专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08642939B2 Semiconductor image sensor module, method for manufacturing the same as well as camera and method for manufacturing the same 有权
标题翻译：半导体图像传感器模块，其制造方法以及摄像机及其制造方法
公开(公告)号：US08642939B2
公开(公告)日：2014-02-04
申请号：US13442414
申请日：2012-04-09
申请人： Ikuo Yoshihara , Masamitsu Yamanaka
发明人： Ikuo Yoshihara , Masamitsu Yamanaka
IPC分类号： H01L23/48
CPC分类号： H01L27/14634 , H01L27/14618 , H01L27/14632 , H01L27/1464 , H01L31/0203 , H01L31/024 , H01L2924/0002 , H04N5/2257 , H01L2924/00
摘要： A semiconductor image sensor module 1 at least includes a semiconductor image sensor chip 2 having a transistor forming region on a first main surface of a semiconductor substrate and having a photoelectric conversion region with a light incident surface formed on a second main surface on the side opposite to the first main surface and an image signal processing chip 3 for processing image signals formed in the semiconductor image sensor chip 2, wherein a plurality of bump electrodes 15a are formed on a first main surface, a plurality of bump electrodes 15b are formed on the image signal processing chip 3, both the chips 2 and 3 are formed to be laminated through heat dissipating means 4 and the plurality of bump electrodes 15a of the semiconductor image sensor chip 2 and the plurality of bump electrodes 15b on the image signal processing chip 3 are electrically connected.
摘要翻译：半导体图像传感器模块1至少包括半导体图像传感器芯片2，半导体图像传感器芯片2在半导体基板的第一主表面上具有晶体管形成区域，并且具有光反射区域，光电转换区域形成在相对侧的第二主表面上的第二主表面上到第一主表面上的图像信号处理芯片3和用于处理形成在半导体图像传感器芯片2中的图像信号的图像信号处理芯片3，其中在第一主表面上形成有多个凸块电极15a，图像信号处理芯片3，芯片2和3都通过散热装置4和半导体图像传感器芯片2的多个凸块电极15a和图像信号处理芯片3上的多个凸起电极15b 电连接。

2. 发明授权

US07319217B2 Semiconductor image sensor module, method for manufacturing the same as well as camera and method for manufacturing the same 有权
标题翻译：半导体图像传感器模块，其制造方法以及摄像机及其制造方法
公开(公告)号：US07319217B2
公开(公告)日：2008-01-15
申请号：US11253255
申请日：2005-10-18
申请人： Ikuo Yoshihara , Masamitsu Yamanaka
发明人： Ikuo Yoshihara , Masamitsu Yamanaka
IPC分类号： H01L23/48
CPC分类号： H01L27/14634 , H01L27/14618 , H01L27/14632 , H01L27/1464 , H01L31/0203 , H01L31/024 , H01L2924/0002 , H04N5/2257 , H01L2924/00
摘要： A semiconductor image sensor module and a method for manufacturing thereof as well as a camera and a method for manufacturing thereof are provided in which a semiconductor image sensor chip and an image signal processing chip are connected with a minimum parasitic resistance and parasitic capacity and efficient heat dissipation of the image signal processing chip and shielding of light are simultaneously obtained.A semiconductor image sensor module 1 at least includes a semiconductor image sensor chip 2 having a transistor forming region on a first main surface of a semiconductor substrate and having a photoelectric conversion region with a light incident surface formed on a second main surface on the side opposite to the first main surface and an image signal processing chip 3 for processing image signals formed in the semiconductor image sensor chip 2, wherein a plurality of bump electrodes 15a are formed on a first main surface, a plurality of bump electrodes 15b are formed on the image signal processing chip 3, both the chips 2 and 3 are formed to be laminated through heat dissipating means 4 and the plurality of bump electrodes 15a of the semiconductor image sensor chip 2 and the plurality of bump electrodes 15b on the image signal processing chip 3 are electrically connected.
摘要翻译：提供一种半导体图像传感器模块及其制造方法以及相机及其制造方法，其中半导体图像传感器芯片和图像信号处理芯片以最小的寄生电阻和寄生电容和有效的热量连接同时获得图像信号处理芯片的耗散和光的屏蔽。半导体图像传感器模块1至少包括半导体图像传感器芯片2，半导体图像传感器芯片2在半导体基板的第一主表面上具有晶体管形成区域，并且具有光反射区域，光电转换区域形成在相对侧的第二主表面上的第二主表面上到第一主表面和图像信号处理芯片3，用于处理形成在半导体图像传感器芯片2中的图像信号，其中在第一主表面上形成有多个凸块电极15a，形成多个凸块电极15b 在图像信号处理芯片3上，芯片2和3都通过散热装置4和半导体图像传感器芯片2的多个凸起电极15a和图像上的多个凸起电极15b层叠而形成信号处理芯片3电连接。

3. 发明申请

US20060091290A1 Semiconductor image sensor module, method for manufacturing the same as well as camera and method for manufacturing the same 有权
标题翻译：半导体图像传感器模块，其制造方法以及摄像机及其制造方法
公开(公告)号：US20060091290A1
公开(公告)日：2006-05-04
申请号：US11253255
申请日：2005-10-18
申请人： Ikuo Yoshihara , Masamitsu Yamanaka
发明人： Ikuo Yoshihara , Masamitsu Yamanaka
IPC分类号： H01L27/00 , H01L31/00
CPC分类号： H01L27/14634 , H01L27/14618 , H01L27/14632 , H01L27/1464 , H01L31/0203 , H01L31/024 , H01L2924/0002 , H04N5/2257 , H01L2924/00
摘要： A semiconductor image sensor module and a method for manufacturing thereof as well as a camera and a method for manufacturing thereof are provided in which a semiconductor image sensor chip and an image signal processing chip are connected with a minimum parasitic resistance and parasitic capacity and efficient heat dissipation of the image signal processing chip and shielding of light are simultaneously obtained. A semiconductor image sensor module 1 at least includes a semiconductor image sensor chip 2 having a transistor forming region on a first main surface of a semiconductor substrate and having a photoelectric conversion region with a light incident surface formed on a second main surface on the side opposite to the first main surface and an image signal processing chip 3 for processing image signals formed in the semiconductor image sensor chip 2, wherein a plurality of bump electrodes 15a are formed on a first main surface, a plurality of bump electrodes 15b are formed on the image signal processing chip 3, both the chips 2 and 3 are formed to be laminated through heat dissipating means 4 and the plurality of bump electrodes 15a of the semiconductor image sensor chip 2 and the plurality of bump electrodes 15b on the image signal processing chip 3 are electrically connected.
摘要翻译：提供一种半导体图像传感器模块及其制造方法以及相机及其制造方法，其中半导体图像传感器芯片和图像信号处理芯片以最小的寄生电阻和寄生电容和有效的热量连接同时获得图像信号处理芯片的耗散和光的屏蔽。半导体图像传感器模块1至少包括半导体图像传感器芯片2，半导体图像传感器芯片2在半导体基板的第一主表面上具有晶体管形成区域，并且具有光反射区域，光电转换区域形成在相对侧的第二主表面上的第二主表面上到第一主表面和图像信号处理芯片3，用于处理形成在半导体图像传感器芯片2中的图像信号，其中在第一主表面上形成有多个凸块电极15a，形成多个凸块电极15b 在图像信号处理芯片3上，芯片2和3都通过散热装置4和半导体图像传感器芯片2的多个凸起电极15a和图像上的多个凸起电极15b层叠而形成信号处理芯片3电连接。

4. 发明授权

US08168932B2 Semiconductor image sensor module, method for manufacturing the same as well as camera and method for manufacturing the same 有权
标题翻译：半导体图像传感器模块，其制造方法以及摄像机及其制造方法
公开(公告)号：US08168932B2
公开(公告)日：2012-05-01
申请号：US12627970
申请日：2009-11-30
申请人： Ikuo Yoshihara , Masamitsu Yamanaka
发明人： Ikuo Yoshihara , Masamitsu Yamanaka
IPC分类号： H04N5/335 , H01L31/0224
CPC分类号： H01L27/14634 , H01L27/14618 , H01L27/14632 , H01L27/1464 , H01L31/0203 , H01L31/024 , H01L2924/0002 , H04N5/2257 , H01L2924/00
摘要： A semiconductor image sensor module and a method for manufacturing thereof as well as a camera and a method for manufacturing thereof are provided in which a semiconductor image sensor chip and an image signal processing chip are connected with a minimum parasitic resistance and parasitic capacity and efficient heat dissipation of the image signal processing chip and shielding of light are simultaneously obtained. A semiconductor image sensor module 1 at least includes a semiconductor image sensor chip 2 having a transistor forming region on a first main surface of a semiconductor substrate and having a photoelectric conversion region with a light incident surface formed on a second main surface on the side opposite to the first main surface and an image signal processing chip 3 for processing image signals formed in the semiconductor image sensor chip 2, wherein a plurality of bump electrodes 15a are formed on a first main surface, a plurality of bump electrodes 15b are formed on the image signal processing chip 3, both the chips 2 and 3 are formed to be laminated through heat dissipating means 4 and the plurality of bump electrodes 15a of the semiconductor image sensor chip 2 and the plurality of bump electrodes 15b on the image signal processing chip 3 are electrically connected.
摘要翻译：提供一种半导体图像传感器模块及其制造方法以及相机及其制造方法，其中半导体图像传感器芯片和图像信号处理芯片以最小的寄生电阻和寄生电容和有效的热量连接同时获得图像信号处理芯片的耗散和光的屏蔽。半导体图像传感器模块1至少包括半导体图像传感器芯片2，半导体图像传感器芯片2在半导体基板的第一主表面上具有晶体管形成区域，并且具有光反射区域，光电转换区域形成在相对侧的第二主表面上的第二主表面上到第一主表面上的图像信号处理芯片3和用于处理形成在半导体图像传感器芯片2中的图像信号的图像信号处理芯片3，其中在第一主表面上形成有多个凸块电极15a，图像信号处理芯片3，芯片2和3都通过散热装置4和半导体图像传感器芯片2的多个凸块电极15a和图像信号处理芯片3上的多个凸起电极15b 电连接。

5. 发明授权

US07626155B2 Semiconductor image sensor module, method for manufacturing the same as well as camera and method for manufacturing the same 有权
标题翻译：半导体图像传感器模块，其制造方法以及摄像机及其制造方法
公开(公告)号：US07626155B2
公开(公告)日：2009-12-01
申请号：US11810438
申请日：2007-06-05
申请人： Ikuo Yoshihara , Masamitsu Yamanaka
发明人： Ikuo Yoshihara , Masamitsu Yamanaka
IPC分类号： H01L23/48
CPC分类号： H01L27/14634 , H01L27/14618 , H01L27/14632 , H01L27/1464 , H01L31/0203 , H01L31/024 , H01L2924/0002 , H04N5/2257 , H01L2924/00
摘要： A semiconductor image sensor module and a method for manufacturing thereof as well as a camera and a method for manufacturing thereof are provided in which a semiconductor image sensor chip and an image signal processing chip are connected with a minimum parasitic resistance and parasitic capacity and efficient heat dissipation of the image signal processing chip and shielding of light are simultaneously obtained.A semiconductor image sensor module 1 at least includes a semiconductor image sensor chip 2 having a transistor forming region on a first main surface of a semiconductor substrate and having a photoelectric conversion region with a light incident surface formed on a second main surface on the side opposite to the first main surface and an image signal processing chip 3 for processing image signals formed in the semiconductor image sensor chip 2, wherein a plurality of bump electrodes 15a are formed on a first main surface, a plurality of bump electrodes 15b are formed on the image signal processing chip 3, both the chips 2 and 3 are formed to be laminated through heat dissipating means 4 and the plurality of bump electrodes 15a of the semiconductor image sensor chip 2 and the plurality of bump electrodes 15b on the image signal processing chip 3 are electrically connected.
摘要翻译：提供一种半导体图像传感器模块及其制造方法以及相机及其制造方法，其中半导体图像传感器芯片和图像信号处理芯片以最小的寄生电阻和寄生电容和有效的热量连接同时获得图像信号处理芯片的耗散和光的屏蔽。半导体图像传感器模块1至少包括半导体图像传感器芯片2，半导体图像传感器芯片2在半导体基板的第一主表面上具有晶体管形成区域，并且具有光反射区域，光电转换区域形成在相对侧的第二主表面上的第二主表面上到第一主表面上的图像信号处理芯片3和用于处理形成在半导体图像传感器芯片2中的图像信号的图像信号处理芯片3，其中在第一主表面上形成有多个凸块电极15a，图像信号处理芯片3，芯片2和3都通过散热装置4和半导体图像传感器芯片2的多个凸块电极15a和图像信号处理芯片3上的多个凸起电极15b 电连接。

6. 发明申请

US20070235828A1 Semiconductor image sensor module, method for manufacturing the same as well as camera and method for manufacturing the same 有权
标题翻译：半导体图像传感器模块，其制造方法以及摄像机及其制造方法
公开(公告)号：US20070235828A1
公开(公告)日：2007-10-11
申请号：US11810438
申请日：2007-06-05
申请人： Ikuo Yoshihara , Masamitsu Yamanaka
发明人： Ikuo Yoshihara , Masamitsu Yamanaka
IPC分类号： H01L31/0203 , H01L31/18
CPC分类号： H01L27/14634 , H01L27/14618 , H01L27/14632 , H01L27/1464 , H01L31/0203 , H01L31/024 , H01L2924/0002 , H04N5/2257 , H01L2924/00
摘要： A semiconductor image sensor module and a method for manufacturing thereof as well as a camera and a method for manufacturing thereof are provided in which a semiconductor image sensor chip and an image signal processing chip are connected with a minimum parasitic resistance and parasitic capacity and efficient heat dissipation of the image signal processing chip and shielding of light are simultaneously obtained. A semiconductor image sensor module 1 at least includes a semiconductor image sensor chip 2 having a transistor forming region on a first main surface of a semiconductor substrate and having a photoelectric conversion region with a light incident surface formed on a second main surface on the side opposite to the first main surface and an image signal processing chip 3 for processing image signals formed in the semiconductor image sensor chip 2, wherein a plurality of bump electrodes 15a are formed on a first main surface, a plurality of bump electrodes 15b are formed on the image signal processing chip 3, both the chips 2 and 3 are formed to be laminated through heat dissipating means 4 and the plurality of bump electrodes 15a of the semiconductor image sensor chip 2 and the plurality of bump electrodes 15b on the image signal processing chip 3 are electrically connected.
摘要翻译：提供一种半导体图像传感器模块及其制造方法以及相机及其制造方法，其中半导体图像传感器芯片和图像信号处理芯片以最小的寄生电阻和寄生电容和有效的热量连接同时获得图像信号处理芯片的耗散和光的屏蔽。半导体图像传感器模块1至少包括半导体图像传感器芯片2，半导体图像传感器芯片2在半导体基板的第一主表面上具有晶体管形成区域，并且具有光反射区域，光电转换区域形成在相对侧的第二主表面上的第二主表面上到第一主表面和图像信号处理芯片3，用于处理形成在半导体图像传感器芯片2中的图像信号，其中在第一主表面上形成有多个凸块电极15a，形成多个凸块电极15b 在图像信号处理芯片3上，芯片2和3都通过散热装置4和半导体图像传感器芯片2的多个凸起电极15a和图像上的多个凸起电极15b层叠而形成信号处理芯片3电连接。

7. 发明申请

US20120261554A1 SEMICONDUCTOR IMAGE SENSOR MODULE, METHOD FOR MANUFACTURING THE SAME AS WELL AS CAMERA AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体图像传感器模块，用于制造相机的方法以及用于制造相机的方法
公开(公告)号：US20120261554A1
公开(公告)日：2012-10-18
申请号：US13442414
申请日：2012-04-09
申请人： Ikuo Yoshihara , Masamitsu Yamanaka
发明人： Ikuo Yoshihara , Masamitsu Yamanaka
IPC分类号： H01L27/00
CPC分类号： H01L27/14634 , H01L27/14618 , H01L27/14632 , H01L27/1464 , H01L31/0203 , H01L31/024 , H01L2924/0002 , H04N5/2257 , H01L2924/00
摘要： A semiconductor image sensor module 1 at least includes a semiconductor image sensor chip 2 having a transistor forming region on a first main surface of a semiconductor substrate and having a photoelectric conversion region with a light incident surface formed on a second main surface on the side opposite to the first main surface and an image signal processing chip 3 for processing image signals formed in the semiconductor image sensor chip 2, wherein a plurality of bump electrodes 15a are formed on a first main surface, a plurality of bump electrodes 15b are formed on the image signal processing chip 3, both the chips 2 and 3 are formed to be laminated through heat dissipating means 4 and the plurality of bump electrodes 15a of the semiconductor image sensor chip 2 and the plurality of bump electrodes 15b on the image signal processing chip 3 are electrically connected.
摘要翻译：半导体图像传感器模块1至少包括半导体图像传感器芯片2，半导体图像传感器芯片2在半导体基板的第一主表面上具有晶体管形成区域，并且具有光反射区域，光电转换区域形成在相对侧的第二主表面上的第二主表面上到第一主表面上的图像信号处理芯片3和用于处理形成在半导体图像传感器芯片2中的图像信号的图像信号处理芯片3，其中在第一主表面上形成有多个凸块电极15a，图像信号处理芯片3，芯片2和3都通过散热装置4和半导体图像传感器芯片2的多个凸块电极15a和图像信号处理芯片3上的多个凸起电极15b 电连接。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式