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1. 发明公开

EP0939434A1 Method for fabricating ferroelectric thin films using a sol-gel technique 失效
标题翻译： Herstellung eines ferroelektrischen Films durch ein Sol-Gel-Verfahren
公开(公告)号：EP0939434A1
公开(公告)日：1999-09-01
申请号：EP98870038.1
申请日：1998-02-25
申请人： INTERUNIVERSITAIR MICRO-ELEKTRONICA CENTRUM VZW , LIMBURGS UNIVERSITAIR CENTRUM
发明人： Wouters, Dirk , Norga, Gerd , Maes, Herman , Nouwen, Ria , Mullens, Jules , Franco, Dirk , Yperman, Jan , Van Poucke, Lucien C.
IPC分类号： H01L21/316 , H01L21/3205 , C23C18/12
CPC分类号： H01L21/31691 , C23C18/1216 , C23C18/1225 , C23C18/1254 , H01L21/02197 , H01L28/55
摘要： A method is disclosed for the formation of ferro-electric films using a multi coating process based on a sol-gel technique. In particular a method is disclosed to fabricate high-quality thickness scaled PZT films of an alkoxide-type liquid chemical PZT precursor solution, preferably a Pb(Zr x Ti 1-x )O 3 precursor solution, using a sol-gel technique. At least two coated layers are deposited, but the precise number of coated layers depends on the desired thickness of the ferro-electric film. According to the method of the invention, the electrical characteristics of the film as formed are not dependent on the number of coated layers. There are a number of properties, characteristic for the method of the present invention, and resulting in said excellent electrical characteristics. In fact said method can comprise a multi coating process wherein a reduced number of coated layers is used but where intermediate crystallization steps are performed. The ferro-electric films formed using this method have excellent electrical characteristics, provided that a crystallization step is only performed if the thickness of the film formed since the last crystallization step is minimum about 40 to 50 nm. Alternatively, the method can comprise a multi coating process wherein no intermediate crystallization steps are used.
摘要翻译：公开了一种使用基于溶胶 - 凝胶技术的多涂层方法形成铁电膜的方法。具体地，公开了使用溶胶 - 凝胶技术制造醇盐型液体化学PZT前体溶液，优选Pb（Zr x Ti 1-x）O 3前体溶液的高质量厚度比例的PZT膜的方法。沉积至少两层涂层，但涂层的精确数量取决于铁电薄膜的所需厚度。根据本发明的方法，形成的膜的电特性不依赖于涂层的数量。本发明的方法具有许多特性，并具有优异的电特性。事实上，所述方法可以包括多层涂覆方法，其中使用减少数量的涂层，但是进行中间结晶步骤。使用该方法形成的铁电膜具有优异的电特性，条件是仅当从最后一个结晶步骤形成的膜的厚度最小为约40至50nm时才进行结晶步骤。或者，该方法可以包括其中不使用中间结晶步骤的多涂层方法。

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