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    • 2. 发明公开
    • Method and apparatus for radiation induced dry chemical etching
    • Verfahren und Vorrichtungfürdurch Bestrahlung induziertes chemischesTrockenätzen。
    • EP0265764A1
    • 1988-05-04
    • EP87114911.8
    • 1987-10-13
    • International Business Machines Corporation
    • Burns, Francis CharlesDreyfus, Russel WarrenSusko, John Richard
    • C23F1/02C23F1/08C23F4/00
    • C23F4/02
    • The method is used for etching a layer of a first material superposed on a second material, which comprises:

      (a) mounting the sample in a reaction chamber containing a gas reacting with said first material forming a first solid reaction product;
      (b) applying a beam of laser radiation to a region of the first material to vaporize said product there with the first material being exposed which again forms said product in said region;
      (c) performing step (b) repeatedly until the first material in said region has been removed and a second solid reaction product is formed from the second material and the gas;
      (d) directing a beam of narrow band light into the vaporized reaction products with said light inducing said vaporized second reaction product to fluoresce light. The application of the pulsed laser can be terminated in response to the detection of the fluorescence.

      The apparatus used for the etching a layer of a first material superposed on a second material, comprises:

      (a) a reaction chamber within which the said sample substrate is mounted, and which is equiped with means to introduce a reactive gas;
      (b) etching laser means for patternwise vaporizing the reaction product of the first material and the gas;
      (c) probe beam means for directing a beam of narrow band light into the vaporized reaction products;
      (d) detecting means for detecting fluorescence;
      (e) means to terminate said pulsing of said etching laser in response to detection of said fluorescence.
    • 该方法用于蚀刻叠加在第二材料上的第一材料的层,其包括:(a)将样品安装在包含与形成第一固体反应产物的所述第一材料反应的气体的反应室中; (b)将一束激光辐射施加到所述第一材料的区域以使所述产品蒸发,其中所述第一材料被暴露,所述第一材料在所述区域中再次形成所述产品; (c)反复进行步骤(b),直到所述区域中的第一材料被去除并且由第二材料和气体形成第二固体反应产物; (d)将所述窄带光束引导到蒸发的反应产物中,所述光诱导所述蒸发的第二反应产物以发出荧光。 脉冲激光的应用可以响应于荧光的检测来终止。 用于蚀刻叠置在第二材料上的第一材料的层的装置包括:(a)反应室,所述样品基板安装在该反应室内,并且装有引入反应气体的装置; (b)蚀刻用于使第一材料和气体的反应产物图案化蒸发的激光装置; (c)用于将窄带光束引导到蒸发的反应产物中的探测光束装置; (d)检测荧光的检测装置; (e)响应于所述荧光的检测而终止所述蚀刻激光器的所述脉冲的装置。 Ë