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1. 发明授权

US07589399B2 Semiconductor device, lead frame used in the semiconductor device and electronic equipment using the semiconductor device 失效
标题翻译：半导体器件，半导体器件中使用的引线框和使用半导体器件的电子设备
公开(公告)号：US07589399B2
公开(公告)日：2009-09-15
申请号：US11507004
申请日：2006-08-21
申请人： Ikuo Kohashi
发明人： Ikuo Kohashi
IPC分类号： H01L23/495
CPC分类号： H01L23/295 , H01L23/49541 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49171 , H01L2924/01055 , H01L2924/01078 , H01L2924/01079 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor chip 23 is mounted on an island section 22 in a lead frame composed of a lead having the island section 22, a ground-bonding lead section 28 and a lead 21a each continuing in sequence, and other lead terminal sections 21b to 21d, and then a grounding electrode 24a and other electrodes 24b to 24d for the semiconductor chip are respectively wire-bonded to the lead 21a and other lead terminals 21b to 21d by gold wires 25a to 25d before being embedded in a resin to form a package 27. The lead with the semiconductor chip 23 mounted thereon is structured so that the ground-bonding lead section 28 continuing to both the lead 21a and the island section 22 are absent on both the sides of the wire-bonding region 28a with respect to the island section 22 in the longitudinal section along the grounded gold wire 25a.
摘要翻译：半导体芯片23安装在引线框架上的岛状部分22上，引线框架由具有岛状部分22的引线构成，接地引线部分28和引线21a依次连续，其它引线端子部分21b至21d，然后将用于半导体芯片的接地电极24a和其他电极24b至24d在嵌入树脂中之前分别通过金线25a至25d引线接合到引线21a和其它引线端子21b至21d，以形成封装27。其上安装有半导体芯片23的引线被构造成使得在引线接合区域28a的相对于岛部分的两侧不存在连续引线21a和岛部22两者的接地引线部分28 22沿着接地的金线25a在纵向截面中。

2. 发明授权

US06972205B2 Semiconductor laser device, fabricating method thereof and optical pickup employing the semiconductor laser device 有权
标题翻译：半导体激光器件，其制造方法和采用半导体激光器件的光学拾取器
公开(公告)号：US06972205B2
公开(公告)日：2005-12-06
申请号：US10655044
申请日：2003-09-05
申请人： Ikuo Kohashi , Osamu Hamaoka , Takeshi Horiguchi
发明人： Ikuo Kohashi , Osamu Hamaoka , Takeshi Horiguchi
IPC分类号： G11B7/125 , G11B7/135 , G11B7/22 , H01S5/02 , H01S5/022 , H01S5/30 , H01L21/00
CPC分类号： H01S5/0226 , H01S5/005 , H01S5/02236 , H01S5/02268 , H01S2301/02
摘要： In a semiconductor laser device, a semiconductor laser chip is placed on a stem so that an end surface of the semiconductor laser chip, on which the main radiation side light emission point is located, protrudes from an edge of a header portion of the stem or from an edge of a header portion of a sub-mount provided on the stem so as to conceal no light emission points of the semiconductor. A conductive die bonding paste is used for the die bonding of the semiconductor laser chip. A chamfered portion or a rounded corner portion is formed at the edge of the header portion of the stem or the edge of the header portion of the sub-mount provided on the stem. Also, an optical pickup is constructed of at least the semiconductor laser device, a diffraction grating, a photodetector, a condenser lens and an object lens.
摘要翻译：在半导体激光器件中，将半导体激光器芯片放置在杆上，使得主辐射侧发光点所在的半导体激光器芯片的端面从杆的头部的边缘突出，或从设置在杆上的副安装座的集管部分的边缘开始，以便不隐藏半导体的发光点。导电芯片粘接膏用于半导体激光芯片的裸片接合。在杆的集管部分的边缘或设置在杆上的副安装座的集管部分的边缘处形成倒角部分或圆角部分。此外，光学拾取器至少由半导体激光器件，衍射光栅，光电检测器，聚光透镜和物镜构成。

3. 发明授权

US06456635B1 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US06456635B1
公开(公告)日：2002-09-24
申请号：US09508630
申请日：2000-03-14
申请人： Takehiro Shiomoto , Ikuo Kohashi
发明人： Takehiro Shiomoto , Ikuo Kohashi
IPC分类号： H01S5024
CPC分类号： G11B7/127 , G11B2007/0006 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01S5/02 , H01S5/4025 , H01S5/4087 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor laser device (100) comprises a first semiconductor laser element (31) and a second semiconductor laser element (32) of different wavelengths, which are mounted on a heat sink block (2) directly or through a sub-mount provided on the heat sink block. The optical axes (A, B) of the semiconductor laser elements are substantially parallel to each other. The first and second semiconductor laser elements (31, 32) are mounted on the heat sink block (2) in such a manner that a relationship of 0≦L≦d1+d2≦160 &mgr;m is satisfied, where d1 is a distance between the optical axis (A) of the first semiconductor laser element (31) and the center axis (O) of a condenser lens (71) arranged in front of the semiconductor laser device (i.e., faced to the emission surfaces of the semiconductor laser elements), d2 is a distance between the optical axis (B) of the second semiconductor laser element (32) and the center axis of the condenser lens, and L is a distance between the optical axes of the first and second semiconductor laser elements.
摘要翻译：半导体激光器件（100）包括不同波长的第一半导体激光器元件（31）和第二半导体激光器元件（32），其直接或通过设置在散热块（2）上的子安装座散热块半导体激光元件的光轴（A，B）基本上彼此平行。第一和第二半导体激光元件（31,32）以满足0 <= L <= d1 + d2 <=160μm的关系的方式安装在散热块（2）上，其中d1是第一半导体激光元件（31）的光轴（A）与布置在半导体激光器件前方的聚光透镜（71）的中心轴（O）之间的距离（即，面向半导体激光器的发射表面激光元件），d2是第二半导体激光元件（32）的光轴（B）与聚光透镜的中心轴之间的距离，L是第一和第二半导体激光元件的光轴之间的距离。

4. 发明授权

US06888865B2 Semiconductor laser apparatus and method of producing the same 失效
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US06888865B2
公开(公告)日：2005-05-03
申请号：US09777922
申请日：2001-02-07
申请人： Ikuo Kohashi
发明人： Ikuo Kohashi
IPC分类号： H01L21/52 , H01S5/02 , H01S5/022 , H01S5/00 , H01S3/08 , H01S3/091
CPC分类号： H01S5/0226 , H01L2224/83192 , H01S5/02236
摘要： In a method of producing a semiconductor laser apparatus, a conductive die-bonding paste is applied to a bonding surface in a predetermined position thereof and then preheated at a temperature equal to or higher than a temperature at which a diluent of the conductive die-bonding paste starts to transpire, but lower than a temperature at which the conductive die-bonding paste starts a thermosetting reaction. Then, with a semiconductor laser chip placed on the preheated conductive die-bonding paste, the latter is heated to be hardened. In the thus produced semiconductor laser apparatus, a highest position at which the conductive die-bonding paste adheres to end surfaces of the semiconductor laser chip is at a height of more than 0.01 mm from the bonding surface, but is below light-emitting points of the semiconductor laser chip.
摘要翻译：在制造半导体激光装置的方法中，将导电性芯片接合膏施加到其规定位置的接合面上，然后在等于或高于导电性芯片接合用稀释剂的温度的温度下进行预热糊剂开始发生，但低于导电性模片粘合剂开始热固化反应的温度。然后，将半导体激光芯片放置在预热的导电芯片粘合膏上，将其加热硬化。在如此制造的半导体激光装置中，导电性芯片接合糊粘附于半导体激光芯片的端面的最高位置距离接合面大于0.01mm的高度，但低于半导体激光芯片。

5. 发明授权

US06700911B2 Semiconductor laser device, fabricating method thereof and optical pickup employing the semiconductor laser device 有权
标题翻译：半导体激光器件，其制造方法和采用半导体激光器件的光学拾取器
公开(公告)号：US06700911B2
公开(公告)日：2004-03-02
申请号：US09725513
申请日：2000-11-30
申请人： Ikuo Kohashi , Osamu Hamaoka , Takeshi Horiguchi
发明人： Ikuo Kohashi , Osamu Hamaoka , Takeshi Horiguchi
IPC分类号： H01S500
CPC分类号： H01S5/0226 , H01S5/005 , H01S5/02236 , H01S5/02268 , H01S2301/02
摘要： In a semiconductor laser device, a semiconductor laser chip is placed on a stem so that an end surface of the semiconductor laser chip, on which the main radiation side light emission point is located, protrudes from an edge of a header portion of the stem or from an edge of a header portion of a sub-mount provided on the stem so as to conceal no light emission points of the semiconductor. A conductive die bonding paste is used for the die bonding of the semiconductor laser chip. A chamfered portion or a rounded corner portion is formed at the edge of the header portion of the stem or the edge of the header portion of the sub-mount provided on the stem. Also, an optical pickup is constructed of at least the semiconductor laser device, a diffraction grating, a photodetector, a condenser lens and an object lens.
摘要翻译：在半导体激光器件中，将半导体激光器芯片放置在杆上，使得主辐射侧发光点所在的半导体激光器芯片的端面从杆的头部的边缘突出，或从设置在杆上的副安装座的集管部分的边缘开始，以便不隐藏半导体的发光点。导电芯片粘接膏用于半导体激光芯片的裸片接合。在杆的集管部分的边缘或设置在杆上的副安装座的集管部分的边缘处形成倒角部分或圆角部分。此外，光学拾取器至少由半导体激光器件，衍射光栅，光电检测器，聚光透镜和物镜构成。

6. 发明申请

US20070052073A1 Semiconductor device, lead frame used in the semiconductor device and electronic equipment using the semiconductor device 失效
标题翻译：半导体器件，半导体器件中使用的引线框和使用半导体器件的电子设备
公开(公告)号：US20070052073A1
公开(公告)日：2007-03-08
申请号：US11507004
申请日：2006-08-21
申请人： Ikuo Kohashi
发明人： Ikuo Kohashi
IPC分类号： H01L23/495 , H01L21/00
CPC分类号： H01L23/295 , H01L23/49541 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49171 , H01L2924/01055 , H01L2924/01078 , H01L2924/01079 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor chip 23 is mounted on an island section 22 in a lead frame composed of a lead having the island section 22, a ground-bonding lead section 28 and a lead 21a each continuing in sequence, and other lead terminal sections 21b to 21d, and then a grounding electrode 24a and other electrodes 24b to 24d for the semiconductor chip are respectively wire-bonded to the lead 21a and other lead terminals 21b to 21d by gold wires 25a to 25d before being embedded in a resin to form a package 27. The lead with the semiconductor chip 23 mounted thereon is structured so that the ground-bonding lead section 28 continuing to both the lead 21a and the island section 22 are absent on both the sides of the wire-bonding region 28a with respect to the island section 22 in the longitudinal section along the grounded gold wire 25a.
摘要翻译：半导体芯片23安装在引线框架上的岛状部分22上，引线框架由具有岛状部分22的引线构成，接地引线部分28和引线21a依次连续，其它引线端子部分21b至然后，如图21d所示，然后将用于半导体芯片的接地电极24a和其他电极24b至24d分别通过金线25a至25d引线接合到引线21a和其他引线端子21b至21d，之前嵌入树脂中以形成包装27。在其上安装有半导体芯片23的引线被构造成使得在引线接合区域28a的两侧相对于引线接合区域28a不存在连续引线21a和岛部分22的接地引线部分28。岛部22沿着接地的金线25a的纵向截面。

7. 发明授权

US06677184B2 Semiconductor laser apparatus and method of producing the same 失效
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US06677184B2
公开(公告)日：2004-01-13
申请号：US10294554
申请日：2002-11-15
申请人： Ikuo Kohashi
发明人： Ikuo Kohashi
IPC分类号： H01L2144
CPC分类号： H01S5/0226 , H01L2224/83192 , H01S5/02236
摘要： In a method of producing a semiconductor laser apparatus, a conductive die-bonding paste is applied to a bonding surface in a predetermined position thereof and then preheated at a temperature equal to or higher than a temperature at which a diluent of the conductive die-bonding paste starts to transpire, but lower than a temperature at which the conductive die-bonding paste starts a thermosetting reaction. Then, with a semiconductor laser chip placed on the preheated conductive die-bonding paste, the latter is heated to be hardened. In the thus produced semiconductor laser apparatus, a highest position at which the conductive die-bonding paste adheres to end surfaces of the semiconductor laser chip is at a height of more than 0.01 mm from the bonding surface, but is below light-emitting points of the semiconductor laser chip.
摘要翻译：在制造半导体激光装置的方法中，将导电性芯片接合膏施加到其规定位置的接合面上，然后在等于或高于导电性芯片接合用稀释剂的温度的温度下进行预热糊剂开始发生，但低于导电性模片粘合剂开始热固化反应的温度。然后，将半导体激光芯片放置在预热的导电芯片粘合膏上，将其加热硬化。在如此制造的半导体激光装置中，导电性芯片接合糊粘附于半导体激光芯片的端面的最高位置距离接合面大于0.01mm的高度，但低于半导体激光芯片。

8. 发明授权

US4745294A Photocoupler with light emitting and receiving elements coupled through a soft resin 失效
标题翻译：光耦合器，其发光和接收元件通过软树脂耦合
公开(公告)号：US4745294A
公开(公告)日：1988-05-17
申请号：US839875
申请日：1986-03-14
申请人： Ikuo Kohashi , Hajime Kashida , Shin Satoh
发明人： Ikuo Kohashi , Hajime Kashida , Shin Satoh
IPC分类号： H01L31/12
CPC分类号： H01L31/12
摘要： A photocoupler comprises a light-emitting element and a light-receiving element which are optically coupled through a soft light-transmissive resin and covered by a light-blocking resin. The light-emitting element is covered by a light-transmissive protective hard resin and hence is protected against external pressure.
摘要翻译：光电耦合器包括发光元件和光接收元件，其通过柔性透光树脂光学耦合并被遮光树脂覆盖。发光元件被透光保护性硬树脂覆盖，因此被保护以防止外部压力。

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