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1. 发明公开

EP0450302A1 Method of reactive ion etching trenches 失效
标题翻译：维拉法恩·葛培根。
公开(公告)号：EP0450302A1
公开(公告)日：1991-10-09
申请号：EP91102671.4
申请日：1991-02-23
申请人： International Business Machines Corporation
发明人： Harmon, David L. , Kerbaugh, Michael L. , Pascoe, Nancy T. , Rembetski, John F.
IPC分类号： H01L21/308 , H01L21/306
CPC分类号： H01L21/3065 , H01L21/3085
摘要： An improved mask and method of forming a deep and uniform width trench in a substrate and the resulting structure is disclosed. A substrate material (10) such as silicon has deposited thereon a first layer of sacrificial material (16) as a first component of an etch mask, the sacrificial material being a material such as polysilicon that is either etched by or absorbs the same ions which reactively ion etch the substrate (10). A second layer of material (18), which resists reactive ion etching, such as silicon dioxide, is deposited over the first layer of material (16) as a second component of the etch mask. The silicon dioxide is patterned in the form of the trench to be formed in the substrate. The layer of polysilicon material is then reactive ion etched and the reactive ion etching continued to form a trench in the silicon substrate (10). The polysilicon acts as a sacrificial material being etched by any ions that are reflected from the silicon dioxide or are directed at an angle such that they strike the layer of polysilicon material. Thus, only those ions which are directed essentially normal to the underlying substrate perform the trench etching. This allows the trench to have essentially straight side walls and to be of essentially uniform width.
摘要翻译：公开了一种在衬底中形成深而均匀的宽度沟槽的改进的掩模和方法。诸如硅的衬底材料（10）在其上沉积有作为蚀刻掩模的第一组分的第一牺牲材料层（16），牺牲材料是诸如多晶硅的材料，其被蚀刻或吸收相同的离子，反应离子蚀刻衬底（10）。第二层材料（18），其抵抗反应离子蚀刻，例如二氧化硅，沉积在作为蚀刻掩模的第二组分的第一材料层（16）上。二氧化硅以形成在衬底中的沟槽的形式构图。然后多晶硅材料层被反应离子蚀刻，并且反应离子蚀刻继续在硅衬底（10）中形成沟槽。多晶硅充当被二氧化硅反射的任何离子蚀刻的牺牲材料，或以一定角度被引导使得它们撞击多晶硅材料层。因此，仅基本上垂直于下面的衬底的那些离子执行沟槽蚀刻。这允许沟槽具有基本上直的侧壁并且具有基本均匀的宽度。

2. 发明公开

EP0507183A2 Process for selective deposition of a polymer coating 失效
标题翻译：阿尔加伦·埃纳特·舒特施希特
公开(公告)号：EP0507183A2
公开(公告)日：1992-10-07
申请号：EP92105018.3
申请日：1992-03-24
申请人： International Business Machines Corporation
发明人： Armacost, Michael D. , Grundon, Steven A. , Harmon, David L. , Nguyen, Son V. , Rembetski, John F.
IPC分类号： H01L21/312 , H01L21/76
CPC分类号： H01L21/02118 , B05D1/60 , H01L21/02337 , H01L21/0234 , H01L21/30655 , H01L21/312 , H01L21/76232
摘要： Disclosed is a process for depositing a conformal polymer coating on selected areas of a silicon substrate. The substrate (1) is first exposed through a mask to a gaseous plasma so as to form a film (2) of desired pattern, the plasma comprising a compound having strong electron donating characteristics. Then, the patterned film and the remaining substrate not covered by the film are exposed to the vapor of a monomer, which condenses and polymerizes on the exposed substrate surfaces, but not on the film. The film serves to inhibit substantial deposition of the coating (3), so as to provide a selective deposition, where the coating (3) is formed only on those areas of the substrate where desired.
摘要翻译：公开了一种在硅衬底的选定区域上沉积共形聚合物涂层的方法。首先通过掩模将基板（1）暴露于气态等离子体以形成所需图案的膜（2），该等离子体包含具有强电子给予特性的化合物。然后，图案化膜和未被膜覆盖的剩余基底暴露于单体的蒸汽，该单体在暴露的基板表面而不是在膜上冷凝和聚合。该膜用于抑制涂层（3）的显着沉积，从而提供选择性沉积，其中仅在需要的基底的那些区域上形成涂层（3）。

3. 发明公开

EP0507183A3 Process for selective deposition of a polymer coating 失效
标题翻译：选择性沉积聚合物涂料的方法
公开(公告)号：EP0507183A3
公开(公告)日：1993-10-20
申请号：EP92105018.3
申请日：1992-03-24
申请人： International Business Machines Corporation
发明人： Armacost, Michael D. , Grundon, Steven A. , Harmon, David L. , Nguyen, Son V. , Rembetski, John F.
IPC分类号： H01L21/312 , H01L21/76
CPC分类号： H01L21/02118 , B05D1/60 , H01L21/02337 , H01L21/0234 , H01L21/30655 , H01L21/312 , H01L21/76232
摘要： Disclosed is a process for depositing a conformal polymer coating on selected areas of a silicon substrate. The substrate (1) is first exposed through a mask to a gaseous plasma so as to form a film (2) of desired pattern, the plasma comprising a compound having strong electron donating characteristics. Then, the patterned film and the remaining substrate not covered by the film are exposed to the vapor of a monomer, which condenses and polymerizes on the exposed substrate surfaces, but not on the film. The film serves to inhibit substantial deposition of the coating (3), so as to provide a selective deposition, where the coating (3) is formed only on those areas of the substrate where desired.
摘要翻译：公开了一种在硅衬底的选定区域上沉积共形聚合物涂层的方法。首先通过掩模将基板（1）暴露于气态等离子体以形成所需图案的膜（2），该等离子体包含具有强电子给予特性的化合物。然后，图案化膜和未被膜覆盖的剩余基底暴露于单体的蒸汽，该单体在暴露的基板表面而不是在膜上冷凝和聚合。该膜用于抑制涂层（3）的显着沉积，从而提供选择性沉积，其中仅在需要的基底的那些区域上形成涂层（3）。

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