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1. 发明申请

US20110005920A1 Low Temperature Deposition of Amorphous Thin Films 审中-公开
标题翻译：非晶薄膜的低温沉积
公开(公告)号：US20110005920A1
公开(公告)日：2011-01-13
申请号：US12502139
申请日：2009-07-13
申请人： Ivan Petrov Ivanov , Antoine Khoueir , Wei Tian , Paul E. Anderson , Lili Jia , Yongchul Ahn , Michael Xuefei Tang , Yang Dong
发明人： Ivan Petrov Ivanov , Antoine Khoueir , Wei Tian , Paul E. Anderson , Lili Jia , Yongchul Ahn , Michael Xuefei Tang , Yang Dong
IPC分类号： C23C14/35
CPC分类号： C23C14/0641 , C23C14/354 , C23C14/541 , H01J37/3408 , H01J37/3467
摘要： Various embodiments of the present invention are generally directed to an apparatus and method for low temperature physical vapor deposition (PVD) of an amorphous thin film layer of material onto a substrate. A PVD chamber is configured to support a substrate and has a cathode target with a layer of sputtering material thereon, an anode shield, and a magnetron assembly adjacent the target. A high impulse power magnetron sputtering (HiPIMS) power supply is coupled to the PVD chamber, the power supply having a charging circuit and a charge storage device. The power supply applies relatively high energy, low duty cycle pulses to the magnetron assembly to sputter, via self ionizing plasma, relatively low energy ions from the layer of sputtering material to deposit an amorphous thin film layer onto the substrate.
摘要翻译：本发明的各种实施方案通常涉及用于材料的非晶薄膜层的低温物理气相沉积（PVD）的衬底上的装置和方法。 PVD室被配置为支撑衬底并且具有阴极靶，其上具有溅射材料层，阳极屏蔽和与靶相邻的磁控管组件。高冲击功率磁控溅射（HiPIMS）电源耦合到PVD室，电源具有充电电路和电荷存储装置。电源对磁控管组件施加相当高的能量，低占空比脉冲，以通过自电离等离子体溅射来自溅射材料层的相对低能量的离子，以将非晶薄膜层沉积到衬底上。

2. 发明申请

US20120138884A1 PROGRAMMABLE METALLIZATION MEMORY CELL WITH PLANARIZED SILVER ELECTRODE 有权
公开(公告)号：US20120138884A1
公开(公告)日：2012-06-07
申请号：US13396731
申请日：2012-02-15
申请人： Wei Tian , Dexin Wang , Venugopalan Vaithyanathan , Yang Dong , Muralikrishnan Balakrishnan , Ivan Petrov Ivanov , Ming Sun , Dimitar V. Dimitrov
发明人： Wei Tian , Dexin Wang , Venugopalan Vaithyanathan , Yang Dong , Muralikrishnan Balakrishnan , Ivan Petrov Ivanov , Ming Sun , Dimitar V. Dimitrov
IPC分类号： H01L45/00
CPC分类号： B82Y10/00 , G11C13/0011 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/16
摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

3. 发明授权

US08309945B2 Programmable metallization memory cell with planarized silver electrode 有权
公开(公告)号：US08309945B2
公开(公告)日：2012-11-13
申请号：US13396731
申请日：2012-02-15
申请人： Wei Tian , Dexin Wang , Venugopalan Vaithyanathan , Yang Dong , Muralikrishnan Balakrishnan , Ivan Petrov Ivanov , Ming Sun , Dimitar Velikov Dimitrov
发明人： Wei Tian , Dexin Wang , Venugopalan Vaithyanathan , Yang Dong , Muralikrishnan Balakrishnan , Ivan Petrov Ivanov , Ming Sun , Dimitar Velikov Dimitrov
IPC分类号： H01L29/02
CPC分类号： B82Y10/00 , G11C13/0011 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/16
摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

4. 发明申请

US20100193758A1 PROGRAMMABLE METALLIZATION MEMORY CELL WITH PLANARIZED SILVER ELECTRODE 有权
标题翻译：具有平面化银电极的可编程金属化存储器单元
公开(公告)号：US20100193758A1
公开(公告)日：2010-08-05
申请号：US12362532
申请日：2009-01-30
申请人： Wei Tian , Dexin Wang , Venugopalan Vaithyanathan , Yang Dong , Muralikrishnan Balakrishnan , Ivan Petrov Ivanov , Ming Sun , Dimitar V. Dimitrov
发明人： Wei Tian , Dexin Wang , Venugopalan Vaithyanathan , Yang Dong , Muralikrishnan Balakrishnan , Ivan Petrov Ivanov , Ming Sun , Dimitar V. Dimitrov
IPC分类号： H01L47/00 , H01L29/66 , H01L21/20
CPC分类号： B82Y10/00 , G11C13/0011 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/16
摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.
摘要翻译：公开了具有平面化银电极的可编程金属化存储单元及其形成方法。可编程金属化存储单元包括第一金属触点和第二金属触点，离子导体固体电解质材料位于第一金属触点和第二金属触点之间，并且银合金掺杂电极将离子导体固体电解质材料与第一金属接触或第二金属接触，或银掺杂电极将离子导体固体电解质材料与第一金属接触分离。银电极包括银层和将银层与第一金属触点分开的金属种子层。

5. 发明授权

US08288254B2 Programmable metallization memory cell with planarized silver electrode 有权
公开(公告)号：US08288254B2
公开(公告)日：2012-10-16
申请号：US13368851
申请日：2012-02-08
申请人： Wei Tian , Dexin Wang , Venugopalan Vaithyanathan , Yang Dong , Muralikrishnan Balakrishnan , Ivan Petrov Ivanov , Ming Sun , Dimitar Velikov Dimitrov
发明人： Wei Tian , Dexin Wang , Venugopalan Vaithyanathan , Yang Dong , Muralikrishnan Balakrishnan , Ivan Petrov Ivanov , Ming Sun , Dimitar Velikov Dimitrov
IPC分类号： H01L21/20
CPC分类号： B82Y10/00 , G11C13/0011 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/16
摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

6. 发明申请

US20120142169A1 PROGRAMMABLE METALLIZATION MEMORY CELL WITH PLANARIZED SILVER ELECTRODE 有权
标题翻译：具有平面化银电极的可编程金属化存储器单元
公开(公告)号：US20120142169A1
公开(公告)日：2012-06-07
申请号：US13368851
申请日：2012-02-08
申请人： Wei Tian , Dexin Wang , Venugopalan Vaithyanathan , Yang Dong , Muralikrishnan Balakrishnan , Ivan Petrov Ivanov , Ming Sun , Dimitar V. Dimitrov
发明人： Wei Tian , Dexin Wang , Venugopalan Vaithyanathan , Yang Dong , Muralikrishnan Balakrishnan , Ivan Petrov Ivanov , Ming Sun , Dimitar V. Dimitrov
IPC分类号： H01L21/20
CPC分类号： B82Y10/00 , G11C13/0011 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/16
摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.
摘要翻译：公开了具有平面化银电极的可编程金属化存储单元及其形成方法。可编程金属化存储单元包括第一金属触点和第二金属触点，离子导体固体电解质材料位于第一金属触点和第二金属触点之间，并且银合金掺杂电极将离子导体固体电解质材料与第一金属接触或第二金属接触，或银掺杂电极将离子导体固体电解质材料与第一金属接触分离。银电极包括银层和将银层与第一金属触点分开的金属种子层。

7. 发明授权

US08134138B2 Programmable metallization memory cell with planarized silver electrode 有权
标题翻译：具有平面化银电极的可编程金属化存储单元
公开(公告)号：US08134138B2
公开(公告)日：2012-03-13
申请号：US12362532
申请日：2009-01-30
申请人： Tian Wei , Dexin Wang , Venugopalan Vaithyanathan , Yang Dong , Muralikrishnan Balakrishnan , Ivan Petrov Ivanov , Ming Sun , Dimitar Velikov Dimitrov
发明人： Tian Wei , Dexin Wang , Venugopalan Vaithyanathan , Yang Dong , Muralikrishnan Balakrishnan , Ivan Petrov Ivanov , Ming Sun , Dimitar Velikov Dimitrov
IPC分类号： H01L29/02
CPC分类号： B82Y10/00 , G11C13/0011 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/16
摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.
摘要翻译：公开了具有平面化银电极的可编程金属化存储单元及其形成方法。可编程金属化存储单元包括第一金属触点和第二金属触点，离子导体固体电解质材料位于第一金属触点和第二金属触点之间，并且银合金掺杂电极将离子导体固体电解质材料与第一金属接触或第二金属接触，或银掺杂电极将离子导体固体电解质材料与第一金属接触分离。银电极包括银层和将银层与第一金属触点分开的金属种子层。

8. 发明申请

US20130224476A1 INFRARED RADIATION ABSORBING ARTICLES AND METHOD OF MANUFACTURE 有权
标题翻译：红外辐射吸收制品及其制造方法
公开(公告)号：US20130224476A1
公开(公告)日：2013-08-29
申请号：US13681791
申请日：2012-11-20
申请人： Liping Zheng , Steven M. Gasworth , James E. Pickett , Haiying Wang , Zhen Liu , Queenie Fu , Yang Dong , Hongxia Xi
发明人： Liping Zheng , Steven M. Gasworth , James E. Pickett , Haiying Wang , Zhen Liu , Queenie Fu , Yang Dong , Hongxia Xi
IPC分类号： C09D5/32
CPC分类号： C09D5/32 , B82Y30/00 , C08G77/14 , C08G77/20 , C08G77/24 , C08K3/22 , C08K3/36 , C08K9/02 , C08K2003/2231 , C09D7/61 , C09D7/67 , C09D183/04 , C09D183/06 , C09D183/08 , Y10S977/773 , Y10T428/254
摘要： In an embodiment, a method for making an infrared radiation absorbing coating comprises: forming an ITO coating mixture comprising ITO and a first coating matrix, wherein the first coating matrix comprises the partial condensate of a silanol of the formula RnSi(OH)4-n, where n equals 1 or 2, and wherein R is selected from a C1-3 alkyl radical, a vinyl radical, a 3,3,3-trifluoropropyl radical, a gamma-glycidoxypropyl radical, and a gamma-methacryloxypropyl radical, wherein the ITO coating mixture is free of colloidal silica; forming a colloidal silica coating mixture comprising colloidal silica and a second coating matrix, wherein the second coating matrix comprises the partial condensate of a silanol of the formula RnSi(OH)4-n, where n equals 1 or 2, and wherein R is selected from an alkyl radical of 1 to 3 inclusive carbon atoms, a vinyl radical, a 3,3,3-trifluoropropyl radical, a gamma-glycidoxypropyl radical, and a gamma-methacryloxypropyl radical; and mixing the ITO coating mixture with the colloidal silica coating mixture to form a combined mixture. The combined mixture does not comprise a precipitate visible to the unaided eye after 2 weeks without stirring.
摘要翻译：在一个实施方案中，制备红外辐射吸收涂层的方法包括：形成包含ITO和第一涂层基质的ITO涂层混合物，其中第一涂层基质包含式RnSi（OH）4-n的硅烷醇的部分缩合物其中n等于1或2，并且其中R选自C 1-3烷基，乙烯基，3,3,3-三氟丙基，γ-缩水甘油氧基丙基和γ-甲基丙烯酰氧基丙基，其中 ITO涂层混合物不含胶体二氧化硅; 形成包含胶体二氧化硅和第二涂层基质的胶态二氧化硅涂层混合物，其中所述第二涂层基质包含式R n Si（OH）4-n的硅烷醇的部分缩合物，其中n等于1或2，并且其中R选自由1至3个包含碳原子的烷基，乙烯基，3,3,3-三氟丙基，γ-缩水甘油氧基丙基和γ-甲基丙烯酰氧基丙基; 并将ITO涂覆混合物与胶态二氧化硅涂层混合物混合以形成混合的混合物。组合的混合物在不搅拌的情况下不含有肉眼可见的2周后的沉淀物。

9. 发明授权

US07649089B2 Biodegradable oxidized cellulose esters and their uses as microspheres 失效
标题翻译：可生物降解的氧化纤维素酯及其用作微球体
公开(公告)号：US07649089B2
公开(公告)日：2010-01-19
申请号：US10975248
申请日：2004-10-28
申请人： Vijay Kumar , Yang Dong
发明人： Vijay Kumar , Yang Dong
IPC分类号： C08B3/00 , C08B3/16 , C08B3/04 , C08B3/08 , C08B3/06 , A61K31/715
CPC分类号： A61K9/1652 , A61K9/5042 , C08B3/00 , C08B15/00
摘要： A new cellulose excipient, OCCAE, suitable for use as a binder, filler, and/or disintegrant in the development of solid dosage forms and as a bodying agent or a drug carrier in the preparation of topical formulations is described. The cellulose excipient is formed by reacting an oxidized cellulose ester with an alcohol in the presence of a catalyst. The invention also describes the formation of controlled release microspheres using OCCAE and/or oxidized cellulose esters that may be used to control the release of drug in a patient over a time period of several hours to several days.
摘要翻译：描述了一种新的纤维素赋形剂OCCAE，其适于在制备固体剂型中作为粘合剂，填充剂和/或崩解剂，以及作为局部制剂制剂中的保护剂或药物载体。纤维素赋形剂通过在催化剂存在下使氧化的纤维素酯与醇反应而形成。本发明还描述了使用OCCAE和/或氧化的纤维素酯形成控制释放微球，其可以用于在数小时至数天的时间段内控制药物释放。

10. 发明授权

US07595392B2 Biodegradable oxidized cellulose esters 有权
公开(公告)号：US07595392B2
公开(公告)日：2009-09-29
申请号：US10007866
申请日：2001-12-06
申请人： Vijay Kumar , Yang Dong
发明人： Vijay Kumar , Yang Dong
IPC分类号： C08B3/00 , C08B3/06
CPC分类号： C08B3/00 , C08B15/00
摘要： The present invention relates to the preparation of a series of oxidized cellulose esters suitable for use as a drug carrier in the development of biodegradable controlled and/or sustained release pharmaceutical, agricultural, and veterinary compositions, such as films, compacts, microspheres, and pellets. The esters are prepared by acylation of oxidized cellulose having at least 3% carboxyl groups. The resulting oxidized cellulose esters are soluble in aqueous alkaline solutions, water, and a variety of organic solvents.

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