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1. 发明申请

US20120282483A1 Method for Strengthening Adhesion Between Dielectric Layers Formed Adjacent to Metal Layers 有权
标题翻译：加强与金属层相邻的介电层之间的粘附强化方法
公开(公告)号：US20120282483A1
公开(公告)日：2012-11-08
申请号：US13540036
申请日：2012-07-02
申请人： Igor C. Ivanov , Weiguo Zhang , Artur Kolics
发明人： Igor C. Ivanov , Weiguo Zhang , Artur Kolics
IPC分类号： C23C8/00 , B05D5/00 , B05D3/10 , B32B15/04
CPC分类号： H01L21/64 , C23C8/02 , C23C18/1605 , C23C18/1632 , C23C18/1683 , C23C18/1803 , C23C28/00 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/345 , C23C28/3455 , H01L21/288 , H01L21/321 , H01L21/76843 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76864 , H01L21/76874 , Y10T428/1241 , Y10T428/12493 , Y10T428/12549 , Y10T428/23 , Y10T428/24628
摘要： A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.
摘要翻译：提供了一种方法，其包括形成金属层并将金属层的至少一部分转化为水合金属氧化物层。提供了另一种方法，其包括在另一电介质层上选择性地沉积电介质层并且选择性地沉积与电介质层相邻的金属层。因此，形成微电子拓扑，其包括分别包括亲水和疏水材料的下层和上层的金属特征和相邻电介质部分。本文还提供了包括具有单层的金属特征的地形，其中至少四个元件衬在下表面和金属特征的侧壁。用于形成这种单层的流体可以通过配置成测量所有四个元素的浓度的测试设备进行分析。在一些情况下，可以基于分析来调整流体的组成。

2. 发明授权

US06881437B2 Methods and system for processing a microelectronic topography 失效
标题翻译：用于处理微电子拓扑的方法和系统
公开(公告)号：US06881437B2
公开(公告)日：2005-04-19
申请号：US10462167
申请日：2003-06-16
申请人： Igor C. Ivanov , Weiguo Zhang
发明人： Igor C. Ivanov , Weiguo Zhang
IPC分类号： H01L21/00 , H01L21/687 , B05D5/12 , B05D1/18 , B05D3/12
CPC分类号： H01L21/68728 , H01L21/67051 , H01L21/6708 , Y02P80/30
摘要： Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.
摘要翻译：提供了适于处理微电子拓扑的方法和系统，特别是与无电沉积工艺相关联。通常，方法可以包括将形貌加载到腔室中，关闭腔室以形成封闭区域，并将流体供应到封闭区域。在一些实施例中，流体可以填充封闭区域。另外或替代地，围绕地形可以形成第二封闭区域。因此，所提供的系统可以适于在基板保持器周围形成不同的封闭区域。在一些情况下，该方法可以包括搅拌溶液以在无电沉积工艺期间使气泡在晶片上的累积最小化。因此，本文提供的系统可以包括在一些实施例中用于搅拌溶液的装置。用于搅拌的这种手段可能不同于用于将溶液供应到室的入口。

3. 发明申请

US20120213914A1 Apparatus and Method for Electroless Deposition of Materials on Semiconductor Substrates 有权
标题翻译：半导体衬底上材料的无电沉积的装置和方法
公开(公告)号：US20120213914A1
公开(公告)日：2012-08-23
申请号：US13408039
申请日：2012-02-29
申请人： Igor C. Ivanov , Jonathan Weiguo Zhang , Artur Kolics
发明人： Igor C. Ivanov , Jonathan Weiguo Zhang , Artur Kolics
IPC分类号： B05D5/12
CPC分类号： C23C18/1676 , C23C18/1628 , C23C18/163 , C23C18/1632 , C23C18/168 , C23C18/1682 , H01L21/288
摘要： An apparatus is provided having a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus also includes a solution heater and a control system for controlling temperature and pressure in the chamber. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.
摘要翻译：提供一种装置，其具有能够被密封并且能够承受增加的压力和高温的可关闭室。该室具有用于供应各种处理液体的多个入口，例如沉积溶液，用于冲洗的水等，以及用于在压力下供应气体的端口。该装置还包括解决方案加热器和用于控制室内的温度和压力的控制系统。通过在压力下和稍低于溶液沸点的温度下进行沉积工艺来实现均匀沉积。该解决方案可以从上面通过形成在盖中的淋浴喷头或者通过室的底部供应。冲洗或其它辅助溶液经由可平行于其上的衬底上方的可径向移动的化学分配臂供应。

4. 发明授权

US08003159B2 Methods and systems for processing a microelectronic topography 有权
标题翻译：用于处理微电子拓扑的方法和系统
公开(公告)号：US08003159B2
公开(公告)日：2011-08-23
申请号：US11108589
申请日：2005-04-18
申请人： Igor C. Ivanov , Weiguo Zhang
发明人： Igor C. Ivanov , Weiguo Zhang
IPC分类号： B05D3/04
CPC分类号： H01L21/68728 , H01L21/67051 , H01L21/6708 , Y02P80/30
摘要： Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.
摘要翻译：提供了适于处理微电子拓扑的方法和系统，特别是与无电沉积工艺相关联。通常，方法可以包括将形貌加载到腔室中，关闭腔室以形成封闭区域，并将流体供应到封闭区域。在一些实施例中，流体可以填充封闭区域。另外或替代地，围绕地形可以形成第二封闭区域。因此，所提供的系统可以适于在基板保持器周围形成不同的封闭区域。在一些情况下，该方法可以包括搅拌溶液以在无电沉积工艺期间使气泡在晶片上的累积最小化。因此，本文提供的系统可以包括在一些实施例中用于搅拌溶液的装置。用于搅拌的这种手段可能不同于用于将溶液供应到室的入口。

5. 发明授权

US07883739B2 Method for strengthening adhesion between dielectric layers formed adjacent to metal layers 有权
标题翻译：用于加强与金属层相邻形成的介电层之间的附着力的方法
公开(公告)号：US07883739B2
公开(公告)日：2011-02-08
申请号：US10462343
申请日：2003-06-16
申请人： Igor C. Ivanov , Weiguo Zhang , Artur Kolics
发明人： Igor C. Ivanov , Weiguo Zhang , Artur Kolics
IPC分类号： B05D5/12 , H01L21/4763
CPC分类号： H01L21/64 , C23C8/02 , C23C18/1605 , C23C18/1632 , C23C18/1683 , C23C18/1803 , C23C28/00 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/345 , C23C28/3455 , H01L21/288 , H01L21/321 , H01L21/76843 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76864 , H01L21/76874 , Y10T428/1241 , Y10T428/12493 , Y10T428/12549 , Y10T428/23 , Y10T428/24628
摘要： A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.
摘要翻译：提供了一种方法，其包括形成金属层并将金属层的至少一部分转化为水合金属氧化物层。提供了另一种方法，其包括在另一电介质层上选择性地沉积电介质层，并且选择性地沉积与电介质层相邻的金属层。因此，形成微电子拓扑，其包括分别包括亲水和疏水材料的下层和上层的金属特征和相邻电介质部分。本文还提供了包括具有单层的金属特征的地形，其中至少四个元件衬在下表面和金属特征的侧壁。用于形成这种单层的流体可以通过配置成测量所有四个元素的浓度的测试设备进行分析。在一些情况下，可以基于分析来调整流体的组成。

6. 发明授权

US07651723B2 Microelectronic fabrication system components and method for processing a wafer using such components 有权
标题翻译：微电子制造系统部件和使用这些部件处理晶片的方法
公开(公告)号：US07651723B2
公开(公告)日：2010-01-26
申请号：US11034363
申请日：2005-01-10
申请人： Igor C. Ivanov , Weiguo Zhang
发明人： Igor C. Ivanov , Weiguo Zhang
IPC分类号： B05D7/00 , B05D1/26 , C23C18/54
CPC分类号： H01L21/76843 , C23C18/1619 , H01L21/288 , H01L21/6715 , H01L21/76802 , H01L21/76831 , H01L21/76834 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76862 , H01L21/76864 , H01L21/76874
摘要： A process chamber is provided which includes a gate configured to align barriers with an opening of the gate and an opening of the process chamber such that the two openings are either sealed or provide an air passage to the chamber. A method is provided and includes sealing an opening of a chamber with a gate latch and exposing a topography to a first set of process steps, opening the gate latch such that an air passage is provided to the process chamber, and exposing the topography to a second set of process steps without allowing liquids within the chamber to flow through the air passage. A substrate holder comprising a clamping jaw with a lever and a support member coupled to the lever is also contemplated herein. A process chamber with a reservoir arranged above a substrate holder is also provided herein.
摘要翻译：提供了一种处理室，其包括门，所述门被配置为使障碍物与门的开口和处理室的开口对齐，使得两个开口被密封或提供到腔室的空气通道。提供了一种方法，包括用门闩将密封一个开口的腔室，并将地形暴露于第一组工艺步骤，打开门闩，使得空气通道被提供到处理室，并将该地形暴露于第二组处理步骤，而不允许室内的液体流过空气通道。包括具有杠杆的夹爪和联接到杠杆的支撑构件的衬底保持器也在本文中考虑。本文还提供了一种具有布置在衬底保持器上方的储存器的处理室。

7. 发明授权

US06935638B2 Universal substrate holder for treating objects in fluids 有权
标题翻译：用于处理流体中的物体的通用基板支架
公开(公告)号：US06935638B2
公开(公告)日：2005-08-30
申请号：US10369878
申请日：2003-02-21
申请人： Igor C. Ivanov , Jonathan Weiguo Zhang
发明人： Igor C. Ivanov , Jonathan Weiguo Zhang
IPC分类号： B23B31/14 , B23B31/18 , H01L21/00 , H01L21/687 , B23B31/103
CPC分类号： H01L21/67126 , B23B31/14 , B23B31/18 , H01L21/68707 , H01L21/68728 , Y10T279/18 , Y10T279/24 , Y10T279/247
摘要： A universal substrate holder of the invention for treating wafer substrates in liquids is provided with a shaft and a rod slidingly inserted into the central opening of the shaft. The end of the shaft that protrudes into the bowl supports a base platform for the substrate, while the end of the rod that protrudes into the bowl has radial arms that rigidly support an annular plate with pins that can pass through the opening of the base platform so that they can support the substrate above the surface of the platform. The annular plate supports clamping jaws made in the form of two-arm levers with shorter arms and longer arms. The longer arms are heavier and therefore in the stationary state of the holder keep the jaws turned into an open position. When the shaft begins to rotate, the jaws are turned under the effect of centrifugal forces into positions of clamping the substrate with the shorter arms. When the rod is pulled down, the ends of the longer arms come into contact with the base platform and are turned into the clamping position. The substrate holder of the invention allows clamping and releasing of the substrate in positions of the substrate above the platform and in a position of the substrate on the base substrate, when the backside of the substrate is inaccessible to the process liquid.
摘要翻译：用于处理液体中的晶片基板的本发明的通用基板保持器设置有滑动地插入轴的中心开口中的轴和杆。突出到碗中的轴的端部支撑用于基底的基座，而突出到碗中的杆的端部具有径向臂，其刚性地支撑环形板，销可以穿过基座的开口使得它们可以支撑平台表面上方的基板。环形板支撑以双臂杠杆的形式制成的夹爪，其具有较短的臂和较长的臂。较长的手臂较重，因此在保持架的静止状态下，保持夹爪变为打开位置。当轴开始旋转时，夹爪在离心力的作用下转动到用较短的臂夹持基板的位置。当杆被拉下时，较长臂的端部与基座平台接触并转动到夹紧位置。本发明的衬底保持器允许当衬底的背面不可用于处理液体时，衬底在平台上方的位置和衬底在基底衬底上的位置的夹持和释放。

8. 发明授权

US06908512B2 Temperature-controlled substrate holder for processing in fluids 有权
标题翻译：用于在流体中加工的温度控制的基板支架
公开(公告)号：US06908512B2
公开(公告)日：2005-06-21
申请号：US10247895
申请日：2002-09-20
申请人： Igor C. Ivanov , Jonathan Weiguo Zhang , Artur Kolics
发明人： Igor C. Ivanov , Jonathan Weiguo Zhang , Artur Kolics
IPC分类号： B24B37/30 , B24B49/14 , C23C18/16 , H01L21/00 , H01L21/288 , H01L21/687 , G05C13/00
CPC分类号： C23C18/163 , B24B37/30 , B24B49/14 , C23C18/1678 , H01L21/288 , H01L21/2885 , H01L21/67248 , H01L21/68785
摘要： A substrate holder has a disk-like body with a central recess having diameter smaller than the diameter of the substrate placed onto the upper surface of the holder. The substrate can be clamped in place by the clamps of the edge-grip mechanism or placed into a seat without the use of clamps. In both cases, the substrate forms a partial wall that confines the heating/cooling recess or chamber. The aforementioned recess is filled with a cooling or heating liquid (depending on the mode of metal deposition) selectively supplied from a liquid heating or cooling system. In order to ensure in the working chamber above the substrate a pressure slightly higher than the pressure in the cooling/heating recess, the working chamber is first filled with the working solution under the atmospheric pressure, and then the recess is filled with a heating or cooling liquid with simultaneous increase of pressure in the working chamber to a level slightly exceeding the pressure in the recess. The substrate holder of the invention provides direct heat/cool-exchange between the heating/cooling medium and the substrate and allows instantaneous change of temperature of the heating/cooling liquid.
摘要翻译：衬底保持器具有盘状体，其具有直径小于放置在保持器的上表面上的衬底的直径的中心凹部。基板可以通过边缘抓握机构的夹具夹紧就位，或者不使用夹具而放置在座中。在这两种情况下，基板形成限制加热/冷却凹部或室的局部壁。上述凹部填充有从液体加热或冷却系统选择性地供应的冷却或加热液体（取决于金属沉积的模式）。为了确保在基板上方的工作室内的压力略高于冷却/加热凹槽中的压力，工作室首先在大气压力下被工作溶液填充，然后用加热或冷却液体，同时将工作室中的压力提高到稍微超过凹部中的压力的水平。本发明的衬底保持器在加热/冷却介质和衬底之间提供直接的热/冷交换，并且允许加热/冷却液体的温度的瞬时变化。

9. 发明授权

US08906446B2 Apparatus and method for electroless deposition of materials on semiconductor substrates 有权
标题翻译：在半导体衬底上无电沉积材料的装置和方法
公开(公告)号：US08906446B2
公开(公告)日：2014-12-09
申请号：US13408039
申请日：2012-02-29
申请人： Igor C. Ivanov , Jonathan Weiguo Zhang , Artur Kolics
发明人： Igor C. Ivanov , Jonathan Weiguo Zhang , Artur Kolics
IPC分类号： C23C18/16 , H01L21/288
CPC分类号： C23C18/1676 , C23C18/1628 , C23C18/163 , C23C18/1632 , C23C18/168 , C23C18/1682 , H01L21/288
摘要： An apparatus is provided having a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, DI water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus also includes a solution heater and a control system for controlling temperature and pressure in the chamber. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.
摘要翻译：提供一种装置，其具有能够被密封并且能够承受增加的压力和高温的可关闭室。该室具有用于供应各种处理液体的多个入口，例如沉积溶液，用于冲洗的去离子水等，以及用于在压力下供应气体的端口。该装置还包括解决方案加热器和用于控制室内的温度和压力的控制系统。通过在压力下和稍低于溶液沸点的温度下进行沉积工艺来实现均匀沉积。该解决方案可以从上面通过形成在盖中的淋浴喷头或者通过室的底部供应。冲洗或其它辅助溶液经由可平行于其上的衬底上方的可径向移动的化学分配臂供应。

10. 发明授权

US08586133B2 Method for strengthening adhesion between dielectric layers formed adjacent to metal layers 有权
标题翻译：用于加强与金属层相邻形成的介电层之间的附着力的方法
公开(公告)号：US08586133B2
公开(公告)日：2013-11-19
申请号：US13540036
申请日：2012-07-02
申请人： Igor C. Ivanov , Weiguo Zhang , Artur Kolics
发明人： Igor C. Ivanov , Weiguo Zhang , Artur Kolics
IPC分类号： C23C20/02 , C23C20/04 , H01L21/28 , H01L21/288
CPC分类号： H01L21/64 , C23C8/02 , C23C18/1605 , C23C18/1632 , C23C18/1683 , C23C18/1803 , C23C28/00 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/345 , C23C28/3455 , H01L21/288 , H01L21/321 , H01L21/76843 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76864 , H01L21/76874 , Y10T428/1241 , Y10T428/12493 , Y10T428/12549 , Y10T428/23 , Y10T428/24628
摘要： A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.
摘要翻译：提供了一种方法，其包括形成金属层并将金属层的至少一部分转化为水合金属氧化物层。提供了另一种方法，其包括在另一电介质层上选择性地沉积电介质层并且选择性地沉积与电介质层相邻的金属层。因此，形成微电子拓扑，其包括分别包括亲水和疏水材料的下层和上层的金属特征和相邻电介质部分。本文还提供了包括具有单层的金属特征的地形，其中至少四个元件衬在下表面和金属特征的侧壁。用于形成这种单层的流体可以通过配置成测量所有四个元素的浓度的测试设备进行分析。在一些情况下，可以基于分析来调整流体的组成。

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