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1. 发明授权

US4602009A Corticoid derivatives and process for production thereof 失效
标题翻译：皮质激素衍生物及其生产方法
公开(公告)号：US4602009A
公开(公告)日：1986-07-22
申请号：US645100
申请日：1984-08-28
申请人： Issei Nitta , Akira Maruyama , Kenichiro Nakao , Motoyoshi Miyake , Hiroaki Ueno
发明人： Issei Nitta , Akira Maruyama , Kenichiro Nakao , Motoyoshi Miyake , Hiroaki Ueno
IPC分类号： A61K31/57 , A61P5/38 , C07J5/00 , C07J7/00 , C07J21/00 , C07J31/00 , A61K31/56
CPC分类号： C07J5/0053 , C07J21/00 , C07J31/006 , C07J5/0076 , C07J7/0085
摘要： Novel corticoid 17.alpha.-alkoxycarbonyl carboxylate derivatives are disclosed. These derivatives have strong topical anti-inflammatory activity and extremely weak systemic adverse reactions and are useful for the treatment of acute and chronic eczema, eczema seborrhoicorum, contact dermatitis, atopic dermatitis, asthma, etc.
摘要翻译：公开了新型皮质激素17α-烷氧基羰基羧酸酯衍生物。这些衍生物具有强烈的局部抗炎活性和非常弱的全身不良反应，可用于治疗急性和慢性湿疹，皮脂溢性湿疹，接触性皮炎，特应性皮炎，哮喘等。

2. 发明申请

US20060149075A1 Crystals of 5-[{6-(2-fluorobenzyl)oxy-2-naphthyl}methyl]-2,4-thiazolidinedione 审中-公开
标题翻译： 5 - [{6-（2-氟苄基）氧基-2-萘基}甲基] -2,4-噻唑烷二酮的晶体
公开(公告)号：US20060149075A1
公开(公告)日：2006-07-06
申请号：US11357208
申请日：2006-02-21
申请人： Takayuki Oe , Hiroaki Ueno , Akira Maruyama , Katsuhiko Masuda
发明人： Takayuki Oe , Hiroaki Ueno , Akira Maruyama , Katsuhiko Masuda
IPC分类号： C07D277/34
CPC分类号： C07D277/34
摘要： The invention relates to type A crystal of 5-[{6-(2-fluorobenzyl)oxy-2-naphtyl}methyl]-2,4-thiazolidinedione characterized to have characteristic absorption peaks (2θ) at 11.5°±0.3°, 14.5°±0.2°, 16.2°±0.3°, 17.0°±0.3°, 17.7°±0.2°, 18.6°±0.3°, 19.1°±0.2°, 21.3°±0.4°, 22.4°±0.5°, 25.7°±1.5° and 28.3°±10.5° in a powder X-ray diffraction pattern, and also to a method for preparation thereof, and a pharmaceutical composition comprising the same. The crystal is excellent in stability, and has advantages in handling, storage, and pharmaceutical preparation. The invention also relates to type B, C and D crystals of said compound.
摘要翻译：本发明涉及5 - [{6-（2-氟苄基）氧基-2-萘基}甲基] -2,4-噻唑烷二酮的A型晶体，其特征在于在11.5°±0.3°，14.5°具有特征吸收峰（2θ） °±0.2°，16.2°±0.3°，17.0°±0.3°，17.7°±0.2°，18.6°±0.3°，19.1°±0.2°，21.3°±0.4°，22.4°±0.5°，25.7°± 在粉末X射线衍射图中为1.5°和28.3°±10.5°，以及其制备方法，以及包含该方法的药物组合物。该晶体的稳定性优异，在处理，储存和制药方面具有优势。本发明还涉及所述化合物的B，C和D型晶体。

3. 发明授权

US06541493B1 Crystals of 5-[{6-(2-fluorobenzyl)oxy-2-naphthyl}methyl]-2,4-thiazolidinedione 失效
标题翻译： 5 - [{6-（2-氟苄基）氧基-2-萘基}甲基] -2,4-噻唑烷二酮的晶体
公开(公告)号：US06541493B1
公开(公告)日：2003-04-01
申请号：US09856295
申请日：2001-08-20
申请人： Takayuki Oe , Hiroaki Ueno , Akira Maruyama , Katsuhiko Masuda
发明人： Takayuki Oe , Hiroaki Ueno , Akira Maruyama , Katsuhiko Masuda
IPC分类号： C07D27734
CPC分类号： C07D277/34
摘要： The invention relates to type A crystal of 5-[{6-(2-fluorobenzyl)oxy-2-naphthyl}methyl]-2,4-thiazolidinedione characterized to have characteristic absorption peaks (2&thgr;) at 11.5°±0.3°, 14.5°±0.2°, 16.2°±0.3°, 17.0°±0.3°, 17.7°±0.2°, 18.6°±0.3°, 19.1°±0.2°, 21.3°±0.4°, 22.4°±0.5°, 25.7°±0.5° and 28.3°±0.5° in a powder X-ray diffraction pattern, and also to a method for preparation thereof, and a pharmaceutical composition comprising the same. The crystal is excellent in stability, and has advantages in handling, storage, and pharmaceutical preparation. The invention also relates to type B, C and D crystals of said compound.
摘要翻译：本发明涉及5 - [{6-（2-氟苄基）氧基-2-萘基}甲基] -2,4-噻唑烷二酮的A型晶体，其特征在于在11.5°±0.3°，14.5°具有特征吸收峰（2θ） °±0.2°，16.2°±0.3°，17.0°±0.3°，17.7°±0.2°，18.6°±0.3°，19.1°±0.2°，21.3°±0.4°，22.4°±0.5°，25.7°± 粉末X射线衍射图中为0.5°和28.3°±0.5°，以及其制备方法，以及包含该方法的药物组合物。该晶体的稳定性优异，在处理，储存和制药方面具有优势。本发明还涉及所述化合物的B，C和D型晶体。

4. 发明申请

US20140152267A1 BATTERY SYSTEMS AND REMAINING CAPACITY MANAGEMENT SYSTEMS FOR SECONDARY BATTERY 有权
标题翻译：电池系统和二次电池剩余容量管理系统
公开(公告)号：US20140152267A1
公开(公告)日：2014-06-05
申请号：US14131571
申请日：2012-06-07
申请人： Yoichi Hashimoto , Hiroaki Ueno
发明人： Yoichi Hashimoto , Hiroaki Ueno
IPC分类号： H02J7/00
CPC分类号： H02J7/0029 , H01M10/48 , H01M2010/4271 , H01M2010/4278 , H01M2200/00 , H02J7/0047 , H02J2007/005
摘要： A battery system according to the present invention includes a secondary battery; a battery control unit that controls charging and discharging of said secondary battery; and a charging/discharging management unit that controls the charging and discharging of said secondary battery through said battery control unit, wherein said battery control unit, if an abnormality occurred during operation of said battery control unit, transmits remaining capacity data that represent a remaining capacity of said secondary battery that remained immediately before the abnormality occurred to said charging/discharging management unit.
摘要翻译：根据本发明的电池系统包括二次电池; 电池控制单元，其控制所述二次电池的充电和放电; 以及充电/放电管理单元，其通过所述电池控制单元控制所述二次电池的充电和放电，其中所述电池控制单元如果在所述电池控制单元的操作期间发生异常，则发送表示剩余容量的剩余容量数据的所述二次电池在所述充电/放电管理单元发生异常之前立即停止。

5. 发明授权

US07656010B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07656010B2
公开(公告)日：2010-02-02
申请号：US11898958
申请日：2007-09-18
申请人： Tomohiro Murata , Hiroaki Ueno , Hidetoshi Ishida , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Tomohiro Murata , Hiroaki Ueno , Hidetoshi Ishida , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L23/58
CPC分类号： H01L29/7787 , H01L23/367 , H01L23/3677 , H01L29/2003 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.
摘要翻译：半导体器件包括：半导体层; 形成在与半导体层接触的半导体层上的至少一个电极; 以及覆盖半导体层和电极的顶表面的至少一部分的钝化膜，以保护半导体层并由多个子膜形成。钝化膜包括由氮化铝制成的第一子膜。

6. 发明申请

US20080130868A1 Scrambler and storage device using the same 审中-公开
标题翻译：扰码器和使用相同的存储设备
公开(公告)号：US20080130868A1
公开(公告)日：2008-06-05
申请号：US11897476
申请日：2007-08-30
申请人： Hiroaki Ueno
发明人： Hiroaki Ueno
IPC分类号： H04K1/00
CPC分类号： H04L1/00 , H04L25/4906
摘要： A scrambler that facilitates encryption of data to be recorded and a magnetic storage device using this are provided. The scrambler has a shift register of a plurality of stages and an exclusive OR circuit that finds the exclusive OR of the logic of the stages of the shift register that correspond to a single generating polynomial. The output of the exclusive OR circuit is arranged to be fed back to the initial stage of the shift register. At least this single generating polynomial is an arbitrary generating polynomial. The drive number, in binary form, that identifies the storage device, is set as the initial value of the shift register of a plurality of stages.
摘要翻译：提供了促进要记录的数据的加密的扰码器和使用该数据的磁存储装置。加扰器具有多级的移位寄存器和异或电路，该异或电路找到与单个生成多项式相对应的移位寄存器的级的逻辑的异或。异或电路的输出被布置为反馈到移位寄存器的初始阶段。至少该单个生成多项式是任意生成多项式。以二进制形式识别存储设备的驱动器号被设置为多级的移位寄存器的初始值。

7. 发明申请

US20070170463A1 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20070170463A1
公开(公告)日：2007-07-26
申请号：US11647218
申请日：2006-12-29
申请人： Hiroaki Ueno , Manabu Yanagihara , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Hiroaki Ueno , Manabu Yanagihara , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L31/00
CPC分类号： H01L29/7783 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L29/432 , H01L29/452 , H01L29/7787
摘要： A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum.
摘要翻译：氮化物半导体器件包括：由第一氮化物半导体制成的第一半导体层; 第二半导体层，其形成在第一半导体层的主表面上并且由具有比第一氮化物半导体的带隙宽的第二氮化物半导体构成; 选择性地形成在所述第二半导体层的上部并且由上述第二半导体层的上部制成的具有p型导电性的第三氮化物半导体的控制层; 源极和漏极，形成在控制层的相应侧上的第二半导体层上; 形成在所述控制层上的栅电极; 以及形成在与所述主表面相对的所述第一半导体层的表面上的第四半导体层，所述第四半导体层相对于所述第一氮化物半导体具有价带中的势垒，并且由包含铝的第四氮化物半导体制成。

8. 发明申请

US20070126026A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20070126026A1
公开(公告)日：2007-06-07
申请号：US11593016
申请日：2006-11-06
申请人： Hiroaki Ueno , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
发明人： Hiroaki Ueno , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
IPC分类号： H01L31/00
CPC分类号： H01L29/7787 , H01L23/3732 , H01L29/2003 , H01L29/66462 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a first group-III nitride semiconductor layer formed on a substrate; a second group-III nitride semiconductor layer made of a single layer or two or more layers, formed on the first group-III nitride semiconductor layer, and acting as a barrier layer; a source electrode, a drain electrode, and a gate electrode formed on the second group-III nitride semiconductor layer, the gate electrode controlling a current flowing between the source and drain electrodes; and a heat radiation film with high thermal conductivity which covers, as a surface passivation film, the entire surface other than a bonding pad.
摘要翻译：半导体器件包括：形成在衬底上的第一III族氮化物半导体层; 形成在第一III族氮化物半导体层上并且用作阻挡层的由单层或两层或更多层制成的第二III族氮化物半导体层; 形成在所述第二III族氮化物半导体层上的源电极，漏电极和栅极，所述栅电极控制在所述源极和漏极之间流动的电流; 以及具有高导热性的热辐射膜，其覆盖除了焊盘之外的整个表面作为表面钝化膜。

9. 发明授权

US06717986B1 Error propagation detection and control method, and memory device using the same 失效
标题翻译：误差传播检测和控制方法，以及使用其的存储器件
公开(公告)号：US06717986B1
公开(公告)日：2004-04-06
申请号：US09442555
申请日：1999-11-18
申请人： Hiroaki Ueno
发明人： Hiroaki Ueno
IPC分类号： H03H730
CPC分类号： H04L25/03057 , H04L2025/0349
摘要： An error propagation detection method and apparatus for use in decision feedback equalization type detection is disclosed, with which it is possible to detect error propagation even when a specific code conversion rule is satisfied in an MDFE system. If the input signal of a comparative decider be a binary signal a(k) expressed as ±1, an error signal ev(k) expressed by ev(k)=[y(k)−Ideal y(k)] sign[a(k)] is determined using a(k−1)≠a(k+1) as an error computation condition. The error signal ev(k) thus determined is checked to see whether it exceeds a specific value. If so, the slice level of the comparative decider is controlled to a corresponding offset value.
摘要翻译：公开了一种在判决反馈均衡型检测中使用的误差传播检测方法和装置，即使在MDFE系统中满足特定代码转换规则的情况下也可以检测误差传播。如果比较判别器的输入信号为表示为±1的二进制信号a（k），则由ev（k）= [y（k）-Ideal y（k）]表示的误差信号ev（k）（k）]使用（k-1）<> a（k + 1）作为误差计算条件来确定。检查如此确定的误差信号ev（k）以查看其是否超过特定值。如果是这样，则比较判定器的限幅电平被控制到相应的偏移值。

10. 发明授权

US6118611A Signal reproducing circuit adapted to head utilizing magneto-resistive effect 失效
标题翻译：信号再现电路适用于磁头利用磁阻效应
公开(公告)号：US6118611A
公开(公告)日：2000-09-12
申请号：US948209
申请日：1997-10-09
申请人： Hidekazu Shibasaki , Hiroaki Ueno , Ken Yakuwa
发明人： Hidekazu Shibasaki , Hiroaki Ueno , Ken Yakuwa
IPC分类号： G11B5/00 , G11B5/02 , G11B19/02 , G11B5/09
CPC分类号： G11B5/02 , G11B19/02 , G11B2005/0016 , G11B2005/0018
摘要： A signal reproducing circuit for a magneto-resistive effect head includes a constant current source for supplying a sense current to an MR head in a read state, first constant current sources for supplying first constant currents to a pair of reproduction transistors in the read state, and a capacitor connected between the emitters of the transistors. Furthermore, second constant current sources for supplying second constant currents are connected in parallel with the first constant current sources. Control is given so that when switching an idle state to the read state is commanded, the second constant current sources remain on for a given period of time. Owing to this circuitry, a transient period during which the idle state is switched to the read state or a transient period during which heads are switched in the read state can be shortened to a great extent. Consequently, superposition of an unwanted offset component on a reproduced signal can be suppressed, and a loss in data-handling capacity can be minimized.
摘要翻译：用于磁阻效应头的信号再现电路包括用于在读取状态下向MR磁头提供感测电流的恒流源，用于在读取状态下向一对再现晶体管提供第一恒定电流的第一恒定电流源，以及连接在晶体管的发射极之间的电容器。此外，用于提供第二恒定电流的第二恒流源与第一恒定电流源并联连接。给出控制，使得当将空闲状态切换到读取状态时，第二恒定电流源保持打开一段给定的时间。由于该电路，可以在很大程度上缩短空闲状态切换到读取状态的过渡时段或读取状态期间磁头切换的过渡时段。因此，可以抑制再现信号上的不需要的偏移分量的叠加，并且可以最小化数据处理能力的损失。

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