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1. 发明申请

US20050280069A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050280069A1
公开(公告)日：2005-12-22
申请号：US10923831
申请日：2004-08-24
申请人： Ichiro Mizushima , Tetsuya Kai , Yoshio Ozawa , Kouichi Muraoka , Shinichi Nakamura
发明人： Ichiro Mizushima , Tetsuya Kai , Yoshio Ozawa , Kouichi Muraoka , Shinichi Nakamura
IPC分类号： H01L21/8247 , H01L27/105 , H01L27/115 , H01L29/423 , H01L29/76
CPC分类号： H01L27/11521 , H01L27/115 , H01L29/42336 , H01L29/512
摘要： A semiconductor device using a high dielectric constant insulator having reduced leak current as an interelectrode insulator is provided by comprising a first insulator formed on a semiconductor substrate, a first gate electrode formed on the first insulator, a second gate electrode formed above the first gate electrode, and a second crystallized insulator formed between the first gate electrode and the second gate electrode.
摘要翻译：通过包括形成在半导体衬底上的第一绝缘体，形成在第一绝缘体上的第一栅极电极和形成在第一栅电极之上的第二栅极电极，提供使用具有减小的漏电流的高介电常数绝缘体作为电极间绝缘体的半导体器件以及形成在第一栅电极和第二栅电极之间的第二结晶绝缘体。

2. 发明授权

US07521263B2 Method of forming an insulating film, method of manufacturing a semiconductor device, and semiconductor device 有权
标题翻译：形成绝缘膜的方法，制造半导体器件的方法以及半导体器件
公开(公告)号：US07521263B2
公开(公告)日：2009-04-21
申请号：US11270536
申请日：2005-11-10
申请人： Ichiro Mizushima , Masayuki Tanaka , Katsuaki Natori , Yoshio Ozawa , Seiji Inumiya , Katsuyuki Sekine , Tetsuya Kai
发明人： Ichiro Mizushima , Masayuki Tanaka , Katsuaki Natori , Yoshio Ozawa , Seiji Inumiya , Katsuyuki Sekine , Tetsuya Kai
IPC分类号： H01L21/00
CPC分类号： H01L21/02236 , H01L21/022 , H01L21/28273 , H01L21/3142 , H01L21/31616 , H01L21/31645 , H01L29/513 , H01L29/7881
摘要： A method of forming an insulating film includes forming a base film comprising a material whose surface is oxidized by being exposed to an oxidant. A source gas containing a metal material and a first oxidant having a first oxidation force are alternately supplied to form a first insulating film on the base film. A source gas containing a metal material and a second oxidant having a second oxidation force stronger than the first oxidation force are alternately supplied to form a second insulating film on the first insulating film.
摘要翻译：形成绝缘膜的方法包括形成包括通过暴露于氧化剂而使其表面被氧化的材料的基膜。交替地供给含有金属材料的源气体和具有第一氧化力的第一氧化剂，以在基膜上形成第一绝缘膜。交替地供给含有金属材料的源气体和具有比第一氧化力更强的第二氧化力的第二氧化剂，以在第一绝缘膜上形成第二绝缘膜。

3. 发明申请

US20070020957A1 Method of forming an insulating film, method of manufacturing a semiconductor device, and semiconductor device 有权
标题翻译：形成绝缘膜的方法，制造半导体器件的方法以及半导体器件
公开(公告)号：US20070020957A1
公开(公告)日：2007-01-25
申请号：US11270536
申请日：2005-11-10
申请人： Ichiro Mizushima , Masayuki Tanaka , Katsuaki Natori , Yoshio Ozawa , Seiji Inumiya , Katsuyuki Sekine , Tetsuya Kai
发明人： Ichiro Mizushima , Masayuki Tanaka , Katsuaki Natori , Yoshio Ozawa , Seiji Inumiya , Katsuyuki Sekine , Tetsuya Kai
IPC分类号： B05D3/08 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02236 , H01L21/022 , H01L21/28273 , H01L21/3142 , H01L21/31616 , H01L21/31645 , H01L29/513 , H01L29/7881
摘要： A method of forming an insulating film includes forming a base film comprising a material whose surface is oxidized by being exposed to an oxidant. A source gas containing a metal material and a first oxidant having a first oxidation force are alternately supplied to form a first insulating film on the base film. A source gas containing a metal material and a second oxidant having a second oxidation force stronger than the first oxidation force are alternately supplied to form a second insulating film on the first insulating film.
摘要翻译：形成绝缘膜的方法包括形成包括通过暴露于氧化剂而使其表面被氧化的材料的基膜。交替地供给含有金属材料的源气体和具有第一氧化力的第一氧化剂，以在基膜上形成第一绝缘膜。交替地供给含有金属材料的源气体和具有比第一氧化力更强的第二氧化力的第二氧化剂，以在第一绝缘膜上形成第二绝缘膜。

4. 发明授权

US08455346B2 Method for manufacturing nonvolatile memory device 有权
标题翻译：非易失性存储器件的制造方法
公开(公告)号：US08455346B2
公开(公告)日：2013-06-04
申请号：US13075658
申请日：2011-03-30
申请人： Yasuhiro Nojiri , Hiroyuki Fukumizu , Shinichi Nakao , Kei Watanabe , Kazuhiko Yamamoto , Ichiro Mizushima , Yoshio Ozawa
发明人： Yasuhiro Nojiri , Hiroyuki Fukumizu , Shinichi Nakao , Kei Watanabe , Kazuhiko Yamamoto , Ichiro Mizushima , Yoshio Ozawa
IPC分类号： H01L21/4763 , G11C11/00
CPC分类号： H01L51/0591 , B82Y10/00 , B82Y40/00 , G11C13/0002 , G11C13/025 , G11C2213/71 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/149 , H01L45/1608
摘要： According to one embodiment, a method is disclosed for manufacturing a nonvolatile memory device. The nonvolatile memory device includes a memory cell connected to a first interconnect and a second interconnect. The method can include forming a first electrode film on the first interconnect. The method can include forming a layer including a plurality of carbon nanotubes dispersed inside an insulator on the first electrode film. At least one carbon nanotube of the plurality of carbon nanotubes is exposed from a surface of the insulator. The method can include forming a second electrode film on the layer. In addition, the method can include forming a second interconnect on the second electrode film.
摘要翻译：根据一个实施例，公开了一种用于制造非易失性存储器件的方法。非易失性存储器件包括连接到第一互连和第二互连的存储单元。该方法可以包括在第一互连上形成第一电极膜。该方法可以包括在第一电极膜上形成分散在绝缘体内的多个碳纳米管的层。多个碳纳米管中的至少一个碳纳米管从绝缘体的表面露出。该方法可以包括在该层上形成第二电极膜。此外，该方法可以包括在第二电极膜上形成第二互连。

5. 发明申请

US20110108905A1 NONVOLATILE SEMICONDUCTOR MEMORY 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US20110108905A1
公开(公告)日：2011-05-12
申请号：US13007258
申请日：2011-01-14
申请人： Masayuki ICHIGE , Fumitaka Arai , Riichiro Shirota , Toshitake Yaegashi , Yoshio Ozawa , Akihito Yamamoto , Ichiro Mizushima , Yoshihiko Saito
发明人： Masayuki ICHIGE , Fumitaka Arai , Riichiro Shirota , Toshitake Yaegashi , Yoshio Ozawa , Akihito Yamamoto , Ichiro Mizushima , Yoshihiko Saito
IPC分类号： H01L29/788
CPC分类号： H01L29/42336 , H01L21/28273 , H01L27/0207 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42324 , H01L29/7881
摘要： A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells.
摘要翻译：非易失性半导体存储器包括具有浮动栅极和控制栅极的第一和第二存储单元。第一和第二存储单元的浮动栅极包括第一部分和布置在第一部分上的第二部分，并且第二部分在控制栅极的延伸方向上的宽度比第一部分的宽度窄。第一和第二存储单元的第一部分之间的第一空间填充有一种绝缘体。控制栅极被布置在第一和第二存储单元的第二部分之间的第二空间处。

6. 发明申请

US20090004833A1 METHOD OF MANUFACTURING SEMICONDUCTOR STORAGE DEVICE 有权
标题翻译：制造半导体存储器件的方法
公开(公告)号：US20090004833A1
公开(公告)日：2009-01-01
申请号：US12146802
申请日：2008-06-26
申请人： Takashi Suzuki , Hirokazu Ishida , Ichiro Mizushima , Yoshio Ozawa , Fumiki Aiso , Katsuyuki Sekine , Takashi Nakao , Yoshihiko Saito
发明人： Takashi Suzuki , Hirokazu Ishida , Ichiro Mizushima , Yoshio Ozawa , Fumiki Aiso , Katsuyuki Sekine , Takashi Nakao , Yoshihiko Saito
IPC分类号： H01L21/20
CPC分类号： H01L27/115 , H01L21/76264 , H01L21/84 , H01L27/11521 , H01L27/11524 , H01L27/1203 , H01L29/66825
摘要： A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the opening portions are formed, and in the opening portions. Then, trenches are formed to divide the amorphous silicon film, in the vicinity of a midpoint between adjacent opening portions, into a portion on one opening portion side and a portion on the other opening portion side. Next, the amorphous silicon film, in which the trenches are formed, is annealed and subjected to solid-phase crystallization to form a single crystal with the opening portions used as seeds, and thereby a silicon single-crystal layer is formed. Then, a memory cell array is formed on the silicon single-crystal layer.
摘要翻译：一种制造半导体存储装置的方法包括在形成在硅衬底上的绝缘膜中的多个位置提供开口部分，然后在其中形成开口部分的绝缘膜上形成非晶硅膜，并且在开口部。然后，形成沟槽，将相邻的开口部之间的中点附近的非晶硅膜分割成一个开口部侧的一部分和另一个开口部侧的一部分。接着，对其中形成沟槽的非晶硅膜进行退火并进行固相结晶以形成具有用作晶种的开口部分的单晶，从而形成硅单晶层。然后，在硅单晶层上形成存储单元阵列。

7. 发明申请

US20080012061A1 NONVOLATILE SEMICONDUCTOR MEMORY 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US20080012061A1
公开(公告)日：2008-01-17
申请号：US11687758
申请日：2007-03-19
申请人： Masayuki Ichige , Fumitaka Arai , Riichiro Shirota , Toshitake Yaegashi , Yoshio Ozawa , Akihito Yamamoto , Ichiro Mizushima , Yoshihiko Saito
发明人： Masayuki Ichige , Fumitaka Arai , Riichiro Shirota , Toshitake Yaegashi , Yoshio Ozawa , Akihito Yamamoto , Ichiro Mizushima , Yoshihiko Saito
IPC分类号： H01L29/788
CPC分类号： H01L29/42336 , H01L21/28273 , H01L27/0207 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42324 , H01L29/7881
摘要： A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells.
摘要翻译：非易失性半导体存储器包括具有浮动栅极和控制栅极的第一和第二存储单元。第一和第二存储单元的浮置栅极包括第一部分和布置在第一部分上的第二部分，并且第二部分在控制栅极的延伸方向上的宽度比第一部分的宽度窄。第一和第二存储单元的第一部分之间的第一空间填充有一种绝缘体。控制栅极被布置在第一和第二存储单元的第二部分之间的第二空间处。

8. 发明申请

US20070254434A1 Semiconductor device and manufacturing method thereof 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070254434A1
公开(公告)日：2007-11-01
申请号：US11819428
申请日：2007-06-27
申请人： Ichiro Mizushima , Yoshio Ozawa
发明人： Ichiro Mizushima , Yoshio Ozawa
IPC分类号： H01L21/336
CPC分类号： H01L27/115 , G11C16/0483 , H01L27/11521 , H01L29/40114 , H01L29/66825 , H01L29/7881
摘要： A semiconductor device includes a semiconductor substrate including an active area (AA) surrounded by an isolation insulating film, and a nonvolatile memory cell on the AA, the nonvolatile memory cell including a tunnel insulating film on the AA, a FG electrode on the tunnel insulating film, a CG electrode above the FG electrode, and an interelectrode insulating film between the FG electrode and the CG electrode, relating to a cross section in a channel width direction of the nonvolatile memory cell, dimension in the channel width direction of a top surface of the AA is shorter than dimension in the channel width direction of a bottom surface of the tunnel insulating film, and an area of a portion opposing the AA of the tunnel insulating film is smaller than an area of a portion opposing a top surface of the FG electrode of the interelectrode insulating film.
摘要翻译：一种半导体器件包括：半导体衬底，包括由隔离绝缘膜包围的有源区（AA）和在AA上的非易失性存储单元，非易失性存储单元包括AA上的隧道绝缘膜，隧道绝缘上的FG电极薄膜，FG电极上方的CG电极以及FG电极和CG电极之间的电极间绝缘膜，涉及非易失性存储单元的沟道宽度方向上的横截面，顶表面的沟道宽度方向上的尺寸的距离短于隧道绝缘膜的底面的沟道宽度方向上的尺寸，并且与隧道绝缘膜的AA相对的部分的面积小于与隧道绝缘膜的顶面相对的部分的面积电极间绝缘膜的FG电极。

9. 发明授权

US08637915B2 Nonvolatile semiconductor memory 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US08637915B2
公开(公告)日：2014-01-28
申请号：US13007258
申请日：2011-01-14
申请人： Masayuki Ichige , Fumitaka Arai , Riichiro Shirota , Toshitake Yaegashi , Yoshio Ozawa , Akihito Yamamoto , Ichiro Mizushima , Yoshihiko Saito
发明人： Masayuki Ichige , Fumitaka Arai , Riichiro Shirota , Toshitake Yaegashi , Yoshio Ozawa , Akihito Yamamoto , Ichiro Mizushima , Yoshihiko Saito
IPC分类号： H01L29/788
CPC分类号： H01L29/42336 , H01L21/28273 , H01L27/0207 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42324 , H01L29/7881
摘要： A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells.
摘要翻译：非易失性半导体存储器包括具有浮动栅极和控制栅极的第一和第二存储单元。第一和第二存储单元的浮动栅极包括第一部分和布置在第一部分上的第二部分，并且第二部分在控制栅极的延伸方向上的宽度比第一部分的宽度窄。第一和第二存储单元的第一部分之间的第一空间填充有一种绝缘体。控制栅极被布置在第一和第二存储单元的第二部分之间的第二空间处。

10. 发明授权

US08324679B2 Nonvolatile semiconductor memory 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US08324679B2
公开(公告)日：2012-12-04
申请号：US13430153
申请日：2012-03-26
申请人： Masayuki Ichige , Fumitaka Arai , Riichiro Shirota , Toshitake Yaegashi , Yoshio Ozawa , Akihito Yamamoto , Ichiro Mizushima , Yoshihiko Saito
发明人： Masayuki Ichige , Fumitaka Arai , Riichiro Shirota , Toshitake Yaegashi , Yoshio Ozawa , Akihito Yamamoto , Ichiro Mizushima , Yoshihiko Saito
IPC分类号： H01L29/788
CPC分类号： H01L29/42336 , H01L21/28273 , H01L27/0207 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42324 , H01L29/7881
摘要： A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells.
摘要翻译：非易失性半导体存储器包括具有浮动栅极和控制栅极的第一和第二存储单元。第一和第二存储单元的浮动栅极包括第一部分和布置在第一部分上的第二部分，并且第二部分在控制栅极的延伸方向上的宽度比第一部分的宽度窄。第一和第二存储单元的第一部分之间的第一空间填充有一种绝缘体。控制栅极被布置在第一和第二存储单元的第二部分之间的第二空间处。

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