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1. 发明申请

US20050202639A1 Method of manufacturing memory device comprising gate having uniformly distributed silicon nano dots 审中-公开
标题翻译：包括具有均匀分布的硅纳米点的栅极的存储器件的方法
公开(公告)号：US20050202639A1
公开(公告)日：2005-09-15
申请号：US11071192
申请日：2005-03-04
申请人： In-kyeong Yoo , Soo-hwan Jeong , Won-il Ryu
发明人： In-kyeong Yoo , Soo-hwan Jeong , Won-il Ryu
IPC分类号： H01L27/10 , H01L21/28 , H01L21/335 , H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792 , H01L21/336
CPC分类号： H01L29/42332 , B82Y10/00 , H01L27/115 , H01L27/11521 , H01L29/40114 , H01L29/7883
摘要： Provided is a method of manufacturing a memory device that comprises a gate including uniformly distributed silicon nano dots. The method includes forming a gate on a substrate, the gate including, stacked in sequence an insulating film, nano dot layers separated by a predetermined lateral distance, and a conductive film pattern, forming a source region and a drain region contacting the gate in the substrate, and forming first and second metal layers on the source region and the drain region, respectively.
摘要翻译：提供一种制造包括均匀分布的硅纳米点的栅极的存储器件的方法。该方法包括在衬底上形成栅极，栅极包括依次层叠绝缘膜，以预定横向距离分隔的纳米点层和导电膜图案，形成与栅极接触的源极区域和漏极区域并且分别在源极区域和漏极区域上形成第一和第二金属层。

2. 发明授权

US07901586B2 Method of manufacturing self-ordered nanochannel-array and method of manufacturing nanodot using the nanochannel-array 失效
标题翻译：使用纳米通道阵列制造自定序纳米通道阵列的方法和制造纳米点的方法
公开(公告)号：US07901586B2
公开(公告)日：2011-03-08
申请号：US11882112
申请日：2007-07-30
申请人： In-kyeong Yoo , Soo-hwan Jeong , Sun-ae Seo , In-sook Kim
发明人： In-kyeong Yoo , Soo-hwan Jeong , Sun-ae Seo , In-sook Kim
IPC分类号： B44C1/22 , H01L21/302
CPC分类号： B82B3/00 , B29C59/022 , B29C59/026 , B29C2059/023 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/32139
摘要： A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.
摘要翻译：提供一种制造纳米通道阵列的方法和使用纳米通道阵列制造纳米点的方法。纳米通道阵列制造方法包括：执行第一阳极氧化以形成具有由铝基板上的多个空腔形成的沟道阵列的第一氧化铝层; 将第一氧化铝层蚀刻到预定深度并在铝基板上形成多个凹部，其中每个凹部对应于第一氧化铝层的每个通道的底部; 以及进行第二阳极氧化以形成具有与所述铝基板上的所述多个凹部对应的多个通道的阵列的第二氧化铝层。阵列制造方法使得可以使用空腔获得精细排列的空腔并形成纳米级点。

3. 发明授权

US06953946B2 Emitter for electron-beam projection lithography system and manufacturing method thereof 失效
标题翻译：电子束投影光刻系统的发射体及其制造方法
公开(公告)号：US06953946B2
公开(公告)日：2005-10-11
申请号：US10674459
申请日：2003-10-01
申请人： In-kyeong Yoo , Chang-wook Moon , Soo-hwan Jeong , Dong-wook Kim
发明人： In-kyeong Yoo , Chang-wook Moon , Soo-hwan Jeong , Dong-wook Kim
IPC分类号： G03F7/20 , H01J1/312 , H01J9/02 , H01J37/06 , H01J37/073 , H01J37/305 , H01L21/027 , H01L29/06 , H01L29/12 , H01L29/82 , H01L43/00
CPC分类号： B82Y10/00 , H01J1/312 , H01J9/022 , H01J9/027 , H01J2237/31774 , H01J2237/31783
摘要： An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.
摘要翻译：提供了一种用于电子束投影光刻（EPL）系统的发射器及其制造方法。电子束发射器包括衬底，覆盖衬底的绝缘层，以及包括形成在绝缘层顶部上的基底层至均匀厚度的栅极电极和以预定的方式形成在基底层上的电子束阻挡层模式。该制造方法包括以下步骤：制备衬底; 在所述基板上形成绝缘层; 通过在所述绝缘层上沉积导电金属至预定厚度来形成栅电极的基层; 通过在基底层上沉积能够阳极氧化的金属至预定的厚度来形成栅电极的电子束阻挡层; 并通过阳极氧化将预定图案中的电子束阻挡层图案化。发射极在绝缘层内提供均匀的电场，并简化其制造方法。

4. 发明授权

US06913984B2 Method of manufacturing memory with nano dots 有权
标题翻译：用纳米点制造记忆的方法
公开(公告)号：US06913984B2
公开(公告)日：2005-07-05
申请号：US10743377
申请日：2003-12-23
申请人： In-sook Kim , Sun-ae Seo , In-kyeong Yoo , Soo-hwan Jeong
发明人： In-sook Kim , Sun-ae Seo , In-kyeong Yoo , Soo-hwan Jeong
IPC分类号： B82B1/00 , H01L21/28 , H01L21/8247 , H01L27/115 , H01L29/06 , H01L29/423 , H01L29/788 , H01L29/792 , H01L21/76
CPC分类号： B82Y10/00 , H01L21/28273 , H01L21/28282 , H01L29/42332 , H01L29/7881 , H01L29/792 , Y10S977/723 , Y10S977/774
摘要： A method of fabricating memory with nano dots includes sequentially depositing a first insulating layer, a charge storage layer, a sacrificial layer, and a metal layer on a substrate in which source and drain electrodes are formed, forming a plurality of holes on the resultant structure by anodizing the metal layer and oxidizing portions of the sacrificial layer that are exposed through the holes, patterning the charge storage layer to have nano dots by removing the oxidized metal layer, and etching the sacrificial layer and the charge storage layer using the oxidized sacrificial layer as a mask, and removing the oxidized sacrificial layer, depositing a second insulating layer and a gate electrode on the patterned charge storage layer, and patterning the first insulating layer, the patterned charge storage layer, the second insulating layer, and the gate electrode to a predetermined shape, for forming memory having uniformly distributed nano-scale storage nodes.
摘要翻译：利用纳米点制造存储器的方法包括在形成源极和漏极的衬底上依次沉积第一绝缘层，电荷存储层，牺牲层和金属层，在所得结构上形成多个孔通过阳极氧化金属层并氧化通过孔露出的牺牲层的部分，通过去除氧化的金属层将电荷存储层图案化成具有纳米点，并且使用氧化的牺牲层蚀刻牺牲层和电荷存储层作为掩模，并且去除氧化的牺牲层，在图案化的电荷存储层上沉积第二绝缘层和栅电极，并且将第一绝缘层，图案化电荷存储层，第二绝缘层和栅电极图案化，以用于形成具有均匀分布的纳米级存储节点的存储器的预定形状。

5. 发明申请

US20080257861A1 Method of manufacturing self-ordered nanochannel-array and method of manufacturing nanodot using the nanochannel-array 失效
标题翻译：使用纳米通道阵列制造自定序纳米通道阵列的方法和制造纳米点的方法
公开(公告)号：US20080257861A1
公开(公告)日：2008-10-23
申请号：US11882112
申请日：2007-07-30
申请人： In-kyeong Yoo , Soo-hwan Jeong , Sun-ae Seo , In-sook Kim
发明人： In-kyeong Yoo , Soo-hwan Jeong , Sun-ae Seo , In-sook Kim
IPC分类号： B44C1/22
CPC分类号： B82B3/00 , B29C59/022 , B29C59/026 , B29C2059/023 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/32139
摘要： A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.
摘要翻译：提供一种制造纳米通道阵列的方法和使用纳米通道阵列制造纳米点的方法。纳米通道阵列制造方法包括：执行第一阳极氧化以形成具有由铝基板上的多个空腔形成的沟道阵列的第一氧化铝层; 将第一氧化铝层蚀刻到预定深度并在铝基板上形成多个凹部，其中每个凹部对应于第一氧化铝层的每个通道的底部; 以及进行第二阳极氧化以形成具有与所述铝基板上的所述多个凹部对应的多个通道的阵列的第二氧化铝层。阵列制造方法使得可以使用空腔获得精细排列的空腔并形成纳米级点。

6. 发明授权

US07115306B2 Method of horizontally growing carbon nanotubes and device having the same 有权
标题翻译：水平生长碳纳米管的方法及其装置
公开(公告)号：US07115306B2
公开(公告)日：2006-10-03
申请号：US11036379
申请日：2005-01-18
申请人： Soo-hwan Jeong , Wan-jun Park , In-kyeong Yoo , Ju-hye Ko
发明人： Soo-hwan Jeong , Wan-jun Park , In-kyeong Yoo , Ju-hye Ko
IPC分类号： H05H1/24
CPC分类号： C30B29/602 , B82Y30/00 , B82Y40/00 , C01B32/162 , C23C26/00 , C30B25/00 , H01J1/304 , H01J9/025 , H01J2201/30469
摘要： Provided are a method of growing carbon nanotubes and a carbon nanotube device. The method includes: depositing an aluminum layer on a substrate; forming an insulating layer over the substrate to cover the aluminum layer; patterning the insulating layer and the aluminum layer on the substrate to expose a side of the aluminum layer; forming a plurality of holes in the exposed side of the aluminum layer to a predetermined depth; depositing a catalyst metal layer on the bottoms of the holes; and growing the carbon nanotubes from the catalyst metal layer.
摘要翻译：提供生长碳纳米管和碳纳米管装置的方法。该方法包括：在基底上沉积铝层; 在所述基板上形成绝缘层以覆盖所述铝层; 将绝缘层和铝层图案化在基板上以暴露铝层的一侧; 在铝层的暴露侧形成多个孔至预定深度; 在所述孔的底部沉积催化剂金属层; 并从催化剂金属层生长碳纳米管。

7. 发明授权

US07282446B2 Method of manufacturing self-ordered nanochannel-array and method of manufacturing nanodot using the nanochannel-array 有权
标题翻译：使用纳米通道阵列制造自定序纳米通道阵列的方法和制造纳米点的方法
公开(公告)号：US07282446B2
公开(公告)日：2007-10-16
申请号：US10819143
申请日：2004-04-07
申请人： In-kyeong Yoo , Soo-hwan Jeong , Sun-ae Seo , In-sook Kim
发明人： In-kyeong Yoo , Soo-hwan Jeong , Sun-ae Seo , In-sook Kim
IPC分类号： H01L21/302
CPC分类号： B82B3/00 , B29C59/022 , B29C59/026 , B29C2059/023 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/32139
摘要： A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.
摘要翻译：提供一种制造纳米通道阵列的方法和使用纳米通道阵列制造纳米点的方法。纳米通道阵列制造方法包括：执行第一阳极氧化以形成具有由铝基板上的多个空腔形成的沟道阵列的第一氧化铝层; 将第一氧化铝层蚀刻到预定深度并在铝基板上形成多个凹部，其中每个凹部对应于第一氧化铝层的每个通道的底部; 以及进行第二阳极氧化以形成具有与所述铝基板上的所述多个凹部对应的多个通道的阵列的第二氧化铝层。阵列制造方法使得可以使用空腔获得精细排列的空腔并形成纳米级点。

8. 发明申请

US20050145835A1 Emitter for electron-beam projection lithography system and manufacturing method thereof 有权
公开(公告)号：US20050145835A1
公开(公告)日：2005-07-07
申请号：US11057469
申请日：2005-02-15
申请人： In-kyeong Yoo , Chang-wook Moon , Soo-hwan Jeong , Dong-wook Kim
发明人： In-kyeong Yoo , Chang-wook Moon , Soo-hwan Jeong , Dong-wook Kim
IPC分类号： G03F7/20 , H01J1/312 , H01J9/02 , H01J37/06 , H01J37/073 , H01J37/305 , H01L21/027 , H01L29/06 , H01L21/00
CPC分类号： B82Y10/00 , H01J1/312 , H01J9/022 , H01J9/027 , H01J2237/31774 , H01J2237/31783
摘要： An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.

9. 发明授权

US06998162B2 Optical recording medium with phase transition layer and method of manufacturing the optical recording medium 有权
标题翻译：具有相变层的光记录介质和制造光记录介质的方法
公开(公告)号：US06998162B2
公开(公告)日：2006-02-14
申请号：US10441122
申请日：2003-05-20
申请人： In-kyeong Yoo , Soo-hwan Jeong , In-sook Kim
发明人： In-kyeong Yoo , Soo-hwan Jeong , In-sook Kim
IPC分类号： B32B3/02
CPC分类号： G11B7/26 , G11B7/24035 , G11B7/241 , Y10T428/21
摘要： An optical recording medium having a phase transition material film and a method of manufacturing the optical recording medium are provided. In the method, first, a phase transition material film, a sacrificial film, and a metal film are sequentially stacked on a substrate. Next, the metal film is anodized to form a metal oxide film having a plurality of holes, and portions of the sacrificial film exposed through the holes are anode-oxidized to form oxide films. Thereafter, the phase transition material film is patterned by removing the metal oxide film and by etching the sacrificial film and the phase transition material film using the oxide films as a mask. Then, the oxide films are removed from the sacrificial film, and an upper insulation film, a reflection film, and a protection film are deposited on the upper surface of the patterned phase transition material film. The optical recording medium can be simply manufactured by using a self-alignment method and can have a highly-integrated large-capacity memory.
摘要翻译：提供具有相变材料膜的光记录介质和制造光记录介质的方法。在该方法中，首先，将相变材料膜，牺牲膜和金属膜依次层叠在基板上。接下来，金属膜被阳极化以形成具有多个孔的金属氧化物膜，并且通过孔露出的部分牺牲膜被阳极氧化以形成氧化物膜。此后，通过去除金属氧化物膜并且通过使用氧化膜作为掩模蚀刻牺牲膜和相变材料膜来对相变材料膜进行图案化。然后，从牺牲膜上除去氧化物膜，并且在图案化的相变材料膜的上表面上沉积上绝缘膜，反射膜和保护膜。光记录介质可以通过使用自对准方法简单地制造，并且可以具有高度集成的大容量存储器。

10. 发明申请

US20070207619A1 METHOD OF MANUFACTURING SELF-ORDERED NANOCHANNEL-ARRAY AND METHOD OF MANUFACTURING NANODOT USING THE NANOCHANNEL-ARRAY 有权
标题翻译：自制纳米管阵列的制造方法及使用纳米通道阵列制造纳米光的方法
公开(公告)号：US20070207619A1
公开(公告)日：2007-09-06
申请号：US10819143
申请日：2004-04-07
申请人： In-kyeong Yoo , Soo-hwan Jeong , Sun-ae Seo , In-sook Kim
发明人： In-kyeong Yoo , Soo-hwan Jeong , Sun-ae Seo , In-sook Kim
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： B82B3/00 , B29C59/022 , B29C59/026 , B29C2059/023 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/32139
摘要： A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.
摘要翻译：提供一种制造纳米通道阵列的方法和使用纳米通道阵列制造纳米点的方法。纳米通道阵列制造方法包括：执行第一阳极氧化以形成具有由铝基板上的多个空腔形成的沟道阵列的第一氧化铝层; 将第一氧化铝层蚀刻到预定深度并在铝基板上形成多个凹部，其中每个凹部对应于第一氧化铝层的每个通道的底部; 以及进行第二阳极氧化以形成具有与所述铝基板上的所述多个凹部对应的多个通道的阵列的第二氧化铝层。阵列制造方法使得可以使用空腔获得精细排列的空腔并形成纳米级点。

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