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1. 发明授权

US06632702B2 Color image sensor and method for fabricating the same 有权
标题翻译：彩色图像传感器及其制造方法
公开(公告)号：US06632702B2
公开(公告)日：2003-10-14
申请号：US10091409
申请日：2002-03-07
申请人： Jae-Won Eom , Do-Young Lee , Kang-Jin Lee , Chan-Ki Kim , Ki-Nam Park
发明人： Jae-Won Eom , Do-Young Lee , Kang-Jin Lee , Chan-Ki Kim , Ki-Nam Park
IPC分类号： H01L2100
CPC分类号： H01L27/14603 , H01L27/14609
摘要： A method for fabricating a color image sensor for scanning and converting an optical image into electrical signals, includes the steps of: (a) forming a P-type semiconductor layer on a substrate; (b) forming field oxide layers on the P-type semiconductor layer to define regions for red, green and blue photodiodes; (c) providing an ion implantation mask having different mask patterns for the red, the green and the blue photodiodes; (d) implanting impurity ions into the P-type semiconductor layer through the use of said ion implantation mask to form N-type diffusion regions in the P-type semiconductor layer; and (e) applying a thermal process to the resulting structure to form different first, second and third depletion regions corresponding to the red, the green and the blue photodiodes.
摘要翻译：一种用于制造用于将光学图像扫描并转换为电信号的彩色图像传感器的方法包括以下步骤：（a）在基板上形成P型半导体层; （b）在P型半导体层上形成场氧化物层以限定红色，绿色和蓝色光电二极管的区域; （c）提供具有用于红色，绿色和蓝色光电二极管的不同掩模图案的离子注入掩模; （d）通过使用所述离子注入掩模将杂质离子注入到P型半导体层中，以在P型半导体层中形成N型扩散区; 和（e）对所得结构施加热处理以形成对应于红色，绿色和蓝色光电二极管的不同的第一，第二和第三耗尽区。

2. 发明授权

US06359323B1 Color image sensor and method for fabricating the same 有权
公开(公告)号：US06359323B1
公开(公告)日：2002-03-19
申请号：US09461717
申请日：1999-12-16
申请人： Jae-Won Eom , Do-Young Lee , Kang-Jin Lee , Chan-Ki Kim , Ki-Nam Park
发明人： Jae-Won Eom , Do-Young Lee , Kang-Jin Lee , Chan-Ki Kim , Ki-Nam Park
IPC分类号： H01L3100
CPC分类号： H01L27/14603 , H01L27/14609
摘要： A method for fabricating a color image sensor for scanning and converting an optical image into electrical signals, includes the steps of: (a) forming a P-type semiconductor layer on a substrate; (b) forming field oxide layers on the P-type semiconductor layer to define regions for red, green and blue photodiodes; (c) providing an ion implantation mask having different mask patterns for the red, the green and the blue photodiodes; (d) implanting impurity ions into the P-type semiconductor layer through the use of said ion implantation mask to form N-type diffusion regions in the P-type semiconductor layer; and (e) applying a thermal process to the resulting structure to form different first, second and third depletion regions corresponding to the red, the green and the blue photodiodes.

3. 发明授权

US06794215B2 Method for reducing dark current in image sensor 失效
标题翻译：降低图像传感器暗电流的方法
公开(公告)号：US06794215B2
公开(公告)日：2004-09-21
申请号：US09740947
申请日：2000-12-21
申请人： Ki-Nam Park , Oh-Bong Kwon
发明人： Ki-Nam Park , Oh-Bong Kwon
IPC分类号： H01L2100
CPC分类号： H01L27/14601 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14683 , H01L27/14692
摘要： A method for fabricating a CMOS image sensor having a characteristic of a reduced dark current includes the steps of: a) providing a semiconductor structure, wherein the semiconductor structure includes a photodiode and peripheral elements formed on a semiconductor substrate; b) forming an insulating layer on the semiconductor structure; c) forming a hydrogen containing dielectric layer on the insulting layer; d) diffusing hydrogen ions contained in the hydrogen containing dielectric layer into a surface of the photodiode, thereby removing a dangling bond; and e) removing the hydrogen containing dielectric layer.
摘要翻译：一种制造具有降低的暗电流特性的CMOS图像传感器的方法包括以下步骤：a）提供半导体结构，其中半导体结构包括光电二极管和形成在半导体衬底上的外围元件; b）在半导体结构上形成绝缘层; c）在绝缘层上形成含氢介电层; d）将包含在含氢介电层中的氢离子扩散到光电二极管的表面，从而去除悬挂键; 和e）除去含氢介电层。

4. 发明授权

US06512220B1 Semiconductor image sensor incorporating therein optical layer 有权
标题翻译：并入其中的半导体图像传感器光学层
公开(公告)号：US06512220B1
公开(公告)日：2003-01-28
申请号：US09604771
申请日：2000-06-28
申请人： Ki-Nam Park
发明人： Ki-Nam Park
IPC分类号： H01L2700
CPC分类号： H01L27/14609
摘要： A semiconductor image sensor for detecting a light incident thereto, includes a semiconductor substrate divided into a light sensing region and a peripheral circuit region, a photodiode formed on top of the light sensing region, at least one transistor formed on top of the peripheral circuit region, at least one insulating layer formed on top of the photodiode and the transistor; and an optical layer formed on the insulating layer to efficiently transmit the light to the photodiode.
摘要翻译：用于检测入射到其上的光的半导体图像传感器包括被分成光感测区域和外围电路区域的半导体衬底，形成在感光区域顶部的光电二极管，形成在外围电路区域的顶部上的至少一个晶体管形成在所述光电二极管和所述晶体管的顶部上的至少一个绝缘层; 以及形成在绝缘层上以有效地将光传输到光电二极管的光学层。

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