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1. 发明申请

US20080076238A1 MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20080076238A1
公开(公告)日：2008-03-27
申请号：US11833619
申请日：2007-08-03
申请人： Isao Miyashita , Yuji Fujii , Hajime Ebara , Katsuo Ishizaka , Norio Hosoya , Hidekazu Okuda
发明人： Isao Miyashita , Yuji Fujii , Hajime Ebara , Katsuo Ishizaka , Norio Hosoya , Hidekazu Okuda
IPC分类号： H01L21/265
CPC分类号： H01L29/66348 , H01L23/49562 , H01L29/41766 , H01L29/42356 , H01L29/7397 , H01L2224/32245 , H01L2224/45144 , H01L2224/48247 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/00
摘要： Provided is a technology of carrying out activation annealing of n type impurity ions implanted for the formation of a field stop layer (n+ type semiconductor region) and activation annealing of p type impurity ions implanted for the formation of a collector region (p+ type semiconductor region) in separate steps to adjust an activation ratio of the n type impurity ions in the field stop layer to 60% or greater and an activation ratio of the p type impurity ions in the collector region to from 1 to 15%. This makes it possible to form an IGBT having a high breakdown voltage and high-speed switching characteristics. Moreover, use of a film stack made of nickel silicide, titanium, nickel and gold films for a collector electrode makes it possible to provide an ohmic contact with the collector region.
摘要翻译：提供了为了形成场阻止层（n + SUP型半导体区域）而注入的n型杂质离子进行活化退火的技术，以及用于形成集电极区域（p + SUP +型半导体区域），以将场致发射层中的n型杂质离子的活化比调节至60％以上，p型杂质的活化率在集电极区域的离子为1〜15％。这使得可以形成具有高击穿电压和高速开关特性的IGBT。此外，使用由硅化镍，钛，镍和金膜构成的用于集电极电极的膜堆叠使得可以与集电极区域提供欧姆接触。

2. 发明授权

US07776660B2 Manufacturing method of a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07776660B2
公开(公告)日：2010-08-17
申请号：US11833619
申请日：2007-08-03
申请人： Isao Miyashita , Yuji Fujii , Hajime Ebara , Katsuo Ishizaka , Norio Hosoya , Hidekazu Okuda
发明人： Isao Miyashita , Yuji Fujii , Hajime Ebara , Katsuo Ishizaka , Norio Hosoya , Hidekazu Okuda
IPC分类号： H01L21/332
CPC分类号： H01L29/66348 , H01L23/49562 , H01L29/41766 , H01L29/42356 , H01L29/7397 , H01L2224/32245 , H01L2224/45144 , H01L2224/48247 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/00
摘要： Provided is a technology of carrying out activation annealing of n type impurity ions implanted for the formation of a field stop layer (n+ type semiconductor region) and activation annealing of p type impurity ions implanted for the formation of a collector region (p+ type semiconductor region) in separate steps to adjust an activation ratio of the n type impurity ions in the field stop layer to 60% or greater and an activation ratio of the p type impurity ions in the collector region to from 1 to 15%. This makes it possible to form an IGBT having a high breakdown voltage and high-speed switching characteristics. Moreover, use of a film stack made of nickel silicide, titanium, nickel and gold films for a collector electrode makes it possible to provide an ohmic contact with the collector region.
摘要翻译：提供了用于形成场致发射层（n +型半导体区域）而注入的n型杂质离子的活化退火和注入用于形成集电极区域（p +型半导体区域）的p型杂质离子的活化退火的技术），将场致发光层中的n型杂质离子的活化比例调整为60％以上，将集电区域的p型杂质离子的活化比例调整为1〜15％。这使得可以形成具有高击穿电压和高速开关特性的IGBT。此外，使用由硅化镍，钛，镍和金膜构成的用于集电极电极的膜堆叠使得可以与集电极区域提供欧姆接触。

3. 发明申请

US20090174061A1 Semiconductor Device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20090174061A1
公开(公告)日：2009-07-09
申请号：US12401491
申请日：2009-03-10
申请人： Yasuhiro NAKA , Tomio Iwasaki , Hidekazu Okuda , Yuji Fujii
发明人： Yasuhiro NAKA , Tomio Iwasaki , Hidekazu Okuda , Yuji Fujii
IPC分类号： H01L23/48 , H01L23/485
CPC分类号： H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/04042 , H01L2224/05001 , H01L2224/0554 , H01L2224/11 , H01L2224/1147 , H01L2224/13 , H01L2224/13099 , H01L2224/16 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/73265 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/1306 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要： To prevent peeling-off of a film in a solder connection pad of a semiconductor device, which peeling-off may occur due to thermal load and so on in the manufacture process, a pad structure is adopted in which a Cr film good in adhesiveness to either of a Ti film or Ti compound film and a Ni film (or a Cu film) is interposed between the Ti film or Ti compound film formed on a silicon or silicon oxide film, and the Ni film (or the Cu film) to be connected to solder. Further, to prevent peeling-off at the interface between the Ti film or Ti compound film and the silicon oxide film, the Cr film is formed in a larger area than the Ti film or Ti compound film.
摘要翻译：为了防止在制造过程中由于热负荷等而在半导体器件的焊料接合焊盘中的膜剥离，由此导致剥离，可以采用衬垫结构，其中Cr膜具有良好的粘合性在形成于硅或氧化硅膜上的Ti膜或Ti化合物膜之间插入Ti膜或Ti化合物膜和Ni膜（或Cu膜），Ni膜（或Cu膜）为连接到焊料。此外，为了防止在Ti膜或Ti化合物膜与氧化硅膜之间的界面处的剥离，Cr膜形成在比Ti膜或Ti化合物膜更大的面积上。

4. 发明申请

US20060043605A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20060043605A1
公开(公告)日：2006-03-02
申请号：US11172207
申请日：2005-06-29
申请人： Yasuhiro Naka , Tomio Iwasaki , Hidekazu Okuda , Yuji Fujii
发明人： Yasuhiro Naka , Tomio Iwasaki , Hidekazu Okuda , Yuji Fujii
IPC分类号： H01L23/48
CPC分类号： H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/04042 , H01L2224/05001 , H01L2224/0554 , H01L2224/11 , H01L2224/1147 , H01L2224/13 , H01L2224/13099 , H01L2224/16 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/73265 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/1306 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要： To prevent peeling-off of a film in a solder connection pad of a semiconductor device, which peeling-off may occur due to thermal load and so on in the manufacture process, a pad structure is adopted in which a Cr film good in adhesiveness to either of a Ti film or Ti compound film and a Ni film (or a Cu film) is interposed between the Ti film or Ti compound film formed on a silicon or silicon oxide film, and the Ni film (or the Cu film) to be connected to solder. Further, to prevent peeling-off at the interface between the Ti film or Ti compound film and the silicon oxide film, the Cr film is formed in a larger area than the Ti film or Ti compound film.
摘要翻译：为了防止在制造过程中由于热负荷等而在半导体器件的焊料接合焊盘中的膜剥离，由此导致剥离，可以采用衬垫结构，其中Cr膜具有良好的粘合性在形成于硅或氧化硅膜上的Ti膜或Ti化合物膜之间插入Ti膜或Ti化合物膜和Ni膜（或Cu膜），Ni膜（或Cu膜）为连接到焊料。此外，为了防止在Ti膜或Ti化合物膜与氧化硅膜之间的界面处的剥离，Cr膜形成在比Ti膜或Ti化合物膜更大的面积上。

5. 发明授权

US08984960B2 Ultrasonic flow rate measurement device having inlet side flow rectification part and outlet side coupling part 有权
标题翻译：超声波流量测量装置具有入口侧流量整流部分和出口侧耦合部分
公开(公告)号：US08984960B2
公开(公告)日：2015-03-24
申请号：US13821915
申请日：2011-11-02
申请人： Yuji Fujii , Yukinori Ozaki , Masato Satou , Hirokazu Gotou
发明人： Yuji Fujii , Yukinori Ozaki , Masato Satou , Hirokazu Gotou
IPC分类号： G01F1/66 , G01F15/18
CPC分类号： G01F1/662 , G01F15/185
摘要： Ultrasonic flow rate measurement device includes measurement flow path in which a fluid to be measured flows, and a pair of ultrasonic vibrators that are disposed in directions such that a propagation path of an ultrasonic wave forms a V-shape relative to measurement flow path. Moreover, the device includes measurement circuit which measures a flow rate of the fluid to be measured by measuring a propagation time of the ultrasonic wave between the pair of ultrasonic vibrators, and inlet-side rectification part which is disposed, in the inlet side of measurement flow path, to stabilize the flow of the fluid to be measured. Furthermore, the device includes outlet-side coupling part which is disposed in the outlet side of measurement flow path, and signal lead-out part which outputs a flow rate value measured with measurement circuit.
摘要翻译：超声波流量测量装置包括要测量的流体流动的测量流动路径，以及一对超声波振动器，其布置在使得超声波的传播路径相对于测量流路形成V形的方向上。此外，该装置包括测量电路，其通过测量在一对超声波振动器之间的超声波的传播时间和设置在测量入口侧的入口侧整流部来测量待测量的流体的流量流动路径，以稳定要测量的流体的流动。此外，该装置包括设置在测量流路的出口侧的出口侧联接部和输出利用测量电路测量的流量值的信号导出部。

6. 发明授权

US08978482B2 Partition plate securement for an ultrasonic flow meter 有权
标题翻译：超声波流量计分隔板固定
公开(公告)号：US08978482B2
公开(公告)日：2015-03-17
申请号：US13883506
申请日：2011-11-07
申请人： Yukinori Ozaki , Yuji Fujii , Masato Satou , Hirokazu Gotou , Aoi Watanabe
发明人： Yukinori Ozaki , Yuji Fujii , Masato Satou , Hirokazu Gotou , Aoi Watanabe
IPC分类号： G01F1/66
CPC分类号： G01F1/662 , G01F1/66 , G01F1/667
摘要： An ultrasonic flow rate measuring device includes a flow path, a partition plate that is inserted from an aperture to partition the flow path into plural sections, an ultrasound transmission body, plural ultrasonic transducers that are provided in positions facing a bottom plate such that an ultrasonic wave transmitted from one of the ultrasonic transducers through the ultrasound transmission body is reflected by the bottom plate and received by the other ultrasonic transducer, a measurement circuit that measures an ultrasonic propagation time between the plurality of the ultrasonic transducers; and a calculation circuit that obtains a flow rate of the target fluid based on a signal from the measurement circuit.
摘要翻译：一种超声波流量测量装置，包括流路，从孔径插入以将流路分隔成多个部分的隔板，超声波传播体，设置在面向底板的位置的超声波换能器，使得超声波通过超声波传播体从超声波换能器中的一个传输的波被该底板反射并被另一个超声波换能器接收，该测量电路测量多个超声波换能器之间的超声波传播时间; 以及基于来自测量电路的信号获得目标流体的流量的计算电路。

7. 发明授权

US08798889B2 Automatic transmission and method of control for rejecting erroneous torque measurements 有权
标题翻译：自动变速器和控制方法用于排除错误的转矩测量
公开(公告)号：US08798889B2
公开(公告)日：2014-08-05
申请号：US12973229
申请日：2010-12-20
申请人： Yuji Fujii , Bradley Dean Riedle , Gregory Michael Pietron , Joseph F. Kucharski , Diana Yanakiev , Richard Reynolds Hathaway
发明人： Yuji Fujii , Bradley Dean Riedle , Gregory Michael Pietron , Joseph F. Kucharski , Diana Yanakiev , Richard Reynolds Hathaway
IPC分类号： B60T7/12
CPC分类号： F16H59/16 , F16H2059/147 , F16H2061/1208 , F16H2061/1284
摘要： A method for an automatic transmission includes measuring torque of a component of the transmission using a torque sensor in communication with the component. The torque of the component is estimated from information other than the measured torque. The measured torque is rejected from being used in a control operation of the transmission if the difference between the measured torque and the estimated torque is greater than a selected threshold.
摘要翻译：一种自动变速器的方法包括：使用与所述部件连通的转矩传感器来测量所述变速器的部件的转矩。根据测得的转矩以外的信息估算该部件的转矩。如果所测量的转矩和估计转矩之差大于所选择的阈值，则测量转矩被拒绝用于变速器的控制操作。

8. 发明授权

US08738254B2 Non-synchronous automatic transmission up-shift control utilzing input torque signal 有权
标题翻译：非同步自动变速器上变频控制采用输入转矩信号
公开(公告)号：US08738254B2
公开(公告)日：2014-05-27
申请号：US12950044
申请日：2010-11-19
申请人： Seung Hoon Lee , Yuji Fujii , Bradley Dean Riedle , Gregory Michael Pietron , Diana Yanakiev , Joseph F. Kucharski , Hongtei Eric Tseng
发明人： Seung Hoon Lee , Yuji Fujii , Bradley Dean Riedle , Gregory Michael Pietron , Diana Yanakiev , Joseph F. Kucharski , Hongtei Eric Tseng
IPC分类号： G06F7/00 , G06F17/00 , G06F19/00
CPC分类号： F16H61/061 , B60W10/06 , B60W10/115 , B60W30/19 , B60W2510/1025 , B60W2710/0666 , B60W2710/1022 , F16H59/16 , F16H61/686 , F16H63/502 , F16H2306/42
摘要： A non-synchronous automatic transmission up-shift control utilizes input torque measurements. The input torque is measured during an up-shift having preparatory, torque, and inertia phases. Target input torque profiles for the torque and inertia phases are determined based on the input torque during the preparatory phase. During the torque phase, an engine torque is controlled to cause the input torque to achieve the target profile for the torque phase. During the inertia phase, the on-coming clutch is controlled to cause the input torque to achieve the target profile for the inertia phase.
摘要翻译：非同步自动变速器升档控制利用输入转矩测量。在具有准备转矩，转矩和惯性阶段的上移期间测量输入转矩。转矩和惯性相位的目标输入转矩曲线是在准备阶段根据输入转矩来确定的。在扭矩阶段期间，控制发动机扭矩以使输入扭矩达到转矩相位的目标轮廓。在惯性阶段期间，控制着来离合器使输入转矩达到惯性阶段的目标轮廓。

9. 发明授权

US08671775B2 Flow rate measuring device 有权
标题翻译：流量测量装置
公开(公告)号：US08671775B2
公开(公告)日：2014-03-18
申请号：US13516588
申请日：2010-12-14
申请人： Hirokazu Gotou , Aoi Watanabe , Yuji Fujii , Kouichi Takemura , Yuji Nakabayashi
发明人： Hirokazu Gotou , Aoi Watanabe , Yuji Fujii , Kouichi Takemura , Yuji Nakabayashi
IPC分类号： G01F1/66
CPC分类号： G01F1/66
摘要： When a flow rate is equal to or more than a reference flow rate, a reference voltage is changed to a level capable of measuring stably to thereby realize the improvement of measurement accuracy at the time of a large amount of flow rate. A flow rate determination means compares a flow rate calculated by a flow rate calculation means with the reference flow rate. When the calculated flow rate is larger than the reference flow rate, the reference voltage set by a reference voltage setting means is changed, whereby the zero cross point can be detected stably at the portion where the degree of the influence of the change in the amplitude of the received signal is small. Thus, it is possible to provide a flow rate measuring device capable of measuring a flow rate stably with high accuracy even when a fluid flow is disturbed due to a large amount of flow rate.
摘要翻译：当流量等于或大于参考流量时，将参考电压变为能够稳定测量的水平，从而在大量流量时实现提高测量精度。流量确定装置将由流量计算装置计算的流量与参考流量进行比较。当计算出的流量大于参考流量时，由参考电压设定装置设定的参考电压发生变化，从而能够在振幅变化的影响程度的部分稳定地检测零交叉点的接收信号很小。因此，可以提供一种流量测量装置，即使由于流量大而扰动流体流动，也能够以高精度稳定地测量流量。

10. 发明申请

US20140069759A1 Transmission and Method of Controlling Clutch During Ratio Change 有权
公开(公告)号：US20140069759A1
公开(公告)日：2014-03-13
申请号：US13613726
申请日：2012-09-13
申请人： Gregory Michael Pietron , Yuji Fujii , Joseph F. Kucharski , Nicholas Joseph Witte , Stephen Michael Cicala , Bradley Dean Riedle , Diana Yanakiev , Nimrod Kapas , Davorin David Hrovat
发明人： Gregory Michael Pietron , Yuji Fujii , Joseph F. Kucharski , Nicholas Joseph Witte , Stephen Michael Cicala , Bradley Dean Riedle , Diana Yanakiev , Nimrod Kapas , Davorin David Hrovat
IPC分类号： B60W10/02
CPC分类号： F16H61/061 , F16H3/006 , F16H3/66 , F16H59/16 , F16H2003/007 , F16H2059/148 , F16H2061/0087 , F16H2200/0052 , F16H2200/201 , F16H2200/2043 , F16H2306/40 , F16H2342/044
摘要： A transmission and control method are disclosed which ensure proper stroke pressure and minimize torque transients during a shift event. The transmission includes a clutch having a torque capacity based on a fluid pressure, a torque sensor adapted to measure a torque value that varies in relationship to the torque capacity, and a controller. The method includes varying the fluid pressure around a predetermined value, measuring a resulting torque difference with the torque sensor, and adjusting a clutch control parameter if the resulting torque difference is less than a threshold value.

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