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1. 发明授权

US08421610B2 Touch screen and method of operating the same 有权
标题翻译：触摸屏及其操作方法
公开(公告)号：US08421610B2
公开(公告)日：2013-04-16
申请号：US12534672
申请日：2009-08-03
申请人： Seongdeok Ahn , In-Kyu You , Jiyoung Oh , Chul Am Kim , Jae Bon Koo , Sang Seok Lee , Kyung Soo Suh , Kyoung Ik Cho
发明人： Seongdeok Ahn , In-Kyu You , Jiyoung Oh , Chul Am Kim , Jae Bon Koo , Sang Seok Lee , Kyung Soo Suh , Kyoung Ik Cho
IPC分类号： G08B6/00
CPC分类号： G06F3/044 , G06F3/016 , G06F3/045
摘要： Provided are a touch screen and a method of operating the same. The touch screen includes a detecting part, a control part, and a tactile feedback part. The detecting part detects object's approach or contact. The control part receives a signal of the detecting part to output a feedback signal. The tactile feedback part receives the feedback signal of the control part to provide a tactile feedback to a contact position using a magnetic force. The tactile feedback uses the magnetic force of a magnetic dipole.
摘要翻译：提供一种触摸屏及其操作方法。触摸屏包括检测部分，控制部分和触觉反馈部分。检测部件检测物体的接近或接触。控制部分接收检测部分的信号以输出反馈信号。触觉反馈部分接收控制部分的反馈信号，以使用磁力向接触位置提供触觉反馈。触觉反馈使用磁偶极子的磁力。

2. 发明申请

US20100140706A1 METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR SUBSTRATE 有权
标题翻译：制造薄膜晶体管和薄膜晶体管基板的方法
公开(公告)号：US20100140706A1
公开(公告)日：2010-06-10
申请号：US12507725
申请日：2009-07-22
申请人： Jae Bon KOO , In-Kyu You , Seongdeok Ahn , Kyoung Ik Cho
发明人： Jae Bon KOO , In-Kyu You , Seongdeok Ahn , Kyoung Ik Cho
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78603 , H01L27/1266 , H01L29/66757 , H01L29/78618
摘要： Provided is a method of manufacturing a thin film transistor that can improve self-alignment. In this method, a semiconductor layer comprising a first doped region, a second doped region and a channel region is formed on a sacrificial layer on a first substrate. Next, the semiconductor layer is separated from the first substrate and is then coupled on a second substrate. Next, a dielectric layer is formed on the second substrate and the semiconductor layer, and a first photoresist layer is formed on the dielectric layer. Thereafter, the first photoresist layer is exposed to light from a rear surface of the second substrate by using the first doped region and the second doped region as a mask, to form a first mask pattern. Next, a gate electrode overlapping the channel region is formed on the dielectric layer by using the first mask pattern as a mask, and a source electrode and a drain electrode connected to the first doped region and the second doped region, respectively are formed to complete a thin film transistor.
摘要翻译：提供了一种可以改善自对准的薄膜晶体管的制造方法。在该方法中，在第一衬底上的牺牲层上形成包括第一掺杂区域，第二掺杂区域和沟道区域的半导体层。接下来，半导体层与第一衬底分离，然后耦合在第二衬底上。接下来，在第二基板和半导体层上形成电介质层，在电介质层上形成第一光致抗蚀剂层。此后，通过使用第一掺杂区域和第二掺杂区域作为掩模，将第一光致抗蚀剂层从第二基板的后表面曝光，以形成第一掩模图案。接下来，通过使用第一掩模图案作为掩模在介电层上形成与沟道区重叠的栅电极，分别形成连接到第一掺杂区和第二掺杂区的源电极和漏极，以完成薄膜晶体管。

3. 发明授权

US08119463B2 Method of manufacturing thin film transistor and thin film transistor substrate 有权
标题翻译：制造薄膜晶体管和薄膜晶体管基板的方法
公开(公告)号：US08119463B2
公开(公告)日：2012-02-21
申请号：US12507725
申请日：2009-07-22
申请人： Jae Bon Koo , In-Kyu You , Seongdeok Ahn , Kyoung Ik Cho
发明人： Jae Bon Koo , In-Kyu You , Seongdeok Ahn , Kyoung Ik Cho
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/78603 , H01L27/1266 , H01L29/66757 , H01L29/78618
摘要： Provided is a method of manufacturing a thin film transistor that can improve self-alignment. In this method, a semiconductor layer comprising a first doped region, a second doped region and a channel region is formed on a sacrificial layer on a first substrate. Next, the semiconductor layer is separated from the first substrate and is then coupled on a second substrate. Next, a dielectric layer is formed on the second substrate and the semiconductor layer, and a first photoresist layer is formed on the dielectric layer. Thereafter, the first photoresist layer is exposed to light from a rear surface of the second substrate by using the first doped region and the second doped region as a mask, to form a first mask pattern. Next, a gate electrode overlapping the channel region is formed on the dielectric layer by using the first mask pattern as a mask, and a source electrode and a drain electrode connected to the first doped region and the second doped region, respectively are formed to complete a thin film transistor.
摘要翻译：提供了一种可以改善自对准的薄膜晶体管的制造方法。在该方法中，在第一衬底上的牺牲层上形成包括第一掺杂区域，第二掺杂区域和沟道区域的半导体层。接下来，半导体层与第一衬底分离，然后耦合在第二衬底上。接下来，在第二基板和半导体层上形成电介质层，在电介质层上形成第一光致抗蚀剂层。此后，通过使用第一掺杂区域和第二掺杂区域作为掩模，将第一光致抗蚀剂层从第二基板的后表面曝光，以形成第一掩模图案。接下来，通过使用第一掩模图案作为掩模在介电层上形成与沟道区重叠的栅电极，分别形成连接到第一掺杂区和第二掺杂区的源电极和漏极，以完成薄膜晶体管。

4. 发明授权

US08378421B2 Method of manufacturing thin film transistor and thin film transistor substrate 有权
标题翻译：制造薄膜晶体管和薄膜晶体管基板的方法
公开(公告)号：US08378421B2
公开(公告)日：2013-02-19
申请号：US13350037
申请日：2012-01-13
申请人： Jae Bon Koo , In-Kyu You , Seongdeok Ahn , Kyoung Ik Cho
发明人： Jae Bon Koo , In-Kyu You , Seongdeok Ahn , Kyoung Ik Cho
IPC分类号： H01L27/12
CPC分类号： H01L29/78603 , H01L27/1266 , H01L29/66757 , H01L29/78618
摘要： A thin film transistor substrate. The thin film transistor substrate includes a substrate, an adhesive layer on the substrate, and a semiconductor layer having a first doped region, a second doped region and a channel region on the adhesive layer. The thin film transistor substrate further includes a first dielectric layer on the semiconductor layer, a gate electrode overlapping the channel region, a second dielectric layer on the first dielectric layer and the gate electrode, a source electrode disposed on the second insulating layer, and a drain electrode spaced apart from the source electrode on the source electrode. The channel region is disposed between the first doped region and the second doped region, and has a transmittance higher than those of the first doped region and the second doped region.
摘要翻译：薄膜晶体管基板。薄膜晶体管衬底包括衬底，衬底上的粘合剂层，以及在粘合剂层上具有第一掺杂区域，第二掺杂区域和沟道区域的半导体层。薄膜晶体管基板还包括半导体层上的第一介电层，与沟道区重叠的栅极电极，第一介电层上的第二电介质层和栅极电极，设置在第二绝缘层上的源电极和漏电极与源电极上的源电极间隔开。沟道区域设置在第一掺杂区域和第二掺杂区域之间，并且具有高于第一掺杂区域和第二掺杂区域的透射率的透射率。

5. 发明授权

US09044964B2 Micro ballpoint pen and printing apparatus 有权
标题翻译：微圆珠笔和打印机
公开(公告)号：US09044964B2
公开(公告)日：2015-06-02
申请号：US13604708
申请日：2012-09-06
申请人： SangChul Lim , Yong Suk Yang , Seongdeok Ahn , Kyoung Ik Cho
发明人： SangChul Lim , Yong Suk Yang , Seongdeok Ahn , Kyoung Ik Cho
IPC分类号： B43K7/10 , B41J3/36 , B43K1/08
CPC分类号： B41J3/36 , B43K1/086
摘要： A micro ballpoint pen enabling to print directly straight, oblique, curved, dashed, broken and wavy lines and a printing apparatus including the same. The micro ballpoint pen may include a tip body including a caulking portion, at least one inner protrusion, and at least one expansible or shrinkable elastic portion, a ball provided between the caulking portion and the inner protrusion, the ball contacting and rolling on a target printing object to eject ink onto the target printing object, a supporting bar pressing the ball toward the caulking portion to form an ink outflowing channel between the caulking portion and the ball, and a control part expanding or shrinking the elastic portion to control the ink outflowing channel.
摘要翻译：一种微圆珠笔，其能够直接打印直的，倾斜的，弯曲的，虚线的，断裂的和波浪形的线条，以及包括它们的打印设备。微圆珠笔可以包括具有铆接部分，至少一个内部突起和至少一个可膨胀或可收缩的弹性部分的末端体，设置在铆接部分和内部突出部之间的球，在球体上接触和滚动目标打印对象将墨水喷射到目标印刷对象上，支撑杆将挤压滚珠朝向铆接部分，以在铆接部分和滚珠之间形成墨水流出通道;以及控制部分，其膨胀或收缩弹性部分以控制墨水流出渠道。

6. 发明申请

US20130141398A1 DEVICE FOR MEASURING WRITING PRESSURE OF ELECTRONIC PEN 审中-公开
标题翻译：用于测量电子笔的书写压力的装置
公开(公告)号：US20130141398A1
公开(公告)日：2013-06-06
申请号：US13535507
申请日：2012-06-28
申请人： Kyoung Ik CHO , Sang Seok Lee , Seongdeok Ahn
发明人： Kyoung Ik CHO , Sang Seok Lee , Seongdeok Ahn
IPC分类号： G06F3/033
CPC分类号： G06F3/03545
摘要： A device for measuring a writing pressure of electronic pen using a change of capacitance is disclosed. The device for measuring a writing pressure of electronic pen may include first and second fixed plates; a moving plate which constitutes a capacitive sensor together with the first and second fixed plates and moves between the first and second fixed plates according to a change of writing pressure; a tip which adheres to the moving plate to generate a writing pressure; and an elastic body restoring the moving plate to an original location when the moving plate moves from between the first and second fixed plates in a first direction.
摘要翻译：公开了一种使用电容变化来测量电子笔的书写压力的装置。用于测量电子笔的书写压力的装置可以包括第一和第二固定板; 移动板，其与第一和第二固定板一起构成电容式传感器，并根据书写压力的变化在第一和第二固定板之间移动; 粘附到移动板以产生书写压力的尖端; 以及当所述移动板沿着第一方向从所述第一和第二固定板之间移动时，将所述移动板恢复到原始位置的弹性体。

7. 发明申请

US20130081570A1 MICRO BALLPOINT PEN AND PRINTING APPARATUS 有权
标题翻译：微型点画笔和打印设备
公开(公告)号：US20130081570A1
公开(公告)日：2013-04-04
申请号：US13604708
申请日：2012-09-06
申请人： SangChul LIM , Yong Suk Yang , Seongdeok Ahn , Kyoung Ik Cho
发明人： SangChul LIM , Yong Suk Yang , Seongdeok Ahn , Kyoung Ik Cho
IPC分类号： B05C1/08
CPC分类号： B41J3/36 , B43K1/086
摘要： Provided are a micro ballpoint pen enabling to print directly straight, oblique, curved, dashed, broken and wavy lines and a printing apparatus including the same. The micro ballpoint pen may include a tip body including a caulking portion, at least one inner protrusion, and at least one expansible or shrinkable elastic portion, a ball provided between the caulking portion and the inner protrusion, the ball contacting and rolling on a target printing object to eject ink onto the target printing object, a supporting bar pressing the ball toward the caulking portion to form an ink outflowing channel between the caulking portion and the ball, and a control part expanding or shrinking the elastic portion to control the ink outflowing channel.
摘要翻译：提供一种微圆珠笔，其能够直接打印直的，斜的，弯曲的，虚线的，断裂的和波浪形的线，以及包括该圆珠笔的打印设备。微圆珠笔可以包括具有铆接部分，至少一个内部突起和至少一个可膨胀或可收缩的弹性部分的末端体，设置在铆接部分和内部突出部之间的球，在球体上接触和滚动目标打印对象将墨水喷射到目标印刷对象上，支撑杆将挤压滚珠朝向铆接部分，以在铆接部分和滚珠之间形成墨水流出通道;以及控制部分，其膨胀或收缩弹性部分以控制墨水流出渠道。

8. 发明申请

US20050142496A1 Method of fabricating bottom gate type organic thin film transistor 有权
标题翻译：底栅型有机薄膜晶体管的制造方法
公开(公告)号：US20050142496A1
公开(公告)日：2005-06-30
申请号：US11009831
申请日：2004-12-10
申请人： Seung Kang , Seongdeok Ahn , Chul Kim , Meyoung Joung , Kyung Suh
发明人： Seung Kang , Seongdeok Ahn , Chul Kim , Meyoung Joung , Kyung Suh
IPC分类号： H01L29/786 , G03F7/00 , H01L51/00 , H01L51/05
CPC分类号： H01L51/0545 , H01L51/0018 , H01L51/0036 , H01L51/0055 , H01L51/0068
摘要： A method of fabricating a bottom gate type organic thin film transistor is provided. The method includes the acts of: forming a gate conductive layer pattern on a substrate; forming a gate insulating layer on an exposed portion of the surface of the substrate and the gate conductive layer pattern; forming source/drain electrodes on the gate insulating layer to expose a portion of the surface of the gate insulating layer above on the gate conductive layer pattern; forming an organic semiconductor thin film on the exposed portion of the gate insulating layer; forming on the organic semiconductor thin film a passivation layer pattern exposing a portion of the surface of the organic semiconductor thin film; and forming an organic semiconductor thin film pattern by etching the exposed surface of the organic semiconductor thin film using the passivation layer pattern as an etch mask.
摘要翻译：提供一种制造底栅型有机薄膜晶体管的方法。该方法包括以下动作：在基板上形成栅极导电层图案; 在所述衬底的表面和所述栅极导电层图案的暴露部分上形成栅极绝缘层; 在所述栅极绝缘层上形成源极/漏极，以在所述栅极导电层图案上露出所述栅极绝缘层的表面的一部分; 在所述栅极绝缘层的暴露部分上形成有机半导体薄膜; 在所述有机半导体薄膜上形成暴露所述有机半导体薄膜表面的一部分的钝化层图案; 以及通过使用钝化层图案作为蚀刻掩模蚀刻有机半导体薄膜的暴露表面来形成有机半导体薄膜图案。

9. 发明申请

US20110143034A1 METHOD FOR DEPOSITING GRAPHENE FILM 审中-公开
标题翻译：沉积石墨膜的方法
公开(公告)号：US20110143034A1
公开(公告)日：2011-06-16
申请号：US12829381
申请日：2010-07-01
申请人： Seongdeok Ahn , Seung Youl Kang
发明人： Seongdeok Ahn , Seung Youl Kang
IPC分类号： C23C16/26
CPC分类号： C23C14/12 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B2204/04 , C23C14/24 , C23C14/5806 , C23C14/5846 , C23C16/26 , C23C16/45527 , C23C16/56
摘要： Provided is a method of depositing a graphene film. In the method includes supplying a gaseous-phase graphene source to a substrate, forming an adsorbed layer on the substrate by the graphene source, and activating the adsorbed layer by heating the adsorbed layer. Therefore, a uniform graphene film having a large area can be formed.
摘要翻译：提供一种沉积石墨烯薄膜的方法。在该方法中，将气相石墨烯源供给到基板，通过石墨烯源在基板上形成吸附层，通过加热吸附层来活化吸附层。因此，可以形成具有大面积的均匀的石墨烯膜。

10. 发明申请

US20120154899A1 METHODS OF OPERATING A DISPLAY DEVICE 有权
标题翻译：操作显示装置的方法
公开(公告)号：US20120154899A1
公开(公告)日：2012-06-21
申请号：US13326310
申请日：2011-12-14
申请人： Seongdeok Ahn , Seung Youl Kang
发明人： Seongdeok Ahn , Seung Youl Kang
IPC分类号： G02F1/167
CPC分类号： G09G3/344 , G09G2300/0452 , G09G2320/0242
摘要： Provided are methods of operating display devices. The method includes applying a first electric field to a capsule including first particles having a first color and second particles having a second color to move the first and second particles into a first region of the capsule; and applying a second electric field to the capsule to move the second particles into a second region of the capsule different from the first region and to leave the first particles in the first region of the capsule.
摘要翻译：提供操作显示设备的方法。所述方法包括将第一电场施加到胶囊，所述胶囊包括具有第一颜色的第一颗粒和具有第二颜色的第二颗粒，以将所述第一和第二颗粒移动到所述胶囊的第一区域中; 以及将第二电场施加到所述胶囊以将所述第二颗粒移动到所述胶囊的与所述第一区域不同的第二区域中，并将所述第一颗粒留在所述胶囊的所述第一区域中。

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