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    • 9. 发明授权
    • Non-volatile memory cell programming method
    • 非易失性存储单元编程方法
    • US07907452B2
    • 2011-03-15
    • US12081569
    • 2008-04-17
    • Sang-jin ParkKwang-soo Seol
    • Sang-jin ParkKwang-soo Seol
    • G11C16/04G11C16/06G11C16/10G11C16/12
    • G11C16/10
    • A non-volatile memory cell programming method of programming 2-bit data in a memory cell having 4 threshold voltage distributions may include a first program operation of programming a first bit of the 2-bit data in the memory cell by applying a first programming voltage to the memory cell; a second program operation of programming a second bit of the 2-bit data in the memory cell by applying a second programming voltage to the memory cell; and a stabilization operation of applying a stabilization voltage having an electric field opposite in polarity to an electric field formed by the first and second programming voltages to the memory cell after one of the first and second program operations that corresponds to a higher one of the first and second programming voltages is performed.
    • 在具有4个阈值电压分布的存储单元中编程2位数据的非易失性存储单元编程方法可以包括通过施加第一编程电压来对存储单元中的2位数据的第一位进行编程的第一编程操作 到记忆体; 第二编程操作,通过向存储单元施加第二编程电压来对存储器单元中的2位数据的第二位进行编程; 以及在第一和第二编程操作中的一个对应于第一和第二编程电压中较高的一个的第一和第二编程操作之一之后,将具有与第一和第二编程电压形成的电场的极性相反的电场的稳定电压施加到存储单元的稳定操作 并执行第二编程电压。