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1. 发明专利

JP2008124453A Hetero-junction bipolar transistor equipped with single crystal external base and emitter, and method related thereto 有权
标题翻译：具有单晶外部基座和发射器的异质结双极晶体管及其相关方法
公开(公告)号：JP2008124453A
公开(公告)日：2008-05-29
申请号：JP2007274902
申请日：2007-10-23
申请人： Internatl Business Mach Corp , インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation
发明人： THOMAS N ADAM , WALLNER THOMAS A
IPC分类号： H01L21/331 , H01L29/737
CPC分类号： H01L29/7378 , H01L29/0821 , H01L29/66242
摘要： PROBLEM TO BE SOLVED: To provide a self aligning type integrated scheme for enabling scaling of a future HBT to solve the problems in which a known method causes the problems such as unmatching between an emitter and a base, non-planarity and a discontinuous single crystal intrinsic base as a single crystal external base, resulting difficulty in manufacture of a high-performance SiGe HBT due to problems related to high-dimension scaling.
SOLUTION: According to one HBT embodiment, a hetero-structure bipolar transistor (HBT) includes a substrate, a single crystal emitter on the substrate, a collector in the substrate, at least an isolation region adjacent to the collector, a single crystal silicon germanium (SiGe) intrinsic base extending to each isolation region, and a single crystal silicon external base. The method may includes a step of forming an intrinsic base, an external base and an emitter as a single crystal, and forms the external base (and emitter) by a self-aligned method using a selective epitaxial growth on a porous silicon. As a result, some mask levels can be omitted and this method may be an inexpensive alternative for usual processing.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种自对准型集成方案，用于实现未来HBT的缩放以解决已知方法引起诸如发射器和基座之间的不匹配等问题的非平面性和不连续的单晶内在基极作为单晶外部基极，由于与高尺寸结垢相关的问题，导致难以制造高性能SiGe HBT。解决方案：根据一个HBT实施例，异质结双极晶体管（HBT）包括衬底，衬底上的单晶发射极，衬底中的集电极，至少与集电极相邻的隔离区，单个晶体硅锗（SiGe）本征基极延伸到每个隔离区域，以及单晶硅外部基极。该方法可以包括形成本征基极，外部基极和发射极作为单晶的步骤，并且通过使用多孔硅上的选择性外延生长的自对准方法形成外部基极（和发射极）。结果，可以省略一些掩模级别，并且该方法可能是用于通常处理的便宜的替代方案。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2008124451A Hetero-junction bipolar transistor having single crystal base and method related thereto 审中-公开
标题翻译：具有单晶相的异质结双极晶体管及其相关方法
公开(公告)号：JP2008124451A
公开(公告)日：2008-05-29
申请号：JP2007274814
申请日：2007-10-23
申请人： Internatl Business Mach Corp , インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation
发明人： THOMAS N ADAM , WALLNER THOMAS A
IPC分类号： H01L21/331 , H01L21/76 , H01L29/417 , H01L29/737
CPC分类号： H01L29/66242 , H01L29/7378
摘要： PROBLEM TO BE SOLVED: To solve the problems in which proper formation of an external base 16 on an HBT is prevented because a polycrystalline intrinsic base 14 becomes thinner (about only 20-30%), and more importantly, dopant-containing silicon germanium (SiGe) on a deep trench isolation region 24 and/or a shallow trench isolation region 26 becomes discontinuous.
SOLUTION: The HBT includes a substrate, a polysilicon emitter on the substrate, a collector in the substrate, at least an isolation region adjacent to the collector, an intrinsic base extending to each isolation region and containing monosilicon germanium, and a monosilicon external base. One method includes a step of replacing the formation of the isolation region by the formation of injected porous silicon to be later converted to a dielectric. As a result, a single crystal silicon germanium base profile layer having expanded dimension of a lateral direction can be formed on the isolation region.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：为了解决由于多晶本征基极14变薄（约20-30％）而防止HBT上的外部基底16的适当形成的问题，更重要的是，含掺杂剂深沟槽隔离区域24和/或浅沟槽隔离区域26上的硅锗（SiGe）变得不连续。解决方案：HBT包括衬底，衬底上的多晶硅发射极，衬底中的集电极，至少与集电极相邻的隔离区，延伸到每个隔离区并含有单硅锗的本征碱，以及含有单硅锗外部基地一种方法包括通过形成注入的多孔硅来替代隔离区的形成以便转换成电介质的步骤。结果，可以在隔离区域上形成具有横向扩展尺寸的单晶硅锗基体轮廓层。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2007158333A Bipolar junction transistor, and method of forming same 有权
标题翻译：双极接头晶体管及其形成方法
公开(公告)号：JP2007158333A
公开(公告)日：2007-06-21
申请号：JP2006322586
申请日：2006-11-29
申请人： Internatl Business Mach Corp , インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation
发明人： WALLNER THOMAS A , BEDELL STEPHEN W , THOMAS N ADAM , DE SOUZA JOEL P
IPC分类号： H01L21/331 , H01L21/76 , H01L21/8222 , H01L27/082 , H01L29/737
CPC分类号： H01L29/732 , H01L29/0649 , H01L29/0657 , H01L29/1004 , H01L29/66242 , H01L29/66272 , H01L29/7378
摘要： PROBLEM TO BE SOLVED: To provide an improved bipolar junction transistor (BJT) characterized in that the parasitic capacitance has been reduced without reduction in base resistance accompanying the reduction in the parasitic capacitance, and to provide a method of forming the same.
SOLUTION: The collector region of each BJT is arranged in the surface of a semiconductor substrate and adjacent to a first shallow trench isolation (STI) region. A second STI region is formed while the second STI region extends between the first STI region and the collector region, and undercuts a part of an active base region with an undercut angle of about 90° or less. For example, the second STI region may have a section with a substantially triangular shape with an undercut angle of less than about 90° or a section with a substantially rectangular shape with an undercut angle of about 90°. Such a second STI region can be manufactured using a porous surface part formed in the upper side surface of the collector region.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种改进的双极结型晶体管（BJT），其特征在于，随着寄生电容的减小，寄生电容已经降低而基极电阻没有降低，并且提供了其形成方法。解决方案：每个BJT的集电极区域布置在半导体衬底的表面中并与第一浅沟槽隔离（STI）区域相邻。形成第二STI区域，同时第二STI区域在第一STI区域和收集区域之间延伸，并且底切角为约90°或更小的一部分有源基区域。例如，第二STI区域可以具有具有小于约90°的底切角的基本三角形形状的截面或具有约90°的底切角的基本矩形形状的截面。可以使用形成在集电区域的上侧表面中的多孔表面部分来制造这样的第二STI区域。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2013141007A Improvement of mobility in silicon germanium heterojunction bipolar transistor 有权
标题翻译：硅锗绝缘双极晶体管中移动性的改进
公开(公告)号：JP2013141007A
公开(公告)日：2013-07-18
申请号：JP2013044045
申请日：2013-03-06
申请人： Internatl Business Mach Corp , インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation
发明人： DURESETI CHIDAMBARRAO , THOMAS N ADAM
IPC分类号： H01L21/331 , H01L29/737
CPC分类号： H01L29/7378 , H01L29/161 , H01L29/165
摘要： PROBLEM TO BE SOLVED: To increase a biaxial distortion in a base region of an HBT device, thereby increasing a carrier mobility in the base region.SOLUTION: The heterojunction bipolar transistor (HBT) offers high performance, and comprises a base region having a SiGe-containing layer therein. The SiGe-containing layer has a thickness of no more than 100 nm approximately, and has a predetermined critical germanium content. Further, the SiGe-containing layer has an average germanium content of no less than about 80% of the predetermined critical germanium content. The method for increasing the mobility of carriers in the HBT with a SiGe-containing base layer having a thickness of no more than 100 nm comprises the step of uniformly increasing the content of germanium in the base layer so that the inside average germanium content is no less than 80% of a critical germanium content calculated on the basis of the thickness of the base layer.
摘要翻译：要解决的问题：增加HBT器件的基极区域中的双轴失真，从而增加基极区域中的载流子迁移率。解决方案：异质结双极晶体管（HBT）提供高性能，并且包括具有SiGe的基极区域其中。含SiGe的层的厚度近似不超过100nm，并具有预定的临界锗含量。此外，含SiGe的层的平均锗含量不低于预定临界锗含量的约80％。用具有不超过100nm的厚度的含SiGe的基底层增加HBT中的载流子迁移率的方法包括均匀地增加基底层中的锗含量以使内部平均锗含量不为基于基底层的厚度计算出小于80％的关键锗含量。

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