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1. 发明专利

JP2006016285A Method of manufacturing fullerene with openings and method of manufacturing inclusion fullerene 审中-公开
标题翻译：制造富勒烯与开孔的方法及其制造方法
公开(公告)号：JP2006016285A
公开(公告)日：2006-01-19
申请号：JP2004198351
申请日：2004-07-05
申请人： Ideal Star Inc , 株式会社イデアルスター
发明人： KASAMA YASUHIKO , OMOTE KENJI , KUDO NOBORU
IPC分类号： C01B31/02
摘要： PROBLEM TO BE SOLVED: To solve a problem that an efficiency of an inclusion fullerene formation is low, when an inclusion fullerene including an atom with an ionic diameter larger than that of an average diameter of a six-membered ring of fullerene is formed by a plasma irradiation method where a plasma of an ionized inclusion atom and a fullerene vapor are irradiated on a deposition substrate in a vacuum chamber. SOLUTION: A fullerene with openings is formed by irradiating an alkali metal ion and a fullerene vapor on a deposition substrate to which a high biased voltage is applied, where a very small amount of water in a vacuum chamber reacts with fullerene by a catalysis of the alkali metal ion. Thus formed fullerene with openings is once recovered and an inclusion atom plasma and the vapor of the fullerene with openings are irradiated on the deposition substrate to form an inclusion fullerene. Since the inclusion of an atom through the openings is possible, the efficiency of the formation of an inclusion fullerene is improved even when a large atom is included. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题为了解决夹杂物富勒烯形成的效率低的问题，当包含离子直径大于富勒烯的六元环的平均直径的原子的包含富勒烯为通过等离子体照射方法形成，其中将离子化包合原子和富勒烯蒸气的等离子体照射在真空室中的沉积基板上。解决方案：具有开口的富勒烯通过在施加高偏压电压的沉积基板上照射碱金属离子和富勒烯蒸汽来形成，其中真空室中非常少量的水与富勒烯反应通过碱金属离子的催化。如此形成的具有开口的富勒烯被一次回收，并且包含原子等离子体和具有开口的富勒烯的蒸气被照射在沉积基板上以形成夹杂物富勒烯。由于通过开口包含原子是可能的，所以即使包含大的原子也能够提高夹杂物富勒烯的形成效率。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2005219970A Apparatus for manufacturing doped-fullerene, and method of manufacturing doped-fullerene 审中-公开
标题翻译：制造DOPED-FULLERENE的装置以及制造DOPED-FULLERENE的方法
公开(公告)号：JP2005219970A
公开(公告)日：2005-08-18
申请号：JP2004029680
申请日：2004-02-05
申请人： Ideal Star Inc , 株式会社イデアルスター
发明人： KASAMA YASUHIKO , OMOTE KENJI , KUDO NOBORU
IPC分类号： C01B31/02
摘要： PROBLEM TO BE SOLVED: To solve a problematic point such that a doped-fullerene becomes difficult to be produced because the plasma potential deviates from a voltage value optimum for encapsulation when the deposition film becomes thicker, in the manufacturing method of the doped-fullerene by which the doped-fullerene is formed by irradiating a substrate with a plasma comprising ions of an atom to be encapsulated and fullerene ions, although the plasma potential near a deposition substrate is controlled by impressing a certain bias voltage to the depositing substrate, and enlarging the interaction of the ions of the atom to be encapsulated and the fullerene ions to enhance the production efficiency.
SOLUTION: By measuring the plasma potential near the depositing substrate, the bias voltage to be impressed to the depositing substrate is feedback-controlled so that the plasma potential becomes always optimum. Thereby, even if the deposited film becomes thick, a large amount production of the doped-fullerene becomes possible, since the doped-fullerene is formed in a high yield.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题为了解决由于等离子体电位偏离当沉积膜变厚时用于封装的最佳电压值而难以产生掺杂富勒烯的问题点，在掺杂的富勒烯的制造方法中虽然通过向沉积衬底施加一定的偏置电压来控制沉积衬底附近的等离子体电位，但是通过用包含待封装的原子的离子和富勒烯离子的离子的等离子体照射基底来形成掺杂富勒烯的富勒烯，并且扩大待封装的原子的离子与富勒烯离子的相互作用，以提高生产效率。解决方案：通过测量沉积衬底附近的等离子体电位，施加给沉积衬底的偏置电压被反馈控制，使得等离子体电势始终是最佳的。因此，即使沉积膜变厚，由于掺杂富勒烯以高产率形成，所以可以大量产生掺杂富勒烯。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2006219364A Manufacturing unit for fullerene base material, and its manufacturing method 有权
标题翻译：富勒烯基材料制造单位及其制造方法
公开(公告)号：JP2006219364A
公开(公告)日：2006-08-24
申请号：JP2006005983
申请日：2006-01-13
申请人： Ideal Star Inc , 株式会社イデアルスター
发明人： KASAMA YASUHIKO , OMOTE KENJI , KUDO NOBORU
IPC分类号： C01B31/02
摘要： PROBLEM TO BE SOLVED: To solve a problem that the efficient refinement of a fullerene base material such as inclusion fullerene and heterofullerene can not be achieved by the currently used solvent extraction and liquid chromatography, because there is no solvent having sufficiently high solubility to a fullerene base material. SOLUTION: In this method, an ionic or polarized fullerene base materials is refined using electrophoresis. In the method, a fullerene base material which is hard to dissolve in solvents can be efficiently refined and the mass refining of a high purity fullerene base material became possible. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了解决目前使用的溶剂萃取和液相色谱法不能实现富勒烯和异戊二烯等富勒烯基材的有效提纯的问题，因为不存在溶解度高的溶剂到富勒烯基材。解决方案：在该方法中，使用电泳精制离子或极化的富勒烯基材料。在该方法中，可以有效地精制难溶于溶剂的富勒烯基材料，高纯度的富勒烯基材料的大量精制成为可能。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2005325015A Manufacturing method of occlusion fullerene and manufacturing device of occlusion fullerene 审中-公开
标题翻译： OF OF E E E E E E E E E E E E E E E E E E E E E E E E E E E
公开(公告)号：JP2005325015A
公开(公告)日：2005-11-24
申请号：JP2005115573
申请日：2005-04-13
申请人： Ideal Star Inc , 株式会社イデアルスター
发明人： KASAMA YASUHIKO , OMOTE KENJI , KUDO NOBORU
IPC分类号： C01B31/02
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of occlusion fullerene that overcomes the problem of low probability of the formed occulsion fullerene since only coulomb force contributes to the reaction due to the equivalence of the moving directions of the occulusion atomic ions and the fullerene ions in the conventional method comprising irradiating a plasma stream comprised of occlusion atomic ions and fullerene ions to a deposition substrate and controlling the rates of the occlusion atomic ions and the fullerene ions by the action of bias voltage applied to the deposition substrate to enhance the probability of reaction between the occlusion atomic ion and the fullerene ions.
SOLUTION: The manufacturing method comprises introducing the plasma stream consisting of the occlusion atomic ions and the plasma stream consisting of the fullerene ions into a reaction room from the opposite direction to form the occlusion fullerene. Thus, the formation efficiency of the occlusion fullerene is enhanced because not only the coulomb force acted on between ions but also the kinetic energy when ions collide contributes to the formation of the occlusion fullerene.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决问题的方法：提供一种闭塞富勒烯的制造方法，其克服了形成的吸入性富勒烯的概率低的问题，因为只有库仑力有助于由于与原子离子的移动方向等同的反应常规方法中的富勒烯离子包括将由闭塞原子离子和富勒烯离子组成的等离子体流照射到沉积基板上，并通过施加到沉积基板的偏置电压来控制闭塞原子离子和富勒烯离子的速率，以增强闭塞原子离子和富勒烯离子之间的反应概率。解决方案：制造方法包括将由闭塞原子离子组成的等离子体流和由富勒烯离子组成的等离子体流从相反方向引入反应室，形成闭塞富勒烯。因此，闭塞富勒烯的形成效率增强，因为不仅库仑力作用在离子之间，而且离子碰撞时的动能也有助于形成闭塞富勒烯。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2006213968A Method and equipment for ion implantation 审中-公开
标题翻译：用于离子植入的方法和设备
公开(公告)号：JP2006213968A
公开(公告)日：2006-08-17
申请号：JP2005028350
申请日：2005-02-04
申请人： Ideal Star Inc , 株式会社イデアルスター
发明人： KASAMA YASUHIKO , OMOTE KENJI , KUDO NOBORU
IPC分类号： C23C14/48 , C01B31/02 , C23C14/22 , H01J37/317
摘要： PROBLEM TO BE SOLVED: To solve the problem that, in the method for producing encapsulated fullerene by background technology, DC. bias voltage is applied to a deposition substrate in a vacuum vessel, and plasma comprising ions composed of encapsulation atoms is emitted toward the deposition substrate, and simultaneously, fullerene vapor is injected toward the deposition substrate, in the case when deposition time prolongs, a deposited film is charged up by the charge of the ions and the the deposited film is peeled off.
SOLUTION: Positive bias voltage and minus bias voltage are alternately applied to a deposition substrate. By alternately repeating the state of giving accelerated energy to ions and the state of neutralizing the charge of a deposited film, the excessive charge is not accumulated on the deposited film, thus the peeling of the deposited film can be prevented.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了解决在背景技术中制造封装的富勒烯的方法中的DC的问题。偏置电压施加到真空容器中的沉积衬底，并且包含由封装原子组成的离子的等离子体朝向沉积衬底发射，同时，在沉积时间延长的情况下，向沉积衬底注入富勒烯蒸汽，沉积时间延长通过离子的电荷对膜进行充电，并将沉积的膜剥离。
解决方案：正偏置电压和负偏置电压交替施加到沉积衬底。通过交替地重复向离子提供加速能量的状态和中和沉积膜的电荷的状态，过量的电荷不会沉积在沉积膜上，因此可以防止沉积膜的剥离。版权所有（C）2006，JPO＆NCIPI

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