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1. 发明申请

WO2005069372A1 CARBON NANOTUBE CONDUCTOR FOR TRENCH CAPACITORS 审中-公开
标题翻译：用于TRENCH电容器的碳纳米管导体
公开(公告)号：WO2005069372A1
公开(公告)日：2005-07-28
申请号：PCT/US2003/040295
申请日：2003-12-18
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , FURUKAWA, Toshiharu , HAKEY, Mark, C. , HOLMES, Steven, J. , HORAK, David, V. , KOBURGER, Charles, W., III , NESBIT, Larry, A.
发明人： FURUKAWA, Toshiharu , HAKEY, Mark, C. , HOLMES, Steven, J. , HORAK, David, V. , KOBURGER, Charles, W., III , NESBIT, Larry, A.
IPC分类号： H01L27/108
CPC分类号： H01L27/10864 , B82Y10/00 , H01L27/10861 , Y10S977/936 , Y10S977/943 , Y10S977/948
摘要： A trench-type storage device includes a trench in a substrate (100), with bundles of carbon nanotubes (202) lining the trench and a trench conductor (300) filling the trench. A trench dielectric (200) may be formed between the carbon nanotubes and the sidewall of the trench. The bundles of carbon nanotubes form an open cylinder structure lining the trench. The device is formed by providing a carbon nanotube catalyst structure on the substrate and patterning the trench in the substrate; the carbon nanotubes are then grown down into the trench to line the trench with the carbon nanotube bundles, after which the trench is filled with the trench conductor.
摘要翻译：沟槽型存储装置包括在衬底（100）中的沟槽，具有衬在沟槽上的碳纳米管（202）的束和填充沟槽的沟槽导体（300）。可以在碳纳米管和沟槽的侧壁之间形成沟槽电介质（200）。碳纳米管束形成在沟槽内衬的开放圆筒结构。该器件通过在衬底上提供碳纳米管催化剂结构并图案化衬底中的沟槽而形成; 然后将碳纳米管向下生长到沟槽中以与碳纳米管束对准沟槽，然后用沟槽导体填充沟槽。

2. 发明申请

WO2008039166A3 NON-VOLATILE SWITCHING AND MEMORY DEVICES USING VERTICAL NANOTUBES 审中-公开
公开(公告)号：WO2008039166A3
公开(公告)日：2008-04-03
申请号：PCT/US2006/028464
申请日：2006-07-21
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , FURUKAWA, Toshiharu , HAKEY, Mark, C. , HOLMES, Steven, J. , HORAK, David, V. , KOBURGER, Charles, W., III.
发明人： FURUKAWA, Toshiharu , HAKEY, Mark, C. , HOLMES, Steven, J. , HORAK, David, V. , KOBURGER, Charles, W., III.
IPC分类号： G11C11/00
摘要： Non-volatile and radiation-hard switching and memory devices (225) using vertical nano-tubes (155) and reversibly held in state by van der Waals' forces and methods of fabricating the devices. Means for sensing the state of the devices include measuring capacitance, and tunneling and field emission currents.

3. 发明申请

WO2006076377A3 WIRING PATTERNS FORMED BY SELECTIVE METAL PLATING 审中-公开
公开(公告)号：WO2006076377A3
公开(公告)日：2006-07-20
申请号：PCT/US2006/000844
申请日：2006-01-10
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , FURUKAWA, Toshiharu , HAKEY, Mark, C. , HOLMES, Steven, J. , HORAK, David, V. , KOBURGER, Charles, W., III
发明人： FURUKAWA, Toshiharu , HAKEY, Mark, C. , HOLMES, Steven, J. , HORAK, David, V. , KOBURGER, Charles, W., III
IPC分类号： H01L23/48
摘要： Conductive sidewall spacer stractures are formed using a method tiiat patterns structures (mandrels) and activates the sidewalls of the structures. Metal ions are attached to the sidewalls of the structures and these metal ions are reduced to form seed material. The structures are then trimmed and the seed material is plated to form wiring on the sidewalls of the structures.

4. 发明申请

WO2006041793A1 LOW-K DIELECTRIC MATERIAL BASED UPON CARBON NANOTUBRES AND METHODS OF FORMING SUCH LOW-K DIELECTRIC MATERIALS 审中-公开
标题翻译：基于碳纳米管的低K电介质材料和形成这种低K电介质材料的方法
公开(公告)号：WO2006041793A1
公开(公告)日：2006-04-20
申请号：PCT/US2005/035547
申请日：2005-10-03
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , FURUKAWA, Toshiharu , HAKEY, Mark, C. , HOLMES, Steven, J. , HORAK, David, V. , KOBURGER, Charles, W., III
发明人： FURUKAWA, Toshiharu , HAKEY, Mark, C. , HOLMES, Steven, J. , HORAK, David, V. , KOBURGER, Charles, W., III
IPC分类号： H01L21/469
CPC分类号： H01L21/02115 , B82Y10/00 , H01L21/02282 , H01L21/3146 , H01L21/3185 , H01L21/76814 , H01L21/7682 , H01L21/76826 , H01L21/76831 , H01L21/76888 , H01L2221/1047
摘要： A low-k dielectric material for use in the manufacture of semiconductor devices, semiconductor structures using the low-k dielectric material, and methods of forming such dielectric materials and fabricating such structures. The low-k dielectric material (14) comprises carbon nanostructures (16), like carbon nanotubes or carbon buckyballs, that are characterized by an insulating electronic state. The carbon nanostructures may be converted to the insulating electronic state either before or after a layer containing the carbon nanostructures is formed on a substrate (10). One approach for converting the carbon nanostructures to the insulating electronic state is fluorination.
摘要翻译：用于制造半导体器件的低k电介质材料，使用低k电介质材料的半导体结构，以及形成这种电介质材料和制造这种结构的方法。低k电介质材料（14）包括碳纳米结构（16），如碳纳米管或碳棒球，其特征在于绝缘电子状态。碳纳米结构可以在包含碳纳米结构的层在衬底（10）上形成之前或之后转变为绝缘电子状态。将碳纳米结构转换成绝缘电子状态的一种方法是氟化。

5. 发明申请

WO2007106855A3 MICRO-ELECTRO-MECHANICAL VALVES AND PUMPS AND METHODS OF FABRICATING SAME 审中-公开
公开(公告)号：WO2007106855A3
公开(公告)日：2007-09-20
申请号：PCT/US2007/063977
申请日：2007-03-14
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , FURUKAWA, Toshiharu , HAKEY, Mark, C. , HOLMES, Steven, J. , HORAK, David, V. , KOBURGER, Charles, W.
发明人： FURUKAWA, Toshiharu , HAKEY, Mark, C. , HOLMES, Steven, J. , HORAK, David, V. , KOBURGER, Charles, W.
IPC分类号： F16K31/02
摘要： Micro-valves (257) and micro-pumps (400) and methods of fabricating micro- valves (257) and micro-pumps (400). The micro-valves (257) and micro-pumps (400) include electrically conductive diaphragms (155) fabricated from electrically conductive nano-fibers. Fluid flow through the micro-valves (257) and pumping action of the micro-pumps (400) is accomplished by applying electrostatic forces to the electrically conductive diaphragms (155).

6. 发明申请

WO2013023124A2 DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS FOR NEGATIVE RESISTS 审中-公开
标题翻译：可发展的底部防反射涂层组合物
公开(公告)号：WO2013023124A2
公开(公告)日：2013-02-14
申请号：PCT/US2012/050267
申请日：2012-08-10
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , CHEN, Kuang-jung , HOLMES, Steven, J. , HUANG, Wu-song , LIU, Sen
发明人： CHEN, Kuang-jung , HOLMES, Steven, J. , HUANG, Wu-song , LIU, Sen
IPC分类号： G03F7/004 , G03F7/039 , G03F7/09 , C09D133/04
CPC分类号： G03F7/0382 , C09J133/14 , G03F7/091 , G03F7/094 , G03F7/095
摘要： A negative developable bottom antireflective coating (NDBARC) material includes a polymer containing an aliphatic alcohol moiety, an aromatic moiety, and a carboxylic acid moiety. The NDBARC composition is insoluble in a typical resist solvent such as propylene glycol methyl ether acetate (PGMEA) after coating and baking. The NDBARC material also includes a photoacid generator, and optionally a crosslinking compound. In the NDBARC material, the carboxylic acid provides the developer solubility, while the alcohol alone, the carboxylic acid alone, or their combination provides the PGMEA resistance. The NDBARC material has resistance to the resist solvent, and thus, intermixing does not occur between NDBARC and resist during resist coating over NDBARC. After exposure and bake, the lithographically exposed portions of both the negative photoresist (30E) and the NDBARC layer (20E) become insoluble in developer due to the chemically amplified crosslinking of the polymers in negative resist and NDBARC layer in the lithographically exposed portions.
摘要翻译：负显影底部抗反射涂层（NDBARC）材料包括含有脂族醇部分，芳族部分和羧酸部分的聚合物。在涂布和烘烤后，NDBARC组合物不溶于典型的抗蚀剂溶剂如丙二醇甲基醚乙酸酯（PGMEA）中。 NDBARC材料还包括光酸产生剂和任选的交联化合物。在NDBARC材料中，羧酸提供显影剂溶解性，而单独的醇，单独的羧酸或其组合提供PGMEA抗性。 NDBARC材料对抗蚀剂溶剂具有抗性，因此在NDBARC上抗蚀剂涂覆期间NDBARC和抗蚀剂之间不会发生混合。在曝光和烘烤之后，由于光刻曝光部分中的负抗蚀剂和NDBARC层中的聚合物的化学放大交联，负光刻胶（30E）和NDBARC层（20E）的光刻曝光部分变得不溶于显影剂。 / p>

7. 发明申请

WO2014078789A1 METHODS FOR FORMING NANOPARTICLES USING SEMICONDUCTOR MANUFACTURING INFRASTRUCTURE 审中-公开
标题翻译：使用半导体制造基础设施形成纳米颗粒的方法
公开(公告)号：WO2014078789A1
公开(公告)日：2014-05-22
申请号：PCT/US2013/070562
申请日：2013-11-18
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： CHENG, Joy , COADY, Daniel, J. , COLBURN, Matthew, E. , DAVIS, Blake, W. , HEDRICK, James, L. , HOLMES, Steven, J. , MAUNE, Hareem, T. , NELSON, Alshakim
IPC分类号： B82B3/00 , G03F7/00 , B82B1/00
CPC分类号： B29B9/16 , B81C1/00214 , B82Y40/00
摘要： A method of preparing particles comprises forming by optical lithography a topographic template layer disposed on a surface of a substrate, which is suitable for spin casting. The template layer comprises a non-crosslinked template polymer having a pattern of independent wells therein for molding independent particles. Spin casting a particle- forming composition onto the template layer forms a composite layer comprising the template polymer and the particles disposed in the wells. The composite layer is removed from the substrate using a stripping agent that dissolves the template polymer without dissolving the particles. The particles are then isolated.
摘要翻译：制备颗粒的方法包括通过光刻法形成设置在基材表面上的适于旋转浇铸的地形模板层。模板层包含非交联模板聚合物，其中具有用于模制独立颗粒的独立孔的图案。将颗粒形成组合物旋转到模板层上形成包含模板聚合物和设置在孔中的颗粒的复合层。使用溶解模板聚合物而不溶解颗粒的剥离剂从基材上除去复合层。然后分离颗粒。

8. 发明申请

WO2014149378A1 REPLACEMENT GATE ELECTRODE WITH A SELF-ALIGNED DIELECTRIC SPACER 审中-公开
标题翻译：具有自对准电介质间隔器的更换门电极
公开(公告)号：WO2014149378A1
公开(公告)日：2014-09-25
申请号：PCT/US2014/017897
申请日：2014-02-24
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： PONOTH, Shom , BERGENDAHL, Marc, A. , HOLMES, Steven, J. , HORAK, David, V. , KOBURGER, Charles, W. , YANG, Chih-Chao
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/0847 , H01L21/0257 , H01L21/02636 , H01L21/28008 , H01L21/28114 , H01L29/66545 , H01L29/66553 , H01L29/66795 , H01L29/785
摘要： A dielectric disposable gate structure can be formed across a semiconductor material portion, and active semiconductor regions are formed within the semiconductor material portion. Raised active semiconductor regions are grown over the active semiconductor regions while the dielectric disposable gate structure limits the extent of the raised active semiconductor regions. A planarization dielectric layer is formed over the raised active semiconductor regions. In one embodiment, the dielectric disposable gate structure is removed, and a dielectric gate spacer can be formed by conversion of surface portions of the raised active semiconductor regions around a gate cavity. Alternately, an etch mask layer overlying peripheral portions of the disposable gate structure can be formed, and a gate cavity and a dielectric spacer can be formed by anisotropically etching an unmasked portion of the dielectric disposable gate structure. A replacement gate structure can be formed in the gate cavity.
摘要翻译：可以在半导体材料部分上形成电介质一次性栅极结构，并且在半导体材料部分内形成有源半导体区域。凸起的有源半导体区域在有源半导体区域上生长，而电介质一次性栅极结构限制了凸起的有源半导体区域的程度。在凸起的有源半导体区域上形成平坦化介电层。在一个实施例中，去除了电介质一次性栅极结构，并且可以通过将凸起的有源半导体区域的表面部分转换成围绕栅极腔而形成介电栅极间隔物。或者，可以形成覆盖一次性栅极结构的周边部分的蚀刻掩模层，并且可以通过各向异性蚀刻电介质一次性栅极结构的未屏蔽部分来形成栅极腔和介电隔离物。可以在栅极腔中形成替代栅极结构。

9. 发明申请

WO2013126135A1 DUAL HARD MASK LITHOGRAPHY PROCESS 审中-公开
标题翻译：双硬掩模平版印刷工艺
公开(公告)号：WO2013126135A1
公开(公告)日：2013-08-29
申请号：PCT/US2012/070784
申请日：2012-12-20
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： ARNOLD, John, C. , BURNS, Sean, D. , HOLMES, Steven, J. , HORAK, David, V. , SANKARAPANDIAN, Muthumanickam , YIN, Yunpeng
IPC分类号： G03F1/68 , G03F1/80 , G03F7/20
CPC分类号： H01L23/5226 , G03F7/0035 , G03F7/091 , G03F7/094 , H01L21/0332 , H01L21/0338 , H01L21/3081 , H01L21/3088 , H01L21/31144 , H01L21/76811 , H01L21/76816 , H01L2924/0002 , Y10T428/24355 , H01L2924/00
摘要： A first metallic hard mask layer over an interconnect-level dielectric layer is patterned with a line pattern. At least one dielectric material layer, a second metallic hard mask layer, a first organic planarization layer (OPL), and a first photoresist are applied above the first metallic hard mask layer. A first via pattern is transferred from the first photoresist layer into the second metallic hard mask layer. A second OPL and a second photoresist are applied and patterned with a second via pattern, which is transferred into the second metallic hard mask layer. A first composite pattern of the first and second via patterns is transferred into the at least one dielectric material layer. A second composite pattern that limits the first composite pattern with the areas of the openings in the first metallic hard mask layer is transferred into the interconnect-level dielectric layer.
摘要翻译：在互连级介质层上的第一金属硬掩模层用线图案图案化。在第一金属硬掩模层上方施加至少一个介电材料层，第二金属硬掩模层，第一有机平坦化层（OPL）和第一光致抗蚀剂。第一通孔图案从第一光致抗蚀剂层转移到第二金属硬掩模层中。第二OPL和第二光致抗蚀剂被施加和图案化，第二通孔图案被转移到第二金属硬掩模层中。第一和第二通孔图案的第一复合图案被转移到至少一个介电材料层中。将第一复合图案与第一金属硬掩模层中的开口的面积限制的第二复合图案被转移到互连级介质层中。

10. 发明申请

WO2013070511A1 HYBRID PHOTORESIST COMPOSITION AND PATTERN FORMING METHOD USING THEREOF 审中-公开
标题翻译：混合光电组合物和使用其的图案形成方法
公开(公告)号：WO2013070511A1
公开(公告)日：2013-05-16
申请号：PCT/US2012/063234
申请日：2012-11-02
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： CHEN, Kuang-jung , HUANG, Wu-song , LIU, Sen , HOLMES, Steven, J. , BREYTA, Gregory
IPC分类号： G03F7/004 , G03F7/028 , G03F7/26 , G03F7/11 , H01L21/027
CPC分类号： G03F7/203 , G03F7/0045 , G03F7/028 , G03F7/0382 , G03F7/0392 , G03F7/095 , Y10S430/114 , Y10S430/128
摘要： The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions.
摘要翻译：本发明涉及一种用于改进分辨率的混合光致抗蚀剂组合物和使用光致抗蚀剂组合物的图案形成方法。光致抗蚀剂组合物包括辐射敏感酸产生剂，交联剂和具有疏水性单体单元的聚合物和含有羟基的亲水性单体单元。至少一些羟基被具有低活化能的酸不稳定部分保护。光致抗蚀剂能够产生对单次曝光的混合响应。图案形成方法利用混合响应在光致抗蚀剂层中形成图案化结构。本发明的光致抗蚀剂组合物和图案形成方法可用于打印具有精确图像控制的特征，特别是小尺寸的空间。

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