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1. 发明公开

EP3995609A1 Mg2Si SINGLE CRYSTAL, Mg2Si SINGLE CRYSTAL SUBSTRATE, INFRARED RAY-RECEIVING ELEMENT, AND METHOD FOR MANUFACTURING Mg2Si SINGLE CRYSTAL 审中-实审
公开(公告)号：EP3995609A1
公开(公告)日：2022-05-11
申请号：EP21731378.2
申请日：2021-02-25
申请人： Ibaraki University , JX Nippon Mining & Metals Corporation
发明人： UDONO, Haruhiko
IPC分类号： C30B29/10 , C30B11/08 , H01L31/10
摘要： Provided is a Mg 2 Si single crystal in which generation of low-angle grain boundaries in the crystal is satisfactorily suppressed. A Mg 2 Si single crystal, wherein a variation in crystal orientation as measured by XRD is in a range of ± 0.020°.

2. 发明公开

EP3859791A1 SEMICONDUCTOR MATERIAL, INFRARED LIGHT RECEIVING ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR MATERIAL 审中-公开
公开(公告)号：EP3859791A1
公开(公告)日：2021-08-04
申请号：EP19883358.4
申请日：2019-05-23
申请人： Ibaraki University , JX Nippon Mining & Metals Corporation
发明人： UDONO, Haruhiko , ASAHI, Toshiaki
IPC分类号： H01L31/0264
摘要： Provided is a semiconductor material having improved oxidation resistance. The semiconductor material has a single crystal represented by the following composition formula:

Composition formula: Mg 2 Sn·Zn a

in which, a is a Zn content of from 0.05 to 1 at% relative to Mg 2 Sn.

3. 发明公开

EP3595019A1 PHOTODIODE AND LIGHT-SENSITIVE DEVICE 有权转让
公开(公告)号：EP3595019A1
公开(公告)日：2020-01-15
申请号：EP18911602.3
申请日：2018-09-20
申请人： Ibaraki University , JX Nippon Mining & Metals Corporation
发明人： UDONO, Haruhiko , ASAHI, Toshiaki
IPC分类号： H01L31/103
摘要： Provided is a semiconductor photodiode which has an electrode structure having not only high adhesion to a Mg 2 Si material but also improved overall performance including photosensitivity. A photodiode comprising: a pn junction of a magnesium silicide crystal; an electrode comprising a material that is in contact with p-type magnesium silicide; and an electrode comprising a material that is in contact with n-type magnesium silicide, wherein the material that is in contact with p-type magnesium silicide is a material which has a work function of 4.81 eV or more and reacts with silicon to form a silicide or form an alloy with magnesium.

4. 发明公开

EP2548845A1 PRODUCTION APPARATUS AND METHOD FOR PRODUCING MG2SI1-XSNX POLYCRYSTALS 审中-公开
标题翻译： HERSTELLUNGSVORRICHTUNG UND VERFAHREN ZUR HERSTELLUNG VON Mg2Si（1-x）Sn（x）-POLYKRISTALLEN
公开(公告)号：EP2548845A1
公开(公告)日：2013-01-23
申请号：EP11756479.9
申请日：2011-03-16
申请人： Ibaraki University , Showa KDE Co., Ltd.
发明人： UDONO, Haruhiko , MITO, Youhiko
IPC分类号： C01B33/06 , C22C1/02 , C22C13/00 , C22C23/00 , H01L35/14 , H01L35/20 , H01L35/34
CPC分类号： C22C1/02 , B22F1/0003 , C04B35/58085 , C04B35/806 , C04B2235/40 , C04B2235/401 , C04B2235/5228 , C04B2235/526 , C04B2235/5264 , C04B2235/80 , C22C1/0408 , C22C1/0491 , C22C23/00 , F27D99/00 , H01L35/20 , H01L35/34
摘要： Provided are an apparatus and a method for producing an inexpensive Mg 2 Si 1-x Sn x polycrystal that can be effectively used as thermoelectric conversion materials that can be expected to have a high performance index by doping if necessary.
A problem can be solved by a production apparatus 1 for producing an Mg 2 Si 1-x Sn x polycrystal including at least a reaction vessel for synthesis of Mg 2 Si 1-x Sn x represented by the following formula (1) by filling a mixture of Mg particles and Si particles or Mg particles and Sn particles, or Mg-Si alloy particles or Mg-Sn alloy particles as a main starting material 2 to cause a reaction; an inorganic fiber layer 6 which is fixedly provided above the starting material 2 filled into the reaction vessel 3 and has air permeability, which can be caused to disappear by a product 7 generated by chemical reaction of vaporized Mg with oxygen during the synthesis of the polycrystal 12; heating means 8 for heating the reaction vessel 3; and control means 9 for controlling the heating temperature and heating time of the reaction vessel 3, wherein

Mg 2 Si 1-x Sn x (1)

(in the formula (1), x is 0 to 1).
摘要翻译：提供一种用于生产便宜的Mg 2 Si 1-x Sn x多晶体的装置和方法，其可以有效地用作可以预期如果需要通过掺杂具有高性能指标的热电转换材料。通过用于制造至少包含由下式（1）表示的Mg 2 Si 1-x Sn x的反应容器的Mg 2 Si 1-x Sn x多晶体的制造装置1可以解决问题， Mg颗粒和Si颗粒或Mg颗粒和Sn颗粒的混合物，或Mg-Si合金颗粒或Mg-Sn合金颗粒作为主要原料2引起反应; 无机纤维层6，其固定地设置在填充到反应容器3中的起始材料2的上方，并且具有透气性，其可以在多晶合成期间被蒸发的Mg与氧的化学反应产生的产物7消失 12; 用于加热反应容器3的加热装置8; 以及用于控制反应容器3的加热温度和加热时间的控制装置9，其中，ƒ€ƒ€ƒ€ƒ€ƒ€ƒMg2 Si 1-x Sn x€ƒ€ƒ€ƒ ƒ（1）（在公式（1）中，x为0至1）。

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