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1. 发明申请

US20050170620A1 Transistors for semiconductor device and methods of fabricating the same 有权
标题翻译：用于半导体器件的晶体管及其制造方法
公开(公告)号：US20050170620A1
公开(公告)日：2005-08-04
申请号：US11045060
申请日：2005-01-31
申请人： Jae-Yoon Yoo , Hwa-Sung Rhee , Tetsuji Ueno , Ho Lee , Seung-Hwan Lee , Hyun-Suk Kim , Moon-Han Park
发明人： Jae-Yoon Yoo , Hwa-Sung Rhee , Tetsuji Ueno , Ho Lee , Seung-Hwan Lee , Hyun-Suk Kim , Moon-Han Park
IPC分类号： H01L21/00 , H01L21/336 , H01L29/10 , H01L29/78
CPC分类号： H01L29/66537 , H01L29/1083 , H01L29/665 , H01L29/66545 , H01L29/66553 , H01L29/6659 , H01L29/7833
摘要： The present invention discloses a transistor for a semiconductor device capable of preventing the generation of a depletion capacitance in a gate pattern due to the diffusion of impurity ions. The present invention also discloses a method of fabricating the transistor.
摘要翻译：本发明公开了一种用于半导体器件的晶体管，其能够防止由于杂质离子的扩散而产生栅极图案中的耗尽电容。本发明还公开了一种制造晶体管的方法。

2. 发明授权

US07439596B2 Transistors for semiconductor device and methods of fabricating the same 有权
标题翻译：用于半导体器件的晶体管及其制造方法
公开(公告)号：US07439596B2
公开(公告)日：2008-10-21
申请号：US11045060
申请日：2005-01-31
申请人： Jae-Yoon Yoo , Hwa-Sung Rhee , Tetsuji Ueno , Ho Lee , Seung-Hwan Lee , Hyun-Suk Kim , Moon-Han Park
发明人： Jae-Yoon Yoo , Hwa-Sung Rhee , Tetsuji Ueno , Ho Lee , Seung-Hwan Lee , Hyun-Suk Kim , Moon-Han Park
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/66537 , H01L29/1083 , H01L29/665 , H01L29/66545 , H01L29/66553 , H01L29/6659 , H01L29/7833
摘要： The present invention discloses a transistor for a semiconductor device capable of preventing the generation of a depletion capacitance in a gate pattern due to the diffusion of impurity ions. The present invention also discloses a method of fabricating the transistor.
摘要翻译：本发明公开了一种用于半导体器件的晶体管，其能够防止由于杂质离子的扩散而产生栅极图案中的耗尽电容。本发明还公开了一种制造晶体管的方法。

3. 发明申请

US20080242010A1 At least penta-sided-channel type of finfet transistor 有权
标题翻译：至少五面通道型finfet晶体管
公开(公告)号：US20080242010A1
公开(公告)日：2008-10-02
申请号：US12149329
申请日：2008-04-30
申请人： Hwa-Sung Rhee , Hyun-Suk Kim , Ueno Tetsuji , Jae-Yoon Yoo , Seung-Hwan Lee , Ho Lee , Moon-han Park
发明人： Hwa-Sung Rhee , Hyun-Suk Kim , Ueno Tetsuji , Jae-Yoon Yoo , Seung-Hwan Lee , Ho Lee , Moon-han Park
IPC分类号： H01L21/336
CPC分类号： H01L29/7853 , H01L29/66795
摘要： An at least penta-sided-channel type of FinFET transistor may include: a base; a semiconductor body formed on the base, the body being arranged in a long dimension to have source/drain regions sandwiching a channel region, at least the channel, in cross-section transverse to the long dimension, having at least five planar surfaces above the base; a gate insulator on the channel region of the body; and a gate electrode formed on the gate insulator.
摘要翻译：至少五面通道类型的FinFET晶体管可以包括：基极; 形成在所述基座上的半导体本体，所述主体被布置成较长的尺寸，以使源极/漏极区域夹持沟道区域，至少所述沟道横截面与所述长尺寸的横截面具有至少五个平面基础; 主体通道区上的栅极绝缘体; 以及形成在栅极绝缘体上的栅电极。

4. 发明申请

US20050156202A1 At least penta-sided-channel type of FinFET transistor 有权
标题翻译：至少五面通道型FinFET晶体管
公开(公告)号：US20050156202A1
公开(公告)日：2005-07-21
申请号：US10986018
申请日：2004-11-12
申请人： Hwa-Sung Rhee , Hyun-Suk Kim , Ueno Tetsuji , Jae-Yoon Yoo , Seung-Hwan Lee , Ho Lee , Moon-han Park
发明人： Hwa-Sung Rhee , Hyun-Suk Kim , Ueno Tetsuji , Jae-Yoon Yoo , Seung-Hwan Lee , Ho Lee , Moon-han Park
IPC分类号： H01L21/336 , H01L29/78 , H01L29/786 , H01L29/76 , H01L21/00
CPC分类号： H01L29/7853 , H01L29/66795
摘要： An at least penta-sided-channel type of FinFET transistor may include: a base; a semiconductor body formed on the base, the body being arranged in a long dimension to have source/drain regions sandwiching a channel region, at least the channel, in cross-section transverse to the long dimension, having at least five planar surfaces above the base; a gate insulator on the channel region of the body; and a gate electrode formed on the gate insulator.
摘要翻译：至少五面通道类型的FinFET晶体管可以包括：基极; 形成在所述基座上的半导体本体，所述主体被布置成较长的尺寸，以使源极/漏极区域夹持沟道区域，至少所述沟道横截面与所述长尺寸的横截面具有至少五个平面基础; 主体通道区上的栅极绝缘体; 以及形成在栅极绝缘体上的栅电极。

5. 发明授权

US07723193B2 Method of forming an at least penta-sided-channel type of FinFET transistor 有权
标题翻译：形成至少五面通道型FinFET晶体管的方法
公开(公告)号：US07723193B2
公开(公告)日：2010-05-25
申请号：US12149329
申请日：2008-04-30
申请人： Hwa-Sung Rhee , Hyun-Suk Kim , Ueno Tetsuji , Jae-Yoon Yoo , Seung-Hwan Lee , Ho Lee , Moon-han Park
发明人： Hwa-Sung Rhee , Hyun-Suk Kim , Ueno Tetsuji , Jae-Yoon Yoo , Seung-Hwan Lee , Ho Lee , Moon-han Park
IPC分类号： H01L21/336
CPC分类号： H01L29/7853 , H01L29/66795
摘要： An at least penta-sided-channel type of FinFET transistor may include: a base; a semiconductor body formed on the base, the body being arranged in a long dimension to have source/drain regions sandwiching a channel region, at least the channel, in cross-section transverse to the long dimension, having at least five planar surfaces above the base; a gate insulator on the channel region of the body; and a gate electrode formed on the gate insulator.
摘要翻译：至少五面通道类型的FinFET晶体管可以包括：基极; 形成在所述基座上的半导体本体，所述主体被布置成较长的尺寸，以使源极/漏极区域夹持沟道区域，至少所述沟道横截面与所述长尺寸的横截面具有至少五个平面基础; 主体通道区上的栅极绝缘体; 以及形成在栅极绝缘体上的栅电极。

6. 发明授权

US07385247B2 At least penta-sided-channel type of FinFET transistor 有权
标题翻译：至少五面通道型FinFET晶体管
公开(公告)号：US07385247B2
公开(公告)日：2008-06-10
申请号：US10986018
申请日：2004-11-12
申请人： Hwa-Sung Rhee , Hyun-Suk Kim , Ueno Tetsuji , Jae-Yoon Yoo , Seung-Hwan Lee , Ho Lee , Moon-han Park
发明人： Hwa-Sung Rhee , Hyun-Suk Kim , Ueno Tetsuji , Jae-Yoon Yoo , Seung-Hwan Lee , Ho Lee , Moon-han Park
IPC分类号： H01L29/78
CPC分类号： H01L29/7853 , H01L29/66795
摘要： An at least penta-sided-channel type of FinFET transistor may include: a base; a semiconductor body formed on the base, the body being arranged in a long dimension to have source/drain regions sandwiching a channel region, at least the channel, in cross-section transverse to the long dimension, having at least five planar surfaces above the base; a gate insulator on the channel region of the body; and a gate electrode formed on the gate insulator.
摘要翻译：至少五面通道类型的FinFET晶体管可以包括：基极; 形成在所述基座上的半导体本体，所述主体被布置成较长的尺寸，以使源极/漏极区域夹持沟道区域，至少所述沟道横截面与所述长尺寸的横截面具有至少五个平面基础; 主体通道区上的栅极绝缘体; 以及形成在栅极绝缘体上的栅电极。

7. 发明授权

US07599498B2 Apparatus and method for producing 3D sound 有权
标题翻译：用于产生3D声音的装置和方法
公开(公告)号：US07599498B2
公开(公告)日：2009-10-06
申请号：US11175326
申请日：2005-07-07
申请人： Poong-Min Kim , Hyun-Suk Kim , Jin-Wook Kim , Dong-Woo Lee , In-Ho Lee , Yong-Suk Choi , Jeong-Mo Koo , Myung-Cheol Lee , Dong-Sun Shin , Jong-Woo Kim
发明人： Poong-Min Kim , Hyun-Suk Kim , Jin-Wook Kim , Dong-Woo Lee , In-Ho Lee , Yong-Suk Choi , Jeong-Mo Koo , Myung-Cheol Lee , Dong-Sun Shin , Jong-Woo Kim
IPC分类号： H04R5/00
CPC分类号： H04S5/02 , H04R2499/11 , H04S5/00
摘要： Disclosed herein is an apparatus for producing 3D sound. The apparatus includes a determination unit, a mono sound spreading unit, a stereo sound spreading unit, a selection unit, and a 3D sound accelerator. The determination unit receives a source sound file and determines whether the source sound file is mono or stereo. The mono sound spreading unit converts the source sound into pseudo-stereo sound and performs sound spreading on the pseudo-stereo sound, if the source sound is determined to be mono. The stereo sound spreading unit performs sound spreading on the source sound, if the source sound is determined to be stereo. The selection unit receives the output of the mono sound spreading unit or stereo sound spreading unit, and transfers the output to headphones if the headphone reproduction has been selected. The 3D sound accelerator receives the output from the selection unit if speaker reproduction has been selected, removes crosstalk from the output, and transfers the crosstalk-free output to speakers.
摘要翻译：本文公开了一种用于产生3D声音的装置。该装置包括确定单元，单声道扩散单元，立体声扩声单元，选择单元和3D声音加速器。确定单元接收源声音文件并确定源声音文件是单声道还是立体声。如果源声音被确定为单声道，则单声道扩散单元将源声音转换为伪立体声，并对伪立体声进行声音扩展。如果源声音被确定为立体声，则立体声扩散单元对源声音进行声音扩展。选择单元接收单声道扩声单元或立体声声音扩展单元的输出，并且如果已经选择了耳机再现，则将输出传送到耳机。如果选择了扬声器再现，则3D声音加速器从选择单元接收输出，从输出中消除串扰，并将无串扰输出传送给扬声器。

8. 发明申请

US20060008100A1 Apparatus and method for producing 3D sound 有权
公开(公告)号：US20060008100A1
公开(公告)日：2006-01-12
申请号：US11175326
申请日：2005-07-07
申请人： Poong-Min Kim , Hyun-Suk Kim , Jin-Wook Kim , Dong-Woo Lee , In-Ho Lee , Yong-Suk Choi , Jeong-Mo Koo , Myung-Cheol Lee , Dong-Sun Shin , Jong-Woo Kim
发明人： Poong-Min Kim , Hyun-Suk Kim , Jin-Wook Kim , Dong-Woo Lee , In-Ho Lee , Yong-Suk Choi , Jeong-Mo Koo , Myung-Cheol Lee , Dong-Sun Shin , Jong-Woo Kim
IPC分类号： H04R5/00 , H04R5/02
CPC分类号： H04S5/02 , H04R2499/11 , H04S5/00
摘要： Disclosed herein is an apparatus for producing 3D sound. The apparatus includes a determination unit, a mono sound spreading unit, a stereo sound spreading unit, a selection unit, and a 3D sound accelerator. The determination unit receives a source sound file and determines whether the source sound file is mono or stereo. The mono sound spreading unit converts the source sound into pseudo-stereo sound and performs sound spreading on the pseudo-stereo sound, if the source sound is determined to be mono. The stereo sound spreading unit performs sound spreading on the source sound, if the source sound is determined to be stereo. The selection unit receives the output of the mono sound spreading unit or stereo sound spreading unit, and transfers the output to headphones if the headphone reproduction has been selected. The 3D sound accelerator receives the output from the selection unit if speaker reproduction has been selected, removes crosstalk from the output, and transfers the crosstalk-free output to speakers.

9. 发明授权

US07871921B2 Methods of forming interconnection structures for semiconductor devices 有权
标题翻译：形成半导体器件互连结构的方法
公开(公告)号：US07871921B2
公开(公告)日：2011-01-18
申请号：US11022240
申请日：2004-12-22
申请人： Jin-Taek Park , Jong-Ho Park , Sung-Hoi Hur , Hyun-Suk Kim
发明人： Jin-Taek Park , Jong-Ho Park , Sung-Hoi Hur , Hyun-Suk Kim
IPC分类号： H01L21/4763
CPC分类号： H01L21/76895 , H01L21/76877 , H01L23/485
摘要： An interconnection structure for a semiconductor device includes an inter-level insulation layer disposed on a semiconductor substrate. First contact constructions penetrate the inter-level insulation layer. Second contact constructions penetrate the inter-level insulation layer. Metal interconnections connect the first contact constructions to the second contact constructions on the inter-level insulation layer. The first contact constructions include first and second plugs stacked in sequence and the second contact constructions include the second plug.
摘要翻译：半导体器件的互连结构包括设置在半导体衬底上的级间绝缘层。第一接触结构穿透层间绝缘层。第二接触构造穿透层间绝缘层。金属互连将第一接触结构连接到层间绝缘层上的第二接触结构。第一接触构造包括依次堆叠的第一和第二插塞，并且第二接触构造包括第二插塞。

10. 发明申请

US20080182354A1 METHODS OF FABRICATING CMOS IMAGE SENSORS 审中-公开
标题翻译：制作CMOS图像传感器的方法
公开(公告)号：US20080182354A1
公开(公告)日：2008-07-31
申请号：US11950249
申请日：2007-12-04
申请人： Jong-Jin Lee , Ju-Hyun Ko , Jong-Eun Park , Hyun-Suk Kim , Dong-Yoon Jang
发明人： Jong-Jin Lee , Ju-Hyun Ko , Jong-Eun Park , Hyun-Suk Kim , Dong-Yoon Jang
IPC分类号： H01L31/18
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/1463 , H01L27/14681 , H01L27/14689
摘要： CMOS image sensors and related methods of fabricating CMOS image sensors are disclosed. Fabrication of a CMOS image sensor can include forming a first impurity region having a first conductivity type in a semiconductor substrate. A second impurity region having a second conductivity type is formed in the semiconductor substrate adjacent to the first impurity region. A third impurity region having the first conductivity type is formed in the semiconductor substrate and located below the second impurity region. A transfer gate is formed on the semiconductor substrate and at least partially overlaps the first, second, and third impurity regions. A photo sensitive device is formed in the semiconductor substrate and adjacent to one side of the transfer gate. A floating diffusion region is formed in the semiconductor substrate and located adjacent to an opposite side of the transfer gate from the photosensitive device.
摘要翻译：公开了CMOS图像传感器和制造CMOS图像传感器的相关方法。 CMOS图像传感器的制造可以包括在半导体衬底中形成具有第一导电类型的第一杂质区域。在与第一杂质区相邻的半导体衬底中形成具有第二导电类型的第二杂质区。具有第一导电类型的第三杂质区形成在半导体衬底中并位于第二杂质区的下方。传输栅极形成在半导体衬底上并且至少部分地与第一，第二和第三杂质区重叠。光敏元件形成在半导体衬底中并与传输门的一侧相邻。浮动扩散区域形成在半导体衬底中并且位于与传感栅极的与光敏器件相反的一侧。

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