伸的漏极接触区域是第二导电类型。多个介电间隔延伸区域中的每一个具有比阱区域更低的电活性杂质的净浓度。此外，延伸的漏极接触区域具有比阱区域更大的电活性杂质的净浓度。

3. 发明申请

US20110094574A1 Polarization Resistant Solar Cell Design Using SiCN 审中-公开
标题翻译：使用SiCN的耐极化太阳能电池设计
公开(公告)号：US20110094574A1
公开(公告)日：2011-04-28
申请号：US12647201
申请日：2009-12-24
申请人： Renhua Zhang , Bill Phan , John Gorman , Alain Paul Blosse , Martin Kaes
发明人： Renhua Zhang , Bill Phan , John Gorman , Alain Paul Blosse , Martin Kaes
IPC分类号： H01L31/00
CPC分类号： H01L31/02167 , H01L31/02168 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： A polarization resistant solar cell is provided. The solar cell uses a dual layer dielectric stack disposed on the front surface of the cell. The dielectric stack consists of a passivation layer disposed directly on the front cell surface and comprised of either SiOx or SiON, and an outer AR coating comprised of SiCN.
摘要翻译：提供了一种耐极化的太阳能电池。太阳能电池使用设置在电池前表面上的双层电介质堆叠。电介质堆叠由直接设置在前电池表面上并由SiO x或SiON构成的钝化层和由SiCN组成的外部AR涂层组成。

4. 发明授权

US09166071B2 Polarization resistant solar cell design using an oxygen-rich interface layer 有权
标题翻译：使用富氧界面层的耐极化太阳能电池设计
公开(公告)号：US09166071B2
公开(公告)日：2015-10-20
申请号：US12647286
申请日：2009-12-24
申请人： Bill Phan , Renhua Zhang , John Gorman , Omar Sidelkheir , Jean Patrice Rakotoniaina , Alain Paul Blosse , Martin Kaes
发明人： Bill Phan , Renhua Zhang , John Gorman , Omar Sidelkheir , Jean Patrice Rakotoniaina , Alain Paul Blosse , Martin Kaes
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/02167 , H01L31/02168 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： A polarization resistant solar cell using an oxygen-rich interface layer is provided. The oxygen-rich interface layer may be comprised of SiOxNy, which may have a graded profile that varies between oxygen-rich proximate to the solar cell to nitrogen-rich distal to the solar cell. A silicon oxide passivation layer may be interposed between the solar cell and the SiOxNy graded dielectric layer. The graded SiOxNy dielectric layer may be replaced with a non-graded SiOxNy dielectric layer and a SiN AR coating.
摘要翻译：提供了使用富氧界面层的耐极化太阳能电池。富氧界面层可以由SiO x N y组成，其可以具有在太阳能电池附近的富含氧和太阳能电池远端富氮之间变化的分级分布。氧化硅钝化层可以介于太阳能电池和SiO x N y梯度电介质层之间。分级的SiO x N y介电层可以用非梯度的SiO x N y电介质层和SiN-AR涂层代替。

5. 发明申请

US20110094575A1 Polarization Resistant Solar Cell Design Using an Oxygen-Rich Interface Layer 有权
标题翻译：使用富氧界面层的耐极化太阳能电池设计
公开(公告)号：US20110094575A1
公开(公告)日：2011-04-28
申请号：US12647286
申请日：2009-12-24
申请人： Bill Phan , Renhua Zhang , John Gorman , Omar Sidelkheir , Jean Patrice Rakotoniaina , Alain Paul Blosse , Martin Kaes
发明人： Bill Phan , Renhua Zhang , John Gorman , Omar Sidelkheir , Jean Patrice Rakotoniaina , Alain Paul Blosse , Martin Kaes
IPC分类号： H01L31/00
CPC分类号： H01L31/02167 , H01L31/02168 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： A polarization resistant solar cell using an oxygen-rich interface layer is provided. The oxygen-rich interface layer may be comprised of SiOxNy, which may have a graded profile that varies between oxygen-rich proximate to the solar cell to nitrogen-rich distal to the solar cell. A silicon oxide passivation layer may be interposed between the solar cell and the SiOxNy graded dielectric layer. The graded SiOxNy dielectric layer may be replaced with a non-graded SiOxNy dielectric layer and a SiN AR coating.
摘要翻译：提供了使用富氧界面层的耐极化太阳能电池。富氧界面层可以由SiO x N y组成，其可以具有在太阳能电池附近的富含氧和太阳能电池远端富氮之间变化的分级分布。氧化硅钝化层可以介于太阳能电池和SiO x N y梯度电介质层之间。分级的SiO x N y介电层可以用非梯度的SiO x N y电介质层和SiN-AR涂层代替。

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