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1. 发明授权

US07959731B2 Method for producing semiconductor wafer 有权
标题翻译：半导体晶片的制造方法
公开(公告)号：US07959731B2
公开(公告)日：2011-06-14
申请号：US11665977
申请日：2005-11-02
申请人： Isao Yokokawa , Hiroji Aga , Kiyoshi Mitani
发明人： Isao Yokokawa , Hiroji Aga , Kiyoshi Mitani
IPC分类号： C30B25/22
CPC分类号： H01L21/26506 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02664 , H01L21/76254 , Y10S117/915
摘要： A method for producing a semiconductor wafer, including epitaxially growing a Si1-XGeX layer (0
摘要翻译：一种制造半导体晶片的方法，包括在硅单晶晶片的表面上外延生长Si1-XGeX层（0

2. 发明申请

US20060051945A1 Method for manufacturing soi wafer and soi wafer 有权
标题翻译：制造硅晶片和硅晶片的方法
公开(公告)号：US20060051945A1
公开(公告)日：2006-03-09
申请号：US10544374
申请日：2004-02-13
申请人： Isao Yokokawa , Hiroji Aga , Kiyotaka Takano , Kiyoshi Mitani
发明人： Isao Yokokawa , Hiroji Aga , Kiyotaka Takano , Kiyoshi Mitani
IPC分类号： H01L21/425 , H01L21/22
CPC分类号： H01L21/76243 , H01L21/26533
摘要： The present invention provides a method of producing an SOI wafer, comprising at least steps of forming an oxygen ion-implanted layer by implanting oxygen ions into a silicon wafer from one main surface thereof, subjecting the silicon wafer to oxide film-forming heat treatment to convert the oxygen ion-implanted layer into a buried oxide film, and thereby producing an SOI wafer having an SOI layer on the buried oxide film, wherein when the buried oxide film is formed in the silicon wafer, the buried oxide film is formed so that a thickness thereof is thicker than a thickness of the buried oxide film which the SOI wafer to be produced has, and thereafter the silicon wafer in which the thicker buried oxide film is formed is subjected to a heat treatment to reduce the thickness of the buried oxide film. Thereby, there can be provided a method of producing an SOI wafer in which a high quality SOI wafer having a buried oxide film of which a film thickness is thin and perfectness is high and an SOI layer of which crystallinity and surface quality are extremely good can be produced by using SIMOX method.
摘要翻译：本发明提供一种制造SOI晶片的方法，其至少包括通过从其一个主表面将氧离子注入硅晶片来形成氧离子注入层的步骤，将硅晶片进行氧化膜形成热处理将氧离子注入层转换为埋入氧化膜，由此在埋入氧化膜上制造具有SOI层的SOI晶片，其中，当在硅晶片中形成掩埋氧化膜时，形成掩埋氧化膜，使得其厚度比所制造的SOI晶片的埋入氧化膜的厚度厚，然后对其中形成较厚掩埋氧化膜的硅晶片进行热处理，以减小掩埋氧化物的厚度电影。因此，可以提供一种制造SOI晶片的方法，其中具有膜厚度薄且完整性高的掩埋氧化膜的高质量SOI晶片和结晶度和表面质量非常好的SOI层可以使用SIMOX法生产。

3. 发明申请

US20050118789A1 Method of producing soi wafer and soi wafer 审中-公开
标题翻译：生产硅晶片和硅片的方法
公开(公告)号：US20050118789A1
公开(公告)日：2005-06-02
申请号：US10507175
申请日：2003-12-25
申请人： Hiroji Aga , Isao Yokokawa , Kiyotaka Takano , Kiyoshi Mitani
发明人： Hiroji Aga , Isao Yokokawa , Kiyotaka Takano , Kiyoshi Mitani
IPC分类号： H01L21/02 , H01L21/265 , H01L21/762 , H01L27/12 , H01L21/30 , H01L21/46
CPC分类号： H01L21/26533 , H01L21/76254
摘要： The present invention relates to a method of producing an SOI wafer in which an SOI layer is formed on a buried oxide film by forming an oxide film on a surface of at least one of a bond wafer and a base wafer, bonding the bond wafer to the base wafer through the formed oxide film, and making the bond wafer into a thin film, wherein after the oxide film is formed so that a total thickness of the oxide film formed on the surface of at least one of the bond wafer and the base wafer is thicker than a thickness of the buried oxide film that the SOI wafer to be produced has, the bond wafer is bonded to the base wafer through the formed oxide film, the bond wafer is made into a thin film to form an SOI layer, and thereafter, an obtained bonded wafer is subjected to heat treatment to reduce a thickness of the buried oxide film. Thereby, there can be provided a method of producing an SOI wafer in which blisters and voids are not generated even if the thickness of the buried oxide film is thinned, and its SOI layer has extremely good crystallinity.
摘要翻译：本发明涉及一种制造SOI晶片的方法，其中通过在接合晶片和基底晶片中的至少一个的表面上形成氧化膜，在掩埋氧化膜上形成SOI层，将接合晶片接合到通过形成的氧化膜的基底晶片，并将接合晶片制成薄膜，其中在形成氧化物膜之后，使得形成在至少一个接合晶片和基底的表面上的氧化膜的总厚度晶片比所制造的SOI晶片的埋入氧化膜的厚度厚，通过形成的氧化膜将接合晶片接合到基底晶片，将接合晶片制成薄膜以形成SOI层，然后，对获得的接合晶片进行热处理以减小掩埋氧化膜的厚度。因此，可以提供一种制造SOI晶片的方法，其中即使掩埋氧化膜的厚度变薄也不会产生起泡和空隙，并且其SOI层具有非常好的结晶度。

4. 发明申请

US20080138959A1 Method For Producing Semiconductor Wafer 有权
标题翻译：生产半导体晶圆的方法
公开(公告)号：US20080138959A1
公开(公告)日：2008-06-12
申请号：US11665977
申请日：2005-11-02
申请人： Isao Yokokawa , Hiroji Aga , Kiyoshi Mitani
发明人： Isao Yokokawa , Hiroji Aga , Kiyoshi Mitani
IPC分类号： H01L21/46
CPC分类号： H01L21/26506 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02664 , H01L21/76254 , Y10S117/915
摘要： The present invention is a method for producing a semiconductor wafer, comprising: at least epitaxially growing a Si1-XGeX layer (0
摘要翻译：本发明是一种用于制造半导体晶片的方法，其包括：至少外延生长Si 1-X 1 Ge x X 1层（0

5. 发明授权

US07524744B2 Method of producing SOI wafer and SOI wafer 有权
标题翻译：制造SOI晶圆和SOI晶圆的方法
公开(公告)号：US07524744B2
公开(公告)日：2009-04-28
申请号：US10544374
申请日：2004-02-13
申请人： Isao Yokokawa , Hiroji Aga , Kiyotaka Takano , Kiyoshi Mitani
发明人： Isao Yokokawa , Hiroji Aga , Kiyotaka Takano , Kiyoshi Mitani
IPC分类号： H01L21/425
CPC分类号： H01L21/76243 , H01L21/26533
摘要： The present invention provides a method of producing an SOI wafer, comprising at least steps of forming an oxygen ion-implanted layer by implanting oxygen ions into a silicon wafer from one main surface thereof, subjecting the silicon wafer to oxide film-forming heat treatment to convert the oxygen ion-implanted layer into a buried oxide film, and thereby producing an SOI wafer having an SOI layer on the buried oxide film, wherein when the buried oxide film is formed in the silicon wafer, the buried oxide film is formed so that a thickness thereof is thicker than a thickness of the buried oxide film which the SOI wafer to be produced has, and thereafter the silicon wafer in which the thicker buried oxide film is formed is subjected to a heat treatment to reduce the thickness of the buried oxide film. Thereby, there can be provided a method of producing an SOI wafer in which a high quality SOI wafer having a buried oxide film of which a film thickness is thin and perfectness is high and an SOI layer of which crystallinity and surface quality are extremely good can be produced by using SIMOX method.
摘要翻译：本发明提供一种制造SOI晶片的方法，其至少包括通过从其一个主表面将氧离子注入硅晶片来形成氧离子注入层的步骤，将硅晶片进行氧化膜形成热处理将氧离子注入层转换为埋入氧化膜，由此在埋入氧化膜上制造具有SOI层的SOI晶片，其中，当在硅晶片中形成掩埋氧化膜时，形成掩埋氧化膜，使得其厚度比所制造的SOI晶片的埋入氧化膜的厚度厚，然后对其中形成较厚掩埋氧化膜的硅晶片进行热处理，以减小掩埋氧化物的厚度电影。因此，可以提供一种制造SOI晶片的方法，其中具有膜厚度薄且完整性高的掩埋氧化膜的高品质SOI晶片和结晶度和表面质量非常好的SOI层使用SIMOX法生产。

6. 发明申请

US20070054459A1 SOI wafer and method for producing the same 审中-公开
标题翻译： SOI晶片及其制造方法
公开(公告)号：US20070054459A1
公开(公告)日：2007-03-08
申请号：US11593009
申请日：2006-11-06
申请人： Hiroji Aga , Kiyoshi Mitani
发明人： Hiroji Aga , Kiyoshi Mitani
IPC分类号： H01L21/8222
CPC分类号： H01L21/76254
摘要： The present invention provides a SOI wafer produced by an ion implantation delamination method wherein a width of a SOI island region in a terrace portion generated in an edge portion of the SOI wafer where a surface of a base wafer is exposed is narrower than 1 mm and a density of pit-shaped defects having a size of 0.19 μm or more existing in a surface of a SOI layer detected by a LPD inspection is 1 counts/cm2 or less, and also provides a method for producing the SOI wafer. Thereby, there is provided a SOI wafer produced by an ion implantation delamination method wherein generation of SOI islands generated in delamination can be suppressed and a defect density of LPDs existing in a surface of the SOI wafer can be reduced, and a method for producing the same, so that device failure can be reduced.
摘要翻译：本发明提供一种通过离子注入分层方法制造的SOI晶片，其中在SOI晶片的边缘部分中产生的露台部分中的SOI岛区域的宽度基底晶片暴露的距离窄于1mm，存在于通过LPD检查检测的SOI层的表面中的具有0.19μm以上的尺寸的凹坑状缺陷的密度为1个/ cm 2以下，并且还提供了一种用于生产SOI晶片。因此，提供了通过离子注入分层方法制造的SOI晶片，其中可以抑制在分层中产生的SOI岛的产生，并且可以减少存在于SOI晶片的表面中的LPD的缺陷密度，以及制造相同，从而可以减少设备故障。

7. 发明授权

US06238990B1 Method for heat treatment of SOI wafer and SOI wafer heat-treated by the method 有权
标题翻译：通过该方法对SOI晶片和SOI晶片进行热处理的方法
公开(公告)号：US06238990B1
公开(公告)日：2001-05-29
申请号：US09185901
申请日：1998-11-04
申请人： Hiroji Aga , Norihiro Kobayashi , Kiyoshi Mitani
发明人： Hiroji Aga , Norihiro Kobayashi , Kiyoshi Mitani
IPC分类号： H02L21336
CPC分类号： H01L21/3226 , H01L21/324 , H01L21/76256
摘要： A method for heat-treating an SOI wafer in a reducing atmosphere, wherein the SOI wafer is heat-treated through use of a rapid thermal annealer at a temperature within the range of 1100° C. to 1300° C. for 1 sec to 60 sec. The reducing atmosphere is preferably an atmosphere of 100% hydrogen or a mixed gas atmosphere containing hydrogen and argon. The heat treatment is preferably performed for 1 sec to 30 sec. The method eliminates COPs in an SOI layer of an SOI wafer in accordance with a hydrogen annealing method, while preventing etching of the SOI layer and a buried oxide layer.
摘要翻译：一种用于在还原气氛中对SOI晶片进行热处理的方法，其中通过使用快速热退火炉在1100℃至1300℃的温度范围内对SOI晶片进行热处理1秒至60秒秒还原气氛优选为100％氢气或含有氢气和氩气的混合气体气氛。优选进行1秒〜30秒的热处理。该方法根据氢退火方法消除SOI晶片的SOI层中的COP，同时防止SOI层和掩埋氧化物层的蚀刻。

8. 发明授权

US5998281A SOI wafer and method for the preparation thereof 失效
标题翻译： SOI晶片及其制备方法
公开(公告)号：US5998281A
公开(公告)日：1999-12-07
申请号：US698457
申请日：1996-08-15
申请人： Hiroji Aga , Kiyoshi Mitani , Masatake Katayama
发明人： Hiroji Aga , Kiyoshi Mitani , Masatake Katayama
IPC分类号： H01L21/20 , H01L21/762
CPC分类号： H01L21/76251 , H01L21/2007 , Y10S148/012 , Y10S438/977
摘要： Proposed is an improvement in the process for the preparation of an SOI wafer comprising the steps of: forming an oxidized surface film on the mirror-polished surface of a first mirror-polished semiconductor silicon wafer as the base wafer; forming a doped layer with a dopant in a high concentration on the mirror-polished surface of a second mirror-polished semiconductor silicon wafer as the bond wafer; bringing the base wafer and the bond wafer into contact each with the other at the oxidized surface film and the doped layer; and subjecting the thus contacted semiconductor silicon wafers to a heat treatment to effect integral bonding thereof into a precursor of an SOI wafer. The improvement of the invention is accomplished by polishing the surface of the doped layer on the bond wafer before the base wafer and the bond wafer are joined by contacting at the oxidized surface film and the doped layer so that a great improvement can be obtained in the bonding strength between layers.
摘要翻译：提出了制备SOI晶片的方法的改进，包括以下步骤：在作为基底晶片的第一镜面抛光半导体硅晶片的镜面抛光表面上形成氧化的表面膜; 在作为接合晶片的第二镜面抛光半导体硅晶片的镜面抛光表面上形成具有高浓度掺杂剂的掺杂层; 使基底晶片和接合晶片在氧化的表面膜和掺杂层处彼此接触; 以及对这样接触的半导体硅晶片进行热处理以使其整体结合到SOI晶片的前体中。通过在基底晶片和接合晶片通过在氧化的表面膜和掺杂层之间接触而接合基底晶片和接合晶片之前，通过抛光接合晶片上的掺杂层的表面来实现本发明的改进，使得可以在层之间的粘结强度。

9. 发明申请

US20060185581A1 Method for producing a semiconductor wafer 审中-公开
标题翻译：半导体晶片的制造方法
公开(公告)号：US20060185581A1
公开(公告)日：2006-08-24
申请号：US11353046
申请日：2006-02-14
申请人： Hiroji Aga , Nobuhiko Noto , Kiyoshi Mitani
发明人： Hiroji Aga , Nobuhiko Noto , Kiyoshi Mitani
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B31/22 , C30B29/06 , C30B29/52
摘要： The present invention provides a method for producing a semiconductor wafer comprising at least steps of, forming a Si1-XGeX layer (0
摘要翻译：本发明提供一种用于制造半导体晶片的方法，该方法至少包括以下步骤：形成具有临界状态的Si 1-X 1 Ge x X 1层（0

10. 发明授权

US06998329B2 SOI wafer producing method, and wafer separating jig 失效
标题翻译： SOI晶片制造方法和晶片分离夹具
公开(公告)号：US06998329B2
公开(公告)日：2006-02-14
申请号：US10483613
申请日：2002-07-24
申请人： Hiroji Aga , Hiroyuki Takahashi , Kiyoshi Mitani
发明人： Hiroji Aga , Hiroyuki Takahashi , Kiyoshi Mitani
IPC分类号： H01L21/30 , B65G49/07
CPC分类号： H01L21/67092 , H01L21/76254 , Y10S414/135
摘要： In the process of fabricating an SOI wafer based on the Smart Cut® Process, a stack 34 of an SOI wafer 39 and a residual wafer 38 are separated into the individual wafers using a wafer separation jig 1 of this invention. The wafer separation jig 1 comprises a supporting plane 1p on which the stack 34 is supported in the thickness-wise direction, and a stepped portion 2 disposed on the supporting plane 1p, and having a height adjusted so as to stop movement-by-sliding of the lower wafer of the stack, but so as to allow movement-by-sliding of the upper wafer relative to the lower wafer. Both wafers are separated from each other by inclining the supporting plane 1p with the stack 34 placed thereon, so as to allow the upper wafer to move by sliding as being driven by its own weight in the in-plane direction relative to the lower wafer. This method is successful in effectively suppressing friction between the wafers, and thus in preventing the wafer surface from being scratched.
摘要翻译：在制造基于智能切割工艺的SOI晶片的过程中，使用本发明的晶片分离夹具1将SOI晶片39的堆叠34和残余晶片38分离成单个晶片。晶片分离夹具1包括在其上沿着厚度方向支撑着堆叠34的支撑平面1p和设置在支撑平面1p上的阶梯部分2，并且具有调节以便停止移动的高度 - 堆叠的下部晶片的滑动，但是允许上部晶片相对于下部晶片的滑动。通过使支撑平面1p与放置在其上的叠层34相互倾斜来将两个晶片彼此分离，以便允许上晶片通过其自重由相对于下晶片的面内方向驱动的滑动而滑动。该方法成功地有效地抑制晶片之间的摩擦，从而防止晶片表面被划伤。

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