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1. 发明授权

US07381632B2 Semiconductor thin film crystallization device and semiconductor thin film crystallization method 失效
公开(公告)号：US07381632B2
公开(公告)日：2008-06-03
申请号：US11190707
申请日：2005-07-26
申请人： Tetsuya Inui , Junichiro Nakayama , Yoshihiro Taniguchi , Masanori Seki , Hiroshi Tsunasawa , Ikumi Kashiwagi
发明人： Tetsuya Inui , Junichiro Nakayama , Yoshihiro Taniguchi , Masanori Seki , Hiroshi Tsunasawa , Ikumi Kashiwagi
IPC分类号： H01L21/36
CPC分类号： H01L21/0268 , B23K26/0604 , B23K26/0608 , B23K26/0622 , B23K26/0732 , B23K26/0738 , H01L21/02686 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L29/04 , H01L29/6675 , H01L29/78672 , H01L29/78696
摘要： A first laser beam is emitted from a first laser oscillator in a pulsed manner at a high repetition frequency, and converged onto a substrate by a first intermediate optical system 2 so as to form a slit-like first beam spot. A second laser beam is emitted from a second laser beam oscillator in a pulsed manner to rise precedent to and fall subsequent to the first laser beam, and converged onto the substrate by a second intermediate optical system so as to form a second beam spot similar in configuration to the first beam spot and to contain the first beam spot. Crystallization of a semiconductor thin film on the substrate is carried out while the substrate or the first, second beam spots are moved. Thereby, the whole semiconductor thin film is formed into a crystal surface that has grown in one direction and free from ridges. Thus, the semiconductor thin film has an extremely flat surface, extremely few defects, large crystal grains and high throughput.

2. 发明申请

US20080084901A1 Semiconductor thin film crystallization device and semiconductor thin film crystallization method 审中-公开
标题翻译：半导体薄膜结晶装置和半导体薄膜结晶方法
公开(公告)号：US20080084901A1
公开(公告)日：2008-04-10
申请号：US11982568
申请日：2007-11-02
申请人： Tetsuya Inui , Junichiro Nakayama , Yoshihiro Taniguchi , Masanori Seki , Hiroshi Tsunasawa , Ikumi Kashiwagi
发明人： Tetsuya Inui , Junichiro Nakayama , Yoshihiro Taniguchi , Masanori Seki , Hiroshi Tsunasawa , Ikumi Kashiwagi
IPC分类号： H01S3/10 , H01L31/0248
CPC分类号： H01L21/0268 , B23K26/0604 , B23K26/0608 , B23K26/0622 , B23K26/0732 , B23K26/0738 , H01L21/02686 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L29/04 , H01L29/6675 , H01L29/78672 , H01L29/78696
摘要： A first laser beam is emitted from a first laser oscillator in a pulsed manner at a high repetition frequency, and converged onto a substrate by a first intermediate optical system 2 so as to form a slit-like first beam spot. A second laser beam is emitted from a second laser beam oscillator in a pulsed manner to rise precedent to and fall subsequent to the first laser beam, and converged onto the substrate by a second intermediate optical system so as to form a second beam spot similar in configuration to the first beam spot and to contain the first beam spot. Crystallization of a semiconductor thin film on the substrate is carried out while the substrate or the first, second beam spots are moved. Thereby, the whole semiconductor thin film is formed into a crystal surface that has grown in one direction and free from ridges. Thus, the semiconductor thin film has an extremely flat surface, extremely few defects, large crystal grains and high throughput.
摘要翻译：第一激光束以高重复频率以脉冲方式从第一激光振荡器发射，并且通过第一中间光学系统2会聚到基板上，以形成狭缝状的第一光束点。第二激光束以脉冲方式从第二激光束振荡器发射，以在第一激光束之前先进并落下，并且通过第二中间光学系统会聚到衬底上，以形成与第二激光束相似的第二光束点配置到第一束斑并且包含第一束斑。在基板或第一，第二光束点移动的同时进行半导体薄膜在基板上的结晶。由此，整个半导体薄膜形成为在一个方向上生长并且没有脊的晶体表面。因此，半导体薄膜具有非常平坦的表面，极少的缺陷，大的晶粒和高的通量。

3. 发明申请

US20060019474A1 Semiconductor thin film crystallization device and semiconductor thin film crystallization method 失效
标题翻译：半导体薄膜结晶装置和半导体薄膜结晶方法
公开(公告)号：US20060019474A1
公开(公告)日：2006-01-26
申请号：US11190707
申请日：2005-07-26
申请人： Tetsuya Inui , Junichiro Nakayama , Yoshihiro Taniguchi , Masanori Seki , Hiroshi Tsunasawa , Ikumi Kashiwagi
发明人： Tetsuya Inui , Junichiro Nakayama , Yoshihiro Taniguchi , Masanori Seki , Hiroshi Tsunasawa , Ikumi Kashiwagi
IPC分类号： H01L21/84 , H01L21/324 , H01L21/20
CPC分类号： H01L21/0268 , B23K26/0604 , B23K26/0608 , B23K26/0622 , B23K26/0732 , B23K26/0738 , H01L21/02686 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L29/04 , H01L29/6675 , H01L29/78672 , H01L29/78696
摘要： A first laser beam is emitted from a first laser oscillator in a pulsed manner at a high repetition frequency, and converged onto a substrate by a first intermediate optical system 2 so as to form a slit-like first beam spot. A second laser beam is emitted from a second laser beam oscillator in a pulsed manner to rise precedent to and fall subsequent to the first laser beam, and converged onto the substrate by a second intermediate optical system so as to form a second beam spot similar in configuration to the first beam spot and to contain the first beam spot. Crystallization of a semiconductor thin film on the substrate is carried out while the substrate or the first, second beam spots are moved. Thereby, the whole semiconductor thin film is formed into a crystal surface that has grown in one direction and free from ridges. Thus, the semiconductor thin film has an extremely flat surface, extremely few defects, large crystal grains and high throughput.
摘要翻译：第一激光束以高重复频率以脉冲方式从第一激光振荡器发射，并且通过第一中间光学系统2会聚到基板上，以形成狭缝状的第一光束点。第二激光束以脉冲方式从第二激光束振荡器发射，以在第一激光束之前先进并落下，并且通过第二中间光学系统会聚到衬底上，以便形成与第配置到第一束斑并且包含第一束斑。在基板或第一，第二光束点移动的同时进行半导体薄膜在基板上的结晶。由此，整个半导体薄膜形成为在一个方向上生长并且没有脊的晶体表面。因此，半导体薄膜具有非常平坦的表面，极少的缺陷，大的晶粒和高的通量。

4. 发明申请

US20050211987A1 Semiconductor device, manufacturing method thereof and manufacturing apparatus therefor 审中-公开
标题翻译：半导体装置及其制造方法及其制造装置
公开(公告)号：US20050211987A1
公开(公告)日：2005-09-29
申请号：US11088216
申请日：2005-03-22
申请人： Ikumi Kashiwagi , Junichiro Nakayama
发明人： Ikumi Kashiwagi , Junichiro Nakayama
IPC分类号： C30B13/24 , C30B29/06 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/84 , H01L29/04
CPC分类号： H01L21/02675 , C30B13/24 , C30B29/06 , H01L21/2026 , H01L29/04 , H01L29/66772 , Y10T117/10
摘要： A semiconductor device having a semiconductor film formed on a substrate, characterized in that the semiconductor film has laterally grown crystal, and at an end portion of the laterally grown crystal, height of surface projection is lower than film thickness of said semiconductor film, is provided.
摘要翻译：一种半导体器件，其具有形成在基板上的半导体膜，其特征在于，所述半导体膜具有横向生长的晶体，并且在横向生长的晶体的端部，表面突出的高度低于所述半导体膜的膜厚度。

5. 发明申请

US20050287773A1 Laser beam projection mask, and laser beam machining method and laser beam machine using same 失效
标题翻译：激光束投影掩模，激光束加工方法和激光束机使用相同
公开(公告)号：US20050287773A1
公开(公告)日：2005-12-29
申请号：US11158528
申请日：2005-06-21
申请人： Junichiro Nakayama , Masanori Seki , Hiroshi Tsunasawa , Yoshihiro Taniguchi
发明人： Junichiro Nakayama , Masanori Seki , Hiroshi Tsunasawa , Yoshihiro Taniguchi
IPC分类号： B23K26/06 , B23K26/08 , C30B13/00 , C30B21/04 , H01L21/20 , H01L21/26
CPC分类号： H01L21/0268 , B23K26/066 , B23K26/083 , H01L21/2026
摘要： The laser beam projection mask 14 has three rectangular-shaped slits 25, 26, 27 as transmission areas. These three slits 25, 26, 27 are formed in sequence in X direction shown by an arrow X in FIG. 2C at specified intervals, and the width in the X direction decreases in the order of the slit 25, the slit 26 and the slit 27. More particularly, transmission coefficients of the transmission areas change in conformity with a temperature distribution curve V1 of a silicon film 4 shown in FIG. 2B.
摘要翻译：激光束投影掩模14具有作为透射区域的三个矩形狭缝25,26,27。这三个狭缝25,26,27在X方向依次形成，如图1中的箭头X所示。 2 C，X方向的宽度按照狭缝25，狭缝26和狭缝27的顺序减小。更具体地，透射区域的透射系数根据图1所示的硅膜4的温度分布曲线V 1而变化。 2 B.

6. 发明授权

US06744201B2 Plasma information display element and method for producing the same 失效
标题翻译：等离子体信息显示元件及其制造方法
公开(公告)号：US06744201B2
公开(公告)日：2004-06-01
申请号：US10255076
申请日：2002-09-26
申请人： Junichiro Nakayama , Masanobu Tanaka
发明人： Junichiro Nakayama , Masanobu Tanaka
IPC分类号： H01J1749
CPC分类号： H01J11/40 , H01J11/12
摘要： A plasma information display element of the present invention includes a first substrate; a second substrate opposing the first substrate; a plurality of barrier ribs provided between the first substrate and the second substrate; and a plurality of discharge channels defined by the first substrate, the second substrate and the barrier ribs. The plasma information display element further includes: an anode and a cathode provided on one side of the first substrate that is closer to the second substrate; and a protective layer provided so as to cover the anode and the cathode, wherein the protective layer is a layer that contains (220)-oriented MgO and (200)-oriented MgO.
摘要翻译：本发明的等离子体信息显示元件包括：第一基板; 与所述第一基板相对的第二基板; 设置在所述第一基板和所述第二基板之间的多个障壁; 以及由第一基板，第二基板和障壁限定的多个排出通道。等离子体信息显示元件还包括：阳极和阴极，设置在第一基板的靠近第二基板的一侧; 以及设置成覆盖阳极和阴极的保护层，其中保护层是包含（220）取向的MgO和（200）取向的MgO的层。

7. 发明授权

US5933411A Optical recording medium having a wobbling section for recording address information and methods of recording and reproduction using same 失效
标题翻译：具有用于记录地址信息的摆动部分和使用其的记录和再现方法的光学记录介质
公开(公告)号：US5933411A
公开(公告)日：1999-08-03
申请号：US890401
申请日：1997-07-09
申请人： Tetsuya Inui , Hideaki Sato , Junichiro Nakayama , Naoyasu Iketani , Michinobu Mieda , Yoshiteru Murakami , Junji Hirokane , Akira Takahashi
发明人： Tetsuya Inui , Hideaki Sato , Junichiro Nakayama , Naoyasu Iketani , Michinobu Mieda , Yoshiteru Murakami , Junji Hirokane , Akira Takahashi
IPC分类号： G11B7/005 , G11B7/007 , G11B7/09 , G11B7/24 , G11B7/26 , G11B11/105
CPC分类号： G11B7/005 , G11B7/00718 , G11B7/00745 , G11B7/0901 , G11B7/261 , G11B11/10578 , G11B11/10582 , G11B7/0938 , G11B7/24
摘要： An optical disk has address recording sections each of which has a wobbled part of one of side walls of a groove. Each address recording section is formed by providing convexes of a groove in an adjacent land so as to widen the groove. With the wobbles thus provided in a concavo-convex form, address information is recorded. Besides, the address recording sections thus provided in the grooves are linearly disposed in radial directions of the optical disk. By thus arranging the optical disk on whose grooves and/or lands information is recorded, mixing of wobble frequency components in reproduced information signals does not occur, the sector method is applicable to the optical disk, and information signals of high quality can be obtained.
摘要翻译：光盘具有地址记录部分，每个地址记录部分具有凹槽的一个侧壁的摆动部分。每个地址记录部分通过在相邻的凸台中提供凹槽的凸起来形成，以便加宽凹槽。由于以这样提供的摆动形式为凹凸形式，所以记录地址信息。此外，这样设置在凹槽中的地址记录部分在光盘的径向上线性地设置。通过这样布置记录有槽和/或焊盘信息的光盘，不会发生重放信息信号中的摆动频率分量的混合，扇区方法可应用于光盘，并且可以获得高质量的信息信号。

8. 发明授权

US5825723A Magneto-optical recording medium having a reproducing layer with different magnetization directions in different temperature ranges 失效
标题翻译：具有在不同温度范围内具有不同磁化方向的再现层的磁光记录介质
公开(公告)号：US5825723A
公开(公告)日：1998-10-20
申请号：US685534
申请日：1996-07-24
申请人： Junji Hirokane , Junichiro Nakayama , Akira Takahashi
发明人： Junji Hirokane , Junichiro Nakayama , Akira Takahashi
IPC分类号： G11B11/10 , G11B11/105 , G11B11/00
CPC分类号： G11B11/10586
摘要： A non-magnetic intermediate layer for intercepting magnetic exchange interaction is provided between a recording layer and a reproducing layer which are composed of a magnetic thin film with perpendicular magnetization. At this time, the reproducing layer is formed so that when an external magnetic field is applied thereto in reproducing information, its magnetization direction is arranged in the direction of the external magnetic field in a first temperature range, and when a light beam for reproduction is projected thereto and the reproducing layer is in a second temperature, the magnetization direction is arranged in the direction of a leakage magnetic flux generated from the recording layer, and is again arranged in the direction of the external magnetic field in a third temperature range. As a result, a rise and a fall of a reproducing signal detected from the reproducing layer can be made sharp, thereby achieving recording and reproducing at high density.
摘要翻译：在由具有垂直磁化的磁性薄膜组成的记录层和再现层之间提供用于截取磁交换相互作用的非磁性中间层。此时，再现层形成为当再现信息中施加外部磁场时，其磁化方向在第一温度范围内沿外部磁场的方向排列，并且当用于再现的光束为投影到其上并且再现层处于第二温度，磁化方向被布置在从记录层产生的泄漏磁通的方向上，并且在第三温度范围内再次设置在外部磁场的方向上。结果，可以使从再现层检测到的再现信号的上升和下降变得尖锐，从而实现高密度的记录和再现。

9. 发明授权

US5768218A Magneto-optical recording medium having a plurality of magnetic layers 失效
标题翻译：具有多个磁性层的磁光记录介质
公开(公告)号：US5768218A
公开(公告)日：1998-06-16
申请号：US803274
申请日：1997-02-20
申请人： Junichiro Nakayama , Yoshiteru Murakami , Junji Hirokane , Akira Takahashi
发明人： Junichiro Nakayama , Yoshiteru Murakami , Junji Hirokane , Akira Takahashi
IPC分类号： G11B11/10 , G11B11/105 , G11B11/00
CPC分类号： G11B11/10584 , G11B11/10586 , G11B11/10506 , G11B11/10515 , G11B11/10521
摘要： A magneto-optical recording medium has a transparent substrate, a first magnetic layer, first intermediate layer, a second magnetic layer, and a third magnetic layer provided in this order. The first magnetic layer has an in-plane magnetization at room temperature, while a transition from the in-plane magnetization to a perpendicular magnetization occurs to the first magnetic layer with a temperature rise. The first intermediate layer is made of a non-magnetic substance. The second magnetic layer is a film having a perpendicular magnetization. The third magnetic layer is a film having a perpendicular magnetization, has a coercive force smaller than that of the second magnetic layer at room temperature, and has a Curie temperature higher than that of the second magnetic layer. The light intensity modulation overwriting method is applicable to the magneto-optical recording medium thus arranged, superior reproduction signal characteristics can be obtained with respect to this magneto-optical recording medium, and reproduction can be carried out with respect to the recording medium even though it has recording bits whose each diameter is smaller than that of a light beam. Thus it is possible to provide the magneto-optical recording medium suitable for high density recording.
摘要翻译：磁光记录介质具有依次设置的透明基板，第一磁性层，第一中间层，第二磁性层和第三磁性层。第一磁性层在室温下具有平面内的磁化强度，而从第一磁性层的温度上升发生从面内磁化向垂直磁化的转变。第一中间层由非磁性物质制成。第二磁性层是具有垂直磁化强度的膜。第三磁性层是具有垂直磁化的膜，在室温下的矫顽力小于第二磁性层的矫顽力，并且居里温度高于第二磁性层的居里温度。光强度调制重写方法适用于如此布置的磁光记录介质，可以获得相对于该磁光记录介质的优良再现信号特性，并且可以相对于记录介质进行再现，即使它具有每个直径小于光束直径的记录位。因此，可以提供适合于高密度记录的磁光记录介质。

10. 发明授权

US5683803A Magneto-optical recording medium and method of recording and reproducing using the same 失效
标题翻译：磁光记录介质及使用其的记录和再现方法
公开(公告)号：US5683803A
公开(公告)日：1997-11-04
申请号：US433088
申请日：1995-05-03
申请人： Junichiro Nakayama , Michinobu Mieda , Junji Hirokane , Akira Takahashi , Kenji Ohta
发明人： Junichiro Nakayama , Michinobu Mieda , Junji Hirokane , Akira Takahashi , Kenji Ohta
IPC分类号： G11B11/10 , G11B11/105 , G11B5/66 , B32B5/16
CPC分类号： G11B11/10586 , G11B11/10506 , G11B11/10515 , G11B11/10523 , Y10S428/90 , Y10T428/26 , Y10T428/265
摘要： A magneto-optical recording medium includes a first magnetic layer and a second magnetic layer being laminated. When information is to be recorded on the first magnetic layer, first, a magnetization direction in the second magnetic layer is arranged in one direction with an application of an initialization magnetic field. Then, an intensity modulated light beam is projected while applying thereto a recording magnetic field so as to change the magnetization direction in the second magnetic layer. Thereafter, the magnetization direction in the second magnetic layer is copied to the first magnetic layer, thereby recording information. The first magnetic layer has a magnetization in an intermediate direction between a perpendicular direction and an in-plane direction at room temperature, while has a perpendicular magnetization at above a predetermined temperature. Therefore, a smaller exchange coupling force is exerted from the first magnetic layer to the second magnetic layer at room temperature, thereby enabling a rewriting information with a smaller initialization magnetic field compared with the conventional method, thereby achieving a reduction in size of the apparatus and power conservation.
摘要翻译：磁光记录介质包括层叠的第一磁性层和第二磁性层。当要在第一磁性层上记录信息时，首先，通过施加初始化磁场，将第二磁性层中的磁化方向布置在一个方向上。然后，施加强度调制光束，同时向其施加记录磁场，以改变第二磁性层中的磁化方向。此后，将第二磁性层中的磁化方向复制到第一磁性层，从而记录信息。第一磁性层在室温下具有在垂直方向和面内方向之间的中间方向上的磁化强度，同时具有高于预定温度的垂直磁化强度。因此，与常规方法相比，在室温下从第一磁性层向第二磁性层施加较小的交换耦合力，从而能够实现与常规方法相比具有较小初始化磁场的重写信息，从而实现装置的尺寸减小省电。

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