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1. 发明申请

WO2013085696A1 FORMING PATTERNED GRAPHENE LAYERS 审中-公开
标题翻译：形成图形石墨层
公开(公告)号：WO2013085696A1
公开(公告)日：2013-06-13
申请号：PCT/US2012/065490
申请日：2012-11-16
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , EGYPT NANOTECHNOLOGY CENTER (EGNC) , AFZALI-ARDAKANI, Ali , MAAROUF, Ahmed , MARTYNA, Glenn, J. , SAENGER, Katherine
发明人： AFZALI-ARDAKANI, Ali , MAAROUF, Ahmed , MARTYNA, Glenn, J. , SAENGER, Katherine
IPC分类号： B44C1/165
CPC分类号： H01B1/04 , B32B3/00 , B32B3/12 , B32B9/007 , B32B9/041 , B32B15/20 , B32B2307/202 , B32B2307/206 , B32B2457/00 , B82Y30/00 , B82Y40/00 , C01B32/184 , C23F1/02 , H01L21/02527 , H01L21/042 , H01L21/324 , Y10T428/24545 , Y10T428/24851 , Y10T428/24909 , Y10T428/24917
摘要： An apparatus and method for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure of a carbide-forming metal or metal-containing alloy on a substrate, applying a layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy on the substrate, heating the layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy in an environment to remove graphene regions proximate to the at least one patterned structure of a carbide-forming metal or metal-containing alloy, and removing the at least one patterned structure of a carbide-forming metal or metal-containing alloy to produce a patterned graphene layer on the substrate, wherein the patterned graphene layer on the substrate provides carrier mobility for electronic devices.
摘要翻译：一种用于在衬底上形成图案化的石墨烯层的装置和方法。一种这样的方法包括在基底上形成碳化物形成金属或含金属合金的至少一个图案化结构，在碳化物形成金属或含金属合金的至少一个图案化结构的顶部上施加石墨烯层在基板上，在环境中在形成碳化物的金属或含金属的合金的至少一个图案化结构的顶部上加热石墨烯层，以去除邻近碳化物形成金属的至少一个图案化结构的石墨烯区域或含金属的合金，以及去除形成碳化物的金属或含金属的合金的至少一个图案化结构，以在衬底上产生图案化的石墨烯层，其中衬底上的图案化石墨烯层提供电子器件的载流子迁移率。

2. 发明申请

WO2010060673A1 THICK EPITAXIAL SILICON BY GRAIN REORIENTATION ANNEALING AND APPLICATIONS THEREOF 审中-公开
标题翻译：通过颗粒重新形成的厚度大的外延硅及其应用
公开(公告)号：WO2010060673A1
公开(公告)日：2010-06-03
申请号：PCT/EP2009/062918
申请日：2009-10-05
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , SAENGER, Katherine , DE SOUZA, Joel , FOGEL, Keith , SADANA, Devendra , INNS, Daniel
发明人： SAENGER, Katherine , DE SOUZA, Joel , FOGEL, Keith , SADANA, Devendra , INNS, Daniel
IPC分类号： C30B1/02 , C30B29/06 , C23C16/56
CPC分类号： C30B29/06 , C23C16/24 , C23C16/56 , C30B1/02
摘要： The invention provides a high temperature (about 1150 C or greater) annealing process for converting thick poly crystalline Si layers on the order of 1 μm to 40 μm on a single crystal seed layer into thick single crystal Si layers having the orientation of the seed layer, thus allowing production of thick Si films having the quality of single crystal silicon at high rates and low cost of processing. Methods of integrating such high temperature processing into solar cell fabrication are described, with particular attention to process flows in which the seed layer is disposed on a porous silicon release layer. Another aspect pertains to the use of similar high temperature anneals for poly-Si grain growth and grain boundary passivation. A further aspect relates to structures in which these thick single crystal Si films and passivated poly-Si films are incorporated.
摘要翻译：本发明提供了一种高温（约1150℃或更高）的退火工艺，用于将单晶种子层上的厚度为1μm至40μm的厚多晶硅层转化成具有晶种层取向的厚单晶Si层，因此能够以高速率生产具有单晶硅质量的厚Si薄膜，并且处理成本低。描述了将这种高温处理集成到太阳能电池制造中的方法，特别注意种子层设置在多孔硅释放层上的工艺流程。另一方面涉及对于多晶硅晶粒生长和晶界钝化使用类似的高温退火。另一方面涉及其中结合有这些厚单晶Si膜和钝化多晶硅膜的结构。

3. 发明申请

WO2009056471A1 HYBRID ORIENTATION SEMICONDUCTOR STRUCTURE WITH REDUCED BOUNDARY DEFECTS AND METHOD OF FORMING SAME 审中-公开
标题翻译：具有减少边界缺陷的混合方向半导体结构及其形成方法
公开(公告)号：WO2009056471A1
公开(公告)日：2009-05-07
申请号：PCT/EP2008/064172
申请日：2008-10-21
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , YIN, Haizhou , OTT, John , SAENGER, Katherine , SUNG, Chun-Yung
发明人： YIN, Haizhou , OTT, John , SAENGER, Katherine , SUNG, Chun-Yung
IPC分类号： H01L21/20
CPC分类号： H01L21/02694 , H01L21/02532 , H01L21/76264 , Y10S438/973
摘要： The present invention provides an improved amorphization/templated recrystallization (ATR) method for forming hybrid orientation substrates and semiconductor device structures. A direct-silicon-bonded (DSB) silicon layer having a (011) surface crystal orientation is bonded to a base silicon substrate having a (001) surface crystal orientation to form a DSB wafer in which in-plane direction of the (011) DSB layer is aligned with in-plane direction of the (001) base substrate. Selected regions of the DSB layer are amorphized down to the base substrate to form amorphized regions aligned with the mutually orthogonal in-plane directions of the (001) base substrate, followed by recrystallization using the base substrate as a template. This arrangement of DSB layer, base substrate, and amorphized region orientation provides a near- vertical, essentially defect-free boundary between original-orientation and changed-orientation silicon regions, enabling complete boundary region removal with smaller footprint shallow trench isolation than possible with other ATR methods.
摘要翻译：本发明提供用于形成混合取向基板和半导体器件结构的改进的非晶化/模板重结晶（ATR）方法。具有（011）表面晶体取向的直接硅键合（DSB）硅层与具有（001）表面晶体取向的基底硅基板结合，形成DSB晶片，其中，在（011）DSB层与（001）基底的面内<110>方向对准。 DSB层的选定区域被非晶化到底部基板以形成与（001）基底基板的相互正交的平面内100°方向对齐的非晶形区域，然后使用基底基板作为模板进行重结晶。 DSB层，基底和无定形区域取向的这种布置提供了原始取向和改变取向硅区域之间的近似垂直的，基本上无缺陷的边界，使得能够实现完全的边界区域去除，其中较小的占地面积的浅沟槽隔离比其他 ATR方法。

4. 发明申请

WO2014020576A1 METHOD FOR IMPROVING QUALITY OF SPALLED MATERIAL LAYERS 审中-公开
标题翻译：改善材料层质量的方法
公开(公告)号：WO2014020576A1
公开(公告)日：2014-02-06
申请号：PCT/IB2013/056348
申请日：2013-08-02
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY , IBM UNITED KINGDOM LIMITED , IBM JAPAN LIMITED
发明人： BEDELL, Stephen , LAURO, Paul , SADANA, Devendra , FOGEL, Keith , ALHOMOUDI, Ibrahim , SAENGER, Katherine , LI, Ning
IPC分类号： H01L21/02
CPC分类号： H01L21/304 , B26F3/00 , C30B33/00 , C30B33/06 , H01L21/2855 , H01L21/32051 , H01L21/321 , H01L31/1892 , Y02E10/50 , Y10T225/10
摘要： Methods for removing a material layer from a base substrate utilizing spalling in which mode III stress, i.e., the stress that is perpendicular to the fracture front created in the base substrate, during spalling is reduced. The substantial reduction of the mode III stress during spalling results in a spalling process in which the spalled material has less surface roughness at one of its' edges as compared to prior art spalling processes in which the mode III stress is present and competes with spalling.
摘要翻译：利用剥落的材料层从基底基板去除材料层的方法，其中模式III应力，即在剥落期间在基底基板中产生的与断裂面垂直的应力减小。在剥落过程中模式III应力的显着降低导致剥落过程，其中剥离材料在其一个边缘处具有较小的表面粗糙度，其中存在模式III应力并与剥落相竞争的现有技术剥落过程。

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