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1. 发明申请

US20130135273A1 LIQUID CRYSTAL DISPLAY 有权
标题翻译：液晶显示器
公开(公告)号：US20130135273A1
公开(公告)日：2013-05-30
申请号：US13460566
申请日：2012-04-30
申请人： Whee-Won LEE , Jae Hoon LEE , Young-Su KIM
发明人： Whee-Won LEE , Jae Hoon LEE , Young-Su KIM
IPC分类号： G09G5/00 , G09G3/36
CPC分类号： G09G3/3688 , G09G3/3614 , G09G2300/0426 , G09G2320/041
摘要： A liquid crystal display, including: pixels; a signal controller receiving an input image signal and an input control signal and outputting a processing image signal and a control signal; and a data driver changing the processing image signal to data voltage on the basis of the control signal to supply the data voltage to the pixel and sharing charges of odd channel data voltage of an odd channel and even channel data voltage of an even channel which have different polarities on the basis of a temperature.
摘要翻译：液晶显示器，包括：像素; 信号控制器，接收输入图像信号和输入控制信号，并输出处理图像信号和控制信号; 数据驱动器基于控制信号将处理图像信号改变为数据电压，以将数据电压提供给像素，并且分配奇数通道的奇数通道数据电压和偶数通道的偶数通道数据电压的电荷，基于温度的不同极性。

2. 发明申请

US20130027378A1 DISPLAY PANEL AND INTEGRATED DRIVING APPARATUS THEREON 有权
标题翻译：显示面板和集成驱动装置
公开(公告)号：US20130027378A1
公开(公告)日：2013-01-31
申请号：US13331360
申请日：2011-12-20
申请人： Jae Hoon LEE , Whee-Won LEE
发明人： Jae Hoon LEE , Whee-Won LEE
IPC分类号： G09G5/00
CPC分类号： G11C19/28 , G09G3/3677 , G09G2310/0286
摘要： A display panel includes: gate and data lines; pixels connected to the gate and data lines; and a stage includes: a pull-up driver including an output terminal of the stage and which outputs a gate-on voltage, an output pull-down unit which pulls down an output terminal of the stage, a reset unit which changes a voltage of a second node into a low voltage based on a voltage of the output terminal of the stage, a first node pull-up unit which changes a first node into a high voltage based on a gate-on voltage from a previous stage, a first node pull-down unit which changes the first node into the low voltage based on the gate-on voltage from a subsequent stage, and a first node reset unit which changes the voltage of the first node into the low voltage based on the voltage of the second node.
摘要翻译：显示面板包括：门和数据线; 连接到门和数据线的像素; 并且载台包括：上拉驱动器，其包括所述载波台的输出端子，并输出栅极导通电压;输出下拉单元，其拉低所述载波台的输出端子;复位单元，基于所述级的输出端子的电压的第二节点变为低电压;第一节点上拉单元，其基于来自前一级的栅极导通电压将第一节点改变为高电压;第一节点下拉单元，其基于来自后续级的栅极导通电压将第一节点改变为低电压;以及第一节点复位单元，其基于第二节点的电压将第一节点的电压改变为低电压节点。

3. 发明申请

US20120307174A1 DISPLAY DEVICE AND DRIVING METHOD THEREOF 有权
标题翻译：显示装置及其驱动方法
公开(公告)号：US20120307174A1
公开(公告)日：2012-12-06
申请号：US13357780
申请日：2012-01-25
申请人： Jae Hoon LEE , Whee-Won LEE , Duc-Han CHO
发明人： Jae Hoon LEE , Whee-Won LEE , Duc-Han CHO
IPC分类号： G02F1/1333
CPC分类号： G09G3/2003 , G09G3/3614 , G09G3/3677 , G09G2230/00 , G09G2300/0426 , G09G2310/0235 , G09G2310/0267 , G09G2310/0281 , G09G2320/0242
摘要： Disclosed are a display device and a driving method thereof. The display device includes: a display panel including a plurality of pixels, a plurality of gate lines, and a plurality of data lines; a first gate driver and a second gate driver which each transmit a gate signal to the gate lines and are at edge regions of the display panel; and a data driver which transmit data voltages to the data lines. The pixels include a plurality of first color pixels which display a first color and are connected to the first gate driver, a plurality of second color pixels which display a second color and are connected to the second gate driver, and a plurality of third color pixels which display a third color and comprise at least a pixel connected to the first gate driver and at least a pixel connected to the second gate driver.
摘要翻译：公开了一种显示装置及其驱动方法。显示装置包括：显示面板，包括多个像素，多个栅极线和多个数据线; 第一栅极驱动器和第二栅极驱动器，其将栅极信号发送到栅极线并且处于显示面板的边缘区域; 以及向数据线传输数据电压的数据驱动器。像素包括显示第一颜色并连接到第一栅极驱动器的多个第一彩色像素，显示第二颜色并连接到第二栅极驱动器的多个第二彩色像素，以及多个第三颜色像素其显示第三颜色并且包括至少连接到第一栅极驱动器的像素和连接到第二栅极驱动器的至少一个像素。

4. 发明申请

US20130082996A1 DISPLAY DEVICE AND DRIVING METHOD THEREOF 有权
标题翻译：显示装置及其驱动方法
公开(公告)号：US20130082996A1
公开(公告)日：2013-04-04
申请号：US13368941
申请日：2012-02-08
申请人： Young-Su KIM , Jae Hoon LEE , Duc-Han CHO
发明人： Young-Su KIM , Jae Hoon LEE , Duc-Han CHO
IPC分类号： G09G3/36 , G06F3/038
CPC分类号： G09G3/3677
摘要： A driving apparatus for a display device includes: a signal controller that generates a pre-clock signal, a charge sharing control signal and a scanning start signal; a clock signal generator that generates a clock signal swinging between a first voltage and a second voltage based on the pre-clock signal and the charge sharing control signal; and a gate driver that generates gate signals based on the scanning start signal and the clock signal, where the clock signal generator includes: a voltage generator that generates a third voltage; and a clock generator that receives one of the first to third voltages in response to the pre-clock signal and the charge sharing control signal, and outputs an output signal based on the one of the first to third voltages as the clock signal, where the third voltage is lower than the first voltage and higher than the second voltage.
摘要翻译：一种用于显示装置的驱动装置，包括：产生前时钟信号，电荷共享控制信号和扫描开始信号的信号控制器; 时钟信号发生器，其基于前时钟信号和电荷共享控制信号产生在第一电压和第二电压之间摆动的时钟信号; 以及栅极驱动器，其基于所述扫描开始信号和所述时钟信号生成栅极信号，其中所述时钟信号发生器包括：产生第三电压的电压发生器; 以及时钟发生器，其响应于前时钟信号和电荷共享控制信号接收第一至第三电压中的一个，并且基于第一至第三电压中的一个输出输出信号作为时钟信号，其中第三电压低于第一电压并高于第二电压。

5. 发明申请

US20130015463A1 NITRIDE-BASED SEMICONDUCTOR DEVICE HAVING EXCELLENT STABILITY 审中-公开
标题翻译：具有极好稳定性的基于氮化物的半导体器件
公开(公告)号：US20130015463A1
公开(公告)日：2013-01-17
申请号：US13528517
申请日：2012-06-20
申请人： Jae Hoon LEE
发明人： Jae Hoon LEE
IPC分类号： H01L29/205
CPC分类号： H01L29/872 , H01L27/0605 , H01L29/1075 , H01L29/1079 , H01L29/1608 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H01L33/007 , H01L33/12 , H01L33/32
摘要： A nitride-based semiconductor device is provided. The nitride-based semiconductor device may include an aluminum silicon carbide (AlSixC1-x) pre-treated layer, and thus may ease a stress in a nitride semiconductor layer caused by a difference in properties, for example, a lattice constant and a coefficient of expansion, between the substrate and the nitride semiconductor layer formed on the substrate. Accordingly, an incidence of cracks created in the nitride semiconductor layer may be minimized and a surface roughness of the nitride semiconductor layer may be improved and thus, stability and performance of the nitride-based semiconductor device may be improved. The nitride-based semiconductor device may include a grade AlGaN layer of which an aluminum (Al) content gradually decreases from the substrate and thus, an incidence of cracks created in the nitride semiconductor layer may be minimized and the nitride semiconductor layer having a stable structure may be formed.
摘要翻译：提供了一种氮化物基半导体器件。氮化物基半导体器件可以包括铝碳化硅（AlSixC1-x）预处理层，并且因此可以减轻由于特性差异引起的氮化物半导体层中的应力，例如晶格常数和系数在衬底和形成在衬底上的氮化物半导体层之间的扩展。因此，可以使在氮化物半导体层中产生的裂纹的发生率最小化，并且可以提高氮化物半导体层的表面粗糙度，从而可以提高氮化物类半导体器件的稳定性和性能。氮化物基半导体器件可以包括其中铝（Al）含量从衬底逐渐减小的等级AlGaN层，因此可以最小化在氮化物半导体层中产生的裂纹的入射，并且具有稳定结构的氮化物半导体层可能形成。

6. 发明申请

US20120280233A1 NITRIDE-BASED HETEROSTRUCTURE FIELD EFFECT TRANSISTOR HAVING HIGH EFFICIENCY 有权
标题翻译：基于氮化物结构的高效率场效应晶体管
公开(公告)号：US20120280233A1
公开(公告)日：2012-11-08
申请号：US13226108
申请日：2011-09-06
申请人： Jae Hoon LEE , Ki Se Kim
发明人： Jae Hoon LEE , Ki Se Kim
IPC分类号： H01L29/165
CPC分类号： H01L29/7787 , H01L29/1608 , H01L29/2003 , H01L29/872
摘要： A high efficiency heterostructure field effect transistor (HFET) capable of suppressing a leakage current and enhancing a current density by lowering a barrier between an electrode and a semiconductor layer is provided. The high efficiency HFET may include a substrate, a semi-insulating gallium nitride (GaN) layer formed on the substrate, an aluminum gallium nitride (AlGaN) layer formed on the GaN layer, and a silicon carbide (SixC1-x) functional layer formed on the AlGaN layer.
摘要翻译：提供了能够通过降低电极和半导体层之间的阻挡层来抑制漏电流并提高电流密度的高效异质结构场效应晶体管（HFET）。高效HFET可以包括基板，形成在基板上的半绝缘氮化镓（GaN）层，形成在GaN层上的氮化镓铝（AlGaN）层，以及形成的碳化硅（SixC1-x）功能层在AlGaN层上。

7. 发明申请

US20130032821A1 SCHOTTKY BARRIER DIODE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：肖特彼勒二极管及其制造方法
公开(公告)号：US20130032821A1
公开(公告)日：2013-02-07
申请号：US13351967
申请日：2012-01-17
申请人： Jae Hoon LEE
发明人： Jae Hoon LEE
IPC分类号： H01L29/872 , H01L21/329 , H01L29/205
CPC分类号： H01L29/872 , H01L29/1608 , H01L29/2003 , H01L29/66143 , H01L29/8611
摘要： A Schottky barrier diode (SBD) is provided, which improves electrical characteristics and optical characteristics by securing high crystallinity by including an n-gallium nitride (GaN) layer and a GaN layer which are doped with aluminum (Al). In addition, by providing a p-GaN layer on the Al-doped GaN layer, a depletion layer may be formed when a reverse current is applied, thereby reducing a leakage current. The SBD may be manufactured by etching a part of the Al-doped GaN layer and growing a p-GaN layer from the etched part of the Al-doped GaN layer. Therefore, a thin film crystal is not damaged, thereby increasing reliability. Also, since dedicated processes for ion implantation and thermal processing are not necessary, simplified process and reduced cost may be achieved.
摘要翻译：提供肖特基势垒二极管（SBD），其通过包括掺杂有铝（Al）的氮化镓（GaN）层和GaN层来确保高结晶度而改善电特性和光学特性。此外，通过在Al掺杂的GaN层上设置p-GaN层，当施加反向电流时可以形成耗尽层，从而减少漏电流。可以通过蚀刻Al掺杂的GaN层的一部分并且从Al掺杂的GaN层的蚀刻部分生长p-GaN层来制造SBD。因此，薄膜晶体不被损坏，从而增加可靠性。此外，由于不需要用于离子注入和热处理的专用工艺，可以实现简化的工艺和降低的成本。

8. 发明申请

US20130017657A1 METHOD OF MANUFACTURING POWER DEVICE 有权
标题翻译：制造电源装置的方法
公开(公告)号：US20130017657A1
公开(公告)日：2013-01-17
申请号：US13543553
申请日：2012-07-06
申请人： Jae Hoon LEE
发明人： Jae Hoon LEE
IPC分类号： H01L21/336
CPC分类号： H01L21/28264 , H01L21/0237 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/02639 , H01L29/517 , H01L29/66522 , H01L29/78
摘要： A power device manufacturing method is provided. The power device manufacturing method may perform patterning of regions on which a source electrode and a drain electrode are to be formed, may regrow n+-gallium nitride (GaN) and p+-GaN in the patterned regions and thus, a thin film crystal may not be damaged. Also, a doping concentration of n+-GaN or p+-GaN may be adjusted, an ohmic resistance in the source electrode region and the drain electrode region may decrease, and a current density may increase. The power device manufacturing method may regrow n+-GaN and p+-GaN at a high temperature after an n-GaN layer and a p-GaN layer are patterned. Accordingly, a thin film crystal may not be damaged and thus, a reliability may be secured, and an annealing process may not be additionally performed and thus, a process may be simplified and a cost may be reduced.
摘要翻译：提供了一种功率器件制造方法。功率器件制造方法可以对要形成源电极和漏电极的区域进行图案化，可以在图案化区域中重新生长n + - 氮化镓（GaN）和p + -GaN，因此薄膜晶体可能不会被损坏此外，可以调节n + -GaN或p + -GaN的掺杂浓度，源电极区域和漏电极区域中的欧姆电阻可能降低，并且电流密度可能增加。在n-GaN层和p-GaN层被图案化之后，功率器件制造方法可以在高温下再生n + -GaN和p + -GaN。因此，薄膜晶体可能不会被损坏，因此可以确保可靠性，并且可以不额外地执行退火处理，因此可以简化处理并且可以降低成本。

9. 发明申请

US20120274770A1 VEHICLE IMAGE RECORDING SYSTEM 审中-公开
标题翻译：车辆图像记录系统
公开(公告)号：US20120274770A1
公开(公告)日：2012-11-01
申请号：US13458306
申请日：2012-04-27
申请人： Jae Hoon LEE
发明人： Jae Hoon LEE
IPC分类号： H04N7/18
CPC分类号： G07C5/0866
摘要： There is provided a vehicle image recording system including: a vehicle having a receiving space provided therein; a camera installed in the receiving space; a reflective device installed on a window of the vehicle or a ceiling of the vehicle to reflect image information captured from the front or the rear of the vehicle, to the camera; and a fixing member fixing the reflective device to the window or the ceiling.
摘要翻译：提供一种车辆图像记录系统，包括：具有设置在其中的接收空间的车辆; 摄像机安装在接收空间中; 安装在车辆的窗户或车辆的天花板上的反射装置，以将从车辆的前部或后部捕获的图像信息反射到照相机; 以及将反射装置固定到窗户或天花板上的固定构件。

10. 发明申请

US20120274769A1 IMAGE RECORDING SYSTEM FOR VEHICLE AND REFLECTION UNIT 有权
标题翻译：车辆和反射单元的图像记录系统
公开(公告)号：US20120274769A1
公开(公告)日：2012-11-01
申请号：US13437515
申请日：2012-04-02
申请人： Jae Hoon LEE
发明人： Jae Hoon LEE
IPC分类号： H04N7/18
CPC分类号： G07C5/0866 , B60R1/08
摘要： There are provided an image recording system for a vehicle and a reflection unit thereof. The image recording system includes a vehicle in which a storage space is provided, a camera that is installed in the storage space, and a reflection unit that is installed on a window or a ceiling of the vehicle to reflect image information from a forward or rearward direction of the vehicle into the camera.
摘要翻译：提供了一种用于车辆的图像记录系统及其反射单元。图像记录系统包括其中设置有存储空间的车辆，安装在存储空间中的照相机，以及安装在车辆的窗户或天花板上以从前方或后方反射图像信息的反射单元车辆的方向进入相机。

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