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    • 7. 发明公开
    • FORWARD BODY BIAS TRANSISTOR CIRCUITS
    • TRANSISTOR-SCHALTUNGEN MIT SUBSTRAT-VORWÄRTSVORSPANNUNG
    • EP1012971A4
    • 2000-09-20
    • EP98930284
    • 1998-06-16
    • INTEL CORP
    • DE VIVEK KKESHAVARZI ALINARENDRA SIVA GBORKAR SHEKHAR Y
    • H01L27/092H01L29/10H03K19/0948
    • H01L27/0928H01L29/1087H03K19/0948H03K2217/0018
    • Under one aspect of the invention, a semiconductor circuit (50) includes a first group of field effect (FET) transistors (60 and 62) of a first type (p-type) each having a body and a gate. The circuit includes a second group of field effect (FET) transistors (54 and 56) of a second type (n-type) each having a body and a gate. The circuit includes a first voltage source to selectively provide a forward bias to the bodies of the first group of FET transistors (60 and 62) during a first mode and to provide a non-forward bias to the bodies of the first group of FET transistors (60 and 62) during a second mode, and while in the first mode, the forward bias (68) is applied to the bodies of the first group of FET transistors (60 and 62) independent of voltages (A and B) applied to the gates of the first group of FET transistors (60 and 62). Under another aspect of the invention, a circuit (310) includes p-channel field effect transistors (pFET transistors) having n-type bodies electrically coupled to the ground voltage node to forward body bias the pFET transistors. A circuit includes N-channel field effect transistors (nFET transistors) having p-type bodies electrically coupled to the supply voltage node to forward body bias the nFET transistors.
    • 在本发明的一个方面,一种半导体电路(50)包括具有主体和栅极的第一类型(p型)的第一组场效应晶体管(FET)晶体管(60和62)。 电路包括具有主体和门的第二类型(n型)的第二组场效应(FET)晶体管(54和56)。 电路包括第一电压源,以在第一模式期间选择性地向第一组FET晶体管(60和62)的主体提供正向偏置,并且向第一组FET晶体管的主体提供非正向偏置 (60和62),而在第一模式中,正向偏置(68)被施加到第一组FET晶体管(60和62)的主体,而不管施加到 第一组FET晶体管(60和62)的栅极。 在本发明的另一方面,电路(310)包括具有电耦合到接地电压节点的n型体的p沟道场效应晶体管(pFET晶体管),以使pFET晶体管的偏置正向。 电路包括具有电耦合到电源电压节点的p型体的N沟道场效应晶体管(nFET晶体管),以使nFET晶体管的偏置正向。