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    • 1. 发明授权
    • Glass article with metal member joined thereto, and junction structure using the same
    • 与其连接的金属构件的玻璃制品以及使用其的结构结构
    • US07514654B2
    • 2009-04-07
    • US10506385
    • 2003-03-11
    • Ichiro OkajimaHideki WatanabeKazuo Yamada
    • Ichiro OkajimaHideki WatanabeKazuo Yamada
    • H05B3/06B05D1/02
    • H05B3/84B23K1/0008B23K1/20B23K35/262B23K2103/12B23K2103/16B23K2103/18B23K2103/54H01R4/02H01R4/04H01R4/62H01R4/625H01R4/64H01R2201/02H01R2201/26H05B2203/016
    • The present invention is intended to provide a glass article with a metal member joined thereto in which an electroconductive coating film is formed on at least a part of the surface of the glass article by baking a silver paste that includes Ag particles and a glass frit, a joining plane of the metal member is fixed onto the electroconductive coating film with a lead-free solder alloy containing Sn as a main component, and the lead-free solder alloy contains at least 1.5 mass % of Ag, which prevents the appearance of the electroconductive coating film and the bonding strength from degrading. Furthermore, in the present invention, when using a metal member having at least two joining planes, the total area of the joining planes is set within a range of 37 mm2 to 50 mm2, which allows high bonding strength between the glass article and metal member to be maintained while using the lead-free solder alloy. Moreover, in the present invention, the volume of the lead-free solder alloy to be provided on each joining plane is set to be 1.0 to 2.0 times the product of the area of the joining plane concerned and the thickness of the lead-free solder alloy, which prevents cracks from occurring in the glass article.
    • 本发明旨在提供一种具有连接到其上的金属部件的玻璃制品,其中通过烘烤包括Ag颗粒和玻璃料的银膏在玻璃制品的至少一部分表面上形成导电涂层, 使用含有Sn作为主要成分的无铅焊料将金属构件的接合面固定在导电性涂膜上,无铅焊料合金含有Ag的1.5质量%以上,防止了 导电涂膜和粘合强度降低。 此外,在本发明中,当使用具有至少两个接合面的金属构件时,接合面的总面积设定在37mm 2〜50mm 2的范围内,这允许玻璃制品和金属构件之间的高的接合强度 在使用无铅焊料合金时进行维护。 此外,在本发明中,设置在各接合面上的无铅焊料合金的体积设定为所涉接合面积的面积与无铅焊料的厚度的1.0〜2.0倍 合金,其防止在玻璃制品中发生裂纹。
    • 2. 发明申请
    • Glass fixture-joined glass article and joint structure using this
    • 玻璃夹具接合玻璃制品和使用这种连接结构
    • US20050112291A1
    • 2005-05-26
    • US10506385
    • 2003-03-11
    • Ichiro OkajimaHideki WatanabeKazuo Yamada
    • Ichiro OkajimaHideki WatanabeKazuo Yamada
    • B23K1/00B23K1/20B23K35/26H01R4/02H01R4/04H01R4/62H01R4/64H05B3/84B05D1/02
    • H05B3/84B23K1/0008B23K1/20B23K35/262B23K2103/12B23K2103/16B23K2103/18B23K2103/54H01R4/02H01R4/04H01R4/62H01R4/625H01R4/64H01R2201/02H01R2201/26H05B2203/016
    • The present invention is intended to provide a glass article with a metal member joined thereto in which an electroconductive coating film is formed on at least a part of the surface of the glass article by baking a silver paste that includes Ag particles and a glass frit, a joining plane of the metal member is fixed onto the electroconductive coating film with a lead-free solder alloy containing Sn as a main component, and the lead-free solder alloy contains at least 1.5 mass % of Ag, which prevents the appearance of the electroconductive coating film and the bonding strength from degrading. Furthermore, in the present invention, when using a metal member having at least two joining planes, the total area of the joining planes is set within a range of 37 mm2 to 50 mm2, which allows high bonding strength between the glass article and metal member to be maintained while using the lead-free solder alloy. Moreover, in the present invention, the volume of the lead-free solder alloy to be provided on each joining plane is set to be 1.0 to 2.0 times the product of the area of the joining plane concerned and the thickness of the lead-free solder alloy, which prevents cracks from occurring in the glass article.
    • 本发明旨在提供一种具有连接到其上的金属构件的玻璃制品,其中通过烘烤包括Ag颗粒和玻璃料的银膏在玻璃制品的至少一部分表面上形成导电涂层, 使用含有Sn作为主要成分的无铅焊料将金属构件的接合面固定在导电性涂膜上,无铅焊料合金含有Ag的1.5质量%以上,防止了 导电涂膜和粘合强度降低。 此外,在本发明中,当使用具有至少两个接合面的金属构件时,接合面的总面积设定在37mm×2mm〜50mm的范围内, / SUP>,其在使用无铅焊料合金的同时保持玻璃制品和金属构件之间的高粘结强度。 此外,在本发明中,设置在各接合面上的无铅焊料合金的体积设定为所涉接合面积的面积与无铅焊料的厚度的1.0〜2.0倍 合金,其防止在玻璃制品中发生裂纹。
    • 3. 发明授权
    • Television and electronic device
    • 电视和电子设备
    • US09148713B2
    • 2015-09-29
    • US13489648
    • 2012-06-06
    • Tomofumi MiyamotoHideki Watanabe
    • Tomofumi MiyamotoHideki Watanabe
    • H04R1/02H04R5/02
    • H04R1/02H04R1/025
    • According to at least one embodiment, a television includes a housing further including a pair of corner portions and an enclosed space on an inner side thereof, a pair of speaker boxes housed in the enclosed space in vicinities of the corner portions, a pair of speakers housed in the speaker boxes respectively in a direction which crosses a thickness direction of the housing, and each of the speaker boxes further includes a first duct to guide sounds from a first side of the respective speaker to the respective first opening portion and a second duct to guide sounds from a second side of the respective speaker towards the enclosed space.
    • 根据至少一个实施例,电视机包括还包括一对角部和在其内侧上的封闭空间的壳体,一对容纳在角部附近的封闭空间中的扬声器箱,一对扬声器 分别沿着与壳体的厚度方向交叉的方向容纳在扬声器箱中,并且每个扬声器盒还包括第一导管,用于将声音从相应扬声器的第一侧引导到相应的第一开口部分,第二导管 以将声音从相应扬声器的第二侧引向封闭空间。
    • 6. 发明授权
    • Mode-locked semiconductor laser device and driving method thereof
    • 锁模半导体激光器件及其驱动方法
    • US08442079B2
    • 2013-05-14
    • US13035540
    • 2011-02-25
    • Tomoyuki OkiMasaru KuramotoMasao IkedaTakao MiyajimaHideki WatanabeHiroyuki Yokoyama
    • Tomoyuki OkiMasaru KuramotoMasao IkedaTakao MiyajimaHideki WatanabeHiroyuki Yokoyama
    • H01S3/098
    • Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2×1018 cm−3 or more and 1×1020 cm−3 or less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.
    • 提供了一种锁模半导体激光器件的驱动方法,其包括层叠结构,其中第一化合物半导体层,具有发射区域的第三化合物半导体层和第二化合物半导体层被连续层压,第二电极和 第一电极。 层叠结构形成在具有极性的化合物半导体基板上,第三化合物半导体层包括具有阱层和阻挡层的量子阱结构。 阱层的深度为1nm以上且10nm以下。 势垒层的杂质掺杂密度为2×1018cm-3以上且1×1020cm-3以下。 通过将电流从第二电极通过层压结构传递到第一电极,在发射区域中产生光脉冲。