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    • 1. 发明申请
    • Method for forming pattern and method for fabricating LCD device using the same
    • 用于形成图案的方法和使用其制造LCD装置的方法
    • US20070148603A1
    • 2007-06-28
    • US11640985
    • 2006-12-19
    • Hye LeeJae Oh
    • Hye LeeJae Oh
    • G03F7/26
    • G03F7/0007G02F1/133512G02F1/133516G03F7/11G03F7/42
    • A method for forming a pattern and a method for fabricating an LCD device using the same is disclosed, wherein a photoresist layer is removed from a substrate without using a photoresist stripper, so that the pattern is formed with a low fabrication costs. The method comprising sequentially forming a pattern material layer, a transformed material layer and a photoresist layer on a substrate; patterning the photoresist layer by exposure and development using a mask; selectively etching the transformed material layer and the pattern material layer by using the patterned photoresist layer as a mask; and removing the transformed material layer and the patterned photoresist layer in a lift-off method by applying light.
    • 公开了一种用于形成图案的方法和使用该图案的LCD器件的制造方法,其中在不使用光致抗蚀剂剥离器的情况下从衬底去除光致抗蚀剂层,从而以低制造成本形成图案。 该方法包括在衬底上依次形成图案材料层,变形材料层和光致抗蚀剂层; 通过使用掩模的曝光和显影来图案化光致抗蚀剂层; 通过使用图案化的光致抗蚀剂层作为掩模来选择性地蚀刻变形材料层和图案材料层; 以及通过施加光而以剥离方法去除转化的材料层和图案化的光致抗蚀剂层。
    • 8. 发明申请
    • Array substrate for liquid crystal display device and manufacturing method thereof
    • 液晶显示装置用阵列基板及其制造方法
    • US20070166859A1
    • 2007-07-19
    • US11646550
    • 2006-12-28
    • Hye LeeJae Oh
    • Hye LeeJae Oh
    • H01L21/00
    • H01L27/124G02F1/136213G02F1/1368H01L27/1214H01L27/1288H01L29/4908
    • An array substrate for an LCD device and a manufacturing method thereof. The array substrate includes: a gate line, a gate electrode, a gate pad, and a pixel electrode formed on the substrate; a gate insulation layer formed on the substrate to expose the gate line and the pixel electrode; a source electrode connected to a data line crossing the gate line, a drain electrode facing the source electrode with a channel interposed, a data pad formed at one end of the data line, and a capacitor electrode overlapping portions of the pixel electrode and the gate line; a semiconductor layer constituting the channel between the source electrode and the drain electrode; first, second, third, and fourth contact holes formed in the gate pad, the data pad, the capacitor electrode, and the drain electrode, respectively; and first through fourth contact electrodes formed in the first through fourth contact holes, respectively.
    • 一种LCD装置用阵列基板及其制造方法。 阵列基板包括:栅极线,栅电极,栅极焊盘和形成在基板上的像素电极; 栅极绝缘层,形成在所述衬底上以暴露所述栅极线和所述像素电极; 连接到与栅极线交叉的数据线的源极电极,与源极电极相对的沟道插入的漏电极,形成在数据线的一端的数据焊盘和电容器电极,重叠部分的像素电极和栅极 线; 构成源电极和漏电极之间的沟道的半导体层; 分别形成在栅极焊盘,数据焊盘,电容器电极和漏极电极中的第一,第二,第三和第四接触孔; 以及形成在第一至第四接触孔中的第一至第四接触电极。
    • 9. 发明申请
    • Liquid crystal display device and method for fabricating the same
    • 液晶显示装置及其制造方法
    • US20070117238A1
    • 2007-05-24
    • US11473141
    • 2006-06-23
    • Jae OhSoopool Kim
    • Jae OhSoopool Kim
    • H01L21/00H01L31/00
    • G02F1/1368G02F2001/136231G02F2001/136295
    • A method for fabricating a liquid crystal display (LCD) device includes: forming a gate line, a gate electrode, and a gate pad electrode on a substrate; sequentially forming a gate insulating layer, a semiconductor layer and a metal layer on an entire surface of the substrate including the gate electrode; forming a first photoresist on the metal layer; patterning the semiconductor layer, a data line, source and drain electrodes, and a data pad electrode by selectively etching the gate insulating layer, the semiconductor layer, and the metal layer using the first photoresist as a mask; forming a second photoresist to cover the gate pad electrode; forming a passivation layer on an entire surface of the substrate including the first and second photoresists; removing the passivation layer on the first and second photoresists by lift-stripping the first and second photoresists; and forming a pixel electrode electrically connected to the drain electrode.
    • 一种制造液晶显示器(LCD)器件的方法,包括:在衬底上形成栅极线,栅极电极和栅极焊盘电极; 在包括栅电极的基板的整个表面上依次形成栅极绝缘层,半导体层和金属层; 在所述金属层上形成第一光致抗蚀剂; 通过使用第一光致抗蚀剂作为掩模选择性地蚀刻栅极绝缘层,半导体层和金属层来图案化半导体层,数据线,源极和漏极以及数据焊盘电极; 形成第二光致抗蚀剂以覆盖所述栅极焊盘电极; 在包括第一和第二光致抗蚀剂的基板的整个表面上形成钝化层; 通过剥离第一和第二光致抗蚀剂来去除第一和第二光致抗蚀剂上的钝化层; 以及形成与漏电极电连接的像素电极。
    • 10. 发明申请
    • Method for manufacturing transistor in semiconductor device
    • 在半导体器件中制造晶体管的方法
    • US20060211185A1
    • 2006-09-21
    • US11154458
    • 2005-06-16
    • Yong KimSe JangJae Oh
    • Yong KimSe JangJae Oh
    • H01L21/84H01L21/00
    • H01L21/823437H01L21/823412H01L21/823425H01L29/66537H01L29/6659H01L29/66621H01L29/7834
    • Disclosed herein is a method for manufacturing a transistor in a semiconductor device, which can improve the refresh characteristics of the device. The method comprises the steps of: providing a silicon substrate having active and field regions defined thereon; performing a first channel ion implantation process into the silicon substrate; sequentially forming a hard mask film and a photoresist pattern exposing a gate formation region on the substrate into which the first channel ion implantation process has been performed; performing a second channel ion implantation process into the substrate at a higher concentration than that of the first ion implantation process using the photoresist pattern as an ion implantation mask, so as to form doped regions in the substrate at the gate formation region and both sides adjacent thereto; etching a hard mask film using the photoresist pattern as an etch barrier; removing the photoresist pattern; etching the substrate using a portion of the hard mask film remaining after the etching as an etch barrier, so as to form a groove; removing the hard mask film remaining after the etching; forming a gate in the groove of the substrate from which the hard mask film has been removed; and forming source and drain regions on the substrate at both sides of the gate.
    • 这里公开了一种用于制造半导体器件中的晶体管的方法,其可以提高器件的刷新特性。 该方法包括以下步骤:提供其上限定有活性和场区的硅衬底; 对硅衬底进行第一沟道离子注入工艺; 顺序地形成硬掩模膜和曝光已经进行了第一沟道离子注入工艺的衬底上的栅极形成区的光致抗蚀剂图案; 以比使用光致抗蚀剂图案作为离子注入掩模的第一离子注入工艺更高的浓度进行衬底中的第二沟道离子注入工艺,以便在栅极形成区域和两侧相邻的衬底中形成掺杂区域 到; 使用光致抗蚀剂图案蚀刻硬掩模膜作为蚀刻阻挡层; 去除光致抗蚀剂图案; 使用蚀刻后残留的硬掩模膜的一部分作为蚀刻阻挡层蚀刻基板,以形成凹槽; 去除蚀刻后残留的硬掩模膜; 在已经去除了硬掩模膜的基板的凹槽中形成栅极; 以及在栅极两侧的衬底上形成源区和漏区。