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1. 发明授权

US08290477B2 Method for management a multimedia data of mobile communication terminal and mobile communication terminal therefor 有权
标题翻译：用于管理移动通信终端和移动通信终端的多媒体数据的方法
公开(公告)号：US08290477B2
公开(公告)日：2012-10-16
申请号：US12580705
申请日：2009-10-16
申请人： Jae-Hyun Park , Eun-O Lee , Kang-Hoon Lee
发明人： Jae-Hyun Park , Eun-O Lee , Kang-Hoon Lee
IPC分类号： H04M1/725
CPC分类号： H04M1/72547 , H04L51/063
摘要： A method is provided for managing multimedia data in a mobile communication terminal. The method includes sending a multimedia message upon a request for sending a multimedia message; deleting multimedia data attached to the multimedia message, and reconfiguring a multimedia message that includes information about a path where the attached multimedia data is stored; and storing the reconfigured multimedia message in a Sent box.
摘要翻译：提供了一种用于管理移动通信终端中的多媒体数据的方法。该方法包括在发送多媒体消息的请求时发送多媒体消息; 删除附加到所述多媒体消息的多媒体数据，以及重新配置包括关于存储所附加的多媒体数据的路径的信息的多媒体消息; 并将重新配置的多媒体消息存储在“已发送”框中。

2. 发明授权

US10599304B2 Content player 有权
公开(公告)号：US10599304B2
公开(公告)日：2020-03-24
申请号：US14117891
申请日：2012-04-10
申请人： Hisayuki Kunigita , Seung-Hyun Lee , Jae-Hyun Park , Ju-Yeong Ji
发明人： Hisayuki Kunigita , Seung-Hyun Lee , Jae-Hyun Park , Ju-Yeong Ji
IPC分类号： G06F3/0484 , H04N21/466 , H04N21/4788
摘要： The present invention provides a content player allowing a user to select content to view using a viewing history of content viewed by another user. The content player performs a content playing process in response to a user instruction. The content player acquires viewing history information about content viewed by a related user related to the user with a content player different from the content player. The content player presents, to the user, the acquired viewing history information. The content player performs, if the user selects the presented viewing history information, a playing process of content indicated by the selected viewing history information.

3. 发明授权

US09207386B2 Backlight unit and liquid crystal display module including the same 有权
标题翻译：背光单元和液晶显示模块包括它们
公开(公告)号：US09207386B2
公开(公告)日：2015-12-08
申请号：US12585111
申请日：2009-09-03
申请人： Sung-Hun Kim , Hyeok-Joon Yoon , Byoung-Ku Kim , Jae-Hyun Park
发明人： Sung-Hun Kim , Hyeok-Joon Yoon , Byoung-Ku Kim , Jae-Hyun Park
IPC分类号： G02F1/1335 , F21V8/00
CPC分类号： G02B6/0053 , G02B6/0051
摘要： A backlight unit for a display device includes a light guide plate; a reflective sheet under the light guide plate; a lamp at least one side of the light guide plate and providing a light into the light guide plate; and an optical sheet disposed on the light guide plate and including a first lenticular sheet, the first lenticular sheet including a base film for diffusing the light through the light guide plate, a first lenticular lens disposed on a front surface of the base film and having a half-cylinder shape and a first printing pattern on at least one edge of a rear surface of the base film.
摘要翻译：用于显示装置的背光单元包括导光板; 在导光板下的反射片; 灯，至少一个所述导光板的一侧，并向所述导光板提供光; 以及设置在所述导光板上并包括第一透镜片的光学片，所述第一透镜片包括用于通过所述导光板使光漫射的基底膜，设置在所述基底膜的前表面上的第一双凸透镜，半圆柱形状和第一印刷图案在基膜的后表面的至少一个边缘上。

4. 发明授权

US09154700B2 Apparatus and method for image capture using image stored in camera 有权
标题翻译：使用存储在相机中的图像进行图像捕获的装置和方法
公开(公告)号：US09154700B2
公开(公告)日：2015-10-06
申请号：US12580775
申请日：2009-10-16
申请人： Young-Kwon Yoon , Seung-Woo Lee , Jae-Hyun Park
发明人： Young-Kwon Yoon , Seung-Woo Lee , Jae-Hyun Park
IPC分类号： H04N5/232 , H04N5/235 , H04N1/00 , H04N1/21 , H04N101/00
CPC分类号： H04N5/23293 , G06T1/0007 , H04N1/0044 , H04N1/2137 , H04N1/2145 , H04N5/23222 , H04N5/2356 , H04N2101/00
摘要： An apparatus for capturing an image using an image stored in a camera includes a lens system for optically receiving an image, an image signal processor for converting the received image into a preview image and generating a first-resolution image using the received image at predetermined periods, a first buffer for receiving the first-resolution image from the image signal processor and temporarily storing the received first-resolution image, a display for displaying the preview image received from the image signal processor and the first-resolution image received from the first buffer, and a controller for controlling the image signal processor to display the first-resolution image temporarily stored in the first buffer on the display upon receiving an image capturing signal.
摘要翻译：使用存储在相机中的图像来拍摄图像的装置包括用于光学接收图像的透镜系统，用于将接收到的图像转换成预览图像的图像信号处理器，并且以预定周期生成使用接收图像的第一分辨率图像用于从图像信号处理器接收第一分辨率图像并临时存储所接收的第一分辨率图像的第一缓冲器，用于显示从图像信号处理器接收的预览图像的显示器和从第一缓冲器接收的第一分辨率图像以及控制器，用于控制图像信号处理器在接收到图像捕获信号时在显示器上显示临时存储在第一缓冲器中的第一分辨率图像。

5. 发明授权

US08564572B2 Method for auto angle setting of infrared sensor module and display device having the same applied thereto 有权
标题翻译：红外线传感器模块的自动角度设定方法及其应用的显示装置
公开(公告)号：US08564572B2
公开(公告)日：2013-10-22
申请号：US13283797
申请日：2011-10-28
申请人： Jae-Hyun Park , Byung-Chun Yu , Shi-Cheol Song , Suk-Won Choi
发明人： Jae-Hyun Park , Byung-Chun Yu , Shi-Cheol Song , Suk-Won Choi
IPC分类号： G06F3/041
CPC分类号： G06F3/0418 , G06F3/0428
摘要： The present invention relates to a method for auto angle setting of an infrared sensor module having a light emitting unit and a sensor unit arranged at least two corners of a display panel, includes the steps of selecting a peak detection mode or a slope detection mode; in the peak detection mode, setting a pixel of in the sensor unit which senses a light quantity as a reference point corresponding to a corner other infrared sensor module is arranged at; in the slope detection mode, analyzing the light quantities of a start pixel block and an end pixel block in the sensor unit and setting a pixel which forms a greatest slope as a start point or an end point; and setting an effective angle of view in the sensor unit with reference to the reference point, the start point, and the end point.
摘要翻译：本发明涉及一种具有发光单元和布置在显示面板的至少两个角的传感器单元的红外传感器模块的自动角度设置方法，包括选择峰值检测模式或斜率检测模式的步骤; 在峰值检测模式中，将感测光量的传感器单元中的像素设置为与其他红外线传感器模块对应的基准点; 在斜率检测模式中，分析传感器单元中的开始像素块和结束像素块的光量，并将形成最大斜率的像素设置为起点或终点; 并参照参考点，起始点和终点设置传感器单元中的有效视角。

6. 发明授权

US08148193B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08148193B2
公开(公告)日：2012-04-03
申请号：US13236941
申请日：2011-09-20
申请人： Jae-Hyun Park , Jae-Hee Oh
发明人： Jae-Hyun Park , Jae-Hee Oh
IPC分类号： H01L21/00
CPC分类号： H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： A semiconductor device such as a phase change memory device includes a semiconductor substrate including an active region, a conductive pattern disposed to expose the active region, an interlayer dielectric pattern provided on the conductive pattern and including an opening formed on the exposed active region and a contact hole spaced apart from the opening to expose the conductive pattern, a semiconductor pattern and a heater electrode pattern electrically connected to the exposed active region and provided in the opening, a contact plug connected to the exposed conductive pattern and provided to fill the contact hole, and a phase change material layer provided on the heater electrode pattern.
摘要翻译：诸如相变存储器件的半导体器件包括：半导体衬底，包括有源区，布置成暴露有源区的导电图案;设置在导电图案上的层间电介质图案，并且包括形成在暴露的有源区上的开口;以及接触孔与开口间隔开以暴露导电图案，半导体图案和电连接到暴露的有源区并且设置在开口中的加热器电极图案，连接到暴露的导电图案并被提供以填充接触孔的接触插塞以及设置在加热器电极图案上的相变材料层。

7. 发明授权

US08119503B2 Methods of forming integrated circuit devices having vertical semiconductor interconnects and diodes therein and devices formed thereby 有权
标题翻译：形成其中具有垂直半导体互连和二极管的集成电路器件的方法及由此形成的器件
公开(公告)号：US08119503B2
公开(公告)日：2012-02-21
申请号：US12498528
申请日：2009-07-07
申请人： Kong-Soo Lee , Kyoung-Seok Kim , Sang-Jin Park , Chang-Hoon Lee , Ji-Hyun Jeong , Jae-Hyun Park , Jae-Hee Oh
发明人： Kong-Soo Lee , Kyoung-Seok Kim , Sang-Jin Park , Chang-Hoon Lee , Ji-Hyun Jeong , Jae-Hyun Park , Jae-Hee Oh
IPC分类号： H01L47/00 , H01L21/20
CPC分类号： H01L27/1021 , H01L27/24 , H01L29/8613
摘要： Methods of forming integrated circuit devices include forming an etch stop layer on a surface of a semiconductor substrate and forming a first interlayer insulating layer on the etch stop layer. The first interlayer insulating layer is patterned to define an opening therein that exposes a first portion of the etch stop layer. This first portion of the etch stop layer is then removed to thereby expose an underlying portion of the surface of the semiconductor substrate. This removal of the etch stop layer may be performed by wet etching the first portion of the etch stop layer using a phosphoric acid solution. A semiconductor region is then selectively grown into the opening, using the exposed portion of the surface of the semiconductor substrate as an epitaxial seed layer.
摘要翻译：形成集成电路器件的方法包括在半导体衬底的表面上形成蚀刻停止层，并在蚀刻停止层上形成第一层间绝缘层。图案化第一层间绝缘层以限定其中暴露出蚀刻停止层的第一部分的开口。然后去除蚀刻停止层的第一部分，从而暴露半导体衬底的表面的下面部分。蚀刻停止层的这种去除可以通过使用磷酸溶液湿蚀刻蚀刻停止层的第一部分来进行。然后使用半导体衬底的表面的暴露部分作为外延种子层，选择性地将半导体区域生长到开口中。

8. 发明授权

US08119478B2 Multi-bit phase-change random access memory (PRAM) with diameter-controlled contacts and methods of fabricating and programming the same 有权
标题翻译：具有直径控制触点的多位相变随机存取存储器（PRAM）及其制造和编程方法
公开(公告)号：US08119478B2
公开(公告)日：2012-02-21
申请号：US12640567
申请日：2009-12-17
申请人： Won-Cheol Jeong , Hyeong-Jun Kim , Se-Ho Lee , Jae-Hyun Park , Chang-Wook Jeong
发明人： Won-Cheol Jeong , Hyeong-Jun Kim , Se-Ho Lee , Jae-Hyun Park , Chang-Wook Jeong
IPC分类号： H01L21/336
CPC分类号： H01L45/06 , G11C11/56 , G11C11/5678 , G11C13/0004 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： A phase-change random-access memory (PRAM) device includes a chalcogenide element, the chalcogenide element comprising a material which can assume a crystalline state or an amorphous state upon application of a heating current. A first contact is connected to a first region of the chalcogenide element and has a first cross-sectional area. A second contact is connected to a second region of the chalcogenide element and having a second cross-sectional area. A first programmable volume of the chalcogenide material is defined in the first region of the chalcogenide element, a state of the first programmable volume being programmable according to a resistance associated with the first contact. A second programmable volume of the chalcogenide material is defined in the second region of the chalcogenide element, a state of the second programmable volume being programmable according to a second resistance associated with the second contact.
摘要翻译：相变随机存取存储器（PRAM）装置包括硫族化物元素，硫族化物元素包括在施加加热电流时可以呈现结晶状态或非晶状态的材料。第一触点连接到硫族化物元件的第一区域并且具有第一横截面积。第二接触件连接到硫族化物元件的第二区域并且具有第二横截面积。硫族化物材料的第一可编程体积被限定在硫族化物元素的第一区域中，第一可编程体积的状态可根据与第一接触相关联的电阻来编程。硫族化物材料的第二可编程体积被限定在硫族化物元素的第二区域中，第二可编程体积的状态可根据与第二接触相关联的第二电阻来编程。

9. 发明授权

US08031027B2 Voltage-controlled oscillator, phase-locked loop (PLL) circuit, and clock generator 有权
标题翻译：压控振荡器，锁相环（PLL）电路和时钟发生器
公开(公告)号：US08031027B2
公开(公告)日：2011-10-04
申请号：US12479132
申请日：2009-06-05
申请人： Jae-Hyun Park , Jong-Shin Shin
发明人： Jae-Hyun Park , Jong-Shin Shin
IPC分类号： H03L1/00 , H03L7/085 , H03K3/03
CPC分类号： H03L7/0893 , H03L7/0995 , H03L7/0996 , H03L7/18 , H03L2207/06
摘要： A voltage-controlled oscillator includes a voltage regulator, and a delay unit. The voltage regulator independently receives a first oscillation control signal and a second oscillation control signal to provide a regulated voltage signal which is represented by a regular ratio of combination of the first and second oscillation control signals, and the regulated voltage signal is feedback to the voltage regulator. The delay unit generates an output signal having a frequency varying in response to the regulated voltage signal.
摘要翻译：压控振荡器包括电压调节器和延迟单元。电压调节器独立地接收第一振荡控制信号和第二振荡控制信号，以提供由第一和第二振荡控制信号的组合的规则比率表示的调节电压信号，并且调节电压信号被反馈到电压调节器延迟单元产生响应于调节电压信号而变化的频率的输出信号。

10. 发明授权

US08030129B2 Method of fabricating nonvolatile memory device 有权
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US08030129B2
公开(公告)日：2011-10-04
申请号：US12655047
申请日：2009-12-21
申请人： Ji-Hyun Jeong , Jae-Hee Oh , Jae-Hyun Park
发明人： Ji-Hyun Jeong , Jae-Hee Oh , Jae-Hyun Park
IPC分类号： H01L21/06
CPC分类号： H01L27/24
摘要： A method of manufacturing a nonvolatile memory device including forming on a lower insulating layer a first sacrificial pattern having first openings extending in a first direction, forming a second sacrificial pattern having second openings extending in a second direction on the lower insulating layer and the first sacrificial pattern wherein the second openings intersect the first openings, etching the lower insulating layer using the first and second sacrificial patterns to form a lower insulating pattern having contact holes defined by a region where the first and second openings intersect each other, forming a bottom electrode in the contact holes, and forming a variable resistance pattern on the lower insulating pattern so that a portion of the variable resistance pattern connects to a top surface of the bottom electrode.
摘要翻译：一种制造非易失性存储器件的方法，包括在下绝缘层上形成第一牺牲图案，所述第一牺牲图案具有沿第一方向延伸的第一开口，形成第二牺牲图案，所述第二牺牲图案具有在所述下绝缘层上沿第二方向延伸的第二开口，图案，其中所述第二开口与所述第一开口相交;使用所述第一和第二牺牲图案蚀刻所述下绝缘层，以形成具有由所述第一开口和所述第二开口相交的区域限定的接触孔的下绝缘图案，形成底部电极接触孔，并且在下绝缘图案上形成可变电阻图案，使得可变电阻图案的一部分连接到底电极的顶表面。

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