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1. 发明申请

US20150294980A1 Semiconductor Memory Devices Including Fine Patterns and Methods of Fabricatring the Same 有权
标题翻译：包括精细图案的半导体存储器件及其制造方法
公开(公告)号：US20150294980A1
公开(公告)日：2015-10-15
申请号：US14681505
申请日：2015-04-08
申请人： Jaegoo Lee , Youngwoo Park , Jaeduk Lee
发明人： Jaegoo Lee , Youngwoo Park , Jaeduk Lee
IPC分类号： H01L27/115 , H01L29/66 , H01L21/285 , H01L21/28 , H01L21/768 , H01L29/792 , H01L29/423
CPC分类号： H01L27/11582 , H01L21/28282 , H01L21/28518 , H01L21/76877 , H01L29/66833 , H01L29/7926
摘要： Semiconductor devices are provided including an active pillar protruding from a substrate; a first gate electrode and a second gate electrode adjacent to a sidewall of the active pillar and vertically overlapping with each other, the first and second gate electrodes being insulated from each other; a first intergate insulating layer covering a first surface of the first gate electrode; and a second intergate insulating layer covering a second surface, opposite the first surface, of the second gate electrode and spaced apart from the first intergate insulating layer. The first intergate insulating layer and the second intergate insulating layer define an air gap therebetween.
摘要翻译：提供半导体器件，其包括从基板突出的有源柱; 与所述有源柱的侧壁相邻并且彼此垂直重叠的第一栅电极和第二栅电极，所述第一栅电极和所述第二栅电极彼此绝缘; 覆盖所述第一栅电极的第一表面的第一隔间绝缘层; 以及覆盖所述第二栅电极的与所述第一表面相对的第二表面并与所述第一栅极绝缘层间隔开的第二栅极绝缘层。第一隔间绝缘层和第二隔间绝缘层在其间形成气隙。

2. 发明授权

US09362303B2 Semiconductor memory devices including fine patterns and methods of fabricating the same 有权
标题翻译：包括精细图案的半导体存储器件及其制造方法
公开(公告)号：US09362303B2
公开(公告)日：2016-06-07
申请号：US14681505
申请日：2015-04-08
申请人： Jaegoo Lee , Youngwoo Park , Jaeduk Lee
发明人： Jaegoo Lee , Youngwoo Park , Jaeduk Lee
IPC分类号： H01L29/792 , H01L27/115 , H01L29/66 , H01L21/28 , H01L21/768 , H01L21/285
CPC分类号： H01L27/11582 , H01L21/28282 , H01L21/28518 , H01L21/76877 , H01L29/66833 , H01L29/7926
摘要： Semiconductor devices are provided including an active pillar protruding from a substrate; a first gate electrode and a second gate electrode adjacent to a sidewall of the active pillar and vertically overlapping with each other, the first and second gate electrodes being insulated from each other; a first intergate insulating layer covering a first surface of the first gate electrode; and a second intergate insulating layer covering a second surface, opposite the first surface, of the second gate electrode and spaced apart from the first intergate insulating layer. The first intergate insulating layer and the second intergate insulating layer define an air gap therebetween.
摘要翻译：提供半导体器件，其包括从基板突出的有源柱; 与所述有源柱的侧壁相邻并且彼此垂直重叠的第一栅电极和第二栅电极，所述第一栅电极和所述第二栅电极彼此绝缘; 覆盖所述第一栅电极的第一表面的第一隔间绝缘层; 以及覆盖所述第二栅电极的与所述第一表面相对的第二表面并与所述第一栅极绝缘层间隔开的第二栅极绝缘层。第一隔间绝缘层和第二隔间绝缘层在其间形成气隙。

3. 发明申请

US20160005760A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20160005760A1
公开(公告)日：2016-01-07
申请号：US14725476
申请日：2015-05-29
申请人： Dohyun Lee , Jaegoo Lee , Young-Jin Kwon , Youngwoo Park , Jaeduk Lee
发明人： Dohyun Lee , Jaegoo Lee , Young-Jin Kwon , Youngwoo Park , Jaeduk Lee
IPC分类号： H01L27/115 , H01L29/10 , H01L29/792
CPC分类号： H01L27/11582 , H01L27/1157 , H01L29/1033 , H01L29/7926
摘要： A semiconductor device includes a lower stack structure including lower gate electrodes and lower insulating layers that are alternately and repeatedly stacked on a substrate. The semiconductor device includes an upper stack structure including upper gate electrodes and upper insulating layers that are alternately and repeatedly stacked on the lower stack structure. A lower channel structure penetrates the lower stack structure. An upper channel structure penetrates and is connected to the upper stack structure. A lower vertical insulator is disposed between the lower stack structure and the lower channel structure. The lower channel structure includes a first vertical semiconductor pattern connected to the substrate, and a first connecting semiconductor pattern disposed on the first vertical semiconductor pattern. The upper channel structure includes a second vertical semiconductor pattern electrically connected to the first vertical semiconductor pattern with the first connecting semiconductor pattern disposed therebetween.
摘要翻译：半导体器件包括下层堆叠结构，其包括交替重复堆叠在衬底上的下栅电极和下绝缘层。半导体器件包括上堆叠结构，其包括交替重复堆叠在下堆叠结构上的上栅电极和上绝缘层。下部通道结构穿透下部堆叠结构。上通道结构穿透并连接到上堆叠结构。下部垂直绝缘体设置在下部堆叠结构和下部通道结构之间。下通道结构包括连接到基板的第一垂直半导体图案和布置在第一垂直半导体图案上的第一连接半导体图案。上通道结构包括电连接到第一垂直半导体图案的第二垂直半导体图案，其间设置有第一连接半导体图案。

4. 发明申请

US20120119283A1 METHODS FOR FORMING ETCH STOP LAYERS, SEMICONDUCTOR DEVICES HAVING THE SAME, AND METHODS FOR FABRICATING SEMICONDUCTOR DEVICES 有权
标题翻译：形成止蚀层的方法，具有该阻挡层的半导体器件以及用于制造半导体器件的方法
公开(公告)号：US20120119283A1
公开(公告)日：2012-05-17
申请号：US13238319
申请日：2011-09-21
申请人： Jaegoo Lee , Youngwoo Park
发明人： Jaegoo Lee , Youngwoo Park
IPC分类号： H01L29/78 , H01L29/792 , H01L29/788
CPC分类号： H01L21/76832 , H01L27/11519 , H01L27/11548 , H01L27/11551 , H01L27/11556 , H01L27/11565 , H01L27/11575 , H01L27/11578 , H01L27/11582
摘要： A plurality of vertical channels of semiconductor material are formed to extend in a vertical direction through the plurality of insulation layers and the plurality of conductive patterns, a gate insulating layer between the conductive pattern and the vertical channels that insulates the conductive pattern from the vertical channels. Conductive contact regions of the at least two of the conductive patterns are in a stepped configuration. An etch stop layer is positioned on the conductive contact regions, wherein the etch stop layer has a first portion on a first one of the plurality of conductive patterns and has a second portion on a second one of the plurality of conductive patterns, wherein the first portion is of a thickness that is greater than a thickness of the second portion.
摘要翻译：多个垂直通道的半导体材料形成为沿着垂直方向延伸穿过多个绝缘层和多个导电图案，导电图案和垂直沟道之间的栅极绝缘层将导电图案与垂直沟道绝缘。至少两个导电图案的导电接触区域处于阶梯状结构。蚀刻停止层位于导电接触区域上，其中蚀刻停止层在多个导电图案中的第一个上具有第一部分，并且在多个导电图案中的第二个导电图案上具有第二部分，其中第一部分部分的厚度大于第二部分的厚度。

5. 发明授权

US08822322B2 Semiconductor devices and methods of fabricating the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08822322B2
公开(公告)日：2014-09-02
申请号：US13214462
申请日：2011-08-22
申请人： Jaegoo Lee , Youngwoo Park , Jungdal Choi
发明人： Jaegoo Lee , Youngwoo Park , Jungdal Choi
IPC分类号： H01L21/8239
CPC分类号： H01L27/11578 , H01L27/11582 , H01L29/4234 , H01L29/7827 , H01L29/7926
摘要： A method of fabricating a semiconductor memory device includes forming a mold stack on a substrate and the mold stack including first sacrificial layers and second sacrificial layers alternately stacked on the substrate. The method also includes forming a plurality of vertical channels that penetrate the mold stack and that contact the substrate, patterning the mold stack to form word line cuts between the vertical channels, the word line cuts exposing the substrate, removing one of the first and second sacrificial layers to form recessed regions in the mold stack, forming a data storage layer, at least a portion of the data storage layer being formed between the vertical channels and the gates, forming gates in the recessed regions, forming air gaps between the gates by removing the other of the first and second sacrificial layers, and forming an insulation layer pattern in the word line cuts.
摘要翻译：一种制造半导体存储器件的方法包括在衬底上形成模具堆叠，并且模具叠层包括交替层叠在衬底上的第一牺牲层和第二牺牲层。该方法还包括形成多个垂直通道，其穿过模具叠层并与衬底接触，图案化模具叠层以形成垂直通道之间的字线切口，字线切割暴露衬底，去除第一和第二牺牲层，以在模具堆叠中形成凹陷区域，形成数据存储层，数据存储层的至少一部分形成在垂直沟道和栅极之间，在凹陷区域中形成栅极，在栅极之间形成气隙，通过去除第一和第二牺牲层中的另一个，并且在字线切割中形成绝缘层图案。

6. 发明授权

US09362226B2 Three-dimensional (3D) semiconductor devices and methods of fabricating 3D semiconductor devices 有权
标题翻译：三维（3D）半导体器件和制造3D半导体器件的方法
公开(公告)号：US09362226B2
公开(公告)日：2016-06-07
申请号：US14637755
申请日：2015-03-04
申请人： Jaegoo Lee , Youngwoo Park
发明人： Jaegoo Lee , Youngwoo Park
IPC分类号： H01L29/06 , H01L29/40 , H01L23/02 , H01L23/528 , H01L23/522 , H01L27/115
CPC分类号： H01L27/11582 , H01L23/5226 , H01L23/528 , H01L27/11548 , H01L27/11556 , H01L27/11575 , H01L2924/0002 , H01L2924/00
摘要： A three-dimensional (3D) semiconductor device includes a stack of conductive layers spaced from each other in a vertical direction, the stack having a staircase-shaped section in a connection region, and ends of the conductive layers constituting treads of the staircase-shaped section, respectively. The 3D semiconductor device further includes buffer patterns disposed on and protruding above the respective ends of the conductive layers, an interconnection structure disposed above the stack and including conductive lines, and contact plugs extending vertically between the conductive lines and the buffer patterns and electrically connected to the conductive layers of the stack via the buffer patterns.
摘要翻译：三维（3D）半导体器件包括在垂直方向上彼此间隔开的导电层的堆叠，所述堆叠在连接区域中具有阶梯状部分，并且导电层的端部构成阶梯状的胎面部分。所述3D半导体器件还包括设置在所述导电层的各个端部之上并突出于所述导电层的各个端部上方的缓冲图案，布置在所述堆叠之上并且包括导电线的互连结构以及在所述导电线与所述缓冲图案之间垂直延伸的电连接经由缓冲器图案的堆叠的导电层。

7. 发明授权

US08742488B2 Three-dimensional semiconductor memory devices and methods of fabricating the same 有权
标题翻译：三维半导体存储器件及其制造方法
公开(公告)号：US08742488B2
公开(公告)日：2014-06-03
申请号：US13366818
申请日：2012-02-06
申请人： Jaegoo Lee , Kil-Su Jeong , Hansoo Kim , Youngwoo Park
发明人： Jaegoo Lee , Kil-Su Jeong , Hansoo Kim , Youngwoo Park
IPC分类号： H01L23/52
CPC分类号： H01L23/52 , H01L27/1157 , H01L27/11578 , H01L27/11582 , H01L2924/0002 , H01L2924/00
摘要： Example embodiments relate to a three-dimensional semiconductor memory device including an electrode structure on a substrate, the electrode structure including at least one conductive pattern on a lower electrode, and a semiconductor pattern extending through the electrode structure to the substrate. A vertical insulating layer may be between the semiconductor pattern and the electrode structure, and a lower insulating layer may be between the lower electrode and the substrate. The lower insulating layer may be between a bottom surface of the vertical insulating layer and a top surface of the substrate. Example embodiments related to methods for fabricating the foregoing three-dimensional semiconductor memory device.
摘要翻译：示例实施例涉及一种三维半导体存储器件，其包括在衬底上的电极结构，该电极结构包括在下电极上的至少一个导电图案，以及半导体图案，其延伸穿过该电极结构到该衬底。垂直绝缘层可以在半导体图案和电极结构之间，下绝缘层可以位于下电极和衬底之间。下绝缘层可以在垂直绝缘层的底表面和基板的顶表面之间。与制造上述三维半导体存储器件的方法相关的示例实施例。

8. 发明申请

US20110312174A1 Methods Of Manufacturing Three-Dimensional Semiconductor Devices 有权
标题翻译：制造三维半导体器件的方法
公开(公告)号：US20110312174A1
公开(公告)日：2011-12-22
申请号：US13165256
申请日：2011-06-21
申请人： Jaegoo Lee , Byungkwan You , Youngwoo Park , Kwang Soo Seol
发明人： Jaegoo Lee , Byungkwan You , Youngwoo Park , Kwang Soo Seol
IPC分类号： H01L21/3205 , H01L21/31
CPC分类号： H01L21/3205 , H01L27/11578 , H01L27/11582
摘要： Methods of manufacturing three-dimensional semiconductor devices that may include forming a first spacer on a sidewall inside a first opening formed in a first stack structure, forming a sacrificial filling pattern on the spacer to fill the first opening, forming a second stack structure including a second opening exposing the sacrificial filling pattern on the first stack structure, forming a second spacer on a sidewall inside the second opening, removing the sacrificial filling pattern and removing the first spacer and the second spacer.
摘要翻译：制造三维半导体器件的方法，其可以包括在形成在第一堆叠结构中的第一开口内的侧壁上形成第一间隔物，在间隔物上形成牺牲填充图案以填充第一开口，形成第二堆叠结构，在所述第一堆叠结构上暴露所述牺牲填充图案的第二开口，在所述第二开口内的侧壁上形成第二间隔件，去除所述牺牲填充图案并移除所述第一间隔件和所述第二间隔件。

9. 发明申请

US20140197470A1 METHODS FOR FORMING ETCH STOP LAYERS, SEMICONDUCTOR DEVICES HAVING THE SAME, AND METHODS FOR FABRICATING SEMICONDUCTOR DEVICES 有权
标题翻译：形成止蚀层的方法，具有该阻挡层的半导体器件以及用于制造半导体器件的方法
公开(公告)号：US20140197470A1
公开(公告)日：2014-07-17
申请号：US14218091
申请日：2014-03-18
申请人： Jaegoo Lee , Youngwoo Park
发明人： Jaegoo Lee , Youngwoo Park
IPC分类号： H01L21/768 , H01L27/115
CPC分类号： H01L21/76832 , H01L27/11519 , H01L27/11548 , H01L27/11551 , H01L27/11556 , H01L27/11565 , H01L27/11575 , H01L27/11578 , H01L27/11582
摘要： A plurality of vertical channels of semiconductor material are formed to extend in a vertical direction through the plurality of insulation layers and the plurality of conductive patterns, a gate insulating layer between the conductive pattern and the vertical channels that insulates the conductive pattern from the vertical channels. Conductive contact regions of the at least two of the conductive patterns are in a stepped configuration. An etch stop layer is positioned on the conductive contact regions, wherein the etch stop layer has a first portion on a first one of the plurality of conductive patterns and has a second portion on a second one of the plurality of conductive patterns, wherein the first portion is of a thickness that is greater than a thickness of the second portion.
摘要翻译：多个垂直通道的半导体材料形成为沿着垂直方向延伸穿过多个绝缘层和多个导电图案，导电图案和垂直沟道之间的栅极绝缘层将导电图案与垂直沟道绝缘。至少两个导电图案的导电接触区域处于阶梯状结构。蚀刻停止层位于导电接触区域上，其中蚀刻停止层在多个导电图案中的第一个上具有第一部分，并且在多个导电图案中的第二个导电图案上具有第二部分，其中第一部分部分的厚度大于第二部分的厚度。

10. 发明授权

US08741761B2 Methods of manufacturing three-dimensional semiconductor devices 有权
标题翻译：制造三维半导体器件的方法
公开(公告)号：US08741761B2
公开(公告)日：2014-06-03
申请号：US13165256
申请日：2011-06-21
申请人： Jaegoo Lee , Byungkwan You , Youngwoo Park , Kwang Soo Seol
发明人： Jaegoo Lee , Byungkwan You , Youngwoo Park , Kwang Soo Seol
IPC分类号： H01L23/3205 , H01L21/31
CPC分类号： H01L21/3205 , H01L27/11578 , H01L27/11582
摘要： Methods of manufacturing three-dimensional semiconductor devices that may include forming a first spacer on a sidewall inside a first opening formed in a first stack structure, forming a sacrificial filling pattern on the spacer to fill the first opening, forming a second stack structure including a second opening exposing the sacrificial filling pattern on the first stack structure, forming a second spacer on a sidewall inside the second opening, removing the sacrificial filling pattern and removing the first spacer and the second spacer.
摘要翻译：制造三维半导体器件的方法，其可以包括在形成在第一堆叠结构中的第一开口内的侧壁上形成第一间隔物，在间隔物上形成牺牲填充图案以填充第一开口，形成第二堆叠结构，在所述第一堆叠结构上暴露所述牺牲填充图案的第二开口，在所述第二开口内的侧壁上形成第二间隔件，去除所述牺牲填充图案并移除所述第一间隔件和所述第二间隔件。

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