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    • 2. 发明申请
    • Command input method using motion recognition device
    • 使用运动识别装置的命令输入法
    • US20070124703A1
    • 2007-05-31
    • US11604488
    • 2006-11-27
    • Jong SohnJae SimKee Cho
    • Jong SohnJae SimKee Cho
    • G06F3/00
    • G06F3/0346G06F3/017G06F2200/1637
    • A command input method makes use of a three-dimensional motion recognition device embodied with an inertia system and is particularly directed to extend the total number of inputable commands using initial posture information as well as movement pattern of a motion recognition device. The command input method includes the steps of: determining initial posture at start point when movement of the motion recognition device is generated; determining a pattern of the movement at the end of the movement; and deciding a command from the determined initial posture and the movement pattern. Since the three-dimensional spatial motion can be further differentiated into different commands by the initial posture of the input device, the command input system can be simplified in structure with less number of recognizable motions.
    • 命令输入法利用惯性系统体现的三维运动识别装置,特别涉及使用运动识别装置的初始姿态信息以及运动模式来扩展可输入命令的总数。 命令输入方法包括以下步骤:当生成运动识别装置的移动时,确定起始点处的初始姿势; 确定运动结束时运动的模式; 以及从确定的初始姿势和运动模式确定命令。 由于可以通过输入装置的初始姿态将三维空间运动进一步区分成不同的命令,所以能够以较少的识别运动的结构简化命令输入系统。
    • 4. 发明申请
    • Charge trap memory cell with multi-doped layers, flash memory array using the memory cell and operating method of the same
    • 具有多掺杂层的电荷陷阱存储单元,使用存储单元的闪存阵列及其操作方法
    • US20060171209A1
    • 2006-08-03
    • US11346659
    • 2006-02-03
    • Jae SimByung ParkJong LeeChung Kim
    • Jae SimByung ParkJong LeeChung Kim
    • G11C7/10
    • G11C16/0466G11C16/0483H01L29/66833H01L29/792
    • The present invention discloses a charge trap flash memory cell with multi-doped layers at the active region, a memory array using of the memory cell, and an operating method of the same. The charge trap memory cell structure of the present invention is characterized by forming multi-doped layers at the active region appropriately, and it is a difference from the conventional art. The present invention induces electrons to band-to-band tunnel at the PN junction with the source/drain region by the multi-doped layers, and accelerates the electrons at the reverse bias to generate an avalanche phenomenon. Therefore, the method for operating a memory array of the present invention comprises programming by injecting holes which are generated by the avalanche phenomenon into multi-dielectric layers of each memory cells, and erasing by injecting electrons through an F-N tunneling from channels into the multi-dielectric layers of each memory cells.
    • 本发明公开了一种在有源区域具有多掺杂层的电荷陷阱闪存单元,使用存储单元的存储器阵列及其操作方法。 本发明的电荷陷阱存储单元结构的特征在于在有源区适当地形成多层掺杂层,与现有技术不同。 本发明通过多掺杂层在与源/漏区的PN结处引起电子到带 - 带隧道,并且以反向偏压加速电子以产生雪崩现象。 因此,用于操作本发明的存储器阵列的方法包括通过将由雪崩现象产生的空穴注入到每个存储单元的多个电介质层中来进行编程,以及通过从通道的FN隧道注入电子到多层电介质来擦除, 每个存储单元的电介质层。
    • 5. 发明申请
    • Electro-luminescence display device
    • 电致发光显示装置
    • US20050243034A1
    • 2005-11-03
    • US11020200
    • 2004-12-27
    • Hoon ChungJae Sim
    • Hoon ChungJae Sim
    • H01L51/50G09G3/20G09G3/30G09G3/32G09G3/36H01L27/15H05B33/14
    • G09G3/3225G09G3/20G09G3/3275G09G2310/0297
    • An electro-luminescence display device for reducing the number of output channels of a data driver is disclosed. An electro-luminescence (EL) display device according to the present invention includes an EL display panel having a plurality of pixels; m data electrode lines (wherein m is an integer) and a plurality of scan electrode lines in the EL display panel, the data electrode lines and the scan electrode lines defining the pixels; a data driver having a plurality of output channels for supplying data signals to the m data electrode lines; and a multiplexer for connecting each output channel of the data driver to k data electrode lines (wherein k is an integer greater than 2).
    • 公开了一种用于减少数据驱动器的输出通道数量的电致发光显示装置。 根据本发明的电致发光(EL)显示装置包括具有多个像素的EL显示面板; m个数据电极线(其中m是整数)和EL显示面板中的多条扫描电极线,数据电极线和扫描电极线限定像素; 数据驱动器,具有用于向m个数据电极线提供数据信号的多个输出通道; 以及多路复用器,用于将数据驱动器的每个输出通道连接到k个数据电极线(其中k是大于2的整数)。