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    • 2. 发明公开
    • Depositing a conductive metal onto a substrate
    • Abscheidung einesleitfähigenMetalls auf einem Substrat。
    • EP0664664A1
    • 1995-07-26
    • EP94120167.5
    • 1994-12-20
    • INTERNATIONAL BUSINESS MACHINES CORPORATION
    • Jimarez, Lisa JeanineLawrence, William HowellMarkovich, Voya RistaOwen, Robert JohnSambucetti, Carlos J.
    • H05K3/38C23C18/22
    • H05K3/38C23C18/22H05K3/181H05K3/381H05K2203/1105H05K2203/1152
    • A method for depositing a conductive metal onto a dielectric substrate is provided. The method includes obtaining a metal sheet having a roughened surface that has the following parameters:
      R a = 1.25 - 2.0 µm (0.05 - 0.08 mil),
      R max = 5.0 - 13.75 µm (0.20 - 0.55 mil),
      S m = 25 - 75 µm (1.00 - 3.00 mil),
      R p = 5 - 8.75 µm (0.20 - 0.35 mil), and
      surface area = 562.5 - 781.25 µm² (0.90 - 1.20 square mils) wherein Ra is the average roughness and the arithmetic mean of the departures from horizontal mean line profile; R max is the maximum peak-to-valley height;
      S m is the mean spacing between high spots at the mean line; R p is the maximum profile height from the mean line;
      and surface area is the area under the surface profile from each measurement using a Talysurf S-120 profilometer.
      The sheet is laminated to the dielectric substrate surface by pressing the roughened surface of the metal sheet against the surface of the substrate and then removed from the substrate. The substrate surface is seeded to render it active for electroless plating thereon; and then a metal from an electroless plating bath is plated thereon. In another method, the dielectric substrate is seeded to render it active for electroless plating thereon. A metal is then plated thereon from an electroless plating bath. The plated metal is subjected to temperature of at least about 100°C for a time sufficient to increase the adhesion of the metal to the substrate.
    • 提供了一种在电介质基片上沉积导电金属的方法。 该方法包括获得具有以下参数的具有粗糙表面的金属片:Ra =1.25-2.0μm(0.05-0.08密耳),Rmax = 5.0-13.75μm(0.20-0.55密耳),Sm = 25-75 (1.00-300密耳),Rp =5-8.75μm(0.20-0.35密耳),表面积=562.5-781.25μm2(0.90-1.20平方密耳)其中Ra是平均粗糙度, 与水平平均线轮廓偏离的算术平均值; Rmax是最大峰谷高度; Sm是平均线上高点之间的平均间距; Rp是距平均线的最大轮廓高度; 并且表面积是使用Talysurf S-120轮廓仪从每次测量的表面轮廓下的面积。 通过将金属板的粗糙表面压在基板的表面上,然后从基板上去除,将薄片层压到电介质基片表面上。 将基材表面接种以使其活性以在其上进行无电镀; 然后将来自化学镀浴的金属镀在其上。 在另一种方法中,将电介质基底接种以使其在其上进行无电镀。 然后将金属从化学镀浴镀在其上。 使电镀金属经受至少约100℃的温度足以增加金属与基底的粘附性的时间。
    • 10. 发明公开
    • High performance metal cone contact
    • Hochleistungsfähigerkonischer Metallkontakt。
    • EP0480194A2
    • 1992-04-15
    • EP91115460.7
    • 1991-09-12
    • International Business Machines Corporation
    • Datta, MadhavKing, David E.Knight, Alan D.Sambucetti, Carlos J.
    • H05K1/00H05K3/00H01R23/72H01R13/24C23F1/02H05K3/38
    • H05K3/07H01L2924/0002H01R13/03H01R13/22H01R43/16H05K3/064H05K3/383H05K3/4007H05K2201/0367H05K2201/0373H05K2203/0369Y10T29/49222H01L2924/00
    • An electrical interconnection, which includes a method for fabricating the device, is disclosed. The interconnection comprises two contact surfaces, on at least one of which is disposed at least one solid metal conical projection in predetermined dimension and location. Rather than necessarily being permanently cojoined, the contact surfaces are attachable and detachable when desired. The conical projections on one contact surface make ohmic contact, either by wiping with an intermeshing like structure on a second contact surface or by contacting a second contact surface which is a substantially flat contact pad. An interconnection, in this invention, is the combination of at least one contact having individual conical projections and another contact, optionally having individual conical projections. The conical projections are formed in metal by electrochemical machining in neutral salt solution, optionally in a continuous foil. The conical projections are also optionally formed on the head of a contact pin.
    • 公开了一种包括制造该装置的方法的电互连。 互连包括两个接触表面,其中至少一个接触表面设置有至少一个预定尺寸和位置的固体金属锥形突起。 不是必须永久地共同接合,所以当需要时,接触表面是可附接的和可拆卸的。 一个接触表面上的锥形突起通过在第二接触表面上以相互啮合的结构擦拭或者通过接触作为基本上平坦的接触垫的第二接触表面来进行欧姆接触。 在本发明中的互连是至少一个具有单个锥形突起的接触件和另一接触件的组合,可选地具有各自的锥形突出部。 锥形凸起通过在中性盐溶液中的电化学机械加工形成金属,任选地在连续的箔中。 锥形突起也可选地形成在接触销的头部上。