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1. 发明授权

US5187369A High sensitivity, high resolution, solid state x-ray imaging device with barrier layer 失效
标题翻译：高灵敏度，高分辨率，具有障碍层的固态X射线成像装置
公开(公告)号：US5187369A
公开(公告)日：1993-02-16
申请号：US762708
申请日：1991-09-19
申请人： Jack D. Kingsley , Robert F. Kwasnick , Ching-Yeu Wei , Richard J. Saia
发明人： Jack D. Kingsley , Robert F. Kwasnick , Ching-Yeu Wei , Richard J. Saia
IPC分类号： H01L27/14 , G01T1/20 , H01L27/146 , H01L31/09
CPC分类号： H01L27/14663
摘要： A radiation imager includes a photodetector array having topographically patterned surface features, which include support islands disposed over the active portion of one or more photodetectors in the photodetector array. A structured scintillator array having individual columnar scintillator elements is disposed in fixed relation to the photodetector array so that the individual scintillator elements are disposed on scintillator support islands. A barrier layer is disposed between the support islands and the photodetector array to minimize chemical interactions between the material forming the support island and the underlying photodetector array during the fabrication process. After the support islands have been patterned, the scintillator elements are grown by selectively depositing scintillator material on the support islands.
摘要翻译：辐射成像仪包括具有地形图案化的表面特征的光电检测器阵列，其包括设置在光电检测器阵列中的一个或多个光电探测器的有效部分之上的支撑岛。具有单个柱状闪烁体元件的结构闪烁体阵列以固定的关系设置在光电检测器阵列上，使得各个闪烁体元件设置在闪烁体支撑岛上。阻挡层设置在支撑岛和光电检测器阵列之间，以最小化在制造过程中形成支撑岛的材料与下面的光电检测器阵列之间的化学相互作用。在支撑岛被图案化之后，通过在支撑岛上选择性地沉积闪烁体材料来生长闪烁体元件。

2. 发明授权

US5318664A Patterning of indium-tin oxide via selective reactive ion etching 失效
标题翻译：通过选择性反应离子蚀刻形成氧化铟锡
公开(公告)号：US5318664A
公开(公告)日：1994-06-07
申请号：US791715
申请日：1991-11-14
申请人： Richard J. Saia , Robert F. Kwasnick , Ching-Yeu Wei
发明人： Richard J. Saia , Robert F. Kwasnick , Ching-Yeu Wei
IPC分类号： C04B41/53 , C04B41/91 , H01L31/18 , H05H1/00
CPC分类号： H01L31/1884 , C04B41/5346 , C04B41/91 , Y02E10/50
摘要： Indium-tin oxide is selective etched relative to silicon, molybdenum, aluminum, titanium, silicon oxide and silicon nitride using an organic radical and oxygen containing plasma which contains sufficient oxygen to prevent deposition of undesirable films on non-etching portions of the component being etched and on the reactor surfaces. The plasma lacks halogenated gases. A minimum differential etch rate of 8:1 of indium-tin oxide to silicon results with the other materials etching slower than silicon or not at all.
摘要翻译：使用含有足够氧的有机基团和含氧等离子体，相对于硅，钼，铝，钛，氧化硅和氮化硅选择性地蚀刻氧化铟锡，以防止在被蚀刻的组分的非蚀刻部分上沉积不期望的膜并在反应器表面上。等离子体缺乏卤化气体。铟锡氧化物与硅的最小差分蚀刻速率为8：1，其他材料的蚀刻比硅慢，或根本不蚀刻。

3. 发明授权

US5362660A Method of making a thin film transistor structure with improved source/drain contacts 失效
标题翻译：制造具有改善的源极/漏极触点的薄膜晶体管结构的方法
公开(公告)号：US5362660A
公开(公告)日：1994-11-08
申请号：US977967
申请日：1992-11-18
申请人： Robert F. Kwasnick , George E. Possin , David E. Holden , Richard J. Saia
发明人： Robert F. Kwasnick , George E. Possin , David E. Holden , Richard J. Saia
IPC分类号： H01L21/3213 , H01L21/336 , H01L29/45 , H01L21/265
CPC分类号： H01L29/66765 , H01L21/32139 , H01L29/458 , Y10S438/97
摘要： Minimum line spacing is reduced and line spacing uniformity is increased in thin film transistors by employing source/drain metallization having a first relatively thin layer of a first conductor and a second relatively thick layer of a second conductor. The second conductor is selected to be one which may be preferentially etched in the presence of the first conductor whereby the first conductor acts as an etch stop for the etchant used to pattern the second conductor portion of the source/drain metallization. This etching is preferably done using dry etching. Dry etching typically provides substantially better control of line width than wet etching. The etching of the second conductor can be done with a dry etch process which etches the photoresist at substantially the same rate as the second conductor whereby the second conductor is provided with a sidewall slope of substantially 45.degree. which improves the quality of passivation provided by subsequent deposition of a conformal passivating layer.
摘要翻译：通过采用具有第一相对薄的第一导体层和第二相对较厚的第二导体层的源极/漏极金属化，薄膜晶体管中的最小线间距减小，并且线间隔均匀性增加。第二导体被选择为可以在第一导体存在的情况下优先蚀刻的导体，由此第一导体充当用于图案化源极/漏极金属化的第二导体部分的蚀刻剂的蚀刻停止。该蚀刻优选使用干蚀刻进行。干蚀刻通常比湿式蚀刻提供对线宽度的更好的控制。第二导体的蚀刻可以通过干法蚀刻工艺进行，该蚀刻工艺以基本上与第二导体相同的速率蚀刻光致抗蚀剂，由此第二导体设置有大致为45°的侧壁斜率，这提高了后续提供的钝化质量共形钝化层的沉积。

4. 发明授权

US5198694A Thin film transistor structure with improved source/drain contacts 失效
标题翻译：具有改善的源极/漏极触点的薄膜晶体管结构
公开(公告)号：US5198694A
公开(公告)日：1993-03-30
申请号：US825218
申请日：1992-01-24
申请人： Robert F. Kwasnick , George E. Possin , David E. Holden , Richard J. Saia
发明人： Robert F. Kwasnick , George E. Possin , David E. Holden , Richard J. Saia
IPC分类号： H01L21/3213 , H01L21/336 , H01L29/45
CPC分类号： H01L29/66765 , H01L21/32139 , H01L29/458 , Y10S438/97
摘要： Minimum line spacing is reduced and line spacing uniformity is increased in thin film transistors by employing source/drain metallization having a first relatively thin layer of a first conductor and a second relatively thick layer of a second conductor. The second conductor is selected to be one which may be preferentially etched in the presence of the first conductor whereby the first conductor acts as an etch stop for the etchant used to pattern the second conductor portion of the source/drain metallization. This etching is preferably done using dry etching. Dry etching typically provides substantially better control of line width than wet etching. The etching of the second conductor can be done with a dry etch process which etches the photoresist at substantially the same rate as the second conductor whereby the second conductor is provided with a sidewall slope of substantially 45.degree. which improves the quality of passivation provided by subsequent deposition of a conformal passivating layer.
摘要翻译：通过采用具有第一相对薄的第一导体层和第二相对较厚的第二导体层的源极/漏极金属化，薄膜晶体管中的最小线间距减小，并且线间隔均匀性增加。第二导体被选择为可以在第一导体存在的情况下优先蚀刻的导体，由此第一导体充当用于图案化源极/漏极金属化的第二导体部分的蚀刻剂的蚀刻停止。该蚀刻优选使用干蚀刻进行。干蚀刻通常比湿式蚀刻提供对线宽度的更好的控制。第二导体的蚀刻可以通过干法蚀刻工艺进行，该蚀刻工艺以基本上与第二导体相同的速率蚀刻光致抗蚀剂，由此第二导体设置有大致为45°的侧壁斜率，这提高了后续提供的钝化质量共形钝化层的沉积。

5. 发明授权

US5191394A Amorphous silicon photodiode with sloped sidewalls and method of fabrication 失效
标题翻译：具有倾斜侧壁的非晶硅光电二极管和制造方法
公开(公告)号：US5191394A
公开(公告)日：1993-03-02
申请号：US783747
申请日：1991-10-28
申请人： Richard J. Saia , Robert F. Kwasnick , Brian W. Giambattista
发明人： Richard J. Saia , Robert F. Kwasnick , Brian W. Giambattista
IPC分类号： H01L21/3213 , H01L31/0216 , H01L31/0352 , H01L31/105 , H01L31/20
CPC分类号： H01L31/202 , H01L21/32137 , H01L31/02161 , H01L31/035281 , H01L31/1055 , Y02E10/50
摘要： Solid state photodetectors having amorphous silicon photodiode bodies with sloped sidewalls allowing for deposition of high integrity conformal layers thereover are produced by etching the amorphous silicon in a mostly anisotropic etchant in a reactive ion etcher in which the pressure of the etchant is controlled. A photoresist mask having sloped sidewalls is formed over the amorphous silicon to be etched and the pressure of the etchant is selected to produce the desired slope of the sidewall in the photodetector body; at lower pressures a smaller slope is produced in the silicon and at higher pressures a steeper slope is produced in the silicon.
摘要翻译：具有倾斜侧壁的具有倾斜侧壁的固态光电二极管主体通过在其中控制蚀刻剂压力的反应离子蚀刻器中的大多数各向异性蚀刻剂中蚀刻非晶硅而产生。在被蚀刻的非晶硅上形成具有倾斜侧壁的光致抗蚀剂掩模，并且选择蚀刻剂的压力以在光电检测器主体中产生所需侧壁的期望斜率; 在较低的压力下，在硅中产生较小的斜率，而在较高的压力下，在硅中产生更陡的斜率。

6. 发明授权

US5370972A Amorphous silicon photodiode with sloped sidewalls and method of fabrication 失效
标题翻译：具有倾斜侧壁的非晶硅光电二极管及其制造方法
公开(公告)号：US5370972A
公开(公告)日：1994-12-06
申请号：US949954
申请日：1992-09-24
申请人： Richard J. Saia , Robert F. Kwasnick , Brian W. Giambattista
发明人： Richard J. Saia , Robert F. Kwasnick , Brian W. Giambattista
IPC分类号： H01L21/3213 , H01L31/0216 , H01L31/0352 , H01L31/105 , H01L31/20 , G03C5/00
CPC分类号： H01L31/202 , H01L21/32137 , H01L31/02161 , H01L31/035281 , H01L31/1055 , Y02E10/50
摘要： Solid state photodetectors having amorphous silicon photodiode bodies with sloped sidewalls allowing for deposition of high integrity conformal layers thereover are produced by etching the amorphous silicon in a mostly anisotropic etchant in a reactive ion etcher in which the pressure of the etchant is controlled. A photoresist mask having sloped sidewalls is formed over the amorphous silicon to be etched and the pressure of the etchant is selected to produce the desired slope of the sidewall in the photodetector body; at lower pressures a smaller slope is produced in the silicon and at higher pressures a steeper slope is produced in the silicon.
摘要翻译：具有倾斜侧壁的具有倾斜侧壁的固态光电二极管主体通过在其中控制蚀刻剂的压力的反应离子蚀刻器中的大多数各向异性蚀刻剂中蚀刻非晶硅而产生。在被蚀刻的非晶硅上形成具有倾斜侧壁的光致抗蚀剂掩模，并且选择蚀刻剂的压力以在光电检测器主体中产生所需侧壁的期望斜率; 在较低的压力下，在硅中产生较小的斜率，而在较高的压力下，在硅中产生更陡的斜率。

7. 发明授权

US5401668A Method for fabrication solid state radiation imager having improved scintillator adhesion 失效
标题翻译：具有改善的闪烁体附着力的固态辐射成像仪的制造方法
公开(公告)号：US5401668A
公开(公告)日：1995-03-28
申请号：US115084
申请日：1993-09-02
申请人： Robert F. Kwasnick , Roger S. Ehle , Richard J. Saia
发明人： Robert F. Kwasnick , Roger S. Ehle , Richard J. Saia
IPC分类号： G01T1/20 , H01L21/28 , H01L31/0216 , H01L31/0232 , H01L2/302
CPC分类号： H01L31/02161 , H01L31/02322 , Y10S438/974
摘要： A method of fabricating a radiation imager with strong structural integrity and adhesion between the scintillator and photosensor array includes the steps of forming a photosensor array on a substrate; depositing a barrier layer over the photosensor array, the barrier layer having an upper surface of silicon nitride; treating the silicon nitride upper surface of the barrier layer to prepare the surface for the deposition of material thereover; and depositing a scintillator material over the treated upper surface of the barrier layer. The silicon nitride upper surface of the barrier layer is typically treated by etching the surface, such as in a reactive ion etch, for a selected amount of time, with less than about 500 .ANG. of material being removed from the surface.
摘要翻译：一种制造具有强烈的结构完整性和闪烁体与光电传感器阵列之间的粘附性的辐射成像仪的方法包括以下步骤：在衬底上形成光电传感器阵列; 在所述光电传感器阵列上沉积阻挡层，所述阻挡层具有氮化硅的上表面; 处理阻挡层的氮化硅上表面以制备其上沉积材料的表面; 以及在所述被处理的所述阻挡层的上表面上沉积闪烁体材料。阻挡层的氮化硅上表面通常通过在表面上蚀刻表面，例如在反应离子蚀刻中处理选定的时间，其中小于约500的材料从表面上除去。

8. 发明授权

US07011983B2 Large organic devices and methods of fabricating large organic devices 有权
标题翻译：大型有机器件和制造大型有机器件的方法
公开(公告)号：US07011983B2
公开(公告)日：2006-03-14
申请号：US10324417
申请日：2002-12-20
申请人： Donald F. Foust , Anil R. Duggal , Richard J. Saia , Herbert S. Cole
发明人： Donald F. Foust , Anil R. Duggal , Richard J. Saia , Herbert S. Cole
IPC分类号： H01L51/40
CPC分类号： H01L51/0097 , H01L51/5036 , H01L51/52 , H01L51/5203 , H01L51/5212 , H01L51/524 , H01L51/5256 , H01L2251/5338 , H01L2251/5361 , Y02E10/549 , Y02P70/521
摘要： Large, light-weight organic devices and methods of preparing large, light-weight organic devices. Specifically, flexible and rigid light-weight plastics are implemented. The flexible plastic may be disposed from a reel. A metal grid is fabricated on the flexible plastic to provide current conduction over the large area. A transparent oxide layer is provided over the metal grid to form the bottom electrode of the organic device. A light emitting or light gathering organic layer is disposed on the transparent oxide layer. A second electrode is disposed over the organic layer. Electrodes are coupled to the metal grid and the second electrode to provide electrical current to or from the organic layer. Depending on the type of materials used for the organic layer, the organic device may comprise an area light device or a photovoltaic device.
摘要翻译：大型，重量轻的有机器件和制备大型轻质有机器件的方法。具体来说，实现了柔性和刚性轻质塑料。柔性塑料可以从卷轴设置。在柔性塑料上制造金属网格以在大面积上提供电流传导。在金属网格上设置透明氧化物层以形成有机器件的底部电极。发光或聚光有机层设置在透明氧化物层上。第二电极设置在有机层上。电极耦合到金属网格和第二电极以向有机层提供电流或从有机层提供电流。根据用于有机层的材料的类型，有机器件可以包括区域光器件或光伏器件。

9. 发明授权

US5454904A Micromachining methods for making micromechanical moving structures including multiple contact switching system 失效
标题翻译：微机械移动结构的微加工方法，包括多接触切换系统
公开(公告)号：US5454904A
公开(公告)日：1995-10-03
申请号：US286722
申请日：1994-08-05
申请人： Mario Ghezzo , Richard J. Saia , Bharat S. Bagepalli , Imdad Imam , Dennis L. Polla
发明人： Mario Ghezzo , Richard J. Saia , Bharat S. Bagepalli , Imdad Imam , Dennis L. Polla
IPC分类号： B29C35/08 , B29C59/16 , H01H1/06 , H01H9/40 , H01H50/00 , B44C1/22 , B29C37/00 , C23F1/00
CPC分类号： H01H50/005 , B29C59/16 , B29C2035/0838 , H01H1/06 , H01H2001/0057 , H01H9/40 , Y10S438/94 , Y10T307/74
摘要： Micromachining methods for fabricating micromechanical structures which include plunger elements free to reciprocate within cavities are fabricated using processing steps in common with those employed in high density interconnect (HDI) technology for multi-chip module packaging. A polymer, such as a polyimide, is utilized as a micromachinable material. In one embodiment, cavities are formed in the polymer material by laser ablation, employing a sacrificial layer as a mask. Electroplated copper may be employed as a sacrificial release layer. One particular structure is a micromechanical electric switch including an array of individual switch contacts actuatable in common.
摘要翻译：用于制造微机械结构的微加工方法，其包括在空腔内自由往复运动的柱塞元件的微机械结构使用与用于多芯片模块封装的高密度互连（HDI）技术中采用的步骤相同的处理步骤来制造。聚合物如聚酰亚胺被用作可微加工材料。在一个实施例中，通过激光烧蚀在聚合物材料中形成空腔，采用牺牲层作为掩模。电镀铜可以用作牺牲剥离层。一个特定结构是微机电式电开关，其包括可共同致动的单独开关触点的阵列。

10. 发明授权

US07158383B2 Techniques for fabricating a resistor on a flexible base material 有权
标题翻译：在柔性基材上制造电阻器的技术
公开(公告)号：US07158383B2
公开(公告)日：2007-01-02
申请号：US10716143
申请日：2003-11-18
申请人： Kevin M. Durocher , Richard J. Saia , Vikram B. Krishnamurthy
发明人： Kevin M. Durocher , Richard J. Saia , Vikram B. Krishnamurthy
IPC分类号： H05K1/16
CPC分类号： H01C17/12 , B29C59/14 , H01C7/006 , H05K1/0346 , H05K1/167 , H05K3/381 , H05K3/388 , H05K2201/0154 , H05K2201/0317 , H05K2203/095 , H05K2203/1136
摘要： A technique for fabricating a resistor on a flexible substrate. Specifically, at least a portion of a polyimide substrate is activated by exposure to a ion sputter etch techniques. A metal layer is disposed over the activated portion of the substrate, thereby resulting in the formation of a highly resistive metal-carbide region. Interconnect layers are disposed over the metal-carbide region and patterned to form terminals at opposite ends of the metal carbide region. The metal-carbide region is patterned to form a resistor between the terminals. Alternatively, only a selected area of the polyimide substrate is activated. The selected area forms the area in which the metal-carbide region is formed. Interconnect layers are disposed over the metal-carbide region and patterned to form terminals at opposite ends of the metal-carbide region.
摘要翻译：一种在柔性基板上制造电阻器的技术。具体地，通过暴露于离子溅射蚀刻技术来活化聚酰亚胺基底的至少一部分。金属层设置在基板的激活部分上，从而形成高电阻金属碳化物区域。互连层设置在金属碳化物区域上并被图案化以在金属碳化物区域的相对端形成端子。将金属碳化物区域图案化以在端子之间形成电阻器。或者，仅激活聚酰亚胺基板的选定区域。所选择的区域形成形成金属碳化物区域的区域。互连层设置在金属碳化物区域上并被图案化以在金属碳化物区域的相对端形成端子。

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