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1. 发明专利

JP2012182463A Semiconductor device having drift region and drift control region 有权
标题翻译：具有DRIFT区域和DRIFT控制区域的半导体器件
公开(公告)号：JP2012182463A
公开(公告)日：2012-09-20
申请号：JP2012085846
申请日：2012-04-04
申请人： Infineon Technologies Austria Ag , インフィネオンテクノロジーズオーストリアアクチエンゲゼルシャフト
发明人： FRANK FIRSCH , ANTON MAUDER , HANS-JOACHIM SCHULZE , STEFAN SEDLMAIER , ARMIN WILLMEROTH , ZUNDEL MARKUS , HIRLER FRANZ , MITTAL ALLUNYAI
IPC分类号： H01L29/78 , H01L21/336 , H01L27/04 , H01L29/06 , H01L29/47 , H01L29/739 , H01L29/872
CPC分类号： H01L29/872
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor device having a drift path or a drift region with low on-resistance.SOLUTION: A semiconductor device comprises: a drift region 2 of a first conductivity type in a semiconductor base material; a drift control region 3 that is disposed adjacent to the drift region 2 in the semiconductor base material and is composed of a semiconductor material; an accumulation dielectric 4 disposed between the drift region 2 and the drift control region 3; a base-material region 8; a drain region 5 that is isolated from the base-material region 8 and is adjacent to the accumulation dielectric 4; a source region 9 isolated from the drift region 2 by the base-material region 8; a gate electrode 15 insulated from the semiconductor base material by a gate dielectric 16, and extending from the source region 9 to the drift region 2 adjacently to the base-material region 8; a drain electrode 11 contacting the drain region 5; and a semiconductor region 27 complementarily doped to the drain region 5. The semiconductor region 27 is disposed between the drain electrode 11 and the drift region 2 and is adjacent to the drain electrode 11.
摘要翻译：要解决的问题：提供具有低导通电阻的漂移路径或漂移区域的功率半导体器件。解决方案：半导体器件包括：半导体基底材料中的第一导电类型的漂移区域2; 漂移控制区域3，其设置在半导体基材中与漂移区域2相邻并且由半导体材料构成; 布置在漂移区域2和漂移控制区域3之间的积聚电介质4; 基材区域8; 与基材区域8隔离并与蓄电介质4相邻的漏极区域5; 通过基材区域8与漂移区域2隔离的源极区域9; 栅电极15，通过栅极电介质16与半导体基底材料绝缘，并且从源极区域9延伸到与基底材料区域8相邻的漂移区域2; 与漏区5接触的漏电极11; 半导体区域27配置在漏极电极11和漂移区域2之间，并与漏电极11相邻。版权所有：（C）2012，JPO＆INPIT

2. 发明专利

JP2012186479A Semiconductor element with drift region and drift control region 有权
标题翻译：具有DRIFT区域和DRIFT控制区域的半导体元件
公开(公告)号：JP2012186479A
公开(公告)日：2012-09-27
申请号：JP2012085845
申请日：2012-04-04
申请人： Infineon Technologies Austria Ag , インフィネオンテクノロジーズオーストリアアクチエンゲゼルシャフト
发明人： FRANK FIRSCH , ANTON MAUDER , HANS-JOACHIM SCHULZE , STEFAN SEDLMAIER , ARMIN WILLMEROTH , ZUNDEL MARKUS , HIRLER FRANZ , MITTAL ALLUNYAI
IPC分类号： H01L29/78 , H01L21/336 , H01L21/8234 , H01L27/04 , H01L27/06 , H01L27/088 , H01L29/06 , H01L29/47 , H01L29/786 , H01L29/861 , H01L29/868 , H01L29/872
CPC分类号： H01L29/872
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor element, especially a power semiconductor element, with a drift route/drift region having a low on resistance.SOLUTION: The semiconductor element has: a semiconductor body 100; a drift region 2 made of a semiconductor material and provided in the semiconductor body 100; a drift control region 3 made of a semiconductor material, and placed, at least in sections, adjacent to the drift region 2, and including a connection electrode 19; an accumulation dielectric 4 placed between the drift region 2 and the drift control region 3; a first element region 8; a second element region 5 placed away from the first element region 8, the drift region 2 being placed between the second element region 5 and the first element region 8; and a capacitive element 50 connected between the connection electrode 19 of the drift control region 3 and the first element region 8.
摘要翻译：要解决的问题：提供具有导通电阻低的漂移路径/漂移区的半导体元件，特别是功率半导体元件。解决方案：半导体元件具有：半导体本体100; 设置在半导体本体100中的由半导体材料制成的漂移区域2; 由半导体材料制成的漂移控制区域3，至少部分地与漂移区域2相邻并且包括连接电极19; 放置在漂移区2和漂移控制区3之间的积聚电介质4; 第一元件区域8; 远离第一元件区域8放置的第二元件区域5，漂移区域2放置在第二元件区域5和第一元件区域8之间; 以及连接在漂移控制区域3的连接电极19与第一元件区域8之间的电容元件50.版权所有（C）2012，JPO＆INPIT

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