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1. 发明授权

EP0081626B1 Dual electron injector structure and semiconductor memory device including a dual electron injector structure 失效
标题翻译：双电子注射器结构和半导体存储器件，包括双电子注入器结构
公开(公告)号：EP0081626B1
公开(公告)日：1988-10-19
申请号：EP82105481.4
申请日：1982-06-23
申请人： International Business Machines Corporation
发明人： Dimaria, Donelli Joseph , Dong, David Wah
IPC分类号： G11C11/34 , G11C17/00 , H01L29/60
CPC分类号： H01L29/7882

2. 发明公开

EP0081626A3 Dual electron injector structure and semiconductor memory device including a dual electron injector structure 失效
标题翻译：双电子注射器结构和半导体存储器件，包括双电子注入器结构
公开(公告)号：EP0081626A3
公开(公告)日：1985-11-06
申请号：EP82105481
申请日：1982-06-23
申请人： International Business Machines Corporation
发明人： Dimaria, Donelli Joseph , Dong, David Wah
IPC分类号： G11C11/34 , G11C17/00 , H01L29/60
CPC分类号： H01L29/7882
摘要： A DEIS (Dual Electron Injector Structure) EAROM (Electrically Alterable Read Only Memory) device has a silicon-rich, silicon dioxide region 5 between the dual injector regions (1, 3). The region (5) has an excess of silicon therein which is less than the excess of silicon in the injector regions (1, 3). The device differs from known DEIS EAROM devices in that the insulator layer between the injectors is rendered conductive to a desired degree by causing a compound insulator like SiO 2 to be off-stoichiometry during deposition so that the resulting insulator becomes silicon rich. Alternatively, the insulator may be deposited together with material which renders the insulator conductive or a metallic specie may be added to the insulator by diffusion or ion Implantation after the insulator is formed. The resulting slightly conductive insulator provides a means for draining off trapped charge in the insulator resulting in a device of such improved cyclibility that the DEIS EAROM can be used as a Non-Volatile Random Access Memory (NVRAM) capable of from 10 8 to greater than 10 10 cycles before threshold collapse occurs. The conductive insulator is designed so that it is conductive only at high electric fields encountered during writing and erasing and highly blocking at low fields encountered during reading or storage operations.

3. 发明公开

EP0081626A2 Dual electron injector structure and semiconductor memory device including a dual electron injector structure 失效
标题翻译： Doppel-Elektroneninjektionsstruktur und Halbleiterspeicheranordnung mit Doppel-Elektroneninjektionsstruktur。
公开(公告)号：EP0081626A2
公开(公告)日：1983-06-22
申请号：EP82105481.4
申请日：1982-06-23
申请人： International Business Machines Corporation
发明人： Dimaria, Donelli Joseph , Dong, David Wah
IPC分类号： G11C11/34 , G11C17/00 , H01L29/60
CPC分类号： H01L29/7882
摘要： A DEIS (Dual Electron Injector Structure) EAROM (Electrically Alterable Read Only Memory) device has a silicon-rich, silicon dioxide region 5 between the dual injector regions (1, 3). The region (5) has an excess of silicon therein which is less than the excess of silicon in the injector regions (1, 3). The device differs from known DEIS EAROM devices in that the insulator layer between the injectors is rendered conductive to a desired degree by causing a compound insulator like SiO 2 to be off-stoichiometry during deposition so that the resulting insulator becomes silicon rich. Alternatively, the insulator may be deposited together with material which renders the insulator conductive or a metallic specie may be added to the insulator by diffusion or ion Implantation after the insulator is formed. The resulting slightly conductive insulator provides a means for draining off trapped charge in the insulator resulting in a device of such improved cyclibility that the DEIS EAROM can be used as a Non-Volatile Random Access Memory (NVRAM) capable of from 10 8 to greater than 10 10 cycles before threshold collapse occurs.
The conductive insulator is designed so that it is conductive only at high electric fields encountered during writing and erasing and highly blocking at low fields encountered during reading or storage operations.
摘要翻译： DEIS（双电子注入器结构）EAROM（电可更改只读存储器）器件在双注入器区域（1,3）之间具有富含硅的二氧化硅区域5。区域（5）中的硅含量过多，其小于喷射器区域（1,3）中硅的过量。该装置与已知的DEIS EAROM装置的不同之处在于，通过在沉积期间使诸如SiO 2的复合绝缘体离开化学计量，使得所得绝缘体变成富硅，使注入器之间的绝缘体层达到所需的程度。或者，绝缘体可以与形成绝缘体的材料一起沉积在导体上，或者在形成绝缘体之后通过扩散或离子注入将金属物质加入到绝缘体中。所得到的稍微导电的绝缘体提供了用于排出绝缘体中的俘获电荷的装置，导致具有这种改进的可循环性的装置，使得DEIS EAROM可以用作能够从10 8到...的非易失性随机存取存储器（NVRAM）阈值崩溃之前大于10 <1> 0个周期。导电绝缘体被设计成仅在写入和擦除期间遇到的高电场和在读取或存储操作期间遇到的低场强度高度阻塞时才导电。

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