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1. 发明申请

US20070138525A1 Mechanical memory device and method of manufacturing the same 失效
标题翻译：机械记忆装置及其制造方法
公开(公告)号：US20070138525A1
公开(公告)日：2007-06-21
申请号：US11606966
申请日：2006-12-01
申请人： Jae-Eun Jang , Seung-Nam Cha , Byong-Gwon Song , Yong-Wan Jin
发明人： Jae-Eun Jang , Seung-Nam Cha , Byong-Gwon Song , Yong-Wan Jin
IPC分类号： H01L29/94 , H01L27/108 , H01L29/76 , H01L31/119
CPC分类号： G11C13/025 , B82Y10/00 , G11C23/00 , H01L27/10805 , H01L27/1203 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/86 , Y10S977/724 , Y10S977/725
摘要： A memory device that performs writing and reading operations using a mechanical movement of a nanowire, and a method of manufacturing the memory device are provided. The memory device includes a source electrode, a drain electrode, and a gate electrode, each of which is formed on an insulating substrate. A nanowire capacitor is formed on the source electrode. The nanowire capacitor includes a first nanowire vertically grown from the source electrode, a dielectric layer formed on the outer surface of the first nanowire, and a floating electrode formed on the outer surface of the dielectric layer. A second nanowire is vertically grown on the drain electrode. The drain electrode is arranged between the source electrode and the gate electrode. The second nanowire is elastically deformed and contacts the nanowire capacitor when a drain voltage is applied to the drain electrode, and polarity of the drain voltage is opposite to polarity of a source voltage that is applied to the source electrode. Information is stored in the memory device in a form of a charged or non-charged state of the nanowire capacitor. Reading and writing operation of the memory device is performed by the mechanical movement of the second nanowire.
摘要翻译：提供了使用纳米线的机械移动执行写入和读取操作的存储器件，以及制造存储器件的方法。存储器件包括源电极，漏电极和栅电极，它们都形成在绝缘衬底上。在源电极上形成纳米线电容器。纳米线电容器包括从源极垂直生长的第一纳米线，形成在第一纳米线的外表面上的电介质层和形成在电介质层的外表面上的浮动电极。在漏电极上垂直生长第二纳米线。漏极布置在源电极和栅电极之间。当向漏电极施加漏极电压时，第二纳米线弹性变形并与纳米线电容器接触，并且漏极电压的极性与施加到源电极的源极电压的极性相反。信息以纳米线电容器的充电或非充电状态的形式存储在存储器件中。通过第二纳米线的机械运动来进行记忆装置的读写操作。

2. 发明授权

US08064249B2 Nanowire electromechanical switching device, method of manufacturing the same and electromechanical memory device using the nanowire electromechanical switching device 有权
标题翻译：纳米线机电开关器件及其制造方法和使用纳米线机电开关器件的机电存储器件
公开(公告)号：US08064249B2
公开(公告)日：2011-11-22
申请号：US11889515
申请日：2007-08-14
申请人： Jae-Eun Jang , Seung-Nam Cha , Byong-Gwon Song , Yong-Wan Jin
发明人： Jae-Eun Jang , Seung-Nam Cha , Byong-Gwon Song , Yong-Wan Jin
IPC分类号： G11C11/50
CPC分类号： G11C13/025 , B82Y10/00 , G11C23/00 , H01L51/0048 , Y10S977/943
摘要： A nanowire electromechanical switching device is constructed with a source electrode and a drain electrode disposed on an insulating substrate and spaced apart from each other, a first nanowire vertically grown on the source electrode and to which a V1 voltage is applied, a second nanowire vertically grown on the drain electrode and to which a V2 voltage having an opposite polarity to that of the V1 voltage is applied, and a gate electrode spaced apart from the second nanowire, partially surrounding the second nanowire and having an opening that faces the first nanowire in order to avoid disturbing a mutual switching operation of the first nanowire and the second nanowire and to which a V3 voltage having the same polarity as that of the V2 voltage is applied.
摘要翻译：纳米线机电开关器件由源电极和漏电极构成，绝缘基片设置在绝缘基片上并彼此间隔开，第一纳米线在源电极上垂直生长并施加V1电压，第二纳米线垂直生长并且施加具有与V1电压相反的极性的V2电压的栅极电极和与第二纳米线间隔开的栅电极，部分地围绕第二纳米线并且具有面向第一纳米线的开口以避免干扰第一纳米线和第二纳米线的相互切换操作，并且施加具有与V2电压相同极性的V3电压。

3. 发明授权

US07719111B2 Nanowire electromechanical device and method of fabricating the same 失效
标题翻译：纳米线机电装置及其制造方法
公开(公告)号：US07719111B2
公开(公告)日：2010-05-18
申请号：US11408054
申请日：2006-04-21
申请人： Jae-Eun Jang , Seung-Nam Cha , Yong-Wan Jin , Byong-Gwon Song
发明人： Jae-Eun Jang , Seung-Nam Cha , Yong-Wan Jin , Byong-Gwon Song
IPC分类号： H01L21/28
CPC分类号： B81C1/00111 , B81B3/0086 , B81B2201/018 , H01H1/0094 , Y10S977/762 , Y10T29/49105
摘要： A nanowire electronmechanical device with an improved structure and a method of fabricating the same prevent burning of two nanowires which are switched due to contact with each other while providing stable on-off switching characteristics. The nanowire electromechanical device comprises: an insulating substrate; first and third electrodes spaced apart from each other on the insulating substrate, wherein a negative voltage and a positive voltage, varying within a predetermined range, are applied to the first and third electrodes, respectively; a second electrode interposed between the first and third electrodes, a constant positive voltage, lower than the voltage applied to the third electrode, being applied to the second electrode; a first nanowire vertically grown on the first electrode and charged with a negative charge; a second nanowire vertically grown on the second electrode and charged with a positive charge; and a third nanowire vertically grown on the third electrode and charged with an amount of positive charge corresponding to the magnitude of the varying voltage applied to the third electrode.
摘要翻译：具有改进结构的纳米线电子机械装置及其制造方法防止由于彼此接触而切换的两个纳米线的燃烧，同时提供稳定的开 - 关开关特性。纳米线机电装置包括：绝缘基板; 在绝缘基板上彼此间隔开的第一和第三电极，其中在预定范围内变化的负电压和正电压分别施加到第一和第三电极; 插入在第一和第三电极之间的第二电极，施加到第二电极的恒定的正电压低于施加到第三电极的电压; 在第一电极上垂直生长并带有负电荷的第一纳米线; 在第二电极上垂直生长并带有正电荷的第二纳米线; 以及在第三电极上垂直生长的第三纳米线，并充有与施加到第三电极的变化电压的幅度相对应的一定量的正电荷。

4. 发明授权

US07564085B2 Mechanical memory device and method of manufacturing the same 失效
标题翻译：机械记忆装置及其制造方法
公开(公告)号：US07564085B2
公开(公告)日：2009-07-21
申请号：US11606966
申请日：2006-12-01
申请人： Jae-Eun Jang , Seung-Nam Cha , Byong-Gwon Song , Yong-Wan Jin
发明人： Jae-Eun Jang , Seung-Nam Cha , Byong-Gwon Song , Yong-Wan Jin
IPC分类号： H01L27/108 , H01L29/08
CPC分类号： G11C13/025 , B82Y10/00 , G11C23/00 , H01L27/10805 , H01L27/1203 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/86 , Y10S977/724 , Y10S977/725
摘要： A memory device that performs writing and reading operations using a mechanical movement of a nanowire, and a method of manufacturing the memory device are provided. The memory device includes a source electrode, a drain electrode, and a gate electrode, each of which is formed on an insulating substrate. A nanowire capacitor is formed on the source electrode. The nanowire capacitor includes a first nanowire vertically grown from the source electrode, a dielectric layer formed on the outer surface of the first nanowire, and a floating electrode formed on the outer surface of the dielectric layer. A second nanowire is vertically grown on the drain electrode. The drain electrode is arranged between the source electrode and the gate electrode. The second nanowire is elastically deformed and contacts the nanowire capacitor when a drain voltage is applied to the drain electrode, and polarity of the drain voltage is opposite to polarity of a source voltage that is applied to the source electrode. Information is stored in the memory device in a form of a charged or non-charged state of the nanowire capacitor. Reading and writing operation of the memory device is performed by the mechanical movement of the second nanowire.
摘要翻译：提供了使用纳米线的机械移动执行写入和读取操作的存储器件，以及制造存储器件的方法。存储器件包括源电极，漏电极和栅电极，它们都形成在绝缘衬底上。在源电极上形成纳米线电容器。纳米线电容器包括从源极垂直生长的第一纳米线，形成在第一纳米线的外表面上的电介质层和形成在电介质层的外表面上的浮动电极。在漏电极上垂直生长第二纳米线。漏极布置在源电极和栅电极之间。当向漏电极施加漏极电压时，第二纳米线弹性变形并与纳米线电容器接触，并且漏极电压的极性与施加到源电极的源极电压的极性相反。信息以纳米线电容器的充电或非充电状态的形式存储在存储器件中。通过第二纳米线的机械运动来进行记忆装置的读写操作。

5. 发明申请

US20080061351A1 Nanowire electromechanical switching device, method of manufacturing the same and electromechanical memory device using the nanowire electromechanical switching device 有权
标题翻译：纳米线机电开关器件及其制造方法和使用纳米线机电开关器件的机电存储器件
公开(公告)号：US20080061351A1
公开(公告)日：2008-03-13
申请号：US11889515
申请日：2007-08-14
申请人： Jae-Eun Jang , Seung-Nam Cha , Byong-Gwon Song , Yong-Wan Jin
发明人： Jae-Eun Jang , Seung-Nam Cha , Byong-Gwon Song , Yong-Wan Jin
IPC分类号： H01L29/788 , H01H57/00 , H01L21/00
CPC分类号： G11C13/025 , B82Y10/00 , G11C23/00 , H01L51/0048 , Y10S977/943
摘要： A nanowire electromechanical switching device is constructed with a source electrode and a drain electrode disposed on an insulating substrate and spaced apart from each other, a first nanowire vertically grown on the source electrode and to which a V1 voltage is applied, a second nanowire vertically grown on the drain electrode and to which a V2 voltage having an opposite polarity to that of the V1 voltage is applied, and a gate electrode spaced apart from the second nanowire, partially surrounding the second nanowire and having an opening that faces the first nanowire in order to avoid disturbing a mutual switching operation of the first nanowire and the second nanowire and to which a V3 voltage having the same polarity as that of the V2 voltage is applied.
摘要翻译：纳米线机电开关器件由源电极和漏电极构成，绝缘基片设置在绝缘基片上并彼此隔开，第一纳米线在源电极上垂直生长，并且V 1电压施加在漏电极上垂直生长的第二纳米线，并且施加具有与V 1电压的极性相反极性的V 2电压，并且栅极电极与第二纳米线间隔开，部分地围绕第二纳米线并且具有面向第一纳米线的开口，以避免干扰第一纳米线和第二纳米线的相互切换操作，并且V 3 施加具有与V 2电压相同极性的电压。

6. 发明授权

US08053846B2 Field effect transistor (FET) having nano tube and method of manufacturing the FET 有权
标题翻译：具有纳米管的场效应晶体管（FET）及其制造方法
公开(公告)号：US08053846B2
公开(公告)日：2011-11-08
申请号：US11826170
申请日：2007-07-12
申请人： Seung-Nam Cha , Jae-Eun Jang , Jae-Eun Jung , Yong-Wan Jin , Byong-Gwon Song
发明人： Seung-Nam Cha , Jae-Eun Jang , Jae-Eun Jung , Yong-Wan Jin , Byong-Gwon Song
IPC分类号： H01L27/088
CPC分类号： H01L29/42372 , H01L21/2652 , H01L21/2807 , H01L21/28114 , H01L29/42376 , H01L29/4238 , H01L29/49 , H01L29/515 , H01L29/6659
摘要： A transistor includes: a semiconductor substrate; a channel region arranged on the semiconductor substrate; a source and a drain respectively arranged on either side of the channel region; and a conductive nano tube gate arranged on the semiconductor substrate to transverse the channel region between the source and the drain. Its method of manufacture includes: arranging a conductive nano tube on a surface of a semiconductor substrate; defining source and drain regions having predetermined sizes and traversing the nano tube; forming a metal layer on the source and drain regions; removing a portion of the metal layer formed on the nano tube to respectively form source and drain electrodes separated from the metal layer on either side of the nano tube; and doping a channel region below the nano tube arranged between the source and drain electrodes by ion-implanting.
摘要翻译：晶体管包括：半导体衬底; 布置在所述半导体衬底上的沟道区; 分别布置在通道区域的任一侧上的源极和漏极; 以及布置在半导体衬底上以横向源极和漏极之间的沟道区域的导电纳米管栅极。其制造方法包括：在半导体衬底的表面上布置导电纳米管; 限定具有预定尺寸并穿过纳米管的源区和漏区; 在源极和漏极区域上形成金属层; 去除形成在纳米管上的金属层的一部分，以分别形成与纳米管的任一侧上的金属层分离的源极和漏极; 以及通过离子注入在排列在源极和漏极之间的纳米管下方的沟道区域掺杂。

7. 发明申请

US20080150043A1 Field Effect Transistor (FET) having nano tube and method of manufacturing the FET 有权
标题翻译：具有纳米管的场效应晶体管（FET）和制造FET的方法
公开(公告)号：US20080150043A1
公开(公告)日：2008-06-26
申请号：US11826170
申请日：2007-07-12
申请人： Seung-Nam Cha , Jae-Eun Jang , Jae-Eun Jung , Yong-Wan Jin , Byong-Gwon Song
发明人： Seung-Nam Cha , Jae-Eun Jang , Jae-Eun Jung , Yong-Wan Jin , Byong-Gwon Song
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/42372 , H01L21/2652 , H01L21/2807 , H01L21/28114 , H01L29/42376 , H01L29/4238 , H01L29/49 , H01L29/515 , H01L29/6659
摘要： A transistor includes: a semiconductor substrate; a channel region arranged on the semiconductor substrate; a source and a drain respectively arranged on either side of the channel region; and a conductive nano tube gate arranged on the semiconductor substrate to transverse the channel region between the source and the drain. Its method of manufacture includes: arranging a conductive nano tube on a surface of a semiconductor substrate; defining source and drain regions having predetermined sizes and traversing the nano tube; forming a metal layer on the source and drain regions; removing a portion of the metal layer formed on the nano tube to respectively form source and drain electrodes separated from the metal layer on either side of the nano tube; and doping a channel region below the nano tube arranged between the source and drain electrodes by ion-implanting.
摘要翻译：晶体管包括：半导体衬底; 布置在所述半导体衬底上的沟道区; 分别布置在通道区域的任一侧上的源极和漏极; 以及布置在半导体衬底上以横向源极和漏极之间的沟道区域的导电纳米管栅极。其制造方法包括：在半导体衬底的表面上布置导电纳米管; 限定具有预定尺寸并穿过纳米管的源区和漏区; 在源极和漏极区域上形成金属层; 去除形成在纳米管上的金属层的一部分，以分别形成与纳米管的任一侧上的金属层分离的源极和漏极; 以及通过离子注入在排列在源极和漏极之间的纳米管下方的沟道区域掺杂。

8. 发明申请

US20070051970A1 Nanowire electromechanical device and method of fabricating the same 失效
标题翻译：纳米线机电装置及其制造方法
公开(公告)号：US20070051970A1
公开(公告)日：2007-03-08
申请号：US11408054
申请日：2006-04-21
申请人： Jae-Eun Jang , Seung-nam Cha , Yong-Wan Jin , Byong-Gwon Song
发明人： Jae-Eun Jang , Seung-nam Cha , Yong-Wan Jin , Byong-Gwon Song
IPC分类号： H01L29/74
CPC分类号： B81C1/00111 , B81B3/0086 , B81B2201/018 , H01H1/0094 , Y10S977/762 , Y10T29/49105
摘要： A nanowire electronmechanical device with an improved structure and a method of fabricating the same prevent burning of two nanowires which are switched due to contact with each other while providing stable on-off switching characteristics. The nanowire electromechanical device comprises: an insulating substrate; first and third electrodes spaced apart from each other on the insulating substrate, wherein a negative voltage and a positive voltage, varying within a predetermined range, are applied to the first and third electrodes, respectively; a second electrode interposed between the first and third electrodes, a constant positive voltage, lower than the voltage applied to the third electrode, being applied to the second electrode; a first nanowire vertically grown on the first electrode and charged with a negative charge; a second nanowire vertically grown on the second electrode and charged with a positive charge; and a third nanowire vertically grown on the third electrode and charged with an amount of positive charge corresponding to the magnitude of the varying voltage applied to the third electrode.
摘要翻译：具有改进的结构的纳米线电子机械装置及其制造方法防止由于彼此接触而切换的两个纳米线的燃烧，同时提供稳定的开 - 关开关特性。纳米线机电装置包括：绝缘基板; 第一和第三电极在绝缘基板上彼此间隔开，其中在预定范围内变化的负电压和正电压分别施加到第一和第三电极; 插入在第一和第三电极之间的第二电极，施加到第二电极的恒定的正电压低于施加到第三电极的电压; 在第一电极上垂直生长并带有负电荷的第一纳米线; 在第二电极上垂直生长并带有正电荷的第二纳米线; 以及在第三电极上垂直生长的第三纳米线，并充有与施加到第三电极的变化电压的幅度相对应的一定量的正电荷。

9. 发明授权

US07972930B2 Transistor and method of manufacturing the same 有权
标题翻译：晶体管及其制造方法
公开(公告)号：US07972930B2
公开(公告)日：2011-07-05
申请号：US11987250
申请日：2007-11-28
申请人： Jae-Eun Jang , Seung-Nam Cha , Jae-Eun Jung , Yong-Wan Jin
发明人： Jae-Eun Jang , Seung-Nam Cha , Jae-Eun Jung , Yong-Wan Jin
IPC分类号： H01L21/336
CPC分类号： H01L29/775 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/42356 , H01L29/42392 , H01L29/78681 , H01L29/7869 , H01L29/78696 , H01L51/0048 , H01L51/0525 , H01L51/0558 , Y10S977/762
摘要： In a transistor and a method of manufacturing the same, the transistor includes a channel layer arranged on a substrate, a source electrode and a drain electrode formed on the substrate so as to contact respective ends of the channel layer, a gate insulating layer surrounding the channel layer between the source electrode and the drain electrode, and a gate electrode surrounding the gate insulating layer.
摘要翻译：在晶体管及其制造方法中，晶体管包括布置在基板上的沟道层，形成在基板上的源电极和漏电极，以便与沟道层的各个端部接触，围绕源电极和漏电极之间的沟道层，以及围绕栅极绝缘层的栅电极。

10. 发明申请

US20080230853A1 Transistor and method of manufacturing the same 有权
标题翻译：晶体管及其制造方法
公开(公告)号：US20080230853A1
公开(公告)日：2008-09-25
申请号：US11987250
申请日：2007-11-28
申请人： Jae-Eun Jang , Seung-Nam Cha , Jae-Eun Jung , Yong-Wan Jin
发明人： Jae-Eun Jang , Seung-Nam Cha , Jae-Eun Jung , Yong-Wan Jin
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/775 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/42356 , H01L29/42392 , H01L29/78681 , H01L29/7869 , H01L29/78696 , H01L51/0048 , H01L51/0525 , H01L51/0558 , Y10S977/762
摘要： In a transistor and a method of manufacturing the same, the transistor includes a channel layer arranged on a substrate, a source electrode and a drain electrode formed on the substrate so as to contact respective ends of the channel layer, a gate insulating layer surrounding the channel layer between the source electrode and the drain electrode, and a gate electrode surrounding the gate insulating layer.
摘要翻译：在晶体管及其制造方法中，晶体管包括布置在基板上的沟道层，形成在基板上的源电极和漏电极，以便与沟道层的各个端部接触，围绕源电极和漏电极之间的沟道层，以及围绕栅极绝缘层的栅电极。

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