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1. 发明授权

US07915106B2 Method of fabricating T-gate 失效
标题翻译：制造T型门的方法
公开(公告)号：US07915106B2
公开(公告)日：2011-03-29
申请号：US12270016
申请日：2008-11-13
申请人： Jae Yeob Shim , Hyung Sup Yoon , Dong Min Kang , Ju Yeon Hong , Kyung Ho Lee
发明人： Jae Yeob Shim , Hyung Sup Yoon , Dong Min Kang , Ju Yeon Hong , Kyung Ho Lee
IPC分类号： H01L21/338 , H01L21/44 , H01L21/28
CPC分类号： H01L21/0331 , H01L21/28587
摘要： A method of fabricating a T-gate is provided. The method includes the steps of: forming a photoresist layer on a substrate; patterning the photoresist layer formed on the substrate and forming a first opening; forming a first insulating layer on the photoresist layer and the substrate; removing the first insulating layer and forming a second opening to expose the substrate; forming a second insulating layer on the first insulating layer; removing the second insulating layer and forming a third opening to expose the substrate; forming a metal layer on the second insulating layer on which the photoresist layer and the third opening are formed; and removing the metal layer formed on the photoresist layer. Accordingly, a uniform and elaborate opening defining the length of a gate may be formed by deposition of the insulating layer and a blanket dry etching process, and thus a more elaborate micro T-gate electrode may be fabricated.
摘要翻译：提供一种制造T型栅极的方法。该方法包括以下步骤：在衬底上形成光致抗蚀剂层; 图案化形成在基板上的光致抗蚀剂层并形成第一开口; 在所述光致抗蚀剂层和所述基板上形成第一绝缘层; 去除所述第一绝缘层并形成第二开口以暴露所述衬底; 在所述第一绝缘层上形成第二绝缘层; 去除所述第二绝缘层并形成第三开口以暴露所述衬底; 在其上形成有光致抗蚀剂层和第三开口的第二绝缘层上形成金属层; 并除去形成在光致抗蚀剂层上的金属层。因此，可以通过沉积绝缘层和橡皮干蚀刻工艺来形成限定栅极长度的均匀且精细的开口，因此可以制造更精细的微型T型栅电极。

2. 发明授权

US07468295B2 Method of fabricating T-gate 有权
标题翻译：制造T型门的方法
公开(公告)号：US07468295B2
公开(公告)日：2008-12-23
申请号：US11607417
申请日：2006-12-01
申请人： Jae Yoeb Shim , Hyung Sup Yoon , Dong Min Kang , Ju Yeon Hong , Kyung Ho Lee
发明人： Jae Yoeb Shim , Hyung Sup Yoon , Dong Min Kang , Ju Yeon Hong , Kyung Ho Lee
IPC分类号： H01L21/338
CPC分类号： H01L21/0331 , H01L21/28587
摘要： A method of fabricating a T-gate is provided. The method includes the steps of: forming a photoresist layer on a substrate; patterning the photoresist layer formed on the substrate and forming a first opening; forming a first insulating layer on the photoresist layer and the substrate; removing the first insulating layer and forming a second opening to expose the substrate; forming a second insulating layer on the first insulating layer; removing the second insulating layer and forming a third opening to expose the substrate; forming a metal layer on the second insulating layer on which the photoresist layer and the third opening are formed; and removing the metal layer formed on the photoresist layer. Accordingly, a uniform and elaborate opening defining the length of a gate may be formed by deposition of the insulating layer and a blanket dry etching process, and thus a more elaborate micro T-gate electrode may be fabricated.
摘要翻译：提供一种制造T型栅极的方法。该方法包括以下步骤：在衬底上形成光致抗蚀剂层; 图案化形成在基板上的光致抗蚀剂层并形成第一开口; 在所述光致抗蚀剂层和所述基板上形成第一绝缘层; 去除所述第一绝缘层并形成第二开口以暴露所述衬底; 在所述第一绝缘层上形成第二绝缘层; 去除所述第二绝缘层并形成第三开口以暴露所述衬底; 在其上形成有光致抗蚀剂层和第三开口的第二绝缘层上形成金属层; 并除去形成在光致抗蚀剂层上的金属层。因此，可以通过沉积绝缘层和橡皮干蚀刻工艺来形成限定栅极长度的均匀且精细的开口，因此可以制造更精细的微型T型栅电极。

3. 发明申请

US20070128752A1 Method of fabricating T-gate 有权
标题翻译：制造T型门的方法
公开(公告)号：US20070128752A1
公开(公告)日：2007-06-07
申请号：US11607417
申请日：2006-12-01
申请人： Jae Yoeb Shim , Hyung Sup Yoon , Dong Min Kang , Ju Yeon Hong , Kyung Ho Lee
发明人： Jae Yoeb Shim , Hyung Sup Yoon , Dong Min Kang , Ju Yeon Hong , Kyung Ho Lee
IPC分类号： H01L21/00
CPC分类号： H01L21/0331 , H01L21/28587
摘要： A method of fabricating a T-gate is provided. The method includes the steps of: forming a photoresist layer on a substrate; patterning the photoresist layer formed on the substrate and forming a first opening; forming a first insulating layer on the photoresist layer and the substrate; removing the first insulating layer and forming a second opening to expose the substrate; forming a second insulating layer on the first insulating layer; removing the second insulating layer and forming a third opening to expose the substrate; forming a metal layer on the second insulating layer on which the photoresist layer and the third opening are formed; and removing the metal layer formed on the photoresist layer. Accordingly, a uniform and elaborate opening defining the length of a gate may be formed by deposition of the insulating layer and a blanket dry etching process, and thus a more elaborate micro T-gate electrode may be fabricated.
摘要翻译：提供一种制造T型栅极的方法。该方法包括以下步骤：在衬底上形成光致抗蚀剂层; 图案化形成在基板上的光致抗蚀剂层并形成第一开口; 在所述光致抗蚀剂层和所述基板上形成第一绝缘层; 去除所述第一绝缘层并形成第二开口以暴露所述衬底; 在所述第一绝缘层上形成第二绝缘层; 去除所述第二绝缘层并形成第三开口以暴露所述衬底; 在其上形成有光致抗蚀剂层和第三开口的第二绝缘层上形成金属层; 并除去形成在光致抗蚀剂层上的金属层。因此，可以通过沉积绝缘层和橡皮干蚀刻工艺来形成限定栅极长度的均匀且精细的开口，因此可以制造更精细的微型T型栅电极。

4. 发明申请

US20100142115A1 BURIED CAPACITOR, METHOD OF MANUFACTURING THE SAME, AND METHOD OF CHANGING CAPACITANCE THEREOF 审中-公开
标题翻译：烧结电容器，其制造方法及其电容变化方法
公开(公告)号：US20100142115A1
公开(公告)日：2010-06-10
申请号：US12499762
申请日：2009-07-08
申请人： Hyun-Cheol Bae , Kwang-Seong Choi , Ju Yeon Hong , Jong Tae Moon , Yong il Jun
发明人： Hyun-Cheol Bae , Kwang-Seong Choi , Ju Yeon Hong , Jong Tae Moon , Yong il Jun
IPC分类号： H01G5/00 , H01G7/00 , B32B38/04
CPC分类号： H01G4/30 , H01G4/232 , H01G4/38 , H01G4/40 , H05K1/0206 , H05K1/0306 , H05K1/162 , H05K3/4629 , H05K2201/0187 , H05K2201/09672 , H05K2201/0969 , H05K2203/171 , Y10T29/43 , Y10T156/1056
摘要： Provided are a buried capacitor, a method of manufacturing the same, and a method of changing a capacitance thereof. The buried capacitor includes an upper electrode including at least one first hole, a lower electrode including at least one second hole, and a dielectric interposed between the upper electrode and the lower electrode.
摘要翻译：提供一种埋电容器，其制造方法和改变其电容的方法。掩埋电容器包括上电极，其包括至少一个第一孔，包括至少一个第二孔的下电极和介于上电极和下电极之间的电介质。

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