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1. 发明授权

US09441030B2 Process for producing and purifying factor VIII and its derivatives 有权
标题翻译：生产和净化因子VIII及其衍生物的方法
公开(公告)号：US09441030B2
公开(公告)日：2016-09-13
申请号：US12528204
申请日：2007-02-23
申请人： In-Young Song , Hun-Taek Kim , Jong-Wan Kim , Yong-Kook Kim , Jong-Il Ryu , Dae-Kee Kim
发明人： In-Young Song , Hun-Taek Kim , Jong-Wan Kim , Yong-Kook Kim , Jong-Il Ryu , Dae-Kee Kim
IPC分类号： C07K14/755
CPC分类号： C07K14/755 , C07K1/22
摘要： Disclosed is a method for producing proteins having factor VIII procoagulant activity in serum-free medium by in vitro culturing of mammalian cells, wherein the serum-free medium contains an inhibitor against the protease released from cultured cells. In accordance with this invention, the inhibitor can protect the cleavage of a target protein during cultivation and increase homogeneity of a target molecule, wherein the inhibitor can be a dextran sulfate. This invention also relates to a method of purifying target molecules from the culture medium containing both a target molecule and selected inhibitors by affinity chromatography.
摘要翻译：公开了一种通过体外培养哺乳动物细胞产生在无血清培养基中具有因子VIII促凝血活性的蛋白质的方法，其中无血清培养基含有针对由培养细胞释放的蛋白酶的抑制剂。根据本发明，抑制剂可以保护培养期间靶蛋白的切割并增加目标分子的均匀性，其中抑制剂可以是硫酸葡聚糖。本发明还涉及通过亲和层析从含有靶分子和选择的抑制剂的培养基中纯化目标分子的方法。

2. 发明申请

US20100112641A1 PROCESS FOR PRODUCING AND PURIFYING FACTOR VIII AND ITS DERIVATIVES 有权
标题翻译：生产和净化因子VIII及其衍生物的方法
公开(公告)号：US20100112641A1
公开(公告)日：2010-05-06
申请号：US12528204
申请日：2007-02-23
申请人： In-Young Song , Hun-Taek Kim , Jong-Wan Kim , Yong-Kook Kim , Jong-II Ryu , Dae-Kee Kim
发明人： In-Young Song , Hun-Taek Kim , Jong-Wan Kim , Yong-Kook Kim , Jong-II Ryu , Dae-Kee Kim
IPC分类号： C12P21/04
CPC分类号： C07K14/755 , C07K1/22
摘要： Disclosed is a method for producing proteins having factor VIII procoagulant activity in serum-free medium by in vitro culturing of mammalian cells, wherein the serum-free medium contains an inhibitor against the protease released from cultured cells. In accordance with this invention, the inhibitor can protect the cleavage of a target protein during cultivation and increase homogeneity of a target molecule, wherein the inhibitor can be a dextran sulfate. This invention also relates to a method of purifying target molecules from the culture medium containing both a target molecule and selected inhibitors by affinity chromatography.
摘要翻译：公开了一种通过体外培养哺乳动物细胞产生在无血清培养基中具有因子VIII促凝血活性的蛋白质的方法，其中无血清培养基含有针对由培养细胞释放的蛋白酶的抑制剂。根据本发明，抑制剂可以保护培养期间靶蛋白的切割并增加目标分子的均匀性，其中抑制剂可以是硫酸葡聚糖。本发明还涉及通过亲和层析从含有靶分子和选择的抑制剂的培养基中纯化目标分子的方法。

3. 发明授权

US08350262B2 Nonvolatile memory device and nonvolatile memory array including the same 有权
标题翻译：非易失性存储器件和包括其的非易失性存储器阵列
公开(公告)号：US08350262B2
公开(公告)日：2013-01-08
申请号：US12929121
申请日：2011-01-03
申请人： Myoung-Jae Lee , In-Kyeong Yoo , Eun-Hong Lee , Jong-Wan Kim , Dong-Chul Kim , Seung-Eon Ahn
发明人： Myoung-Jae Lee , In-Kyeong Yoo , Eun-Hong Lee , Jong-Wan Kim , Dong-Chul Kim , Seung-Eon Ahn
IPC分类号： H01L29/10 , H01L29/12
CPC分类号： H01L27/1021 , G11C11/5685 , G11C13/0007 , G11C13/003 , G11C2213/73
摘要： A nonvolatile memory device having self-presence diode characteristics, and/or a nonvolatile memory array including the nonvolatile memory device may be provided. The nonvolatile memory device may include a lower electrode, a first semiconductor oxide layer on the lower electrode, a second semiconductor oxide layer on the first semiconductor oxide layer, and/or an upper electrode on the second semiconductor oxide layer.
摘要翻译：可以提供具有自身存在二极管特性的非易失性存储器件和/或包括非易失性存储器件的非易失性存储器阵列。非易失性存储器件可以包括下电极，下电极上的第一半导体氧化物层，第一半导体氧化物层上的第二半导体氧化物层，和/或第二半导体氧化物层上的上电极。

4. 发明申请

US20110095287A1 Nonvolatile memory device and nonvolatile memory array including the same 有权
标题翻译：非易失性存储器件和包括其的非易失性存储器阵列
公开(公告)号：US20110095287A1
公开(公告)日：2011-04-28
申请号：US12929121
申请日：2011-01-03
申请人： Myoung-Jae Lee , In-Kyeong Yoo , Eun-Hong Lee , Jong-Wan Kim , Dong-Chul Kim , Seung-Eon Ahn
发明人： Myoung-Jae Lee , In-Kyeong Yoo , Eun-Hong Lee , Jong-Wan Kim , Dong-Chul Kim , Seung-Eon Ahn
IPC分类号： H01L29/12
CPC分类号： H01L27/1021 , G11C11/5685 , G11C13/0007 , G11C13/003 , G11C2213/73
摘要： A nonvolatile memory device having self-presence diode characteristics, and/or a nonvolatile memory array including the nonvolatile memory device may be provided. The nonvolatile memory device may include a lower electrode, a first semiconductor oxide layer on the lower electrode, a second semiconductor oxide layer on the first semiconductor oxide layer, and/or an upper electrode on the second semiconductor oxide layer.
摘要翻译：可以提供具有自身存在二极管特性的非易失性存储器件和/或包括非易失性存储器件的非易失性存储器阵列。非易失性存储器件可以包括下电极，下电极上的第一半导体氧化物层，第一半导体氧化物层上的第二半导体氧化物层，和/或第二半导体氧化物层上的上电极。

5. 发明申请

US20070205456A1 Nonvolatile memory device and nonvolatile memory array including the same 有权
标题翻译：非易失性存储器件和包括其的非易失性存储器阵列
公开(公告)号：US20070205456A1
公开(公告)日：2007-09-06
申请号：US11711616
申请日：2007-02-28
申请人： Myoung-Jae Lee , In-Kyeong Yoo , Eun-Hong Lee , Jong-Wan Kim , Dong-Chul Kim , Seung-Eon Ahn
发明人： Myoung-Jae Lee , In-Kyeong Yoo , Eun-Hong Lee , Jong-Wan Kim , Dong-Chul Kim , Seung-Eon Ahn
IPC分类号： H01L29/76
CPC分类号： H01L27/1021 , G11C11/5685 , G11C13/0007 , G11C13/003 , G11C2213/73
摘要： A nonvolatile memory device having self-presence diode characteristics, and/or a nonvolatile memory array including the nonvolatile memory device may be provided. The nonvolatile memory device may include a lower electrode, a first semiconductor oxide layer on the lower electrode, a second semiconductor oxide layer on the first semiconductor oxide layer, and/or an upper electrode on the second semiconductor oxide layer.
摘要翻译：可以提供具有自身存在二极管特性的非易失性存储器件和/或包括非易失性存储器件的非易失性存储器阵列。非易失性存储器件可以包括下电极，下电极上的第一半导体氧化物层，第一半导体氧化物层上的第二半导体氧化物层，和/或第二半导体氧化物层上的上电极。

6. 发明授权

US07943926B2 Nonvolatile memory device and nonvolatile memory array including the same 有权
公开(公告)号：US07943926B2
公开(公告)日：2011-05-17
申请号：US11711616
申请日：2007-02-28
申请人： Myoung-Jae Lee , In-Kyeong Yoo , Eun-Hong Lee , Jong-Wan Kim , Dong-Chul Kim , Seung-Eon Ahn
发明人： Myoung-Jae Lee , In-Kyeong Yoo , Eun-Hong Lee , Jong-Wan Kim , Dong-Chul Kim , Seung-Eon Ahn
IPC分类号： H01L29/10 , H01L29/12
CPC分类号： H01L27/1021 , G11C11/5685 , G11C13/0007 , G11C13/003 , G11C2213/73
摘要： A nonvolatile memory device having self-presence diode characteristics, and/or a nonvolatile memory array including the nonvolatile memory device may be provided. The nonvolatile memory device may include a lower electrode, a first semiconductor oxide layer on the lower electrode, a second semiconductor oxide layer on the first semiconductor oxide layer, and/or an upper electrode on the second semiconductor oxide layer.

7. 发明申请

US20100101064A1 IMPROVEMENT APPARATUS OF SURFACE ROUGHNESS DEFECT OF HOT/COLD ROLLED STAINLESS STEEL COILS AND THE METHOD THEREOF 审中-公开
标题翻译：热/冷轧不锈钢线圈的表面粗糙度缺陷的改进设备及其方法
公开(公告)号：US20100101064A1
公开(公告)日：2010-04-29
申请号：US12516156
申请日：2007-09-12
申请人： Jong-Wan Kim , Jung-Ki Kim , Joung-Mo Lee , Dong-Sik Kim
发明人： Jong-Wan Kim , Jung-Ki Kim , Joung-Mo Lee , Dong-Sik Kim
IPC分类号： B21B45/00 , B21B45/08 , B21B45/04
CPC分类号： B21B45/08 , B21B3/02 , Y10T29/4544 , Y10T29/4561 , Y10T29/4567 , Y10T83/242
摘要： Disclosed is to an improvement apparatus of surface roughness of hot/cold rolled stainless steel coils and the method thereof. The present invention provides an improvement apparatus of surface roughness of hot/cold rolled stainless steel coils including a water spray unit for spraying water on a surface of a cast stainless steel slab; a cutting unit for cutting the stainless steel slab; and a high-pressure water spray having at least one nozzle in a region where the stainless steel slab is cut by the cutting unit and discharged and installed to be symmetric in upper and lower parts of the stainless steel slab; and a roller brush installed to be in contact with and symmetric in the upper and lower parts of the stainless steel slab passed through the water spray so as to rotate at a high speed. Accordingly, the improvement apparatus according to the present invention may be useful to produce a stainless steel slab having an excellent surface quality since it is possible to easily remove the scale and mold slag from the stainless steel slab.
摘要翻译：本发明公开了一种热轧不锈钢卷材表面粗糙度的改进装置及其制造方法。本发明提供了一种包括用于在铸造不锈钢板的表面上喷水的喷水单元的热/冷轧不锈钢卷材表面粗糙度的改进装置，用于切割不锈钢板的切割单元; 以及在不锈钢板被切割单元切割的区域中具有至少一个喷嘴的高压喷水器，并且在不锈钢板的上部和下部排出并安装成对称的区域; 以及安装成与穿过喷水头的不锈钢板的上部和下部接触并对称的辊刷，以便高速旋转。因此，根据本发明的改进装置可以用于生产具有优异表面质量的不锈钢板，因为可以容易地从不锈钢板上去除垢和模具渣。

8. 发明申请

US20090138223A1 On-Line Quality Prediction System for Stainless Steel Slab and the Predicting Method Using It 审中-公开
标题翻译：不锈钢板在线质量预测系统及其预测方法
公开(公告)号：US20090138223A1
公开(公告)日：2009-05-28
申请号：US11992736
申请日：2006-09-27
申请人： Jong-Wan Kim , Ja-Yong Choi , Bo-Sung Seo
发明人： Jong-Wan Kim , Ja-Yong Choi , Bo-Sung Seo
IPC分类号： G06F19/00
CPC分类号： G05B19/41875 , B22D11/16 , G05B2219/32194 , Y02P90/18 , Y02P90/22
摘要： Disclosed is an on-line quality prediction system for stainless steel slab and the predicting method using it, which can allow produced slab quality to predict in high precision on the on-line using a network based system by collecting all operation data available from a steel making process to a continuous casting process and then using them as a metallurgical calculation evaluating model through thermodynamics and statistics programs, the system comprises: a main computer collecting and storing information from a production line for the stainless steel slab; a thermodynamics calculation only computer mutually communicating with the main computer; and a server computer mutually communicating with the main computer, whereby it can overcome a limitation of a predicting method due to existing operation data and allow produced slab quality to predict in high precision on the on-line using a network based system by collecting all operation data available from a steel making process to a continuous casting process and then using them as a metallurgical calculation evaluating model through thermodynamics and statistics programs, significantly improving quality and productivity.
摘要翻译：公开了一种用于不锈钢板的在线质量预测系统及其使用的预测方法，其可以使用基于网络的系统在线准确地预测制造的板坯质量，通过收集钢中可获得的所有操作数据制造过程进行连续铸造，然后通过热力学和统计程序将其用作冶金计算评估模型，该系统包括：收集和存储不锈钢板生产线信息的主计算机; 仅与计算机相互通信的热力学计算机; 以及与主计算机相互通信的服务器计算机，由此可以克服由于现有操作数据引起的预测方法的限制，并且通过收集所有操作，允许生产的平板质量在网上使用基于网络的系统在线准确地预测从制钢过程到连续铸造过程的数据，然后通过热力学和统计程序将其用作冶金计算评估模型，显着提高质量和生产率。

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