专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH02137765A PRODUCTION OF TRANSPARENT SINTERED COMPOSITE PRODUCT OF ALUMINUM OXYNITRIDE 失效
公开(公告)号：JPH02137765A
公开(公告)日：1990-05-28
申请号：JP29067988
申请日：1988-11-17
申请人： JAPAN TECH RES & DEV INST , MITSUBISHI ELECTRIC CORP
发明人： SUGANO TOSHIO , SATO KAZUTAMI , SONE TAKANORI , AKAGI KOICHI , UCHIUMI YOSHIKAZU
IPC分类号： C04B35/115 , C04B35/10 , C04B35/58
摘要： PURPOSE:To obtain a transparent aluminum oxynitride sintered composite body containing the Al23O27N5 phase and the Al11O15N phase as a constitution matrix by sintering a mixed powder of an Al2O3 powder and an Al powder at a specific weight ratio at a specific temperature for a certain time. CONSTITUTION:65.5 to 93.4wt.% of an Al2O3 powder and 6.6 to 13.5wt.% of an aluminum powder are mixed, the mixed powder is granulated, particle- classified and formed, for example, by compressing the powder in a mold. The formed product is set in a sintering furnace and sintered in a nitrogen atmosphere at 1,750 to 1,900 deg.C for 1 to 10 hours to give the subject transparent aluminum oxynitride sintered complex body. The hot pressing of the sintered product further under higher than 100kgf/cm compresses and densities the product whereby the sintered product of improved transparency is obtained.

2. 发明专利

JPH04193756A PRODUCTION OF SULFIDE CERAMICS 失效
公开(公告)号：JPH04193756A
公开(公告)日：1992-07-13
申请号：JP32454190
申请日：1990-11-27
申请人： JAPAN TECH RES & DEV INST , MITSUBISHI ELECTRIC CORP
发明人： SUGANO TOSHIO , SONE TAKANORI , AKAGI KOICHI , WATAI HISAO
IPC分类号： C04B35/547 , C04B35/00
摘要： PURPOSE:To obtain a dense sulfide ceramics without the S ion being decomposed or vaporized by hot-press sintering without using H2S by exerting a unidirectional pressure on a sulfide powder in sulfur vapor to hot-press-sinter the powder. CONSTITUTION:An equimolar mixture of calcium sulfide (CaS) and lanthanum sulfide (La2S3) is heat-treated at 1000 deg.C in H2S to obtain a sample of calcium lanthanum sulfide (CaLa2S4), and the sample is further crushed to obtain the CaLa2S4 powder. The powder is placed in an aluminum press die 2, and sulfur for generating sulfur vapor is put in a platinum crucible and set in a sulfur vapor confining press die 3. The die 3 is placed in a hot pressing device which is evacuated, and then Ar gas is introduced into a furnace to about 1 atm. The sample is sintered at about 1400 deg.C for about 30min under the load of about 200kgf/cm , and a pale-yellow dense body is obtained from the sintered body.

3. 发明专利

JPH02129075A PRODUCTION OF TRANSPARENT COMPOUND SINTERED MATERIAL OF ALUMINUM OXYNITRIDE 失效
公开(公告)号：JPH02129075A
公开(公告)日：1990-05-17
申请号：JP28062788
申请日：1988-11-07
申请人： JAPAN TECH RES & DEV INST , MITSUBISHI ELECTRIC CORP
发明人： SUGANO TOSHIO , SATO KAZUTAMI , SONE TAKANORI , AKAGI KOICHI , UCHIUMI YOSHIKAZU
IPC分类号： C04B35/58 , C04B35/10 , C04B35/115
摘要： PURPOSE:To obtain the subject sintered material having excellent transparency in a short time at a low temperature compared with conventional process by mixing a specific amount of a Y compound to a mixture of Al2O3 powder and AIN powder at a specific ratio and pressing and sintering the mixture under specific condition. CONSTITUTION:A mixture composed of 86.5-93.4wt.% of Al2O3 powder, 6.6-13.5wt.% of AIN powder and =100kgf/cm to obtain a compound sintered material at least containing Al23O27N5 phase and Al11O15N phase as constituent matrices. The sintering can be promoted and performed at a lower temperature because the Y compound and the Al11O15N phase form liquid phase at a low temperature compared with Al23O275N. Al11O15N phase is formed in the sintered material when the ratio of Al2O3 to AIN is within the above range. When the sintering temperature is lower than the lower limit, the transparency of the product is deteriorated and when it exceeds the upper limit, sufficiently sintered material cannot be obtained. The transparency becomes poor when the sintering time is shorter than the lower limit and there is no formation of Al11O15N phase when the time is longer than the upper limit.

4. 发明专利

JPS6246559A MANUFACTURE OF IMAGE PICKUP DEVICE 失效
公开(公告)号：JPS6246559A
公开(公告)日：1987-02-28
申请号：JP18591785
申请日：1985-08-26
申请人： JAPAN TECH RES & DEV INST
发明人： TSUNODA REIKICHI , SUGANO TOSHIO , TSUJI TAKAFUMI , ANDO JUNICHI
IPC分类号： H01L27/146 , H01L27/14 , H04N1/028
摘要： PURPOSE:To improve the ohmic properties of a contact between conductive films as two layers and increase adhesion thereof by continuously depositing a photo-gate and the conductive layer as a first layer lead electrode on an insulating layer in a vacuum or a lean gas and forming the conductive layer as a second layer lead electrode on the first layer lead electrode. CONSTITUTION:Two-layer films of a CVD-SiO2 film or CVD-SiO2 and sputtered SiO2 are used s a first layer insulating film 11. A stopper 12 is shaped by a metal evaporated film consisting of Al, etc., and sputtered SiO2 is employed as a second layer insulating film 13. Ti, Cr, etc. are used as photo-gate 14, but Cr is excellent in tackiness with SiO2 and Ti at the point of transmittance to electromagnetic waves projected. Al is employed as a first layer lead electrode metal 15, and the lead electrode metal 15 is shaped continuously with the photo-gate 14 without being returned to atmospheric pressure in a vacuum or in low pressure gas. An Al film or two-layer films of Cr-Au are used as a second layer lead electrode metal 16.

5. 发明专利

JPH10267752A THERMAL TYPE INFRARED SENSOR 失效
公开(公告)号：JPH10267752A
公开(公告)日：1998-10-09
申请号：JP9165397
申请日：1997-03-26
申请人： JAPAN TECH RES & DEV INST
发明人： SUGANO TOSHIO
IPC分类号： G01J1/02 , G01J5/12 , G01J5/14 , G01J5/24 , G01J5/48
摘要： PROBLEM TO BE SOLVED: To improve the sensitivity and picture quality of a thermal infrared sensor. SOLUTION: A thermo pile is connected an emitter of a bipolar transistor 14 where an inverse saturation current for emitter jointing is large, and an inverse saturation current for collector joining is small, and a collector of the transister 14 is connected to the source of a MOS type transister 15, and a drain of the MOS type transister 15 is connected to a charge accumulation section 16. A bias current applied to the emitter in order to carry a required quantity of emitter current is enough to be low, and an emitter current generated by the electromotive voltage of the thermo pile 13 relatively increases to heighten the sensitivity of a sensor. Even if the threshold voltage of the MOS type transister 15 has fluctuation, since the current to flow into the charge accumulation section 16 is almost limited to the inverse saturation current for collector joining except the emitter current, the fluctuation of an output voltage due to the fluctuation of the threshold voltage can be reduced to obtain a good image.

6. 发明专利

JPH07134066A INFRARED SENSOR AND ITS MANUFACTURE 失效
公开(公告)号：JPH07134066A
公开(公告)日：1995-05-23
申请号：JP31573993
申请日：1993-11-10
申请人： JAPAN TECH RES & DEV INST , NEC CORP
发明人： SUGANO TOSHIO , TERANISHI SHINICHI
IPC分类号： G01J1/02 , H01L35/32
摘要： PURPOSE:To improve the sensitivity of a thermal infrared sensor and reduce the dark current of the sensor. CONSTITUTION:A sacrificial layer patterned to the size of a diaphragm 35 is coated with a thin film 34 having an etching resistance and a cavity 33 is formed by etching the sacrificial layer so that the thin film 34 can be formed to the diaphragm 35. Then the hot junction of a thermopile is positioned on the diaphragm 35. When such a constitution is used, the sacrificial layer can be etched by only providing small etching holes 40 in the peripheral area of the diaphragm 35 and the sensitivity of an infrared sensor can be improved, because the hot junction can be positioned at the central part of the diaphragm 35 and the diaphragm 35 can be formed on a charge accumulating section or charge reading-out section. In addition, the occurrence of dark currents is also reduced, because a silicon substrate 31 is not etched.

7. 发明专利

JPH04191624A STRUCTURE FOR PREVENTING STRAY LIGHT IN PYRAMIDAL DOME 失效
公开(公告)号：JPH04191624A
公开(公告)日：1992-07-09
申请号：JP32227190
申请日：1990-11-27
申请人： JAPAN TECH RES & DEV INST
发明人： SUGANO TOSHIO , SAGA MINORU
IPC分类号： G01J1/04 , G02B27/00
摘要： PURPOSE:To reduce the stray light in the pyramidal dome and to obtain an image in a correct direction from the light transmitted through the transmission plate constituting the pyramidal dome by providing a light shield plate in the pyramidal dome. CONSTITUTION:The surface of a transmission plate 1 made of a light previous material is processed so as to obtain the optical degree of parallilization and accuracy and the transmission plates 1 are used to form a pyramidal dome (a). Light shield plates 4 each made of a light absorbing material, for example, a metal plate having a light absorber bonded thereto are provided in the pyramidal dome (a). The center lines of the shield plates 4 are allowed to coincide with the center line of the pyramidal dome and brought into close contact with the respective edges on every other edge of the pyramidal dome. The light transmitted through the transmission plate 1 directly enters a lens system without reaching the opposed transmission plate 1 and generating stray light to form an image. By this constitution, the error caused by stray light is prevented and the direction of an object can be correctly measured.

8. 发明专利

JPH0442851A PRODUCTION OF LEAD GERMANATE THIN FILM 失效
公开(公告)号：JPH0442851A
公开(公告)日：1992-02-13
申请号：JP14725090
申请日：1990-06-07
申请人： JAPAN TECH RES & DEV INST
发明人： SAGA MINORU , SUGANO TOSHIO
IPC分类号： G01J1/02 , C04B35/00 , G01J5/02 , G01J5/34 , H01L21/368 , H01L37/00
摘要： PURPOSE:To directly obtain a thin film of lead germanate by the use of a simple device in a short time by using Pb-alkoxide and Ge-alkoxide as raw materials and forming a thin film of lead germanate with a spray-pyrolytic method. CONSTITUTION:A thin film of lead germanate is formed by a spray-pyrolytic method using alkoxide of lead and alkoxide of germanium as raw materials. The producing method of said thin film of lead germanate is an extremely economical one as a thin film-forming technique, capable of forming a thin film of lead germanate having pyroelectric properties by burning for a short time by the use of an industrially simple device such as a spraying device and an electric furnace. Furthermore, although an inorganic acid, an organic acid and an inorganic metallic salt, etc., is exemplified as a starting raw material in a spray pyrolytic method, highly purified metal alkoxide belonging to an organic metallic salt is readily obtained and has many excellent properties in contrast to other metallic salts such as those capable of film-forming at low temperatures.

9. 发明专利

JPH03278680A SIGNAL CORRECTION METHOD FOR INFRARED RAY IMAGE PICKUP DEVICE 失效
公开(公告)号：JPH03278680A
公开(公告)日：1991-12-10
申请号：JP7694090
申请日：1990-03-28
申请人： JAPAN TECH RES & DEV INST
发明人： SUGANO TOSHIO
IPC分类号： H04N5/33 , H04N5/335 , H04N5/353 , H04N5/361 , H04N5/365 , H04N5/369 , H04N5/378
摘要： PURPOSE:To correct dispersion in a video signal suitable for background temperature simply in a short time by using a lens system so as to give a uniform incident luminous quantity to each photodetector thereby correcting electrically the dispersion in the video signal due to a difference from the characteristic among the photodetectors. CONSTITUTION:A 2nd lens system 8 on a same optical axis in place of a 1st lens system is employed in an infrared ray image pickup device provided with an infrared ray detection element 4 comprising plural infrared ray receiving elements and with the 1st lens system 1 having a 1st image face 3 to a light receiving face of the detection element 4 and an output signal of the detection element 4 obtained by locating the position of the 2nd image face 9b being an image forming face of the 2nd lens system 8 different from the position of the light detection face to correct the dispersion in the video signal electrically. In this case, when a temperature around the device and an external background temperature differ from each other. the average luminous quantity made incident on the detection element 4 is adjusted by changing the image face position. Thus, a data used for offset correction and gain correction proper to the background temperature is obtained by using the output signal of the detection element when the average luminous quantity is properly adjusted.

10. 发明专利

JPH03278005A LASER BEAM REMOVING DEVICE 失效
公开(公告)号：JPH03278005A
公开(公告)日：1991-12-09
申请号：JP7693990
申请日：1990-03-28
申请人： JAPAN TECH RES & DEV INST
发明人： SUGANO TOSHIO
IPC分类号： G02B5/28
摘要： PURPOSE:To remove a laser beam from other light beam existing with the laser beam at the same wavelength as the wavelength of the laser beam or the wavelength near this wavelength by disposing >=2 faces of reflecting surfaces in parallel apart a spacing of >=1/2 the coherence distance of the other light beam within a range of =1/2 the coherence distance of the other light beam 4. Further, the spacing error between the adja cent reflecting surface 1, 2 is confined within 1/4 wavelength of the laser beam 3. The interference of light by multiple reflections arises in the laser beam 3 if >=2 faces of the reflecting surfaces 1, 2 are placed in parallel within

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式