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    • 2. 发明申请
    • Optoelectronic Semiconductor Chip
    • 光电半导体芯片
    • US20140217460A1
    • 2014-08-07
    • US14240969
    • 2012-07-06
    • Ivar TångringWolfgang Schmid
    • Ivar TångringWolfgang Schmid
    • H01L33/62
    • H01L33/62H01L33/145H01L33/20H01L33/38H01L33/405H01L2224/48463
    • An optoelectronic semiconductor chip includes a semiconductor layer sequence having at least one active layer. Furthermore, the semiconductor chip has a top-side contact structure on a radiation main side of the semiconductor layer sequence and an underside contact structure on an underside situated opposite to the radiation main side. Furthermore, the semiconductor chip includes at last two trenches that extend from the radiation main side towards the underside. As seen in a plan view of the radiation main side, the top-side contact structure and the underside contact structure are arranged in a manner spaced apart from one another. Likewise as seen in a plan view of the radiation main side, the trenches are located between the top-side contact structure and the underside contact structure.
    • 光电子半导体芯片包括具有至少一个有源层的半导体层序列。 此外,半导体芯片在半导体层序列的辐射主侧上具有顶侧接触结构,在与辐射主侧相对的下侧具有下侧接触结构。 此外,半导体芯片包括从辐射主侧朝向下侧延伸的最后两个沟槽。 如在辐射主侧的平面图中看到的,顶侧接触结构和下侧接触结构以彼此间隔开的方式布置。 类似地,如在辐射主侧的平面图中看到的,沟槽位于顶侧接触结构和下侧接触结构之间。
    • 7. 发明申请
    • LIGHT-EMITTING DIODE CHIP AND METHOD FOR PRODUCING A LIGHT-EMITTING DIODE CHIP
    • 发光二极管芯片和生产发光二极管芯片的方法
    • US20130175573A1
    • 2013-07-11
    • US13809149
    • 2011-06-17
    • Bernd MayerWolfgang Schmid
    • Bernd MayerWolfgang Schmid
    • H01L33/26
    • H01L33/26H01L33/025H01L33/20H01L33/44H01L2933/0025
    • The invention relates to a light-emitting diode chip, comprising an n-type semiconductor layer (3), a p-type semiconductor layer (4), an active region (2) between the n-type semiconductor layer (3) and the p-type semiconductor layer (4), a lateral surface (14), which limits the n-type semiconductor layer (3), the p-type semiconductor layer (4) and the active region (2) in a lateral direction, and a doped region (1), in which a dopant is introduced into a semiconductor material of the light-emitting diode chip, and/or comprising a neutralised region (1), wherein the doped region (1) and/or the neutralised region (1) are formed at the lateral surface (14) at least in the region of the active region, and the light-emitting diode chip is intended to emit incoherent electromagnetic radiation during operation.
    • 本发明涉及一种发光二极管芯片,包括n型半导体层(3),p型半导体层(4),n型半导体层(3)和 p型半导体层(4),在n方向上限制n型半导体层(3),p型半导体层(4)和有源区域(2)的侧面(14),以及 掺杂区域(1),其中掺杂剂被引入到发光二极管芯片的半导体材料中,和/或包括中和区域(1),其中掺杂区域(1)和/或中和区域 至少在有源区域的区域中在侧表面(14)处形成1),并且发光二极管芯片旨在在操作期间发射不相干的电磁辐射。
    • 9. 发明申请
    • Access Protection Accessory for an Automation Network
    • 自动化网络的访问保护附件
    • US20120260305A1
    • 2012-10-11
    • US13440766
    • 2012-04-05
    • Hendrik GERLACHWolfgang Schmid
    • Hendrik GERLACHWolfgang Schmid
    • G06F21/00
    • H04L12/40006H04L63/0236H04L67/12H04L2012/4026
    • An automation network connected to an automation installation configured to perform an automation process executable in at least two states, where the access protection accessory comprises network ports, a digital storage medium configured to store at least first and second rules, and a processor configured to read the at least first and second rules, process the rules and receive and forward data via the network ports, and receive at least one signal comprising advice of a change in the state of the automation process. The first rules, in a first state of the automation process, define which received data are forwarded and which received data are not forwarded, and following reception of the at least one signal the second rules define which received data are forwarded and which received data are not forwarded.
    • 连接到自动化安装的自动化网络被配置为执行在至少两个状态中可执行的自动化过程,其中所述访问保护附件包括网络端口,配置为存储至少第一和第二规则的数字存储介质以及被配置为读取 所述至少第一和第二规则处理规则并经由网络端口接收和转发数据,并且接收至少一个包括自动化过程状态改变的建议的信号。 在自动化过程的第一状态中的第一规则定义哪个接收的数据被转发,哪个接收的数据不被转发,并且在接收至少一个信号之后,第二规则定义哪个接收的数据被转发以及哪些接收的数据是 不转发