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    • 1. 发明授权
    • Method of fabricating a semiconductor device
    • 制造半导体器件的方法
    • US07091117B2
    • 2006-08-15
    • US10836694
    • 2004-04-30
    • Jae-Woo KimYong-Sun KoSang-Sup Jeong
    • Jae-Woo KimYong-Sun KoSang-Sup Jeong
    • H01L21/3205H01L21/4763
    • H01L29/66553H01L21/0337H01L21/0338H01L21/32139H01L21/76838H01L21/823437H01L27/10873
    • A method of fabricating a semiconductor device including sequentially forming a polysilicon layer, a first insulating layer, and a photoresist layer over a gate oxide film positioned on a semiconductor substrate. A photoresist pattern with a first groove is formed by selectively patterning the photoresist layer to partially expose a surface of the first insulating layer. A second insulating layer is formed over the photoresist pattern with the first groove and over the exposed surface of the first insulating layer. A sacrificial spacer is formed on each inner wall of the first groove by etching back the second insulating layer and forming a second groove in the first insulating layer in communication with the first groove to expose a surface of the polysilicon layer at the bottom of the second groove. The photoresist pattern is removed, and an arbitrary layer pattern is formed over the polysilicon layer at the bottom of the second groove. The sacrificial spacers and first insulating layer are removed, and a gate electrode is formed by etching the polysilicon layer using the arbitrary layer pattern as a mask.
    • 一种制造半导体器件的方法,包括在位于半导体衬底上的栅极氧化膜上顺序地形成多晶硅层,第一绝缘层和光致抗蚀剂层。 通过选择性地图案化光致抗蚀剂层以部分地暴露第一绝缘层的表面来形成具有第一凹槽的光刻胶图案。 在光致抗蚀剂图案上形成有第一绝缘层和第一绝缘层的暴露表面上的第一绝缘层。 通过蚀刻第二绝缘层并在与第一凹槽连通的第一绝缘层中形成第二凹槽,在第二凹槽的每个内壁上形成牺牲隔离物,以暴露第二凹槽底部的多晶硅层的表面 槽。 去除光致抗蚀剂图案,并且在第二凹槽底部的多晶硅层上形成任意层图案。 去除牺牲间隔物和第一绝缘层,并且通过使用任意层图案作为掩模蚀刻多晶硅层来形成栅电极。