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1. 发明申请

WO2005096348A3 FORCE SENSOR COMPRISING ORGANIC FIELD EFFECT TRANSISTORS AND PRESSURE SENSOR, POSITION SENSOR AND FINGERPRINT SENSOR THAT ARE BASED ON SAID FORCE SENSOR 审中-公开
标题翻译： WITH有机场效应晶体管的力传感器，其上压力传感器，位置传感器和指纹传感器基于
公开(公告)号：WO2005096348A3
公开(公告)日：2005-12-08
申请号：PCT/DE2005000559
申请日：2005-03-30
申请人： INFINEON TECHNOLOGIES AG , KLAUK HAGEN , HALIK MARCUS , ZSCHIESCHANG UTE , SCHMID GUENTER , DARLINSKI GRZEGORZ , WASER RAINER , BREDERLOW RALF
发明人： KLAUK HAGEN , HALIK MARCUS , ZSCHIESCHANG UTE , SCHMID GUENTER , DARLINSKI GRZEGORZ , WASER RAINER , BREDERLOW RALF
IPC分类号： G01L9/00 , G06F3/033 , G06K9/00 , H01L51/30 , H01L51/20
CPC分类号： G06K9/00053
摘要： The invention relates to a force sensor based on an organic field effect transistor (10) that is applied to a substrate (1; 11). According to the invention, a mechanical force that acts on the transistor causes a corresponding modification of the source-drain voltage or the source-drain current (ID), whereby said modification can be respectively detected as a measured variable (Vmess, Imess) for the exerted force. The invention also relates to a membrane-based pressure sensor that uses a force sensor of this type, to a one- or two-dimensional position sensor that uses a plurality of force sensors of this type and to a fingerprint sensor that uses a plurality of force sensors of this type.
摘要翻译：本发明涉及一种基于一个力传感器的基板上（1; 11）施加的有机场效应晶体管（10），其特征在于，作用在所述晶体管的机械力相应改变其源 - 漏电压或它的源极 - 漏极这些力中的一个的力电流（ID）给出，其中各测量变量（VMEAS，Imess）是可检测的对所施加的力，一个这样的力传感器中使用基于膜的压力传感器，多个这样的力传感器的使用的一个或二维位置传感器和多个使用指纹传感器这样的力传感器。

2. 发明申请

WO2010136007A3 MEMORY ELEMENT, STACKING, MEMORY MATRIX AND METHOD FOR OPERATION 审中-公开
标题翻译：存储元件中，堆放，存储矩阵及其操作方法
公开(公告)号：WO2010136007A3
公开(公告)日：2011-02-24
申请号：PCT/DE2010000514
申请日：2010-05-08
申请人： FORSCHUNGSZENTRUM JUELICH GMBH , RWTH AACHEN , LINN EIKE , KUEGELER CARSTEN , ROSEZIN ROLAND DANIEL , WASER RAINER
发明人： LINN EIKE , KUEGELER CARSTEN , ROSEZIN ROLAND DANIEL , WASER RAINER
IPC分类号： G11C13/00 , G11C11/56 , G11C13/02 , H03K19/177
CPC分类号： G11C13/0002 , G11C13/00 , G11C13/004 , G11C13/0069 , G11C13/02 , G11C2013/0073 , G11C2213/15 , G11C2213/71 , G11C2213/77 , H03K19/177
摘要： The invention relates to a memory element, to stacking, and to a memory matrix in which said memory element can be used, to a method for operating the memory matrix, and to a method for determining the truth value of a logic operation in an array composed of the memory elements. The memory element has at least one first stable state 0 and a second stable state 1. By applying a first write voltage V0, said memory element can be transferred into the high-impedance state 0 and by applying a second write voltage V1, it can be transferred into the likewise high-impedance state 1. By applying a read voltage VR, the amount of which is smaller than the write voltages V0 and V1, the memory element exhibits different electrical resistance values. In the parasitic current paths occurring in a memory matrix, the memory element acts as a high-impedance resistor, without in principle being limited to unipolar switching. A method has been developed, with which an array composed of the memory elements according to the invention can be turned into a gate for arbitrary logic operations.
摘要翻译：本发明涉及一种存储元件，堆叠和存储器阵列，其中使用这种存储元件，用于操作所述存储器阵列和确定在所述存储器元件的阵列的逻辑运算的真值的方法的方法。该存储元件具有至少一个第一稳定状态0和第二稳定1个状态。通过在该存储元件施加第一写入电压V0可以在高阻抗状态0和通过将第二写入电压被转换成高阻抗状态也1 V1。当一个读出电压VR，其在量值小于写入电压V0和V1的应用，所述存储器元件具有不同的电阻值。存储元件作用于在存储器阵列中存在的寄生电流路径为高值电阻器而不限于单极切换原理之中。我们已经开发出由根据本发明的存储元件的配置可以用于随机逻辑的操作的栅极进行的方法。

3. 发明申请

WO0143179A3 METHOD FOR PRODUCING A CRYSTALLIZED CERAMIC LAYER BY MEANS OF LASER ANNEALING 审中-公开
标题翻译：制造方法的结晶陶瓷层通过激光退火
公开(公告)号：WO0143179A3
公开(公告)日：2002-05-10
申请号：PCT/DE0004313
申请日：2000-12-04
申请人： FORSCHUNGSZENTRUM JUELICH GMBH , WASER RAINER , BALDUS OLIVER , KRASSER WOLFGANG
发明人： WASER RAINER , BALDUS OLIVER , KRASSER WOLFGANG
IPC分类号： H01L21/314 , H01L21/316 , H01L21/3105
CPC分类号： H01L21/31691
摘要： The invention relates to a method for producing a crystallized ceramic layer by means of laser annealing, whereby: a generating device (10), which has at least one pulse laser (22), generates a first laser beam (16) and a second laser beam (18) that is spatially separate therefrom; a shifting device (12) temporally shifts the second laser beam (18) with regard to the first laser beam (16); a combining device (14) combines both spatially separate laser beams (16, 18) to form an output beam (20), whereby the pulse duration of the output beam (20) is controlled by controlling the temporal shifting of the second laser beam (18) with regard to the first laser beam (16), and; the temperature profile in the ceramic layer is adjusted by controlling the pulse duration of the output beam (20). The invention also relates to a laser system which is especially developed for carrying out said method and which comprises: a generating device (10), which has at least one pulse laser (22) and which is provided for generating a first laser beam (16) and a second laser beam (18) that is spatially separate therefrom; a shifting device (12) which is provided for temporally shifting the second laser beam (18) with regard to the first laser beam (16), and comprises; a combining device (14) which is provided for combining both spatially separate laser beams (16, 18) to form an output beam (20).
摘要翻译：本发明涉及一种方法，用于制造通过激光退火结晶陶瓷层，其特征在于，发生装置（10），（22），其生成第一激光束（16），并且该空间上分离的第二激光束（18），至少一个脉冲激光器的一个 ; 一个位移装置（12）移动，相对于第一激光束（16）时所述第二激光束（18）; 一个合并装置（14），所述两个激光束在空间上分离（16，18）成一输出光束（20）引出，其特征在于，通过控制第一激光束相对的第二激光束（18）的时间偏移的输出光束（20）的脉冲持续时间（16）控制的会; 并且通过控制输出光束（20）的脉冲持续时间在陶瓷层的温度分布进行调整。本发明还涉及一种激光系统，特别是用于进行该方法，包括产生装置（10），其设计，其包括至少一个脉冲激光器（22），并且被设计成使得其包括第一激光束（16），并且该空间上分离的激光束的第二生成（18）; 一个位移装置（12），其从所述第一激光束形成为使得它在时间（16）移动所述第二激光束（18）; 和合并装置，该装置形成为使得它结合了两束激光束在空间上分离（16，18）成一输出光束（20）（14）。

4. 发明申请

WO2012155900A3 METHOD FOR PRODUCING A SEMICONDUCTOR CERAMIC MATERIAL, SEMICONDUCTOR CERAMIC MATERIAL AND A SEMICONDUCTOR COMPONENT 审中-公开
标题翻译：一种用于生产半导体陶瓷材料，半导体陶瓷材料和半导体元件
公开(公告)号：WO2012155900A3
公开(公告)日：2013-01-10
申请号：PCT/DE2012100143
申请日：2012-05-16
申请人： FORSCHUNGSZENTRUM JUELICH GMBH , CHEMICAL CONSULTING DORNSEIFFER CCD GBR , PITHAN CHRISTIAN , KATSU HAYOTO , WASER RAINER , DORNSEIFFER JUERGEN
发明人： PITHAN CHRISTIAN , KATSU HAYOTO , WASER RAINER , DORNSEIFFER JUERGEN
IPC分类号： H01C7/02 , C04B35/46
CPC分类号： H01C7/025 , B82Y30/00 , C01G23/006 , C01P2002/54 , C01P2004/04 , C04B35/465 , C04B35/4682 , C04B35/47 , C04B35/49 , C04B35/491 , C04B35/62222 , C04B35/624 , C04B35/62615 , C04B2235/3213 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3232 , C04B2235/3244 , C04B2235/3251 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3294 , C04B2235/401 , C04B2235/441 , C04B2235/5454 , C04B2235/663 , C04B2235/666 , C04B2235/768 , C04B2235/782 , C04B2235/785
摘要： The invention relates to a method for producing a semiconductor ceramic material having a non-linear electrical resistance with a positive temperature coefficient, in which a precursor mass that comprises a donor-doped, ferroelectric material having a Perovskite structure and the general formula AxByO3 is sintered in a reduced atmosphere at temperatures of not more than 1200 °C. According to the invention, the sintered material has an average grain size in the sub-micrometer range. The sintered material is then reoxidized at its grain boundaries at temperatures of not more than 600 °C. The grain size of the precursor mass has an average primary grain size in the sub-micrometer range, preferably an average primary grain size of not more than 50 nm, more preferably of not more than 20 nm and even more preferably of not more than 10 nm. The semiconductor ceramic material produced by said method has also an average grain size in the sub-micrometer range, preferably in such a way that 80% of the grains are smaller than 800 nm, more preferably smaller than 300 nm and even more preferably smaller than 200 nm.
摘要翻译：公开了一种用于与具有正温度系数，其中一个donatordotiertes具有钙钛矿结构并在还原气氛中的含通式AxByO3前体材料的铁电材料在至多1200℃的温度下进行烧结，其特征在于，非线性电阻的制造半导体陶瓷材料的方法烧结材料具有在亚微米范围内的平均晶粒尺寸。的烧结材料，然后在其晶界再氧化在至多600℃的温度下所述前体材料的颗粒尺寸在亚微米范围内的平均一次粒径，为50nm以下的优选平均一次粒径，更优选为20nm以下，更优选至多为10nm。由该方法制得的半导体陶瓷材料还具有在亚微米范围内的平均晶粒尺寸，晶粒小于800纳米，更优选小于300nm，更优选小于200纳米的优选使得80％。

5. 发明申请

WO2007138088A3 PRODUCTION OF COATING SOLUTIONS AND CORRESPONDING PRODUCTS 审中-公开
标题翻译： MAKING涂层解决方案连同生产的产品
公开(公告)号：WO2007138088A3
公开(公告)日：2008-07-03
申请号：PCT/EP2007055277
申请日：2007-05-31
申请人： RWTH AACHEN , PITHAN CHRISTIAN , HAEGEL FRANZ-HUBERT , DORNSEIFFER JUERGEN , SCHNELLER THEODOR , WASER RAINER
发明人： PITHAN CHRISTIAN , HAEGEL FRANZ-HUBERT , DORNSEIFFER JUERGEN , SCHNELLER THEODOR , WASER RAINER
IPC分类号： C04B35/468 , C01G23/00 , C04B35/47 , C04B35/486 , C04B35/49 , C04B35/622
CPC分类号： C04B35/4682 , B82Y30/00 , C01G23/006 , C01P2004/64 , C04B35/47 , C04B35/486 , C04B35/49 , C04B35/62227 , C04B35/6264 , C04B2235/3232 , C04B2235/3244 , C04B2235/401 , C04B2235/441 , C04B2235/5454 , C09C1/36 , C09C1/3669 , C23C18/1216 , C23C18/1266 , C23C18/1275 , C23C24/08 , C23C26/00 , C23C30/00
摘要： The invention relates to coating solutions for producing tight mesoscopic ceramic layers, consisting of concentrated oxidic nanoparticle dispersions which are produced from humidity-sensitive precursor solutions by a hydrolysis reaction, by means of microemulsions containing cationic surfactants and optionally admixtures of organometallic CSD solutions in a proportion smaller than 50 % in relation to the metal oxide. The CSD solution is added in order to reduce the sintering temperatures required, to produce ceramic composite layers with nanoscale heterogeneity or containing dopings, using other metal combinations, and to increase the density.
摘要翻译：的比例作为用于生产由通过从潮湿敏感的前体溶液进行水解反应通过微乳液与阳离子表面活性剂的方法制备浓缩的氧化物纳米颗粒分散体的致密介观陶瓷层，并用的金属 - 有机CSD溶液外加剂任选较少的涂布溶液提供50％，基于所述金属氧化物。该CSD混合溶液的目的是减少所需的烧结温度，以产生具有纳米级异质或掺杂剂以及通过使用其它金属组合，以及密度的增加陶瓷复合层。

6. 发明申请

WO2004020363A3 HIGH-DENSITY CERAMICS AND METHOD FOR THE PRODUCTION THEREOF 审中-公开
标题翻译：高密度陶瓷和方法生产同样
公开(公告)号：WO2004020363A3
公开(公告)日：2004-04-29
申请号：PCT/DE0302748
申请日：2003-08-14
申请人： FORSCHUNGSZENTRUM JUELICH GMBH , PITHAN CHRISTIAN , WASER RAINER , HAEGEL FRANZ-HUBERT
发明人： PITHAN CHRISTIAN , WASER RAINER , HAEGEL FRANZ-HUBERT
IPC分类号： C01B13/32 , C01B13/36 , C01G23/00 , C04B35/468 , C04B35/495 , C04B35/632 , C04B35/645 , C01G33/00
CPC分类号： C04B35/6455 , B82Y30/00 , C01B13/328 , C01B13/363 , C01G23/006 , C01P2002/72 , C01P2004/04 , C01P2004/64 , C01P2006/10 , C04B35/4682 , C04B35/495 , C04B35/6264 , C04B35/632 , C04B35/645 , C04B2235/3201 , C04B2235/3215 , C04B2235/3236 , C04B2235/3251 , C04B2235/3255 , C04B2235/441 , C04B2235/5454 , C04B2235/5481 , C04B2235/549 , C04B2235/77 , C04B2235/781 , C04B2235/784
摘要： Disclosed is a method for producing high-density ceramics, in which oxidic nanoparticles are first produced by hydrolyzing water-sensitive compounds with microemulsifiers. The resulting particles which have the desired stoichiometric composition are processed to high-density ceramics at very low temperatures by means of pressure-assisted methods. Ceramics having a dense grain size distribution are created from the initial powders that are produced via microemulsifiers due to the dense particle size distribution. The growth rate of the grains during the sintering process is regular as a result of the uniformity of the primary particles. Ceramics that are produced according to the inventive method are also provided with smaller leakage currents due to the temperature characteristics of the dielectric material properties, which are controlled by the grain size, because the grains grow only slightly during sintering, keeping the proportion of electrically blocking grain boundaries high.
摘要翻译：在通过与微滴乳状液的水敏感的化合物水解生成高密度陶瓷第一氧化物纳米颗粒的本发明的方法制备的。他作证的期望的化学计量组合物的颗粒的情况下，可以通过压力支持的方法的装置在非常低的温度下，以高密度陶瓷进行处理。由于窄的粒度分布，同时从经由微乳液原料粉末陶瓷具有窄粒度分布的产生而产生。由于一次粒子的均匀性，在烧结过程中晶粒的生长速率是均匀的。它们是根据本发明的方法制备的陶瓷，有一个由除了较小的漏电流，因为Korngrogen小在烧结过程中生长，从而所述电阻挡晶界的比例仍然很高的介电材料特性的晶粒尺寸温度特性的控制。

7. 发明申请

WO0143243A3 LASER SYSTEM WITH CONTROLLABLE PULSE DURATION 审中-公开
标题翻译：应税脉宽激光系统
公开(公告)号：WO0143243A3
公开(公告)日：2001-11-15
申请号：PCT/DE0004314
申请日：2000-12-04
申请人： FORSCHUNGSZENTRUM JUELICH GMBH , WASER RAINER , BALDUS OLIVER , KRASSER WOLFGANG
发明人： WASER RAINER , BALDUS OLIVER , KRASSER WOLFGANG
IPC分类号： B23K26/06 , B23K26/067 , C04B41/00 , C04B41/80 , H01S3/23 , B23K26/03 , H01S3/00
CPC分类号： B23K26/067 , B23K26/0604 , B23K26/0613 , C04B41/0036 , C04B41/009 , C04B41/80 , C04B2111/00844 , C04B41/0072 , C04B41/4578 , C04B35/00
摘要： The invention relates to a laser system, with controllable pulse duration, which comprises a generator device (10), with at least one pulsed laser (22), formed in such a way that said laser creates a first laser beam (16) and a second beam (18), spatially separate from the above first beam; a displacing device (12) formed in such a way that said device temporally shifts the second beam (18) with respect to the first beam (16); and a combining device (14), formed in such a way that said device combines both spatially separate laser beams (16, 18) in one output beam (20). Said laser system is particularly suitable for use in a method for the production of a crystalline ceramic layer by laser-annealing, whereby the temperature profile in the ceramic layer can be adjusted by controlling the pulse duration of the output beam of said laser system.
摘要翻译：本发明涉及一种具有可控的脉冲持续时间，其包括至少一个脉冲激光器（22）的激光系统，具有生成装置（10）和被设计为使得它产生第一激光束（16），并且该空间上分离的第二激光束中的一个（18）; 一个位移装置（12），其从所述第一激光束形成为使得它在时间（16）移动所述第二激光束（18）; 和合并装置，该装置形成为使得它结合了两束激光束在空间上分离（16，18）成一输出光束（20）（14）。此激光系统是特别适合于在用于制造由合适的激光退火，并且在该陶瓷层的温度分布的结晶陶瓷层的方法中使用，通过控制该激光系统的输出束的脉冲持续时间进行调整。

8. 发明专利

DE102004016155B3 未知
公开(公告)号：DE102004016155B3
公开(公告)日：2006-05-24
申请号：DE102004016155
申请日：2004-04-01
申请人： INFINEON TECHNOLOGIES AG
发明人： KLAUK HAGEN , HALIK MARCUS , ZSCHIESCHANG UTE , SCHMID GUENTER , DARLINSKI GRZEGORZ , WASER RAINER , BREDERLOW RALF
IPC分类号： H01L51/05 , G01L1/00 , G01L1/22 , G01L9/00 , G01L9/04 , G06F3/033 , G06K9/00 , H01L29/84 , H01L51/30
摘要： A force sensor based on an organic field effect transistor applied on a substrate is disclosed. In one embodiment, a mechanical force acting on the transistor causes a change in its source-drain voltage or its source-drain current which corresponds to said force and which can in each case be detected as measurement quantity for the acting force, a diaphragm-based pressure sensor that uses a force sensor of this type, a one- or two-dimensional position sensor that uses a multiplicity of force sensors of this type, and a fingerprint sensor that uses a multiplicity of such force sensors.

9. 发明专利

DE10041699A1 未知
公开(公告)号：DE10041699A1
公开(公告)日：2002-03-21
申请号：DE10041699
申请日：2000-08-24
申请人： INFINEON TECHNOLOGIES AG
发明人： BACHHOFER HARALD , HANEDER THOMAS , SPINDLER OSWALD , WASER RAINER
IPC分类号： H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8239 , H01L41/22
摘要： In a method for producing ferroelectric strontium bismuth tantalate having the composition SrxBiyTa2O9 (SBT) or SrxBiy(Ta, Nb)2O9 (SBTN), the element strontium, which is normally present in an amount y=2, is provided in excess in a range from 2.1

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