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    • 5. 发明申请
    • WAFER TEST METHOD AND WAFER TEST APPARATUS
    • WAFER测试方法和WAFER测试设备
    • US20100200431A1
    • 2010-08-12
    • US12704206
    • 2010-02-11
    • Youngok KimJeongnam HanChangki HongBoun YoonKuntack LeeYoung-Hoo Kim
    • Youngok KimJeongnam HanChangki HongBoun YoonKuntack LeeYoung-Hoo Kim
    • G01N27/26
    • H01L22/14
    • The inventive concept provides a wafer test method and a wafer test apparatus. The wafer test method can recognize the amount of residuals generated in a sidewall of the metal-containing layer pattern and the extent of corrosion of a sidewall of the metal-containing layer pattern using the measured electric resistance by supplying an electrolyte so that the electrolyte is in contact with a portion of the metal-containing layer pattern in a predetermined chip region and measuring an electric resistance between a first electrode which is electrically in contact with the other portion of the metal-containing layer pattern and a second electrode which is in contact with the electrolyte in the predetermined region. Thus, a wafer test method and a wafer test apparatus can be embodied by an in-line method without dividing a wafer into each chip.
    • 本发明的概念提供了晶片测试方法和晶片测试装置。 晶片测试方法可以通过提供电解质来确定含金属层图案的侧壁中产生的残留量以及含金属层图案的侧壁的腐蚀程度,使得电解质为 与预定芯片区域中的含金属层图案的一部分接触,并且测量与含金属层图案的另一部分电接触的第一电极和接触的第二电极之间的电阻 电解液在预定区域内。 因此,可以通过在线方式来实现晶片测试方法和晶片测试装置,而不将晶片分成每个芯片。
    • 6. 发明授权
    • Method and apparatus for controlled transient cavitation
    • 用于控制瞬态空化的方法和装置
    • US08202369B2
    • 2012-06-19
    • US12119313
    • 2008-05-12
    • Frank HolsteynsKuntack Lee
    • Frank HolsteynsKuntack Lee
    • B08B7/04B08B7/00B08B7/02
    • B08B3/02B08B3/12B08B2203/0288G10K15/043H01L21/02052H01L21/67051H01L21/67057Y10S134/902
    • Methods and apparatus for creating and controlling transient cavitation are disclosed. An example method includes selecting a range of bubble sizes to be created in a liquid and selecting characteristics for an acoustic field to be applied to the liquid. The method further includes creating gas bubbles of the selected range of bubble sizes in the liquid, creating an acoustic field with the selected characteristics and subjecting the liquid to the acoustic field. In the example method, at least one of the range of bubble sizes and the characteristics of the acoustic field is selected in correspondence with the other so as to control transient cavitation in the liquid for the selected range of bubble sizes. Particularly, the methods and apparatus may be used for the cleaning of a surface, such as a semiconductor substrate.
    • 公开了用于创建和控制瞬时空化的方法和装置。 一个示例性方法包括选择要在液体中产生的气泡大小的范围,并选择要施加到液体的声场的特性。 该方法还包括在液体中产生气泡尺寸选定范围的气泡,产生具有选定特性的声场并使液体经受声场。 在该示例性方法中,气泡尺寸范围和声场的特性中的至少一个与另一个对应地选择,以便在所选择的气泡尺寸范围内控制液体中的瞬时空化。 特别地,所述方法和装置可用于清洁表面,例如半导体衬底。
    • 10. 发明授权
    • Wafer test method and wafer test apparatus
    • 晶圆试验方法和晶圆试验装置
    • US08228089B2
    • 2012-07-24
    • US12704206
    • 2010-02-11
    • Youngok KimJeongnam HanChangki HongBoun YoonKuntack LeeYoung-Hoo Kim
    • Youngok KimJeongnam HanChangki HongBoun YoonKuntack LeeYoung-Hoo Kim
    • G01R31/26G01R31/08H01L21/66
    • H01L22/14
    • The inventive concept provides a wafer test method and a wafer test apparatus. The wafer test method can recognize the amount of residuals generated in a sidewall of the metal-containing layer pattern and the extent of corrosion of a sidewall of the metal-containing layer pattern using the measured electric resistance by supplying an electrolyte so that the electrolyte is in contact with a portion of the metal-containing layer pattern in a predetermined chip region and measuring an electric resistance between a first electrode which is electrically in contact with the other portion of the metal-containing layer pattern and a second electrode which is in contact with the electrolyte in the predetermined region. Thus, a wafer test method and a wafer test apparatus can be embodied by an in-line method without dividing a wafer into each chip.
    • 本发明的概念提供了晶片测试方法和晶片测试装置。 晶片测试方法可以通过提供电解质来确定含金属层图案的侧壁中产生的残留量以及含金属层图案的侧壁的腐蚀程度,使得电解质为 与预定芯片区域中的含金属层图案的一部分接触,并且测量与含金属层图案的另一部分电接触的第一电极和接触的第二电极之间的电阻 电解液在预定区域内。 因此,可以通过在线方式来实现晶片测试方法和晶片测试装置,而不将晶片分成每个芯片。