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1. 发明公开

EP0392954A2 A Lateral transistor and method of making same 失效
标题翻译： Laltaltransistor和Verfahren zum Herstellen desselben。
公开(公告)号：EP0392954A2
公开(公告)日：1990-10-17
申请号：EP90480025.7
申请日：1990-02-20
申请人： International Business Machines Corporation
发明人： Desilets, Brian Henry , Hsieh, Chang-Ming , Hsu, Louis Lu-Chen
IPC分类号： H01L21/285 , H01L21/331 , H01L29/73
CPC分类号： H01L29/6625 , H01L21/763 , H01L29/41708 , H01L29/735 , Y10S148/05
摘要： A method of fabricating a lateral transistor (110) is provided, including the steps of: providing a body of semiconductor material including a device region (30) of a first conductivity type (N⁺); patterning the surface of the device region to define a first transistor region (44); filling the patterned portion of the device region surrounding the first transistor region with an insulating material to a height generally equal to the surface of said first transistor region; removing portions of the insulating material so as to define a pair of trenches (22) generally bounding opposite sides of the first transistor region; filling the pair of trenches with doped conductive material (26) of opposite conductivity type to the first transistor region; and annealing the semiconductor body whereby to form second and third transistor regions (96,98) of opposite conductivity type to the first transistor region (44) in the opposing sides of the first transistor region completing the process to provide contact electrodes (102, 104, 106).
摘要翻译：提供一种制造横向晶体管（110）的方法，包括以下步骤：提供包括第一导电类型（N +）的器件区域（30）的半导体材料体; 图案化器件区域的表面以限定第一晶体管区域（44）; 用绝缘材料将围绕第一晶体管区域的器件区域的图案化部分填充到大体上等于所述第一晶体管区域的表面的高度; 去除所述绝缘材料的部分以便限定通常围绕所述第一晶体管区域的相对侧的一对沟槽（22）; 用与所述第一晶体管区相反的导电类型的掺杂导电材料（26）填充所述一对沟槽; 和退火所述半导体体，从而形成与所述第一晶体管区域的相对侧中的所述第一晶体管区域（44）相反导电类型的第二和第三晶体管区域（96,98），从而完成所述工艺以提供接触电极（102,104 ，106）。

2. 发明公开

EP0392954A3 A Lateral transistor and method of making same 失效
标题翻译：一种横向晶体管及其制造方法
公开(公告)号：EP0392954A3
公开(公告)日：1992-08-12
申请号：EP90480025.7
申请日：1990-02-20
申请人： International Business Machines Corporation
发明人： Desilets, Brian Henry , Hsieh, Chang-Ming , Hsu, Louis Lu-Chen
IPC分类号： H01L21/285 , H01L21/331 , H01L29/73
CPC分类号： H01L29/6625 , H01L21/763 , H01L29/41708 , H01L29/735 , Y10S148/05
摘要： A method of fabricating a lateral transistor (110) is provided, including the steps of: providing a body of semiconductor material including a device region (30) of a first conductivity type (N⁺); patterning the surface of the device region to define a first transistor region (44); filling the patterned portion of the device region surrounding the first transistor region with an insulating material to a height generally equal to the surface of said first transistor region; removing portions of the insulating material so as to define a pair of trenches (22) generally bounding opposite sides of the first transistor region; filling the pair of trenches with doped conductive material (26) of opposite conductivity type to the first transistor region; and annealing the semiconductor body whereby to form second and third transistor regions (96,98) of opposite conductivity type to the first transistor region (44) in the opposing sides of the first transistor region completing the process to provide contact electrodes (102, 104, 106).

3. 发明公开

EP0068155A3 Etch and point detector in reactive ion etching systems 失效
标题翻译：反应离子蚀刻系统中的ETCH和点检测器
公开(公告)号：EP0068155A3
公开(公告)日：1983-03-30
申请号：EP82104712
申请日：1982-05-28
申请人： International Business Machines Corporation
发明人： Desilets, Brian Henry , Gunther, Thomas Anthony
IPC分类号： H01L21/302 , C23F01/00 , G01N11/02
CPC分类号： H01J37/32935 , B81C1/00587 , B81C99/0065 , B81C2201/0138
摘要： As etching progresses from one layer of material to another in reactive ion etching systems, the partial pressures of the reaction chamber gas components change. In constant pressure reactive ion etching systems, changes in chamber pressure are corrected by changes in the etchant species flow rate into the reaction chamber. By monitoring flow rate, information is obtained which may be used to identify points where partial pressures change, and latter may, in turn, be used to derive etching points in the material being etched.

4. 发明授权

EP0314599B1 Method of selective reactive ion etching of substrates 失效
标题翻译：一种用于衬底的选择性反应性离子蚀刻法。
公开(公告)号：EP0314599B1
公开(公告)日：1995-07-05
申请号：EP88480049.1
申请日：1988-09-27
申请人： International Business Machines Corporation
发明人： Desilets, Brian Henry , Kaplan, Richard Dean , Sachdev, Harbans Singh , Sachdev, Krishna Gandhi , Sanchez, Suzan Ann
IPC分类号： G03F7/09
CPC分类号： G03F7/094 , Y10S438/95

5. 发明授权

EP0200133B1 Plasma etching reactor 失效
标题翻译：等离子体蚀刻反应器
公开(公告)号：EP0200133B1
公开(公告)日：1991-06-19
申请号：EP86105478.1
申请日：1986-04-21
申请人： International Business Machines Corporation
发明人： Desilets, Brian Henry , Gunther, Thomas Anthony , Hendricks, Charles Joseph , Keller, John Howard
IPC分类号： H01J37/32 , C23F4/00
CPC分类号： H01J37/32623 , H01J37/32633

6. 发明公开

EP0314599A3 Method of selective reactive ion etching of substrates 失效
标题翻译：选择性反应离子蚀刻基板的方法
公开(公告)号：EP0314599A3
公开(公告)日：1991-03-06
申请号：EP88480049.1
申请日：1988-09-27
申请人： International Business Machines Corporation
发明人： Desilets, Brian Henry , Kaplan, Richard Dean , Sachdev, Harbans Singh , Sachdev, Krishna Gandhi , Sanchez, Suzan Ann
IPC分类号： G03F7/09
CPC分类号： G03F7/094 , Y10S438/95
摘要： A method of image transfer into a substrate by reactive ion etch technique is provided. A mask layer on said substrate is formed by a spin-on film which film is comprised of a mixed organo-functional zircoaluminate or zircotitanate material. The film is dried and cured, and thereafter coated with a radiation sensitive resist. The resist is image wise exposed and developed, which developing preferably also removes the pattern in the mask exposing the substrate. The substrate is then reactive ion etched, the remaining film acting as a barrier material to the etching.

7. 发明公开

EP0068155A2 Etch end point detector in reactive ion etching systems 失效
标题翻译：检测等离子体蚀刻该蚀刻终点。
公开(公告)号：EP0068155A2
公开(公告)日：1983-01-05
申请号：EP82104712.3
申请日：1982-05-28
申请人： International Business Machines Corporation
发明人： Desilets, Brian Henry , Gunther, Thomas Anthony
IPC分类号： H01L21/302 , C23F1/00 , G01N11/02
CPC分类号： H01J37/32935 , B81C1/00587 , B81C99/0065 , B81C2201/0138
摘要： As etching progresses from one layer of material to another in reactive ion etching systems, the partial pressures of the reaction chamber gas components change. In constant pressure reactive ion etching systems, changes in chamber pressure are corrected by changes in the etchant species flow rate into the reaction chamber. By monitoring flow rate, information is obtained which may be used to identify points where partial pressures change, and latter may, in turn, be used to derive etching points in the material being etched.

8. 发明公开

EP0314599A2 Method of selective reactive ion etching of substrates 失效
标题翻译：维吾尔语zur selektiven reaktivenIonenätzungvon Substraten。
公开(公告)号：EP0314599A2
公开(公告)日：1989-05-03
申请号：EP88480049.1
申请日：1988-09-27
申请人： International Business Machines Corporation
发明人： Desilets, Brian Henry , Kaplan, Richard Dean , Sachdev, Harbans Singh , Sachdev, Krishna Gandhi , Sanchez, Suzan Ann
IPC分类号： G03F7/09
CPC分类号： G03F7/094 , Y10S438/95
摘要： A method of image transfer into a substrate by reactive ion etch technique is provided. A mask layer on said substrate is formed by a spin-on film which film is comprised of a mixed organo-functional zircoaluminate or zircotitanate material. The film is dried and cured, and thereafter coated with a radiation sensitive resist. The resist is image wise exposed and developed, which developing preferably also removes the pattern in the mask exposing the substrate. The substrate is then reactive ion etched, the remaining film acting as a barrier material to the etching.
摘要翻译：提供了通过反应离子蚀刻技术将图像转印到基底中的方法。所述基板上的掩模层由旋涂膜形成，该膜由混合的有机官能锆酸铝或锆钛酸盐材料组成。将膜干燥并固化，然后用辐射敏感抗蚀剂涂覆。抗蚀剂被图像曝光和显影，其显影优选也去除了暴露基底的掩模中的图案。然后对衬底进行反应离子蚀刻，剩余的膜用作蚀刻的阻挡材料。

9. 发明公开

EP0200133A3 Plasma etching reactor 失效
标题翻译：等离子体蚀刻反应器
公开(公告)号：EP0200133A3
公开(公告)日：1987-12-16
申请号：EP86105478
申请日：1986-04-21
申请人： International Business Machines Corporation
发明人： Desilets, Brian Henry , Gunther, Thomas Anthony , Hendricks, Charles Joseph , Keller, John Howard
IPC分类号： H01J37/32 , C23F04/00
CPC分类号： H01J37/32623 , H01J37/32633
摘要： A plasma reactor for uniformly etching a large number of semiconductor wafers (32) at a reduced plasma potential includes, in one embodiment, one or several grounded plates (42) spaced apart from each other and mounted intermediate the cathode (20) and the top plate (40) of a reactor chamber (36), the top plate and the chamber walls forming the reactor anode. The topmost grounded plate (42) is spaced apart from the chamber top plate a distance sufficient to allow a plasma to be established between the grounded plate (42) and the top plate, and the distance between the lowest grounded plate (5) and the cathode is large enough not to disturb the field in the proximity of the wafers (32) being etched. At least one plate can be apertured to facilitate etchant gas flow.

10. 发明公开

EP0200133A2 Plasma etching reactor 失效
标题翻译： Plasmaätzreaktor。
公开(公告)号：EP0200133A2
公开(公告)日：1986-11-05
申请号：EP86105478.1
申请日：1986-04-21
申请人： International Business Machines Corporation
发明人： Desilets, Brian Henry , Gunther, Thomas Anthony , Hendricks, Charles Joseph , Keller, John Howard
IPC分类号： H01J37/32 , C23F4/00
CPC分类号： H01J37/32623 , H01J37/32633
摘要： A plasma reactor for uniformly etching a large number of semiconductor wafers (32) at a reduced plasma potential includes, in one embodiment, one or several grounded plates (42) spaced apart from each other and mounted intermediate the cathode (20) and the top plate (40) of a reactor chamber (36), the top plate and the chamber walls forming the reactor anode. The topmost grounded plate (42) is spaced apart from the chamber top plate a distance sufficient to allow a plasma to be established between the grounded plate (42) and the top plate, and the distance between the lowest grounded plate (5) and the cathode is large enough not to disturb the field in the proximity of the wafers (32) being etched. At least one plate can be apertured to facilitate etchant gas flow.
摘要翻译：在一个实施例中，用于均匀蚀刻大量半导体晶片（32）的等离子体反应器在一个实施例中包括彼此间隔开并安装在阴极（20）和顶部之间的一个或多个接地板（42）反应器室（36）的板（40），顶板和室壁形成反应器阳极。最上面的接地板（42）与腔室顶板隔开足以允许在接地板（42）和顶板之间建立等离子体的距离，以及最低接地板（5）和阴极足够大，不会干扰蚀刻晶片（32）附近的场。至少一个板可以开孔以便于蚀刻剂气体流动。

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