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    • 6. 发明申请
    • METHOD OF FABRICATING FLASH MEMORY DEVICE USING SIDEWALL PROCESS
    • 使用边框工艺制作闪存存储器件的方法
    • US20070243681A1
    • 2007-10-18
    • US11766758
    • 2007-06-21
    • Jae Kim
    • Jae Kim
    • H01L21/336
    • H01L27/11521H01L27/115
    • A method of fabricating a flash memory device includes depositing and etching an insulating layer on a substrate having STI structures, depositing a first polysilicon layer over the insulating layer and the substrate, etching the first polysilicon layer to form floating gates and removing the insulating layer. The method also includes forming a first photoresist pattern, performing a first ion implantation using the first photoresist pattern to form first source/drain regions in the substrate and adjacent to the floating gate, removing the first photoresist pattern, depositing an ONO layer on the resulting structure, depositing a second polysilicon layer over the ONO layer, and etching the second polysilicon layer to form a control gate and at least one select gate. The method concludes by forming a second photoresist pattern and performing a second ion implantation using the second photoresist pattern to form second source/drain regions in the substrate and adjacent to the select gate.
    • 一种制造闪速存储器件的方法包括在具有STI结构的衬底上沉积和蚀刻绝缘层,在绝缘层和衬底上沉积第一多晶硅层,蚀刻第一多晶硅层以形成浮动栅极并去除绝缘层。 该方法还包括形成第一光致抗蚀剂图案,使用第一光致抗蚀剂图案进行第一离子注入,以在衬底中形成第一源极/漏极区域并与浮置栅极相邻,去除第一光致抗蚀剂图案,在所得到的光刻胶图案上沉积ONO层 在所述ONO层上沉积第二多晶硅层,以及蚀刻所述第二多晶硅层以形成控制栅极和至少一个选择栅极。 该方法通过形成第二光致抗蚀剂图案并且使用第二光致抗蚀剂图案执行第二离子注入来形成第二源极/漏极区域并且邻近选择栅极。
    • 10. 发明申请
    • DETECTION OF SEED LAYERS ON A SEMICONDUCTOR DEVICE
    • 在半导体器件上检测种子层
    • US20070087530A1
    • 2007-04-19
    • US11548453
    • 2006-10-11
    • Ji Young YimJae Kim
    • Ji Young YimJae Kim
    • H01L21/30H01L21/46
    • H01L21/76871
    • A device and/or method which detects a seed layer and a device and/or method of forming layers on a semiconductor device. The device which forms layers on the semiconductor device may include a metal layer forming unit (which forms a metal layer on a wafer), a copper seed layer forming unit (which forms a copper seed layer on the metal layer), a wafer alignment device (which includes a wafer alignment unit which aligns the wafer to a predetermined position), a copper seed layer detecting unit (which is positioned above the wafer alignment unit to detect the copper seed layer formed on the wafer), and a plating unit (which forms a copper interconnection layer on the copper seed layer).
    • 一种检测种子层的装置和/或方法,以及在半导体器件上形成层的器件和/或方法。 在半导体器件上形成层的器件可以包括金属层形成单元(其在晶片上形成金属层),铜籽晶层形成单元(在金属层上形成铜籽晶层),晶片对准装置 (其包括将晶片对准到预定位置的晶片对准单元),铜籽晶层检测单元(位于晶片对准单元上方以检测形成在晶片上的铜籽晶层),以及电镀单元(其 在铜籽晶层上形成铜互连层)。