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1. 发明授权

US5734671A Semiconductor laser diode 失效
标题翻译：半导体激光二极管
公开(公告)号：US5734671A
公开(公告)日：1998-03-31
申请号：US522959
申请日：1995-09-01
申请人： Tsukuru Katsuyama , Ichiro Yoshida , Jun-Ichi Hashimoto , Michio Murata
发明人： Tsukuru Katsuyama , Ichiro Yoshida , Jun-Ichi Hashimoto , Michio Murata
IPC分类号： H01S5/00 , B82Y20/00 , H01S5/16 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： H01S5/34313 , B82Y20/00 , H01S5/164 , H01S5/343 , H01S2302/00 , H01S2304/02 , H01S2304/04 , H01S5/2009 , H01S5/2231 , H01S5/3211 , H01S5/3406
摘要： A semiconductor laser diode which can be applied to optical fiber amplifiers to attain a high reliability and can generate light having a wavelength of about 1 .mu.m is provided. This semiconductor laser diode is formed on a GaAs substrate and has an active layer comprising a GaInAsP strained quantum well whose energy band gap is smaller than that of GaAs. Barrier layers each comprising GaInAsP whose band gap is greater than that of the active layer are bonded to the active layer through heterojunction. According to this structure, when the active layer and the barrier layers are grown, the amounts of supply of a Ga material and an In material can be controlled in a simple manner and a semiconductor laser diode having a high reliability can be realized.
摘要翻译：提供了可以应用于光纤放大器以获得高可靠性并且可以产生具有约1μm的波长的光的半导体激光二极管。该半导体激光二极管形成在GaAs衬底上并且具有包含GaInAsP应变量子阱的有源层，其能带隙小于GaAs的能带隙。每个包含GaInAsP的阻挡层的带隙大于有源层的阻挡层通过异质结键合到有源层。根据该结构，当生长有源层和势垒层时，可以以简单的方式控制Ga材料和In材料的供给量，并且可以实现具有高可靠性的半导体激光二极管。

2. 发明授权

US5617957A Method of sorting semiconductor lasers 失效
标题翻译：半导体激光器分选方法
公开(公告)号：US5617957A
公开(公告)日：1997-04-08
申请号：US441692
申请日：1995-05-15
申请人： Ichiro Yoshida , Tsukuru Katsuyama , Jun-ichi Hashimoto
发明人： Ichiro Yoshida , Tsukuru Katsuyama , Jun-ichi Hashimoto
IPC分类号： H01S5/00 , B07C5/344
CPC分类号： H01S5/0021
摘要： It is an object to provide a method of sorting semiconductor lasers, capable of appropriately removing semiconductor lasers which can cause a so-called sudden death in use. After a first current within a range of 50 to 150% the maximum rated current is supplied to the semiconductor lasers for a predetermined period of time, a second current is supplied within a range of 120 to 250% the maximum rated current for a short period of time. Semiconductor lasers which are destroyed or degraded in output characteristics are removed as defective devices.
摘要翻译：本发明的目的是提供一种分选半导体激光器的方法，其能够适当地去除在使用中可能导致所谓的猝死的半导体激光器。在50至150％的范围内的第一电流之后，将最大额定电流提供给半导体激光器预定的时间段，第二电流在短时间内在最大额定电流的120至250％的范围内提供的时间。输出特性被破坏或劣化的半导体激光器作为有缺陷的装置被去除。

3. 发明授权

US5586135A Semiconductor laser having an AlGaInP cladding layer 失效
标题翻译：具有AlGaInP包覆层的半导体激光器
公开(公告)号：US5586135A
公开(公告)日：1996-12-17
申请号：US174067
申请日：1993-12-28
申请人： Ichiro Yoshida , Tsukuru Katsuyama , Jun-ichi Hashimoto
发明人： Ichiro Yoshida , Tsukuru Katsuyama , Jun-ichi Hashimoto
IPC分类号： H01S5/22 , H01S5/223 , H01S5/32 , H01S5/343 , H01S3/18
CPC分类号： B82Y20/00 , H01S5/2231 , H01S5/34313 , H01S5/2209 , H01S5/3211
摘要： A semiconductor laser includes a GaAs substrate, an active layer made of a semiconductor material having a band gap energy smaller than that of GaAs, and a top clad having an AlGaInP cladding layer. An index antiguiding type semiconductor laser is constituted based on the above structure. The top clad includes a base layer formed on the active layer and a protrusion strip for current injection protruding from the base layer and having an AlGaInP cladding layer. An AlGaInP light diffusion layer with an Al proportion smaller than that of the AlGaInP cladding layer and inclusive of zero is formed on the base layer adjacent to the protrusion strip. The base layer has a thickness so as to allow laser oscillation light to leak out to the light diffusion layer.
摘要翻译：半导体激光器包括GaAs衬底，由具有小于GaAs的带隙能量的半导体材料制成的有源层和具有AlGaInP包覆层的顶部包层。基于上述结构构成指示性防护型半导体激光器。顶部包层包括形成在有源层上的基底层和从基底层突出并具有AlGaInP包层的电流注入用突起条。在与突起条相邻的基底层上形成Al比例小于AlGaInP包覆层的Al GaInP光扩散层并且包含0的AlGaInP光扩散层。基底层具有使激光振荡光泄漏到光扩散层的厚度。

4. 发明授权

US5446537A Method of sorting semiconductor lasers 失效
标题翻译：半导体激光器分选方法
公开(公告)号：US5446537A
公开(公告)日：1995-08-29
申请号：US268534
申请日：1994-07-06
申请人： Ichiro Yoshida , Tsukuru Katsuyama , Jun-ichi Hashimoto
发明人： Ichiro Yoshida , Tsukuru Katsuyama , Jun-ichi Hashimoto
IPC分类号： G01M11/00 , G01N21/88 , G01R31/26 , H01L21/66 , H01S5/00 , H01S5/02
CPC分类号： G01R31/2635 , G01N21/88 , G01R31/2642 , H01S5/0021
摘要： It is an object to provide a method of sorting semiconductor lasers, capable of appropriately removing semiconductor lasers which can cause a so-called sudden death in use. After a first current within a range of 50 to 150% the maximum rated current is supplied to the semiconductor lasers for a predetermined period of time, a second current is supplied within a range of 120 to 250% the maximum rated current for a short period of time. Semiconductor lasers which are destroyed or degraded in output characteristics are removed as defective devices.
摘要翻译：本发明的目的是提供一种分选半导体激光器的方法，其能够适当地去除在使用中可能导致所谓的猝死的半导体激光器。在50至150％的范围内的第一电流之后，将最大额定电流提供给半导体激光器预定的时间段，第二电流在短时间内在最大额定电流的120至250％的范围内提供的时间。输出特性被破坏或劣化的半导体激光器作为有缺陷的装置被去除。

5. 发明授权

US5276698A Semiconductor laser having an optical waveguide layer including an AlGaInP active layer 失效
标题翻译：具有包括AlGaInP有源层的光波导层的半导体激光器
公开(公告)号：US5276698A
公开(公告)日：1994-01-04
申请号：US761069
申请日：1991-09-18
申请人： Ichiro Yoshida , Tsukuru Katsuyama
发明人： Ichiro Yoshida , Tsukuru Katsuyama
IPC分类号： H01L33/00 , H01L33/06 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343 , H01S5/40 , H01S3/19
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/0062 , H01S5/20 , H01S5/34326 , H01S5/2004 , H01S5/2231 , H01S5/3201 , H01S5/3211 , H01S5/32325 , H01S5/3406 , H01S5/3407 , H01S5/40
摘要： A semiconductor laser comprises an optical wave guide layer including an AlGaInP active layer and AlGaInP optical confinement layers holding the active layer therebetween. A well structure of an energy band is formed and a compressive stress is applied to the activation layer by the difference between the compositions of the activation layer and the optical confinement layers. Since the compressive stress is applied to the activation layer, the oscillation threshold is lower than that of an un-strained device. Accordingly, the rise of the oscillation threshold due to the addition of Al is compensated and continuous oscillation at room temperature is attained and visible light having a wavelength of 0.67 .mu.m or lower, which has been difficult to attain in the past, is produced. The semiconductor laser having a multi-quantum well structure is manufactured by using AlGaInP or GaInP as a semiconductor material of the multi-quantum well structure and epitaxially growing by periodically changing a supply rate of only In. Through a very simple method of periodically changing the supply rate of only In, a well layer having a compressive stress applied thereto and a barrier layer having a tensile stress applied thereto are alternately grown and the activation layer having the desired strained multi-quantum well structure is produced.
摘要翻译：半导体激光器包括包括AlGaInP有源层的光波导层和在其间保持有源层的AlGaInP光限制层。形成能带的良好结构，并且通过活化层和光限制层的组成之间的差异将压应力施加到活化层。由于压应力施加于活化层，所以振荡阈值低于非应变器件的振荡阈值。因此，由于添加了Al而引起的振荡阈值的上升被补偿，并且在室温下获得连续振荡，并且在过去难以获得的波长为0.67（my）m或更低的可见光是生产。具有多量子阱结构的半导体激光器通过使用AlGaInP或GaInP作为多量子阱结构的半导体材料并通过周期性地改变仅In的供给速率而外延生长而制造。通过周期性地改变仅In的供给速率的非常简单的方法，施加施加压缩应力的阱层和施加到其上的拉伸应力的阻挡层交替生长，并且具有期望的应变多量子阱结构的活化层生产。

6. 发明授权

US5479427A Semiconductor laser and method of manufacturing the same 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US5479427A
公开(公告)日：1995-12-26
申请号：US196434
申请日：1994-02-15
申请人： Ichiro Yoshida , Tsukuru Katsuyama , Junichi Hashimoto
发明人： Ichiro Yoshida , Tsukuru Katsuyama , Junichi Hashimoto
IPC分类号： H01S5/00 , H01S5/223 , H01S5/32 , H01S5/343 , H01S3/18
CPC分类号： H01L33/30 , B82Y20/00 , H01S5/34313 , H01S2302/00 , H01S5/223 , H01S5/3211
摘要： In a semiconductor laser having a p-type cladding layer consisting of GaInP or AlGaInP, an operating voltage is decreased. In a semiconductor laser formed on a GaAs substrate and having a p-type cladding layer consisting of GaInP or AlGaInP and a p-type contact layer consisting of GaAs or GalnAs, p-type buffer layers are formed between the p-type cladding layer and the p-type contact layer, which consists of a compound containing both arsenic (As) and phosphorus (P) and having a medium bandgap between those of the two layers.
摘要翻译：在具有由GaInP或AlGaInP构成的p型覆层的半导体激光器中，工作电压降低。在GaAs衬底上形成的具有由GaInP或AlGaInP构成的p型覆层和由GaAs或GalnAs构成的p型接触层的半导体激光器中，在p型覆层和 p型接触层，其由含有砷（As）和磷（P）的化合物组成，并且在两层之间具有中等带隙。

7. 发明授权

US5663975A Multi-beam semiconductor laser with separated contacts characterized by semiconductor mixed crystal and active layer 失效
标题翻译：具有分离接触的多光束半导体激光器的特征在于半导体混晶和有源层
公开(公告)号：US5663975A
公开(公告)日：1997-09-02
申请号：US417272
申请日：1995-04-05
申请人： Ichiro Yoshida , Tsukuru Katsuyama , Junichi Hashimoto
发明人： Ichiro Yoshida , Tsukuru Katsuyama , Junichi Hashimoto
IPC分类号： H01S5/024 , H01S5/026 , H01S5/06 , H01S5/068 , H01S5/223 , H01S5/323 , H01S5/40 , H01S3/19
CPC分类号： H01S5/4031 , H01S5/0028 , H01S5/024 , H01S5/02453 , H01S5/0261 , H01S5/0425 , H01S5/0612 , H01S5/068 , H01S5/06825 , H01S5/2231 , H01S5/32325
摘要： This semiconductor laser includes resistors as heating means through insulation films for generating pre-heat of substantially the same calorie as oscillation heat generated when the laser resonator are driven. When the light emitting regions as the light source are driven, first the heating means is actuated to give pre-heat to the laser resonators. After the laser resonators are driven, the heating means is stopped to decrease a calories of the pre-heat. It is preferable that the pre-heat has substantially the same calories as the above-described generated heat, but may be below the generated heat. Specifically, when all of the two laser resonators are driven, the heating means may generate a calories for one laser beam so as to suppress the heat crosstalks due to the mutual influence of the heat generation of the laser beams. In this case, the heating means stops heating only while both laser resonators are being driven, and continues heating in other cases. Thus, whether or not one and/or the other of the light emitting regions is driven, the laser chip has a substantially constant temperature, and temperature changes before and after an actuation is suppressed. As a result, laser beams of uniform output levels can be supplied to the printing unit of a laser printer.
摘要翻译：该半导体激光器包括作为加热装置的电阻器，该绝缘膜用于产生与驱动激光谐振器时产生的振荡热量基本上相同卡路里的预热。当驱动作为光源的发光区域时，首先致动加热装置以向激光谐振器提供预热。在驱动激光谐振器之后，停止加热装置以降低预热的热量。优选的是，预热具有与上述产生的热量大致相同的卡路里，但可以低于产生的热量。具体地说，当驱动两个激光谐振器的全部时，加热装置可以产生一个激光束的热量，以便抑制由于激光束的发热的相互影响而产生的热串扰。在这种情况下，加热装置仅在两个激光谐振器被驱动时停止加热，并且在其它情况下继续加热。因此，无论驱动发光区域中的一个和/或另一个，激光芯片具有基本上恒定的温度，并且抑制致动之前和之后的温度变化。结果，可以向激光打印机的打印单元提供均匀输出电平的激光束。

8. 发明授权

US5359619A Multi-beam semiconductor laser and method for producing the same 失效
标题翻译：多光束半导体激光器及其制造方法
公开(公告)号：US5359619A
公开(公告)日：1994-10-25
申请号：US19652
申请日：1993-02-19
申请人： Ichiro Yoshida , Tsukuru Katsuyama , Junichi Hashimoto
发明人： Ichiro Yoshida , Tsukuru Katsuyama , Junichi Hashimoto
IPC分类号： H01L33/00 , H01S5/024 , H01S5/026 , H01S5/06 , H01S5/068 , H01S5/223 , H01S5/323 , H01S5/40 , H01S3/19
CPC分类号： H01S5/4031 , H01L33/0062 , H01S5/024 , H01S5/0261 , H01S5/0612 , H01S5/068 , H01S5/06825 , H01S5/2231 , H01S5/32325
摘要： This is disclosed a multi-beam semiconductor laser comprising: an active layer; a first and second cladding layer sandwiching the active layer,the second cladding layer being made of a first material; a contact layer provided on the second cladding layer; a current block layer provided in the second cladding layer, the current block layer being made of a second material and being spaced from the active layer with a predetermined distance; a dividing part provided above the current block for physically dividing the contact layer into two areas; and electrodes respectively provided on the divided areas of the contact layer.
摘要翻译：公开了一种多光束半导体激光器，包括：有源层; 夹着有源层的第一和第二覆层，第二覆层由第一材料制成; 设置在所述第二包覆层上的接触层; 设置在所述第二包层中的当前阻挡层，所述电流阻挡层由第二材料制成并且与所述有源层以预定距离间隔开; 分配部，其设置在当前块的上方，用于将接触层物理分割成两个区域; 以及分别设置在接触层的分割区域上的电极。

9. 发明授权

US08725331B2 Charge-discharge management apparatus and system for vehicle 有权
标题翻译：车辆充放电管理装置及系统
公开(公告)号：US08725331B2
公开(公告)日：2014-05-13
申请号：US13210498
申请日：2011-08-16
申请人： Ichiro Yoshida
发明人： Ichiro Yoshida
IPC分类号： B60L11/18 , B60L3/00 , B60L11/02 , B60L11/12
CPC分类号： B60L11/1842 , B60L15/2045 , B60L2240/62 , B60L2240/72 , B60L2260/50 , Y02E60/721 , Y02T10/645 , Y02T10/7005 , Y02T10/7072 , Y02T10/72 , Y02T10/7283 , Y02T10/7291 , Y02T90/121 , Y02T90/128 , Y02T90/14 , Y02T90/16 , Y02T90/162 , Y02T90/163 , Y04S10/126
摘要： A charge-discharge management system for a vehicle running using electricity stored in a battery is disclosed. The system creates a charge-discharge schedule of the battery for a travel route of the vehicle according to the travel route of the vehicle and a condition of the vehicle or a road, so that a charge amount of the battery falls within a predetermined range in the travel route. The systems corrects the charge-discharge schedule by comparing between the charge amount actually in the battery and the charge amount in the charge-discharge schedule.
摘要翻译：公开了一种使用存储在电池中的电力运行的车辆的充放电管理系统。该系统根据车辆的行驶路线和车辆或道路的状况，为车辆的行驶路线创建充电 - 放电时间表，使得电池的充电量落在预定范围内旅行路线。系统通过比较实际在电池中的充电量与充电 - 放电时间表中的充电量来校正充电 - 放电计划。

10. 发明授权

US07636663B2 On-vehicle acoustic control system and method 有权
标题翻译：车载声控系统及方法
公开(公告)号：US07636663B2
公开(公告)日：2009-12-22
申请号：US11231085
申请日：2005-09-20
申请人： Ichiro Yoshida , Kazunao Yamada
发明人： Ichiro Yoshida , Kazunao Yamada
IPC分类号： G10L21/00 , G10L11/00
CPC分类号： G01C21/36
摘要： An on-vehicle acoustic control system determines which one of sounds of an audio device and a navigation device should be generated with priority, when both devices are requested to generate respective sounds. The control system further detects a user's physical condition based on an interaction with the user, a picture of the user and biometric information of the user. The control system generates sound in the order of determined priority, and varies the manner of sound generation based on the user's physical condition.
摘要翻译：当两个设备被要求产生相应的声音时，车载声学控制系统确定优先地生成音频设备和导航设备的哪一个声音。控制系统还基于与用户的交互，用户的图片和用户的生物特征信息进一步检测用户的身体状况。控制系统以确定的优先级的顺序产生声音，并且基于用户的身体状况改变声音生成的方式。

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