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1. 发明申请

US20110226280A1 PLASMA MEDIATED ASHING PROCESSES 审中-公开
标题翻译：等离子体介质吸附过程
公开(公告)号：US20110226280A1
公开(公告)日：2011-09-22
申请号：US13117488
申请日：2011-05-27
申请人： Ivan L. Berry , Carlo Waldfried , Shijian Luo , Orlando Escorcia
发明人： Ivan L. Berry , Carlo Waldfried , Shijian Luo , Orlando Escorcia
IPC分类号： B08B7/00 , B08B13/00 , C23F1/08
CPC分类号： H01L21/02101 , G03F7/427 , H01L21/31138
摘要： A plasma ashing process for removing photoresist, polymers and/or residues from a substrate comprises placing the substrate including the photoresist, polymers, and/or residues into a reaction chamber; generating a plasma from a gas mixture comprising oxygen gas (O2) and/or an oxygen containing gas; suppressing and/or reducing fast diffusing species in the plasma; and exposing the substrate to the plasma to selectively remove the photoresist, polymers, and/or residues from the substrate, wherein the plasma is substantially free from fast diffusing species.
摘要翻译：用于从基板去除光致抗蚀剂，聚合物和/或残留物的等离子体灰化处理包括将包括光致抗蚀剂，聚合物和/或残余物的基材放置在反应室中; 从包含氧气（O 2）和/或含氧气体的气体混合物产生等离子体; 抑制和/或减少等离子体中的快速扩散物质; 以及将所述衬底暴露于所述等离子体以选择性地从所述衬底去除所述光致抗蚀剂，聚合物和/或残留物，其中所述等离子体基本上不含快速扩散物质。

2. 发明授权

US4631704A Methods and devices for charged beam accessible data storage 失效
标题翻译：带电波束可访问数据存储的方法和设备
公开(公告)号：US4631704A
公开(公告)日：1986-12-23
申请号：US561747
申请日：1983-12-15
申请人： Ronald J. Lucas , Ivan L. Berry , John C. Wolfe
发明人： Ronald J. Lucas , Ivan L. Berry , John C. Wolfe
IPC分类号： G11B9/00 , G11B9/10 , G11C11/46
CPC分类号： G11B9/00 , G11B9/10
摘要： Charged beam accessible data storage methods and devices involve a storage medium having an array of protrusions formed on a thermally insulative, substantially charged beam transparent base. The protrusions, made of high contrast material, can be selectively melted by a charged beam, such as an electron beam, in order to decrease the protrusions' aspect ratio and to increase their energy absorptive action when scanned by a charged beam. Since the melted protrusions do not wet on the base, the protrusions quickly assume a spherical bead shape when melted due to favorable surface tension forces. The bi-level charged beam absorption characteristics of the melted and unmelted protrusions provide the two "on" or "off" stored data states.
摘要翻译：带电波束可访问数据存储方法和装置涉及存储介质，其具有形成在绝热的基本充电的光束透明基底上的突起阵列。由高对比度材料制成的凸起可以通过诸如电子束的带电束而被选择性地熔化，以便减少突起的纵横比并且通过带电束扫描时增加它们的能量吸收作用。由于熔融的突起不会在基体上湿润，所以当由于良好的表面张力而熔化时，突起部迅速呈现出球形的珠状。熔融和未熔化的突起的双层带电束吸收特性提供两个“开”或“关”存储的数据状态。

3. 发明授权

US08071451B2 Method of doping semiconductors 有权
标题翻译：掺杂半导体的方法
公开(公告)号：US08071451B2
公开(公告)日：2011-12-06
申请号：US12511737
申请日：2009-07-29
申请人： Ivan L. Berry
发明人： Ivan L. Berry
IPC分类号： H01L21/8236
CPC分类号： H01L21/223 , H01L21/228 , H01L29/42392 , H01L29/66795 , H01L29/66803
摘要： A method of doping a semiconductor body is provided herein. In one embodiment, a semiconductor body is exposed to an activated hydrogen gas for a predetermined time period and temperature. The activated hydrogen gas that is configured to react with a surface of a semiconductor body. The activated hydrogen gas breaks existing bonds in the substrate (e.g., silicon-silicon bonds), thereby forming a reactive layer comprising weakened (e.g., silicon-hydrogen (Si—H) bonds, silanol (Si—OH) bonds) and/or dangling bonds (e.g., dangling silicon bonds). The dangling bonds, in addition to the easily broken weakened bonds, comprise reactive sites that extend into one or more surfaces of the semiconductor body. A reactant (e.g., n-type dopant, p-type dopant) may then be introduced to contact the reactive layer of the semiconductor body. The reactant chemically bonds to reactive sites comprised within the reactive layer, thereby resulting in a doped layer within the semiconductor body comprising the reactant.
摘要翻译：本文提供掺杂半导体本体的方法。在一个实施例中，将半导体主体暴露于活化的氢气达预定时间段和温度。被配置为与半导体主体的表面反应的活化氢气。活化的氢气破坏衬底中的现有键（例如，硅 - 硅键），从而形成包含弱化（例如，硅 - 氢（Si-H）键，硅烷醇（Si-OH）键）和/或悬挂债券（如悬挂硅债券）。除了容易断裂的弱化键之外，悬挂键包括延伸到半导体本体的一个或多个表面的反应位点。然后可以引入反应物（例如，n型掺杂剂，p型掺杂剂）以接触半导体主体的反应层。反应物化学键合到包含在反应层内的反应性位点，由此导致包含反应物的半导体内部的掺杂层。

4. 发明授权

US09129778B2 Fluid distribution members and/or assemblies 有权
标题翻译：流体分配构件和/或组件
公开(公告)号：US09129778B2
公开(公告)日：2015-09-08
申请号：US13051713
申请日：2011-03-18
申请人： Armin Huseinovic , Ivan L. Berry
发明人： Armin Huseinovic , Ivan L. Berry
IPC分类号： H01J37/32 , C23C16/452 , C23C16/455
CPC分类号： H01J37/3244 , C23C16/452 , C23C16/45565 , C23C16/4558 , H01J37/32192 , H01J37/32357 , H01J37/32633
摘要： A fluid distribution member assembly for use in a substrate processing system includes a fluid distribution member having a central portion and a perimeter portion. The fluid distribution member defines at least one slot formed there-through and the at least one slot extends along a non-radial path configured to allow the central portion to expand and rotate with respect to the perimeter portion.
摘要翻译：用于衬底处理系统的流体分配构件组件包括具有中心部分和周边部分的流体分配构件。流体分配构件限定形成在其中的至少一个狭槽，并且所述至少一个狭槽沿着非径向路径延伸，所述非径向路径被构造成允许中心部分相对于周边部分膨胀和旋转。

5. 发明申请

US20110027957A1 METHOD OF DOPING SEMICONDUCTORS 有权
标题翻译：掺杂半导体的方法
公开(公告)号：US20110027957A1
公开(公告)日：2011-02-03
申请号：US12511737
申请日：2009-07-29
申请人： Ivan L. Berry
发明人： Ivan L. Berry
IPC分类号： H01L21/336 , H01L21/22
CPC分类号： H01L21/223 , H01L21/228 , H01L29/42392 , H01L29/66795 , H01L29/66803
摘要： A method of doping a semiconductor body is provided herein. In one embodiment, a semiconductor body is exposed to an activated hydrogen gas for a predetermined time period and temperature. The activated hydrogen gas that is configured to react with a surface of a semiconductor body. The activated hydrogen gas breaks existing bonds in the substrate (e.g., silicon-silicon bonds), thereby forming a reactive layer comprising weakened (e.g., silicon-hydrogen (Si—H) bonds, silanol (Si—OH) bonds) and/or dangling bonds (e.g., dangling silicon bonds). The dangling bonds, in addition to the easily broken weakened bonds, comprise reactive sites that extend into one or more surfaces of the semiconductor body. A reactant (e.g., n-type dopant, p-type dopant) may then be introduced to contact the reactive layer of the semiconductor body. The reactant chemically bonds to reactive sites comprised within the reactive layer, thereby resulting in a doped layer within the semiconductor body comprising the reactant.
摘要翻译：本文提供掺杂半导体本体的方法。在一个实施例中，将半导体主体暴露于活化的氢气达预定时间段和温度。被配置为与半导体主体的表面反应的活化氢气。活化的氢气破坏衬底中的现有键（例如，硅 - 硅键），从而形成包含弱化（例如，硅 - 氢（Si-H）键，硅烷醇（Si-OH）键）和/或悬挂债券（如悬挂硅债券）。除了容易断裂的弱化键之外，悬挂键包括延伸到半导体本体的一个或多个表面的反应位点。然后可以引入反应物（例如，n型掺杂剂，p型掺杂剂）以接触半导体主体的反应层。反应物化学键合到包含在反应层内的反应性位点，由此导致包含反应物的半导体内部的掺杂层。

6. 发明申请

US20080128621A1 Use of ion induced luminescence (IIL) as feedback control for ion implantation 有权
标题翻译：使用离子诱导发光（IIL）作为离子注入的反馈控制
公开(公告)号：US20080128621A1
公开(公告)日：2008-06-05
申请号：US11633694
申请日：2006-12-04
申请人： Ivan L. Berry
发明人： Ivan L. Berry
IPC分类号： G01J5/00 , G01J1/32
CPC分类号： G01N23/2255 , G01N2223/6116 , H01J37/244 , H01J37/304 , H01J37/3171 , H01J2237/2443 , H01J2237/2445 , H01J2237/24507 , H01J2237/24514
摘要： An ion implantation system utilizing detected ion induced luminescence as feedback control that comprises, a wafer, a spectrometer, a photodetector, an ion source generator, wherein the ion source generator is configured to implant the wafer with ions, and the photodetector is configured to detect ion induced luminescence both on and off the wafer.
摘要翻译：使用检测离子诱导发光作为反馈控制的离子注入系统，其包括晶片，光谱仪，光电检测器，离子源发生器，其中离子源发生器被配置为用离子植入晶片，并且光电检测器被配置为检测离子诱导的晶体上和下的发光。

7. 发明申请

US20110180097A1 THERMAL ISOLATION ASSEMBLIES FOR WAFER TRANSPORT APPARATUS AND METHODS OF USE THEREOF 审中-公开
标题翻译：用于移动运输装置的热隔离组件及其使用方法
公开(公告)号：US20110180097A1
公开(公告)日：2011-07-28
申请号：US12694597
申请日：2010-01-27
申请人： Armin Huseinovic , Ivan L. Berry
发明人： Armin Huseinovic , Ivan L. Berry
IPC分类号： G03F7/42
CPC分类号： G03F7/427 , H01L21/67126
摘要： An apparatus for treating a workpiece, the apparatus comprising a first chamber configured to treat the workpiece at an elevated temperature, the first chamber including an opening for receiving the workpiece; a second chamber in operative communication with the first chamber, the second chamber including an opening for transferring the workpiece to and from the first chamber, wherein the first chamber opening is aligned with the second chamber opening, and wherein a selected one of the first and the second chambers comprises a gate valve configured to selectively open and close access to the first and second chamber openings; and a thermal isolation plate formed of a material effective to substantially prevent heat transfer from the first chamber to the second chamber, wherein the thermal isolation plate is disposed about the first and second chamber openings in a sealing relationship.
摘要翻译：一种用于处理工件的设备，所述设备包括构造成在升高的温度下处理所述工件的第一室，所述第一室包括用于接收所述工件的开口; 与所述第一腔室操作连通的第二腔室，所述第二腔室包括用于将所述工件传送到所述第一腔室和从所述第一腔室传送所述工件的开口，其中所述第一腔室开口与所述第二腔室开口对准，并且其中所述第一和第所述第二腔室包括构造成选择性地打开和关闭进入所述第一和第二腔室开口的闸阀; 以及热隔离板，其由有效基本上防止从第一室到第二室的热传递的材料形成，其中热隔离板以密封关系设置在第一和第二室开口周围。

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