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    • 2. 发明授权
    • Liquid crystal display device
    • 液晶显示装置
    • US08253916B2
    • 2012-08-28
    • US11400422
    • 2006-04-07
    • Seung Ryull ParkJoon Dong Lee
    • Seung Ryull ParkJoon Dong Lee
    • G02F1/1339G02F1/136G02F1/1333
    • G02F1/13394G02F1/133512G02F1/136227H01L27/1214H01L27/13
    • An LCD device according to the present invention includes having first and second substrates facing each other gate and data lines crossing each other to define a pixel region, a thin film transistor including a gate electrode protruding from the gate line, a source electrode protruding from the data line and a drain electrode spaced from the source electrode at a predetermined interval, a metal pattern over a predetermined portion of the gate line, a passivation layer over the data line and the metal pattern to have a contact hole exposing the drain electrode and a storage hole exposing the metal pattern, a pixel electrode on the pixel region over the contact hole and the storage hole, a column spacer contacting with the pixel electrode through the storage hole and a liquid crystal layer between the first and second substrates.
    • 根据本发明的LCD装置包括具有彼此面对的第一和第二基板以及彼此交叉以限定像素区域的数据线,包括从栅极线突出的栅电极的薄膜晶体管, 数据线和漏电极,以预定间隔与源电极间隔开,在栅极线的预定部分上方的金属图案,数据线上的钝化层和金属图案,以具有暴露漏电极的接触孔和 露出金属图案的存储孔,接触孔上的像素区域上的像素电极和存储孔,通过存储孔与像素电极接触的柱间隔件和在第一和第二基板之间的液晶层。
    • 4. 发明申请
    • Liquid crystal display device with high aperture ratio
    • 具有高开口率的液晶显示装置
    • US20090185092A1
    • 2009-07-23
    • US12382421
    • 2009-03-16
    • Seung Ryull ParkDong Guk Kim
    • Seung Ryull ParkDong Guk Kim
    • G02F1/1343
    • G02F1/134363G02F1/136213
    • Disclosed is an in-plane switching (IPS) mode liquid crystal display (LCD) device having an increased aperture ratio by overlapping a storage capacitor on a lower end of an electrode. The (IPS) mode liquid crystal display device (LCD) device includes first and second substrates; a gate line and a data line arranged horizontally and vertically to define a plurality of pixel regions on the first substrate; a switching device, having a gate electrode, a semiconductor layer and source and drain electrodes, at a crossing of the gate line and the data line; a passivation film on an entire surface of the first substrate including the switching device; a common electrode and a pixel electrode alternately disposed at an upper portion of the passivation film and generating an in-plane electric field, wherein at least one of the common and pixel electrodes has a first storage capacitor at its lower end; and a liquid crystal layer between the first and second substrates.
    • 公开了一种通过在电极的下端重叠存储电容器而具有增加的孔径比的平面内切换(IPS)模式液晶显示(LCD)装置。 (IPS)模式液晶显示装置(LCD)装置包括第一和第二基板; 水平和垂直布置的栅极线和数据线,以在第一基板上限定多个像素区域; 开关器件,在栅极线和数据线的交叉处具有栅极电极,半导体层以及源极和漏极电极; 在包括所述开关装置的所述第一基板的整个表面上的钝化膜; 公共电极和像素电极交替地设置在钝化膜的上部并产生面内电场,其中至少一个公共电极和像素电极在其下端具有第一存储电容器; 以及在第一和第二基板之间的液晶层。
    • 5. 发明授权
    • Liquid crystal display device with high aperture ratio having a metal layer and a storage electrode entirely overlapped with a common electrode
    • 具有高开口率的液晶显示装置具有金属层和与公共电极完全重叠的存储电极
    • US07515237B2
    • 2009-04-07
    • US11166094
    • 2005-06-27
    • Seung Ryull ParkDong Guk Kim
    • Seung Ryull ParkDong Guk Kim
    • G02F1/1343
    • G02F1/134363G02F1/136213
    • Disclosed is an in-plane switching (IPS) mode liquid crystal display (LCD) device having an increased aperture ratio by overlapping a storage capacitor on a lower end of an electrode. The (IPS) mode liquid crystal display device (LCD) device includes first and second substrates; a gate line and a data line arranged horizontally and vertically to define a plurality of pixel regions on the first substrate; a switching device, having a gate electrode, a semiconductor layer and source and drain electrodes, at a crossing of the gate line and the data line; a passivation film on an entire surface of the first substrate including the switching device; a common electrode and a pixel electrode alternately disposed at an upper portion of the passivation film and generating an in-plane electric field, wherein at least one of the common and pixel electrodes has a first storage capacitor at its lower end; and a liquid crystal layer between the first and second substrates.
    • 公开了一种通过在电极的下端重叠存储电容器而具有增加的孔径比的平面内切换(IPS)模式液晶显示(LCD)装置。 (IPS)模式液晶显示装置(LCD)装置包括第一和第二基板; 水平和垂直布置的栅极线和数据线,以在第一基板上限定多个像素区域; 开关器件,在栅极线和数据线的交叉处具有栅极电极,半导体层以及源极和漏极电极; 在包括所述开关装置的所述第一基板的整个表面上的钝化膜; 公共电极和像素电极交替地设置在钝化膜的上部并产生面内电场,其中至少一个公共电极和像素电极在其下端具有第一存储电容器; 以及在第一和第二基板之间的液晶层。
    • 8. 发明授权
    • Array substrate having COT structure for use in liquid crystal display device and method of fabricating the same
    • 具有用于液晶显示装置的COT结构的阵列基板及其制造方法
    • US07394510B2
    • 2008-07-01
    • US10874339
    • 2004-06-24
    • Chang-Ho OhWoong Kwon KimSeung Ryull Park
    • Chang-Ho OhWoong Kwon KimSeung Ryull Park
    • G02F1/1335
    • G02F1/134336G02F1/136213G02F2001/136222
    • An array substrate device has a color filter-on-thin film transistor (COT) structure for use in a liquid crystal display device. The array substrate device includes a gate line disposed in a first direction on a substrate; a data line disposed over the substrate in a second direction, the data line perpendicularly crossing the gate line to define a pixel region; a thin film transistor near a crossing of the gate and data lines, the thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode; a capacitor electrode overlapping the gate line; a color filter having an island pattern corresponding to the pixel region, the color filter exposing portions of the drain electrode and the capacitor electrode; and a pixel electrode disposed over the cover filter, corresponding to the pixel region, and contacting the portions of the drain electrode and the capacitor electrode.
    • 阵列基板装置具有用于液晶显示装置的彩色滤光器薄膜晶体管(COT)结构。 阵列基板装置包括在基板上沿第一方向设置的栅极线; 数据线,沿着第二方向设置在所述衬底上方,所述数据线垂直于所述栅极线交叉以限定像素区域; 在栅极和数据线的交叉点附近的薄膜晶体管,所述薄膜晶体管包括栅电极,半导体层,源电极和漏电极; 与栅极线重叠的电容器电极; 具有对应于像素区域的岛状图案的滤色器,漏电极和电容器电极的滤色器曝光部分; 以及像素电极,设置在覆盖滤波器上,对应于像素区域,并且与漏电极和电容器电极的部分接触。
    • 9. 发明授权
    • Method for fabricating liquid crystal display device of color-filter on transistor type
    • 晶体管式彩色滤光片液晶显示装置的制造方法
    • US07354784B2
    • 2008-04-08
    • US11172233
    • 2005-06-29
    • Seung Ryull ParkSang Hee Yu
    • Seung Ryull ParkSang Hee Yu
    • H01L21/00
    • G02F1/133516G02F1/136227G02F1/1368G02F2001/133565G02F2001/133567G02F2201/124H01L27/14621
    • A method for fabricating a color-filter on transistor (COT) type LCD device, to improve the yield by simplifying the fabrication process with diffraction exposure, which includes the steps of forming a gate line, a gate electrode, a gate pad and a data pad on a substrate; depositing a gate insulating layer and an active layer; forming a data line intersecting the gate line to define a unit pixel region, source and drain electrode on the active layer, and first and second connection conductive layers forming an insulating interlayer on the remaining portions except the first and second connection conductive layers and the drain electrode; forming a color filter layer and a black matrix layer on the insulating interlayer; forming an overcoat layer on the remaining portions of the color filter layer except the first and second connection conductive layers and the drain electrode.
    • 一种用于在晶体管(COT)型LCD器件上制造滤色器的方法,通过简化衍射曝光的制造工艺来提高产量,其包括形成栅极线,栅电极,栅极焊盘和数据的步骤 衬垫在衬底上; 沉积栅极绝缘层和有源层; 形成与栅极线相交的数据线,以限定有源层上的单位像素区域,源极和漏极,以及在除了第一和第二连接导电层和漏极之外的其余部分上形成绝缘中间层的第一和第二连接导电层 电极; 在绝缘中间层上形成滤色器层和黑矩阵层; 在除了第一和第二连接导电层和漏电极之外的滤色器层的剩余部分上形成覆盖层。
    • 10. 发明授权
    • Method of fabricating liquid crystal display device
    • 制造液晶显示装置的方法
    • US08426229B2
    • 2013-04-23
    • US12849489
    • 2010-08-03
    • Seung Ryull ParkKyung Mo Son
    • Seung Ryull ParkKyung Mo Son
    • H01L21/00
    • G02F1/13458G02F1/134363H01L27/124H01L27/1288
    • Disclosed is a method of fabricating a LCD device that includes forming sacrifice layer patterns in a pixel region while forming a gate line, a first storage electrode, and a gate pad on a substrate; sequentially forming a gate insulation film, an amorphous silicon film, an impurity-doped amorphous silicon film, and a source/drain metal film on a substrate, forming a transparent conductive material on the substrate covered with a protection and then patterning the transparent conductive material to form a second storage electrode overlapping the first storage electrode and an electrode pattern having a part overlapping an area of one side edge of the sacrifice layer patterns and the other part formed on the substrate; and simultaneously forming a common electrode and a pixel electrode in the pixel region by performing a lift-off process to remove the sacrifice layer patterns on the substrate where the electrode pattern is formed.
    • 公开了一种制造LCD器件的方法,其包括在形成栅极线的同时形成像素区域中的牺牲层图案,在衬底上形成第一存储电极和栅极焊盘; 在衬底上依次形成栅极绝缘膜,非晶硅膜,杂质掺杂非晶硅膜和源极/漏极金属膜,在被覆盖的衬底上形成透明导电材料,然后对透明导电材料 以形成与第一存储电极重叠的第二存储电极和具有与牺牲层图案的一个侧边缘的区域重叠的部分和形成在基板上的另一部分重叠的部分的电极图案; 并且通过执行剥离处理来同时形成像素区域中的公共电极和像素电极,以去除形成电极图案的基板上的牺牲层图案。