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1. 发明申请

US20060115588A1 System and method of fabrication and application of thin-films with continuously graded or discrete physical property parameters to functionally broadband monolithic microelectronic optoelectronic/sensor/actuator device arrays 有权
标题翻译：具有连续分级或离散物理参数的薄膜的制造和应用的系统和方法，用于功能宽带单片微电子光电/传感器/致动器器件阵列
公开(公告)号：US20060115588A1
公开(公告)日：2006-06-01
申请号：US10998149
申请日：2004-11-29
申请人： Ichiro Takeuchi , Wei Yang , Kao-Shuo Chang , Ratnakar Vispute , Thirumalai Venkatesan
发明人： Ichiro Takeuchi , Wei Yang , Kao-Shuo Chang , Ratnakar Vispute , Thirumalai Venkatesan
IPC分类号： C23C16/00
CPC分类号： C23C14/08 , C23C14/0084
摘要： A system and method are provided to fabricate thin-films having different physical property parameters or having physical property parameters that continuously change across functionally broadband monolithic device arrays. The fabrication method deposits the thin-film including layers on a substrate of a monolithic chip. The method defines a desired gradient profile of each layer forming the thin-film, each gradient profile including a desired thinnest profile and a desired thickest profile. The method further aligns an aperture of a mask over the substrate to form the thin-film and calculates a shutter speed for the specified gradient profile of each layer across the desired area of the substrate, and deposits each layer on the substrate, through the aperture, as the aperture of the shutter moves at the calculated shutter speed from the desired thinnest profile of each layer to the desired thickest profile of each layer.
摘要翻译：提供了一种系统和方法来制造具有不同物理性质参数或具有在功能上宽带单片器件阵列上连续变化的物理性质参数的薄膜。制造方法将薄膜包括层沉积在单片芯片的基板上。该方法定义了形成薄膜的每个层的期望的梯度轮廓，每个梯度轮廓包括期望的最薄轮廓和期望的最厚轮廓。该方法进一步将掩模的孔径对准衬底上的孔径以形成薄膜，并且计算穿过衬底的期望区域的每层的指定梯度分布的快门速度，并通过孔径将每个层沉积在衬底上，因为快门的光圈以所计算的快门速度从每层的期望的最薄轮廓移动到每层的期望的最厚轮廓。

2. 发明授权

US07132668B2 MgZnO based UV detectors 失效
标题翻译：基于MgZnO的紫外检测器
公开(公告)号：US07132668B2
公开(公告)日：2006-11-07
申请号：US10311997
申请日：2001-06-26
申请人： Ratnakar Vispute , Thirumalai Venkatesan , Wei Yang , Supab Choopun
发明人： Ratnakar Vispute , Thirumalai Venkatesan , Wei Yang , Supab Choopun
IPC分类号： G01J5/00
CPC分类号： H01L31/109 , H01L31/022408 , H01L31/0236 , H01L31/0288 , Y02E10/50
摘要： Photoconductive devices (1,2) comprising MgxZn1−xO, that is preferably epitaxially deposited on a substrate (21), optionally also including a buffer layer (22), wherein x has a value such that the layer is sensitive to UV light. The a MgZnO device (2) having predetermined electrical and optical properties and first and second electrodes (3) deposited on a surface of the device, the second electrode being spaced from the first electrode. A voltage source (4) is connected across the first and second electrodes to create an electric field within the device. In operation, when the surface of the device upon which the electrodes are deposited is subjected to a photon emission, electron-hole pairs are created within the device and flow within the device because of the electric field.
摘要翻译：优选外延沉积在衬底（21）上的包含Mg x Zn 1-x O O的光导器件（1,2），任选地还包括缓冲层（22 ），其中x具有使得该层对UV光敏感的值。具有预定电气和光学特性的MgZnO器件（2）和沉积在器件表面上的第一和第二电极（3），第二电极与第一电极间隔开。电压源（4）跨越第一和第二电极连接以在器件内产生电场。在操作中，当沉积有电极的器件的表面经受光子发射时，由于电场，在器件内部产生电子 - 空穴对并在器件内流动。

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