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1. 发明申请

US20090257275A1 Seasoning phase change memories 审中-公开
标题翻译：调味相变记忆
公开(公告)号：US20090257275A1
公开(公告)日：2009-10-15
申请号：US12082181
申请日：2008-04-09
申请人： Ilya V. Karpov , Semyon D. Savransky , Ward D. Parkinson
发明人： Ilya V. Karpov , Semyon D. Savransky , Ward D. Parkinson
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C13/0061 , G11C2013/009 , G11C2013/0092 , G11C2213/77
摘要： A seasoned phase change memory has been subjected to a longer pulse to adjust resistance levels prior to use of the phase change memory.
摘要翻译：在使用相变存储器之前，经验丰富的相变存储器已经经受更长的脉冲以调整电阻水平。

2. 发明授权

US07864567B2 Programming a normally single phase chalcogenide material for use as a memory of FPLA 有权
标题翻译：编程正常的单相硫族化物材料，用作FPLA的记忆
公开(公告)号：US07864567B2
公开(公告)日：2011-01-04
申请号：US12218122
申请日：2008-07-11
申请人： George A. Gordon , Ward D. Parkinson , John M. Peters , Tyler A. Lowrey , Stanford Ovshinsky , Guy C. Wicker , Ilya V. Karpov , Charles C. Kuo
发明人： George A. Gordon , Ward D. Parkinson , John M. Peters , Tyler A. Lowrey , Stanford Ovshinsky , Guy C. Wicker , Ilya V. Karpov , Charles C. Kuo
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2013/009 , G11C2013/0092 , G11C2213/77 , H01L27/2472 , H01L45/04 , H01L45/1233 , H01L45/141 , H01L45/144
摘要： A memory may be implemented with a stable chalcogenide glass which is defined as a generally amorphous chalcogenide material that does not change to a generally crystalline phase when exposed to 200° C. for 30 minutes or less. Different states may be programmed by changing the threshold voltage of the material. The threshold voltage may be changed with pulses of different amplitude and/or different pulse fall times. Reading may be done using a reference level between the threshold voltages of the two different states. A separate access device is generally not needed.
摘要翻译：可以用稳定的硫属化物玻璃来实现记忆，硫化物玻璃被定义为当暴露于200℃下30分钟或更短时不改变为通常结晶相的通常为非晶态的硫族化物材料。可以通过改变材料的阈值电压来编程不同的状态。可以用不同幅度和/或不同脉冲下降时间的脉冲来改变阈值电压。可以使用两种不同状态的阈值电压之间的参考电平进行读取。通常不需要单独的访问设备。

3. 发明授权

US08130536B2 Read window in chalcogenide semiconductor memories 有权
标题翻译：在硫族化物半导体存储器中阅读窗口
公开(公告)号：US08130536B2
公开(公告)日：2012-03-06
申请号：US11595055
申请日：2006-11-09
申请人： Ilya V. Karpov , Sergey Kostylev , George A. Gordon , Ward D. Parkinson
发明人： Ilya V. Karpov , Sergey Kostylev , George A. Gordon , Ward D. Parkinson
IPC分类号： G11C11/00
CPC分类号： G11C13/0061 , G11C13/0004 , G11C13/004 , G11C2013/0052
摘要： Using a shorter read pulse width may increase read window in some embodiments. This may allow the use of higher voltages with less likelihood of a read disturb where a bit unintentionally changes phase.
摘要翻译：在一些实施例中，使用更短的读取脉冲宽度可以增加读取窗口。这可能允许使用较高电压，其中一个位无意中改变相位的读取干扰的可能性较小。

4. 发明授权

US07414883B2 Programming a normally single phase chalcogenide material for use as a memory or FPLA 有权
标题翻译：编程正常的单相硫族化物材料，用作记忆体或FPLA
公开(公告)号：US07414883B2
公开(公告)日：2008-08-19
申请号：US11407573
申请日：2006-04-20
申请人： George A. Gordon , Ward D. Parkinson , John M. Peters , Tyler A. Lowrey , Stanford Ovshinsky , Guy C. Wicker , Ilya V. Karpov , Charles C. Kuo
发明人： George A. Gordon , Ward D. Parkinson , John M. Peters , Tyler A. Lowrey , Stanford Ovshinsky , Guy C. Wicker , Ilya V. Karpov , Charles C. Kuo
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2013/009 , G11C2013/0092 , G11C2213/77 , H01L27/2472 , H01L45/04 , H01L45/1233 , H01L45/141 , H01L45/144
摘要： A memory may be implemented with a stable chalcogenide glass which is defined as a generally amorphous chalcogenide material that does not change to a generally crystalline phase when exposed to 200° C. for 30 minutes or less. Different states may be programmed by changing the threshold voltage of the material. The threshold voltage may be changed with pulses of different amplitude and/or different pulse fall times. Reading may be done using a reference level between the threshold voltages of the two different states. A separate access device is generally not needed.
摘要翻译：可以用稳定的硫属化物玻璃来实现记忆，硫化物玻璃被定义为当暴露于200℃下30分钟或更短时不改变为通常结晶相的通常为非晶态的硫族化物材料。可以通过改变材料的阈值电压来编程不同的状态。可以用不同幅度和/或不同脉冲下降时间的脉冲来改变阈值电压。可以使用两种不同状态的阈值电压之间的参考电平进行读取。通常不需要单独的访问设备。

5. 发明申请

US20080273379A1 Programming a normally single phase chalcogenide material for use as a memory of FPLA 有权
标题翻译：编程正常的单相硫族化物材料，用作FPLA的记忆
公开(公告)号：US20080273379A1
公开(公告)日：2008-11-06
申请号：US12218122
申请日：2008-07-11
申请人： George A. Gordon , Ward D. Parkinson , John M. Peters , Tyler A. Lowrey , Stanford Ovshinsky , Guy C. Wicker , Ilya V. Karpov , Charles C. Kuo
发明人： George A. Gordon , Ward D. Parkinson , John M. Peters , Tyler A. Lowrey , Stanford Ovshinsky , Guy C. Wicker , Ilya V. Karpov , Charles C. Kuo
IPC分类号： G11C11/00 , H01L21/00
CPC分类号： G11C13/0004 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2013/009 , G11C2013/0092 , G11C2213/77 , H01L27/2472 , H01L45/04 , H01L45/1233 , H01L45/141 , H01L45/144
摘要： A memory may be implemented with a stable chalcogenide glass which is defined as a generally amorphous chalcogenide material that does not change to a generally crystalline phase when exposed to 200° C. for 30 minutes or less. Different states may be programmed by changing the threshold voltage of the material. The threshold voltage may be changed with pulses of different amplitude and/or different pulse fall times. Reading may be done using a reference level between the threshold voltages of the two different states. A separate access device is generally not needed.
摘要翻译：可以用稳定的硫属化物玻璃来实现记忆，硫化物玻璃被定义为当暴露于200℃下30分钟或更短时不改变为通常结晶相的通常为非晶态的硫族化物材料。可以通过改变材料的阈值电压来编程不同的状态。可以用不同幅度和/或不同脉冲下降时间的脉冲来改变阈值电压。可以使用两种不同状态的阈值电压之间的参考电平进行读取。通常不需要单独的访问设备。

6. 发明申请

US20080112217A1 Read window in chalcogenide semiconductor memories 有权
标题翻译：在硫族化物半导体存储器中阅读窗口
公开(公告)号：US20080112217A1
公开(公告)日：2008-05-15
申请号：US11595055
申请日：2006-11-09
申请人： Ilya V. Karpov , Sergey Kostylev , George A. Gordon , Ward D. Parkinson
发明人： Ilya V. Karpov , Sergey Kostylev , George A. Gordon , Ward D. Parkinson
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C13/0061 , G11C13/0004 , G11C13/004 , G11C2013/0052
摘要： Using a shorter read pulse width may increase read window in some embodiments. This may allow the use of higher voltages with less likelihood of a read disturb where a bit unintentionally changes phase.
摘要翻译：在一些实施例中，使用更短的读取脉冲宽度可以增加读取窗口。这可能允许使用较高电压，其中一个位无意中改变相位的读取干扰的可能性较小。

7. 发明申请

US20120287698A1 Using a Bit Specific Reference Level to Read a Memory 有权
标题翻译：使用位特定参考电平读取存储器
公开(公告)号：US20120287698A1
公开(公告)日：2012-11-15
申请号：US13555346
申请日：2012-07-23
申请人： Tyler Lowrey , Ward D. Parkinson , Ferdinando Bedeschi , Claudio Resta , Roberto Gastaldi , Giulio Casagrande
发明人： Tyler Lowrey , Ward D. Parkinson , Ferdinando Bedeschi , Claudio Resta , Roberto Gastaldi , Giulio Casagrande
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C7/14 , G11C11/5678 , G11C13/0004 , G11C13/004 , G11C2013/0054
摘要： A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells. The resulting read. window or margin may be improved in some embodiments.
摘要翻译：在读取电流改变之后，可以利用使用一个读取电流访问所选位的电压来读取未触发的相变存储器的选定位。因此，可以使用不同的参考电压来感测比较阻性的选择的单元更多的电阻的状态。结果阅读。在一些实施例中可以改善窗口或边缘。

8. 发明授权

US08036013B2 Using higher current to read a triggered phase change memory 有权
标题翻译：使用更高的电流来读取触发的相变存储器
公开(公告)号：US08036013B2
公开(公告)日：2011-10-11
申请号：US11093864
申请日：2005-03-30
申请人： Tyler Lowrey , Ward D. Parkinson , George A. Gordon
发明人： Tyler Lowrey , Ward D. Parkinson , George A. Gordon
IPC分类号： G11C11/00
CPC分类号： G11C27/024 , G11C13/0004 , G11C13/0033 , G11C13/004 , G11C13/0069 , G11C16/3431 , G11C2013/0054 , G11C2013/0057
摘要： A phase change memory cell may be read by driving a current through the cell higher than its threshold current. A voltage derived from the selected column may be utilized to read a selected bit of a phase change memory. The read window or margin may be improved in some embodiments. A refresh cycle may be included at periodic intervals.
摘要翻译：可以通过驱动通过电池的电流高于其阈值电流来读取相变存储器单元。从所选列导出的电压可用于读取相变存储器的选定位。在一些实施例中，可以改善读取窗口或边缘。可以以周期性间隔包括刷新周期。

9. 发明授权

US06990017B1 Accessing phase change memories 有权
标题翻译：访问相变存储器
公开(公告)号：US06990017B1
公开(公告)日：2006-01-24
申请号：US10882860
申请日：2004-06-30
申请人： Ward D. Parkinson , Charles H. Dennison , Stephen Hudgens
发明人： Ward D. Parkinson , Charles H. Dennison , Stephen Hudgens
IPC分类号： H01L21/336
CPC分类号： G11C13/003 , G11C13/0004 , G11C2213/74 , G11C2213/76
摘要： A memory may include a phase change memory element and series connected first and second selection devices. The second selection device may have a higher resistance and a larger threshold voltage than the first selection device. In one embodiment, the first selection device may have a threshold voltage substantially equal to its holding voltage. In some embodiments, the selection devices and the memory element may be made of chalcogenide. In some embodiments, the selection devices may be made of non-programmable chalcogenide. The selection device with the higher threshold voltage may contribute lower leakage to the combination, but may also exhibit increased snapback. This increased snapback may be counteracted by the selection device with the lower threshold voltage, resulting in a combination with low leakage and high performance in some embodiments.
摘要翻译：存储器可以包括相变存储器元件和串联连接的第一和第二选择器件。第二选择装置可以具有比第一选择装置更高的电阻和更大的阈值电压。在一个实施例中，第一选择装置可以具有基本上等于其保持电压的阈值电压。在一些实施例中，选择装置和存储元件可以由硫族化物制成。在一些实施例中，选择装置可以由不可编程的硫族化物制成。具有较高阈值电压的选择装置可能会对组合造成较低的泄漏，但也可能表现出增加的快速恢复。这种增加的快速恢复可以被具有较低阈值电压的选择装置抵消，导致在一些实施例中与低泄漏和高性能的组合。

10. 发明授权

US06813177B2 Method and system to store information 有权
标题翻译：方法和系统来存储信息
公开(公告)号：US06813177B2
公开(公告)日：2004-11-02
申请号：US10319756
申请日：2002-12-13
申请人： Tyler A. Lowrey , Ward D. Parkinson
发明人： Tyler A. Lowrey , Ward D. Parkinson
IPC分类号： G11C1100
CPC分类号： G11C13/0004 , G11C11/5642 , G11C11/5678 , G11C13/0064 , G11C13/0069 , G11C2013/0092
摘要： Briefly, in accordance with an embodiment of the invention, a method and system to program a memory material is provided. The method may include applying three signals having different durations and different amplitudes to a memory material to program the memory material to a predetermined state.
摘要翻译：简而言之，根据本发明的实施例，提供了一种用于对存储材料进行编程的方法和系统。该方法可以包括将具有不同持续时间和不同幅度的三个信号应用于存储器材料以将存储器材料编程到预定状态。

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