专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2007201393A Photovoltaic ultraviolet sensor 有权
标题翻译：光伏超紫外线传感器
公开(公告)号：JP2007201393A
公开(公告)日：2007-08-09
申请号：JP2006088262
申请日：2006-03-28
申请人： Iwate Industrial Research Center , Iwate Information System Corp , Iwate Univ , 国立大学法人岩手大学 , 地方独立行政法人岩手県工業技術センター , 株式会社岩手情報システム
发明人： SUGIBUCHI MASATSUGU , TAKAHASHI HIROSUKE , GOTO SHUNSUKE , KASHIBA YASUBE , ENDO HARUYUKI , HASEGAWA TATSUO , IZUMIDA FUKUNORI , OSHIMA ERIKO
IPC分类号： H01L31/108 , H01L21/28 , H01L29/47 , H01L29/872
摘要： PROBLEM TO BE SOLVED: To provide an ultraviolet sensor that dispenses with a complicated device or the like, does not sense a visible light, and whose speed of response is fast. SOLUTION: The ultraviolet sensor is a photovoltaic one that is provided with zinc oxide mono crystal substrate 11 and an ultraviolet light receiver including a Schottky electrode 12 formed on its +c surface. The Schottky electrode 12 has a thick film that may exhibit ultraviolet-ray permeability, for example, one having at least one layer consisting of Pt, Ru, Pd, Au, Ni, Ir, Os, Re, Rh, Te or W can be used. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种省去复杂的装置等的紫外线传感器，不会感测到可见光，并且其响应速度快。解决方案：紫外线传感器是设置有氧化锌单晶基板11的光电式传感器和在其+ c表面上形成有肖特基电极12的紫外线接收器。肖特基电极12具有可以呈现紫外线透过性的厚膜，例如具有由Pt，Ru，Pd，Au，Ni，Ir，Os，Re，Rh，Te或W组成的至少一层的厚膜可以是用过的。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2009246073A Semiconductor radiation detector 审中-公开
标题翻译：半导体辐射探测器
公开(公告)号：JP2009246073A
公开(公告)日：2009-10-22
申请号：JP2008089432
申请日：2008-03-31
申请人： Iwate Industrial Research Center , Iwate Information System Corp , 地方独立行政法人岩手県工業技術センター , 株式会社岩手情報システム
发明人： ENDO HARUYUKI , MEGURO KAZUYUKI , SUGIBUCHI MASATSUGU
IPC分类号： H01L31/09 , G01T1/24 , H01L27/14 , H01L29/47 , H01L29/861 , H01L29/872
CPC分类号： H01L2224/48091 , H01L2224/73265 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor radiation detector which specifies a material which can replace CdTe and has a small environmental load, and uses it. SOLUTION: There is used the radiation detector comprising a diode configured by utilizing a zinc oxide monocrystal substrate. A Schottky electrode 220 composed of a Pt thin film with a film thickness of 0.1 μm is formed on a substrate 210 composed of n-type zinc oxide of a thickness 2 mm. Successively, a Cr thin film 231 with a film thickness of 0.1 μm is formed on a lower face of the substrate 210, and further an Au thin film 232 with a film thickness of 0.1 μm is formed on a lower face of the Cr thin film 231. The Cr thin film 231 and the Au thin film 232 function as an ohmic electrode 230. Since a current flows in the Schottky diode when a radiation is incident on the substrate 210, it is possible to detect the radiation. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体辐射检测器，其指定可以替代CdTe并具有小的环境负载的材料并使用它。解决方案：使用包括通过利用氧化锌单晶衬底构造的二极管的辐射检测器。在由厚度为2mm的n型氧化锌构成的基板210上形成由薄膜厚度为0.1μm的Pt薄膜构成的肖特基电极220。接着，在基板210的下表面上形成膜厚0.1μm的Cr薄膜231，在Cr薄膜的下表面形成膜厚0.1μm的Au薄膜232 Cr薄膜231和Au薄膜232用作欧姆电极230.由于当辐射入射到衬底210上时，在肖特基二极管中流过电流，因此可以检测辐射。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2006278487A Ultraviolet sensor element and its manufacturing method 有权
标题翻译： ULTRAVIOLET传感器元件及其制造方法
公开(公告)号：JP2006278487A
公开(公告)日：2006-10-12
申请号：JP2005092223
申请日：2005-03-28
申请人： Iwate Industrial Research Center , Iwate Univ , 国立大学法人岩手大学 , 地方独立行政法人岩手県工業技術センター
发明人： KASHIBA YASUBE , NIIKURA IKUO , ENDO HARUYUKI
IPC分类号： H01L31/0264
摘要： PROBLEM TO BE SOLVED: To provide an ultraviolet sensor element which can obtain appropriate photosensitivity with a simple texture, and to provide a method of manufacturing it.
SOLUTION: The ultraviolet sensor element has a texture where a cap 70 with which an ultraviolet transmission filter 72 is formed in a stem 60 is welded and the chip 50 is sealed. The ultraviolet rays irradiated from outside penetrates the ultraviolet transmission filter 72, and reaches the c-th surface which is the photodetecting sides of a chip shape zinc oxide single crystal 30 which constitutes the chip 50. The ultraviolet rays reach the c-th surface of chip shape zinc oxide single crystal 30, thereby changing the resistance value of the chip shape zinc oxide single crystal 30. When the resistance value changes, the value of the current (photocurrent) of the signal also changes which flows the chip shape zinc oxide single crystal 30. The apparatus of the exterior which is not illustrated is connected with a terminal 62, detects the current value of the signal, and can calculate the ultraviolet dosage based on the current value.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够以简单的质感获得合适的感光度并提供其制造方法的紫外线传感器元件。＆lt; P＆gt;解决方案：紫外线传感器元件具有在杆60中形成有紫外线透射过滤器72的盖70被焊接并且密封芯片50的结构。从外部照射的紫外线透过紫外线透射滤光片72，到达构成芯片50的芯片状氧化锌单晶30的受光面的第c面。紫外线到达第芯片形状的氧化锌单晶30，从而改变芯片形状的氧化锌单晶30的电阻值。当电阻值变化时，信号的电流（光电流）的值也随着片状氧化锌单晶的流动而变化未示出的外部装置与端子62连接，检测信号的当前值，并且可以基于当前值计算紫外线剂量。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2013008998A Ultraviolet sensor element and manufacturing method thereof 有权
标题翻译： ULTRAVIOLET传感器元件及其制造方法
公开(公告)号：JP2013008998A
公开(公告)日：2013-01-10
申请号：JP2012198654
申请日：2012-09-10
申请人： Iwate Univ , 国立大学法人岩手大学 , Iwate Industrial Research Center , 地方独立行政法人岩手県工業技術センター
发明人： KASHIBA YASUBE , NIIKURA IKUO , ENDO HARUYUKI
IPC分类号： H01L31/0264 , G01J1/02
摘要： PROBLEM TO BE SOLVED: To provide an ultraviolet sensor element which can obtain appropriate photosensitivity with simple structure, and to provide a method of manufacturing the ultraviolet sensor element.SOLUTION: An ultraviolet sensor element comprises structure where a cap 70 with which an ultraviolet transmission filter 72 is formed in a stem 60 is welded and a chip 50 is sealed. Ultraviolet rays irradiated from outside penetrates the ultraviolet transmission filter 72, and reaches an "a" surface which is a light-receiving surface of a chip shape zinc oxide single crystal 30 which constitutes the chip 50. The ultraviolet rays reach the "a" surface of the chip shape zinc oxide single crystal 30, thereby changing a resistance value of the chip shape zinc oxide single crystal 30. When the resistance value changes, a current value (photocurrent) of a signal also changes which flows the chip shape zinc oxide single crystal 30. An apparatus of the exterior which is not illustrated is connected with a terminal 62, detects the current value of the signal, and can calculate the amount of the ultraviolet rays on the basis of the current value.
摘要翻译：要解决的问题：提供一种能够以简单的结构获得合适的感光度的紫外线传感器元件，并提供一种制造紫外线传感器元件的方法。解决方案：紫外线传感器元件包括其中在杆60中形成紫外线透射过滤器72的帽70被焊接并且密封芯片50的结构。从外部照射的紫外线透过紫外线透射滤光片72，到达构成芯片50的芯片状氧化锌单晶30的受光面的“a”面。紫外线到达“a”面的片状氧化锌单晶30，从而改变片状氧化锌单晶30的电阻值。当电阻值变化时，信号的电流值（光电流）也随着芯片形状的氧化锌单晶流动而变化未示出的外部装置与端子62连接，检测信号的电流值，并且可以基于当前值计算紫外线的量。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2007052005A Pressure sensor element and pressure sensor 有权
标题翻译：压力传感器元件和压力传感器
公开(公告)号：JP2007052005A
公开(公告)日：2007-03-01
申请号：JP2006191943
申请日：2006-07-12
申请人： Iwate Industrial Research Center , Mikuni Corp , 地方独立行政法人岩手県工業技術センター , 株式会社ミクニ
发明人： MATSUMOTO TAKASHI , ENDO HARUYUKI
IPC分类号： G01L9/08
摘要： PROBLEM TO BE SOLVED: To provide a pressure sensor element and a pressure sensor having high sensitivity, and usable at a high temperature.
SOLUTION: The pressure sensor has the pressure sensor element 101 comprising an armoring container 115 having a cylindrical sensor part 117 whose one end is opened and whose other end is closed, a pressure receiving plate 143 mounted on one end of the sensor part vertically to the center shaft of the sensor part, a piezoelectric body 103 interposed between the other end side inner wall 111 of the sensor part and the pressure receiving plate and comprising a zinc oxide single crystal, and a pair of electrodes 105a, 105b formed mutually oppositely on the surface in the vertical direction to a polarization axis of the piezoelectric body; and lead wires 107a, 107b for taking out an electric signal generated between the pair of electrodes of the pressure sensor elements. The impurity concentration of the zinc oxide single crystal forming the piezoelectric body is preferably 10 ppm or less.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有高灵敏度的压力传感器元件和压力传感器，并且可以在高温下使用。解决方案：压力传感器具有压力传感器元件101，该压力传感器元件101包括具有圆柱形传感器部分117的铠装容器115，其一端打开并且另一端封闭;受压板143，安装在传感器部分的一端垂直于传感器部分的中心轴的压电体103，介于传感器部分的另一端内壁111和受压板之间并包括氧化锌单晶的压电体103和相互形成的一对电极105a，105b 相对于压电体的偏振轴在垂直方向的表面上; 以及用于取出在压力传感器元件的一对电极之间产生的电信号的引线107a，107b。形成压电体的氧化锌单晶的杂质浓度优选为10ppm以下。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2012159231A Glow plug 审中-公开
标题翻译： GLOW插头
公开(公告)号：JP2012159231A
公开(公告)日：2012-08-23
申请号：JP2011018714
申请日：2011-01-31
申请人： Iwate Industrial Research Center , Mikuni Corp , Tokyo Denpa Co Ltd , 地方独立行政法人岩手県工業技術センター , 東京電波株式会社 , 株式会社ミクニ
发明人： TAKAHASHI TSUYOSHI , ENDO HARUYUKI , FUKUI KATSUHIKO , MATSUMOTO TAKASHI , MATSUO SHUNJI
IPC分类号： F23Q7/00 , F02P19/00
摘要： PROBLEM TO BE SOLVED: To provide a glow plug enabling combustion pressure measurement with higher precision without causing a malfunction of a pressure sensor etc. due to movement of a center shaft.SOLUTION: A glow plug 1 includes a housing 10 of substantially cylindrical form, a holding member 20 attached to the housing 10, a shaft 30 held by the holding member 20, and a sensor module 50. The shaft 30 is held by the holding member 20 so that relative movement to the housing 10 is disabled. A bottom surface 24 of the holding member 20 is located inside of the housing 10 and on the bottom surface 24 of the holding member 20, an upper surface 50a of the sensor module 50 is fixed. An undersurface 50b of the sensor module 50 is located within the housing 10. The sensor module 50 is configured to detect the combustion pressure by receiving the combustion pressure within an internal combustion engine directly or indirectly at the undersurface 50b.
摘要翻译：要解决的问题：提供一种能够以更高的精度进行燃烧压力测量的电热塞，而不会由于中心轴的移动而导致压力传感器等的故障。解决方案：电热塞1包括大致圆筒形的壳体10，附接到壳体10的保持构件20，由保持构件20保持的轴30和传感器模块50.轴30由保持构件20使得对壳体10的相对运动被禁用。保持构件20的底表面24位于壳体10的内部，并且在保持构件20的底面24上固定传感器模块50的上表面50a。传感器模块50的下表面50b位于壳体10内。传感器模块50构造成通过直接或间接地在底面50b处接收内燃机内的燃烧压力来检测燃烧压力。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2012159374A Pressure sensor element 有权
标题翻译：压力传感器元件
公开(公告)号：JP2012159374A
公开(公告)日：2012-08-23
申请号：JP2011018715
申请日：2011-01-31
申请人： Iwate Industrial Research Center , Mikuni Corp , 地方独立行政法人岩手県工業技術センター , 株式会社ミクニ
发明人： TAKAHASHI TSUYOSHI , ENDO HARUYUKI , FUKUI KATSUHIKO , MATSUMOTO TAKASHI
IPC分类号： G01L9/08
CPC分类号： G01L9/085 , G01L9/0022 , G01L9/008 , G01L19/04 , G01L23/10
摘要： PROBLEM TO BE SOLVED: To provide a pressure sensor element which prevents large decrease in a resistance value due to a temperature rise.SOLUTION: A pressure sensor element includes a piezoelectric element having upper and lower surfaces and a high resistance material film which at least partially covers at least one of the upper and lower surfaces. An electric resistance value of the high resistance material film is larger than that of the piezoelectric element.
摘要翻译：要解决的问题：提供一种防止由温度升高引起的电阻值大幅降低的压力传感器元件。解决方案：压力传感器元件包括具有上表面和下表面的压电元件和至少部分地覆盖上表面和下表面中的至少一个的高电阻材料膜。高电阻材料膜的电阻值大于压电元件的电阻值。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2008251773A Method for adjusting sensitive wavelength band of ultraviolet sensor and apparatus which is manufactured on the basis of this method 有权
标题翻译：用于调整超声波传感器的敏感波段的方法和基于该方法制造的装置
公开(公告)号：JP2008251773A
公开(公告)日：2008-10-16
申请号：JP2007090303
申请日：2007-03-30
申请人： Iwate Industrial Research Center , 地方独立行政法人岩手県工業技術センター
发明人： ENDO HARUYUKI , FUJIWARA MAKI
IPC分类号： H01L31/108
摘要： PROBLEM TO BE SOLVED: To provide a method for adjusting a sensitive wavelength band of an ultraviolet sensor especially based on a zinc oxide single-crystal substrate which can contribute to differential detection of UV-A to UV-C.
SOLUTION: For shifting the sensitive wavelength band of ultraviolet sensors 10a and 10b which are provided with the zinc oxide single-crystal substrate 11 and schottky electrodes 13a and 13b toward longer wavelength, a cadmium-added zinc oxide thin film is formed on the zinc oxide single-crystal substrate 11 and the schottky electrode 13a is formed on the zinc oxide thin film. On the other hand, for shifting the wavelength band toward the shorter wavelength, a magnesium-added zinc oxide thin film 12b is formed on the zinc oxide single-crystal substrate 11 and then the schottky electrode 13b is formed on the thin film 12b.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于调节紫外线传感器的敏感波长带的方法，特别是基于可有助于UV-A到UV-C的差异检测的氧化锌单晶基板。解决方案：为了将设置有氧化锌单晶衬底11和肖特基电极13a和13b的紫外线传感器10a和10b的敏感波长带朝向更长的波长移动，将附加有镉的氧化锌薄膜形成在在氧化锌薄膜上形成氧化锌单晶衬底11和肖特基电极13a。另一方面，为了将波长带向短波长移动，在氧化锌单晶基板11上形成镁的氧化锌薄膜12b，然后在薄膜12b上形成肖特基电极13b。版权所有（C）2009，JPO＆INPIT

9. 发明专利

CA2540968A1 PHOTOVOLTAIC ULTRAVIOLET SENSOR 未知
公开(公告)号：CA2540968A1
公开(公告)日：2007-06-26
申请号：CA2540968
申请日：2006-03-27
申请人： INC NAT UNIVERSITY IWATE UNIVE , IWATE PREFECTUAL GOVERNMENT , IWATE INFORMATION SYSTEM CORP
发明人： OHSHIMA ERIKO , TAKAHASHI KOHSUKE , HASEGAWA TATSUO , SUGIBUCHI MAYO , IZUMIDA FUKUNORI , GOTO SHUNSUKE , KASHIWABA YASUBE , ENDO HARUYUKI
IPC分类号： H01L31/0296 , G01J1/42
摘要： A photovoltaic ultraviolet sensor comprises a zinc oxide single crystal substrate. On the +c face of the zinc oxide single crystal substrate, an ultraviolet receiver is formed. The exemplary ultraviolet receiver includes a Schottky electrode which, when receiving ultraviolet rays, produces a voltage in cooperation with the zinc oxide single crystal substrate. The uitraviolet sensor does not have any sensitivity to t he visible rays. The ultraviolet sensor has a relatively fast response of several microseconds.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式